VS-16TTS08S-M3, VS-16TTS12S-M3 Series Thyristor High Voltage, Surface Mount Phase Control SCR, 16 1 2 3 D 2 PK (TO-263) PRIMRY CHRCTERISTICS 2, 4 node 1 Cathode 3 Gate I T(V) V DRM /V RRM 800 V, 1200 V V TM 1.4 V I GT 60 m T J -40 C to 125 C Package D 2 PK (TO-263) Circuit configuration Single SCR FETURES Meets MSL level 1, per J-STD-020, LF maximum peak of 245 C Designed and qualified according JEDEC -JESD 47 Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 PPLICTIONS Input rectification (soft start) Vishay input diodes, switches and output rectifiers which are available in identical package outlines DESCRIPTION The VS-16TTS..S-M3 high voltage series of silicon controlled rectifiers are specifically designed for medium power switching and phase control applications. The glass passivation technology used has reliable operation up to 125 C junction temperature. OUTPUT CURRENT IN TYPICL PPLICTIONS PPLICTIONS SINGLE-PHSE RIDGE THREE-PHSE RIDGE UNITS NEM FR-4 or G- glass fabric-based epoxy 2.5 3.5 with 4 oz. (140 μm) copper luminum IMS, R thc = 15 C/W 6.3 9.5 luminum IMS with heatsink, R thc = 5 C/W 14.0 18.5 Note T = 55 C, T J = 125 C, footprint 300 mm 2 MJOR RTINGS ND CHRCTERISTICS PRMETER TEST CONDITIONS VLUES UNITS I T(V) Sinusoidal waveform I RMS 16 V RRM /V DRM 800 to 1200 V I TSM 200 V T, T J = 25 C 1.4 V dv/dt 500 V/μs di/dt 150 /μs T J -40 to +125 C VOLTGE RTINGS PRT NUMER V RRM, MXIMUM PEK REVERSE VOLTGE V V DRM, MXIMUM PEK DIRECT VOLTGE V VS-16TTS08S-M3 800 800 VS-16TTS12S-M3 1200 1200 I RRM /I DRM T 125 C m Revision: 04-Jan-18 1 Document Number: 96412 For technical questions within your region: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUJECT TO CHNGE WITHOUT NOTICE. THE PRODUCTS DESCRIED HEREIN ND THIS DOCUMENT RE SUJECT TO SPECIFIC DISCLIMERS, SET FORTH T www.vishay.com/doc?900
VS-16TTS08S-M3, VS-16TTS12S-M3 Series SOLUTE MXIMUM RTINGS PRMETER SYMOL TEST CONDITIONS VLUES TYP. MX. Maximum average on-state current I T(V) T C = 98 C, 180 conduction, half sine wave Maximum RMS on-state current I RMS 16 Maximum peak, one-cycle, non-repetitive surge current I TSM ms sine pulse, rated V RRM applied 170 ms sine pulse, no voltage reapplied 200 Maximum I 2 t for fusing I 2 t ms sine pulse, rated V RRM applied 144 ms sine pulse, no voltage reapplied 200 2 s Maximum I 2 t for fusing I 2 t t = 0.1 ms to ms, no voltage reapplied 2000 2 s Maximum on-state voltage drop V TM, T J = 25 C 1.4 V On-state slope resistance r t 24.0 m T J = 125 C Threshold voltage V T(TO) 1.1 V T J = 25 C V R = rated V RRM /V DRM 0.5 Maximum reverse and direct leakage current I RM /I DM T J = 125 C node supply = 6 V, resistive load, initial I T = 1, m Holding current I H - 150 T J = 25 C Maximum latching current I L node supply = 6 V, resistive load,t J = 25 C 200 Maximum rate of rise of off-state voltage dv/dt T J = T J max. linear to 80 % V DRM = R g - k = open 500 V/μs Maximum rate of rise of turned-on current di/dt 150 /μs UNITS TRIGGERING PRMETER SYMOL TEST CONDITIONS VLUES UNITS Maximum peak gate power P GM 8.0 Maximum average gate power P G(V) 2.0 W Maximum peak positive gate current + I GM 1.5 Maximum peak negative gate voltage - V GM V node supply = 6 V, resistive load, T J = 25 C 60 m node supply = 6 V, resistive load, T J = - C 90 node supply = 6 V, resistive load, T J = 125 C 35 node supply = 6 V, resistive load, T J = 25 C 2.0 node supply = 6 V, resistive load, T J = 125 C 1.0 V node supply = 6 V, resistive load, T J = - C 3.0 Maximum DC gate voltage not to trigger V GD 0.25 T J = 125 C, V DRM = Rated value Maximum DC gate current not to trigger I GD 2.0 m SWITCHING PRMETER SYMOL TEST CONDITIONS VLUES UNITS Typical turn-on time t gt T J = 25 C 0.9 Typical reverse recovery time t rr 4 μs T J = 125 C Typical turn-off time t q 1 Revision: 04-Jan-18 2 Document Number: 96412 For technical questions within your region: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUJECT TO CHNGE WITHOUT NOTICE. THE PRODUCTS DESCRIED HEREIN ND THIS DOCUMENT RE SUJECT TO SPECIFIC DISCLIMERS, SET FORTH T www.vishay.com/doc?900
VS-16TTS08S-M3, VS-16TTS12S-M3 Series THERML - MECHNICL SPECIFICTIONS PRMETER SYMOL TEST CONDITIONS VLUES UNITS Maximum junction and storage temperature range T J, T Stg -40 to +125 C Maximum thermal resistance, junction to case R thjc DC operation 1.3 Typical thermal resistance, junction to ambient R thj PC mount (1) 40 C/W pproximate weight Marking device Case style D 2 PK (TO-263) Note (1) When mounted on 1" square (650 mm 2 ) PC of FR-4 or G- material 4 oz. (140 μm) copper 40 C/W. For recommended footprint and soldering techniques refer to application note #N-994 2 g 0.07 oz. 16TTS08S 16TTS12S Maximum llowable Case Temperature ( C) 125 R 120 thjc (DC) = 1.3 C/W 115 Conduction ngle 1 5 0 30 60 90 95 180 90 0 2 4 6 8 12 Maximum verage On-state Power Loss (W) 18 16 14 12 8 6 4 2 180 90 60 30 RMS Limit Conduction ngle T = 125 C J 0 0 1 2 3 4 5 6 7 8 9 11 verage On-state Current () verage On-state Current () Fig. 1 - Current Rating Characteristics Fig. 3 - On-State Power Loss Characteristics Maximum llowable Case Temperature ( C) 125 120 115 1 5 R thjc (DC) = 1.3 C/W Conduction Period 0 30 60 90 95 180 DC 90 0 2 4 6 8 12 14 16 Maximum verage On-state Power Loss (W) 25 20 15 RMS Limit 5 DC 180 90 60 30 Conduction Period T = 125 C J 0 0 2 4 6 8 12 14 16 18 verage On-state Current () verage On-state Current () Fig. 2 - Current Rating Characteristics Fig. 4 - On-State Power Loss Characteristics Revision: 04-Jan-18 3 Document Number: 96412 For technical questions within your region: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUJECT TO CHNGE WITHOUT NOTICE. THE PRODUCTS DESCRIED HEREIN ND THIS DOCUMENT RE SUJECT TO SPECIFIC DISCLIMERS, SET FORTH T www.vishay.com/doc?900
VS-16TTS08S-M3, VS-16TTS12S-M3 Series Peak Half Sine Wave On-state Current () 180 160 140 120 0 t ny Rated Load Condition nd With Rated V RRM pplied Following Surge. Initial T J= 125 C @ 60 Hz 0.0083 s @ 50 Hz 0.00 s 16TTS..Series 80 1 0 Number Of Equal mplitude Half Cycle Current Pulses (N) Fig. 5 - Maximum Non-Repetitive Surge Current Peak Half Sine Wave Forward Current () 200 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. 180 Initial T J = 125 C No Voltage Reapplied Rated V 160 RRM Reapplied 140 120 0 80 0.01 0.1 1 Pulse Train Duration (s) Fig. 6 - Maximum Non-Repetitive Surge Current Instantaneous On-state Current () 00 0 T = 25 C J T = 125 C J 1 0 1 2 3 4 5 Instantaneous On-state Voltage (V) Fig. 7 - On-State Voltage Drop Characteristics Transient Thermal Impedance Z thjc ( C/W) 1 0.1 D = 0.50 D = 0.33 D = 0.25 D = 0.17 D = 0.08 Single Pulse Steady State Value (DC Operation) 0.01 0.0001 0.001 0.01 0.1 1 Square Wave Pulse Duration (s) Fig. 8 - Thermal Impedance Z thjc Characteristics Revision: 04-Jan-18 4 Document Number: 96412 For technical questions within your region: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUJECT TO CHNGE WITHOUT NOTICE. THE PRODUCTS DESCRIED HEREIN ND THIS DOCUMENT RE SUJECT TO SPECIFIC DISCLIMERS, SET FORTH T www.vishay.com/doc?900
