SEMICONDUCTOR TECHNICAL DATA Order this document by /D NPN Silicon COLLECTOR 3 *Motorola Preferred Device 2 BASE MAXIMUM RATINGS Rating Symbol Unit Collector Emitter Voltage VCEO 3 4 Collector Base Voltage VCBO 6 75 Emitter Base Voltage VEBO 5. 6. Collector Current Continuous IC 6 madc Total Device Dissipation @ TA = 25 C Derate above 25 C PD 625 5. EMITTER mw mw/ C 2 3 CASE 29 4, STYLE TO 92 (TO 226AA) Total Device Dissipation @ TC = 25 C Derate above 25 C PD.5 2 Watts mw/ C Operating and Storage Junction Temperature Range TJ, Tstg 55 to + C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient R JA 2 C/W Thermal Resistance, Junction to Case R JC 83.3 C/W ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted) OFF CHARACTERISTICS Collector Emitter Breakdown Voltage (IC = madc, IB = ) Characteristic Symbol Min Max Unit V(BR)CEO 3 4 Collector Base Breakdown Voltage (IC = Adc, IE = ) Emitter Base Breakdown Voltage (IE = Adc, IC = ) Collector Cutoff Current (VCE = 6, VEB(off) = 3. ) V(BR)CBO 6 75 V(BR)EBO 5. 6. ICEX nadc Collector Cutoff Current (VCB =, IE = ) (VCB = 6, IE = ) (VCB =, IE =, TA = 25 C) (VCB =, IE =, TA = 25 C) ICBO.. µadc Emitter Cutoff Current (VEB = 3., IC = ) Base Cutoff Current (VCE = 6, VEB(off) = 3. ) IEBO nadc IBL 2 nadc Preferred devices are Motorola recommended choices for future use and best overall value. Motorola Small Signal Transistors, FETs and Diodes Device Data Motorola, Inc. 996
ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted) (Continued) ON CHARACTERISTICS DC Current Gain (IC =. madc, VCE = ) (IC =. madc, VCE = ) (IC = madc, VCE = ) (IC = madc, VCE =, TA = 55 C) (IC = madc, VCE = )() (IC = madc, VCE =. )() (IC = madc, VCE = )() Collector Emitter Saturation Voltage() (IC = madc, IB = 5 madc) Characteristic Symbol Min Max Unit only hfe VCE(sat) 35 75 35 3 4 3.4.3 (IC = madc, IB = madc) Base Emitter Saturation Voltage() (IC = madc, IB = 5 madc) VBE(sat).6.6..3.2 (IC = madc, IB = madc) SMALL SIGNAL CHARACTERISTICS Current Gain Bandwidth Product(2) (IC = 2 madc, VCE = 2, f = MHz) Output Capacitance (VCB =, IE =, f =. MHz) Input Capacitance (VEB =.5, IC =, f =. MHz) Input Impedance (IC =. madc, VCE =, f =. khz) (IC = madc, VCE =, f =. khz) Voltage Feedback Ratio (IC =. madc, VCE =, f =. khz) (IC = madc, VCE =, f =. khz) Small Signal Current Gain (IC =. madc, VCE =, f =. khz) (IC = madc, VCE =, f =. khz) Output Admittance (IC =. madc, VCE =, f =. khz) (IC = madc, VCE =, f =. khz) Collector Base Time Constant (IE = 2 madc, VCB = 2, f = 3.8 MHz) Noise Figure (IC = Adc, VCE =, RS =. kω, f =. khz) SWITCHING CHARACTERISTICS only ft 2 3 2.6 2. MHz Cobo 8. pf Cibo hie hre hfe hoe 2..25 75 5. 25 3 25 8..25 8. 4. 3 375 35 2 pf kω X 4 mhos rb Cc ps NF 4. db Delay Time (VCC = 3, VBE(off) =.5, td ns Rise Time IC = madc, IB = 5 madc) (Figure ) tr 25 ns Storage Time (VCC = 3, IC = madc, ts 225 ns Fall Time IB = IB2 = 5 madc) (Figure 2) tf 6 ns. Pulse Test: Pulse Width 3 s, Duty Cycle 2.%. 2. ft is defined as the frequency at which hfe extrapolates to unity. 2 Motorola Small Signal Transistors, FETs and Diodes Device Data
