Typical Applications The HMC77ALP3E is ideal for: Fixed Wireless and LTE/WiMAX/4G BTS & Infrastructure Repeaters and Femtocells Public Safety Radio Access Points Functional Diagram Features Noise Figure:. db Gain:. db Output IP3: +29. dbm Single Supply: +3V to +V Lead 3x3mm QFN Package: 9 mm 2 General Description The HMC77ALP3E is a GaAs PHEMT MMIC Low Noise Amplifier that is ideal for fixed wireless and LTE/WiMAX/4G basestation front-end receivers operating between 4. and 6. GHz. The amplifier has been optimized to provide. db noise figure,. db gain and +29. dbm output IP3 from a single supply of +V. Input and output return losses are excellent and the LNA requires minimal external matching and bias decoupling components. The HMC77ALP3E can be biased with +3V to +V and features an externally adjustable supply current which allows the designer to tailor the linearity performance of the LNA for each application. Electrical Specifications [] [2] T A = +2 C, Rbias = 2 Ohms for Vdd = V, Rbias =.76k Ohms for Vdd = 3V Vdd = +3V Vdd = +V Parameter Units Min. Typ. Max. Min. Typ. Max. Frequency Range 4. - 6. 4. - 6. GHz Gain... db Gain Variation Over Temperature.. db/ C Noise Figure.3.3. db Input Return Loss 9 db Output Return Loss 3 db Output Power for db Compression (PdB) dbm Saturated Output Power (Psat). 9 dbm Output Third Order Intercept (IP3) 23. 29. dbm Total Supply Current (Idd) 3 6 ma [] Rbias resistor sets current, see application circuit herein [2] Vdd = Vdd = Vdd2. Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners. For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 96, Norwood, MA 62-96
Broadband Gain & Return Loss [][2] RESPONSE (db) 2 S2 S - - - - -2 S -3 2 3 4 6 7 9 Gain vs. Temperature [2] GAIN (db) 6 4 Gain vs. Temperature [] GAIN (db) Input Return Loss vs. Temperature [] RETURN LOSS (db) 9 7 3 9 7 3 4. 4.9.3.7 6. 6. +2C +C -4C - - - 2 4. 4.9.3.7 6. 6. +2C +C -4C - 4. 4.9.3.7 6. 6. +2C +C -4C Output Return Loss vs. Temperature [] Reverse Isolation vs. Temperature [] - - -2 RETURN LOSS (db) - - ISOLATION (db) -3-3 -4 - -4-2 4. 4.9.3.7 6. 6. - 4. 4.9.3.7 6. 6. +2C +C -4C +2C +C -4C [] Vdd = V, Rbias = 2Ω [2] Vdd = 3V, Rbias =.76kΩ For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 96, Norwood, MA 62-96 2
Noise Figure vs. Temperature NOISE FIGURE (db) Psat vs. Temperature Psat (dbm) [] [2] [] [2] 2. +C...2.9.6-4C +2C.3 4.4 4.6 4..2.4.6. 6 24 4. 4...4.7 6 PdB vs. Temperature PdB (dbm) [] [2] 24 4. 4...4.7 6 +2C +C -4C Output IP3 vs. Temperature IP3 (dbm) [] [2] 4 37 34 3 2 2 9 4. 4...4.7 6 +2C +C -4C +2C +C -4C Output IP3 and Total Supply Current vs. Supply Voltage @ 4 MHz [3] IP3 (dbm) 34 32 3 2 26 24 2.7 3. 3. 3.9 4.3 4.7.. Voltage Supply (V) 9 7 6 4 3 Idd (ma) Output IP3 and Total Supply Current vs. Supply Voltage @ 9 MHz [3] IP3 (dbm) 34 32 3 2 26 24 2.7 3. 3. 3.9 4.3 4.7.. Voltage Supply (V) 9 6 3 Idd (ma) IP3-3V IP3-V Idd-3V Idd-V IP3-3V IP3-V Idd-3V Idd-V [] Vdd = V, Rbias = 2Ω [2] Vdd = 3V, Rbias =.76kΩ [3] Rbias = 2Ω for Vdd = V, Rbias =.76kΩ for Vdd = 3V 3 For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 96, Norwood, MA 62-96