VS-16TTS08S-M3, VS-16TTS12S-M3 Series Instantaneous Gate Voltage (V) 0 ORDERING INFORMTION TLE 1 Rectangular gate pulse a)recommended load line for rated di/dt: V, 20 ohms tr = 0.5 µs, tp >= 6 µs b)recommended load line for <= 30% rated di/dt: V, 65 ohms tr = 1 µs, tp >= 6 µs VGD TJ = 125 C TJ = 25 C (b) TJ = - C (a) IGD Frequency Limited by PG(V) 0.1 0.001 0.01 0.1 1 0 Instantaneous Gate Current () Fig. 9 - Gate Characteristics (1) PGM = 40, tp = 1 ms (2) PGM = 20 W, tp = 2 ms (3) PGM = 8 W, tp = 5 ms (4) PGM = 4 W, tp = ms (4) (3) (2) (1) Device code VS- 16 T T S 12 S TRL -M3 1 2 3 4 5 6 7 8 9 1 - product 2 - Current rating 3 - Circuit configuration: T = single thyristor 4 - Package: 5 - T = D 2 PK (TO-263) Type of silicon: 6 - S = standard recovery rectifier 08 = 800 V Voltage rating: voltage code x 0 = V RRM 12 = 1200 V 7 - S = surface mountable 8 - None = tube TRL = tape and reel (left oriented) TRR = tape and reel (right oriented) 9 - -M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free ORDERING INFORMTION (Example) PREFERRED P/N QUNTITY PER T/R MINIMUM ORDER QUNTITY PCKGING DESCRIPTION VS-16TTS08S-M3 50 00 ntistatic plastic tubes VS-16TTS08STRR-M3 800 800 13" diameter reel VS-16TTS08STRL-M3 800 800 13" diameter reel VS-16TTS12S-M3 50 00 ntistatic plastic tubes VS-16TTS12STRR-M3 800 800 13" diameter reel VS-16TTS12STRL-M3 800 800 13" diameter reel Dimensions Part marking information Packaging information LINKS TO RELTED DOCUMENTS www.vishay.com/doc?96164 www.vishay.com/doc?95444 www.vishay.com/doc?96424 Revision: 04-Jan-18 5 Document Number: 96412 For technical questions within your region: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUJECT TO CHNGE WITHOUT NOTICE. THE PRODUCTS DESCRIED HEREIN ND THIS DOCUMENT RE SUJECT TO SPECIFIC DISCLIMERS, SET FORTH T www.vishay.com/doc?900
Part Marking Information D 2 PK xxxxxx (1) Part number Example: This is a xxxxxx (1) with assembly lot code C, assembled on WW 02, 20 ssembly lot code V ZYWWX C Product version (optional): Z (replaced according below table) Date code: Year 0 = 20 Week 02 Line X Note (1) If part number contain H as last digit, product is EC-Q1 qualified ENVIRONMENTL NMING CODE (Z) E F M N G PRODUCT DEFINITION Termination lead (Pb)-free Totally lead (Pb)-free RoHS-compliant and termination lead (Pb)-free RoHS-compliant and totally lead (Pb)-free Halogen-free, RoHS-compliant, and termination lead (Pb)-free Halogen-free, RoHS-compliant, and totally lead (Pb)-free Green Revision: 21-Jun-17 1 Document Number: 95444 For technical questions within your region: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUJECT TO CHNGE WITHOUT NOTICE. THE PRODUCTS DESCRIED HEREIN ND THIS DOCUMENT RE SUJECT TO SPECIFIC DISCLIMERS, SET FORTH T www.vishay.com/doc?900