SWITCHING TIME EQUIVALENT TEST CIRCUITS +6 V. to µs, DUTY CYCLE 2.% + 3 V 2 +6 V. to µs, DUTY CYCLE 2.% + 3 V 2 2 V < 2 ns kω CS* < pf 4 V < 2 ns k N94 CS* < pf Scope rise time < 4 ns 4 V *Total shunt capacitance of test jig, connectors, and oscilloscope. Figure. Turn On Time Figure 2. Turn Off Time hfe, DC CURRENT GAIN 7 3 2 7 3 2 TJ = 25 C 25 C 55 C VCE =. V VCE = V..2.3.5.7. 2. 3. 5. 7. 2 3 7 2 3 7. k Figure 3. DC Current Gain VCE, COLLECTOR EMITTER VOLTAGE (VOLTS)..8.6.4.2 IC =. ma ma ma ma.5..2.3.5..2.3.5. 2. 3. 5. 2 3 IB, BASE CURRENT (ma) Figure 4. Collector Saturation Region Motorola Small Signal Transistors, FETs and Diodes Device Data 3
t, TIME (ns) 2 7 3 2 7. 5. 3. tr @ VCC = 3 V td @ VEB(off) = 2. V td @ VEB(off) = 2. 5. 7. 2 3 7 2 Figure 5. Turn On Time IC/IB = 3 t, TIME (ns) 3 2 7 3 2 7. 5. t s = ts /8 tf tf 5. 7. 2 3 7 2 3 Figure 6. Turn Off Time VCC = 3 V IC/IB = IB = IB2 NF, NOISE FIGURE (db) 8. 6. 4. IC =. ma, RS = Ω µa, RS = 2 Ω µa, RS = 2. kω µa, RS = 4. kω RS = OPTIMUM RS = SOURCE RS = RESISTANCE NF, NOISE FIGURE (db) 8. 6. 4. f =. khz IC = µa µa µa. ma 2. 2...2.5..2.5. 2. 5. 2 f, FREQUENCY (khz) 2. k 2. k 5. k k 2 k k k RS, SOURCE RESISTANCE (OHMS) Figure 7. Frequency Effects Figure 8. Source Resistance Effects CAPACITANCE (pf) 3 2 7. 5. 3. 2.. Ceb Ccb.2.3.5.7. 2. 3. 5. 7. 2 3 REVERSE VOLTAGE (VOLTS) ft, CURRENT GAIN BANDWIDTH PRODUCT (MHz) 3 2 7 VCE = 2 V. 2. 3. 5. 7. 2 3 7 Figure 9. Capacitances Figure. Current Gain Bandwidth Product 4 Motorola Small Signal Transistors, FETs and Diodes Device Data
. +.5.8 R VC for VCE(sat) V, VOLTAGE (VOLTS).6.4 VBE(sat) @ IC/IB = VBE(on) @ VCE = V. V COEFFICIENT (mv/ C).5..5.2 VCE(sat) @ IC/IB =..2.5. 2. 5. 2 2. k Figure. On Voltages 2. 2.5 R VB for VBE..2.5. 2. 5. 2 2 Figure 2. Temperature Coefficients Motorola Small Signal Transistors, FETs and Diodes Device Data 5
PACKAGE DIMENSIONS SEATING PLANE R A X X H V N F G P N B L K C D J SECTION X X NOTES:. DIMENSIONING AND TOLERANCING PER ANSI Y4.5M, 982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSION D AND J APPLY BETWEEN L AND K MINIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. INCHES MILLIMETERS DIM MIN MAX MIN MAX A.75.25 4.45 5.2 B.7.2 4.32 5.33 C.25.65 3.8 4.9 D.6.22.4.55 F.6.9.4.48 G.45.55.5.39 H.95.5 2.42 2.66 J.5.2.39. K. 2.7 L.2 6.35 N.8.5 2.4 2.66 P. 2.54 R.5 2.93 V.35 3.43 CASE 29 4 (TO 226AA) ISSUE AD STYLE : PIN. EMITTER 2. BASE 3. COLLECTOR Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Typical parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. How to reach us: USA / EUROPE / Locations Not Listed: Motorola Literature Distribution; JAPAN: Nippon Motorola Ltd.; Tatsumi SPD JLDC, 6F Seibu Butsuryu Center, P.O. Box 292; Phoenix, Arizona 836. 8 44 2447 or 62 33 5454 3 4 2 Tatsumi Koto Ku, Tokyo 35, Japan. 3 8 352 835 MFAX: RMFAX@email.sps.mot.com TOUCHTONE 62 244 669 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, INTERNET: http://design NET.com 5 Ting Kok Road, Tai Po, N.T., Hong Kong. 852 26629298 6 Motorola Small Signal Transistors, FETs and Diodes Device /D Data