Power Compression @ 4 MHz [] 2 Power Compression @ 4 MHz [2] 2 Pout (dbm), GAIN (db), PAE (%) Power Compression @ 9 MHz [] Pout (dbm), GAIN (db), PAE (%) - - - - - - -4 4 INPUT POWER (dbm) Pout Gain PAE 2 - Pout (dbm), GAIN (db), PAE (%) Power Compression @ 9 MHz [2] Pout (dbm), GAIN (db), PAE (%) - - - - - - -4 4 INPUT POWER (dbm) Pout Gain PAE 2 - - - - - - -4 4 INPUT POWER (dbm) Pout Gain PAE - - - - - -4 4 INPUT POWER (dbm) Pout Gain PAE Gain, Power & Noise Figure vs. Supply Voltage @ 4 MHz [3] Gain, Power & Noise Figure vs. Supply Voltage @ 9 MHz [3].6.7..6 Gain (db) & PdB (dbm).4.3.2. NOISE FIGURE (db) Gain (db) & PdB (dbm)..4.3.2 NOISE FIGURE (db)..9 2.7 3 3.3 3.6 3.9 4.2 4. 4...4 Voltage Supply (V) 2.7 3 3.3 3.6 3.9 4.2 4. 4...4 Voltage Supply (V) PdB Gain NF PdB Gain NF [] Vdd = V, Rbias = 2Ω [2] Vdd = 3V, Rbias =.76kΩ [3] Rbias = 2Ω for Vdd = V, Rbias =.76kΩ for Vdd = 3V For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 96, Norwood, MA 62-96 4
Output IP3 vs. Rbias @ 4 MHz 34 Gain, Noise Figure & Rbias @ 4 MHz 2.2 IP3 (dbm) Output IP3 vs. Rbias @ 9 MHz IP3 (dbm) 32 3 2 26 24 Rbias (Ohms) 3 32 29 26 23 7 Rbias (Ohms) GAIN (db) Gain, Noise Figure & Rbias @ 9 MHz GAIN (db) 7 2..6.4.2 2 Rbias (Ohms).7.6..4.3.2..9. Rbias (Ohms) NOISE FIGURE (db) NOISE FIGURE (db) For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 96, Norwood, MA 62-96
Absolute Bias Resistor Range & Recommended Bias Resistor Values Vdd (V) Absolute Maximum Ratings Drain Bias Voltage (Vdd) RF Input Power (RFIN) (Vdd = + Vdc) +.V + dbm Channel Temperature C Continuous Pdiss (T= C) (derate. mw/ C above C) Thermal Resistance (channel to ground paddle).2 W C/W Rbias (Ohms) Min Max Recommended 3V.69k [] Open Circuit V 4 [2] Open Circuit Idd (ma).69k 2.94k 26.76k 3 4.2 4.4 62 6. 2 72 [] With Vdd= 3V and Rbias <.69kΩ may result in the part becoming conditionally stable which is not recommended. [2] With Vdd = V and Rbias<4Ω may result in the part becoming conditionally stable which is not recommended. ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Storage Temperature -6 to + C Operating Temperature -4 to + C ESD Sensitivity (HBM) Class A Typical Supply Current vs. Supply Voltage Rbias Vdd (V) Idd (ma) 2.7.76K 3. 3 3.3 39 4. 7 2. 72. 6 Note: Amplifier will operate over full voltage ranges shown above. For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 96, Norwood, MA 62-96 6
Outline Drawing NOTES:. LEADFRAME MATERIAL: COPPER ALLOY 2. DIMENSIONS ARE IN INCHES [MILLIMETERS] 3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE 4. PAD BURR LENGTH SHALL BE.mm MAXIMUM. PAD BURR HEIGHT SHALL BE.mm MAXIMUM.. PACKAGE WARP SHALL NOT EXCEED.mm. 6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. 7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED LAND PATTERN. Package Information Part Number Package Body Material Lead Finish MSL Rating Package Marking [3] [2] 77A HMC77ALP3E RoHS-compliant Low Stress Injection Molded Plastic % matte Sn MSL3 XXXX [] Max peak reflow temperature of 23 C [2] Max peak reflow temperature of 26 C [3] 4-Digit lot number XXXX 7 For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 96, Norwood, MA 62-96
Pin Descriptions Pin Number Function Description Interface Schematic, 3-7, 9,,,, N/C 2 RFIN BIAS No connection required. These pins may be connected to RF/DC ground without affecting performance. This pin is DC coupled See the application circuit for off-chip component. This pin is used to set the DC current of the amplifier by selection of the external bias resistor. See application circuit. RFOUT This pin is AC coupled and matched to Ohms 3, Vdd2, Vdd Power supply voltage. Bypass capacitors are required. See application circuit. GND Package bottom must be connected to RF/DC ground For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 96, Norwood, MA 62-96