DIMENSIONS in millimeters and inches D 2 PK Outline Dimensions Conforms to JEDEC outline D 2 PK (SMD-220) (3) L1 D L2 2 x e (2)(3) E 1 2 3 4 Lead tip H (2) 2 x b2 2 x b C Detail 0.0 M M 0 to 8 Gauge plane L3 c c2 ± 0.004 M L L4 Detail Rotated 90 CW Scale: 8:1 (E) E1 View - H 1 (3) Seating plane (D1) (3) 17.90 (0.70) 15.00 (0.625) 2.32 MIN. (0.08) Plating 2.64 (0.3) 2.41 (0.096) (c) Pad layout 11.00 MIN. (0.43) (4) b1, b3 (b, b2) Section - and C - C Scale: None 9.65 MIN. (0.38) 3.81 MIN. (0.15) ase Metal c1 (4) SYMOL MILLIMETERS INCHES MILLIMETERS INCHES NOTES SYMOL MIN. MX. MIN. MX. MIN. MX. MIN. MX. NOTES 4.06 4.83 0.160 0.190 D1 6.86 8.00 0.270 0.315 3 1 0.00 0.254 0.000 0.0 E 9.65.67 0.380 0.420 2, 3 b 0.51 0.99 0.020 0.039 E1 7.90 8.80 0.311 0.346 3 b1 0.51 0.89 0.020 0.035 4 e 2.54 SC 0.0 SC b2 1.14 1.78 0.045 0.070 H 14.61 15.88 0.575 0.625 b3 1.14 1.73 0.045 0.068 4 L 1.78 2.79 0.070 0.1 c 0.38 0.74 0.015 0.029 L1-1.65-0.066 3 c1 0.38 0.58 0.015 0.023 4 L2 1.27 1.78 0.050 0.070 c2 1.14 1.65 0.045 0.065 L3 0.25 SC 0.0 SC D 8.51 9.65 0.335 0.380 2 L4 4.78 5.28 0.188 0.208 Notes (1) Dimensioning and tolerancing per SME Y14.5 M-1994 (2) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outmost extremes of the plastic body (3) Thermal pad contour optional within dimension E, L1, D1 and E1 (4) Dimension b1 and c1 apply to base metal only (5) Datum and to be determined at datum plane H (6) Controlling dimension: inches (7) Outline conforms to JEDEC outline TO-263 Revision: 13-Jul-17 1 Document Number: 96164 For technical questions within your region: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUJECT TO CHNGE WITHOUT NOTICE. THE PRODUCTS DESCRIED HEREIN ND THIS DOCUMENT RE SUJECT TO SPECIFIC DISCLIMERS, SET FORTH T www.vishay.com/doc?900
Packaging Information D 2 PK (TO-263) CRRIER TPE FOR TPE ND REEL LEFT in millimeters 16 ± 0.1.35 ± 0.1 Ø 1.55 ± 0.05 4 ± 0.1 2 ± 0.1 1.75 ± 0.1 11.5 ± 0.1 5.25 ± 0.2 0.40 ± 0.1 24 ± 0.3 1.3 ± 0.1 16.13 ± 0.1 Section - Ø 1.5 +0.25-0.1 Ø 4.9 +0.2-0.05 Cover tape (1) 5 ± 0.2 Ø.8 +0.2-0.1 Section - 1.5 ± 0.2 Note (1) For dimensions, see next pages CRRIER TPE FOR TPE ND REEL RIGHT in millimeters 16 ± 0.1 Ø 1.55 ± 0.05 4 ± 0.1 2 ± 0.1 1.75 ± 0.1 Ø 4.9 +0.2-0.05 0.40 ± 0.1.35 ± 0.1 11.5 ± 0.1 24 ± 0.3 1.3 ± 0.1 16.13 ± 0.1 Section - Ø 1.5 +0.25 Cover tape (1) -0.1 5.25 ± 0.2 5 ± 0.2 Ø.8 +0.2-0.1 1.5 ± 0.2 Section - Note (1) For dimensions, see next pages Revision: 13-Oct-17 1 Document Number: 96424 For technical questions within your region: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUJECT TO CHNGE WITHOUT NOTICE. THE PRODUCTS DESCRIED HEREIN ND THIS DOCUMENT RE SUJECT TO SPECIFIC DISCLIMERS, SET FORTH T www.vishay.com/doc?900
Packaging Information REEL FOR CRRIER TPE in millimeters 29 ± 1 Ø 330 ± 2.0 24.4 ± 0.3 Ø 0 ± 1 2.3 ± 0.2 6.2 ± 0.2 Ø 13.2 ± 0.2 Ø 21± 0.4 CRRIER TPE ND REEL PCKGING D 2 PK (TO-263) Top Cover Tape Embossed Carrier Tape Component Cavity Revision: 13-Oct-17 2 Document Number: 96424 For technical questions within your region: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUJECT TO CHNGE WITHOUT NOTICE. THE PRODUCTS DESCRIED HEREIN ND THIS DOCUMENT RE SUJECT TO SPECIFIC DISCLIMERS, SET FORTH T www.vishay.com/doc?900
Packaging Information COVER TPE FOR CRRIER TPE in millimeters Top view: W Section view: Y Y T Section Y - Y PPLICTION D 2 PK (TO-263) COVER TPE WIDTH W COVER TPE THICKNESS T CRRIER TPE WIDTH MTERIL 21.3 ± 0.1 0.060 ± 0.01 24 ntistatic/treated/transparent/polyester Revision: 13-Oct-17 3 Document Number: 96424 For technical questions within your region: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUJECT TO CHNGE WITHOUT NOTICE. THE PRODUCTS DESCRIED HEREIN ND THIS DOCUMENT RE SUJECT TO SPECIFIC DISCLIMERS, SET FORTH T www.vishay.com/doc?900
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