THEORY OF OPERATION The HMC77A is a gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), pseudomorphic (phemt), low noise amplifier. The HMC77A amplifier uses two gain stages in series, the basic schematic for the amplifier is shown in Figure 3, which forms a low noise amplifier operating from 4. GHz to 6 GHz with excellent noise figure performance. Basic Schematic for HMC77A The HMC77A has single-ended input and output ports whose impedances are nominally equal to Ω over the 4. GHz to 6 GHz frequency range. Consequently, it can directly insert into a Ω system with no required impedance matching circuitry, which also means that multiple HMC77A amplifiers can be cascaded back to back without the need for external matching circuitry. The input and output impedances are sufficiently stable vs. variations in temperature and supply voltage that no impedance matching compensation is required. Note that it is critical to supply very low inductance ground connections to the backside exposed paddle to ensure stable operation. To achieve optimal performance from the HMC77A and prevent damage to the device, the absolute maximum ratings should not be exceeded. APPLICATIONS INFORMATION The figure above shows the basic connections for operating the HMC77A. AC couple the input with.2 pf capacitor. The RF output of the HMC77A has on chip DC block capacitor which eliminates the need for external AC coupling capacitor. Use the appropriate Rbias resistor values, given in the Absolute Bias Resistor Range & Recommended Bias Resistor Values table on page 6. The bias conditions previously listed (VDD = V, Rbias = 2Ω and VDD = 3 V, Rbias =.76kΩ) are the recommended operating points to achieve optimum performance. The data used in this data sheet was taken with the recommended bias conditions. When using the HMC77A with different bias conditions, different performance than what is shown in the Typical Performance Characteristics section may result. Increasing the Vdd level and changing the Rbias resistor to the recommended value, typically improves gain, IP3 and noise figure at the expense of power consumption. This behavior can be seen on Typical Performance Characteristics plots. 9 For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 96, Norwood, MA 62-96
Application Circuit HMC77ALP3FE Evaluation Board Schematic For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 96, Norwood, MA 62-96
Evaluation PCB Evaluation Printed Circuit Board (PCB) List of Materials for Evaluation PCB EVHMC77ALP3 [] Item J, J2 J3 - J C Description PCB mount SMA RF connectors, Johnson 2-7- PCB mount SMA RF connectors, Johnson 2-7- Capacitor, ceramic, nf, V, X7R, 42 package. The HMC77ALP3E evaluation board is a four-layer board fabricated using Rogers 43 and using best practices for high frequency RF design. The RF input and RF output traces have a Ω characteristic impedance. C2, C4 Capacitor, ceramic, nf, V, X7R, 63 package. C3, C Capacitor, ceramic,. μf, V, X7R, 63 package. C6 R Capacitor, ceramic,.2 pf,2 V, CG, High Q, 42 package. Resistor, 2 Ohm %, 42 Pkg. (Rbias) R2, R3 Ohm Resistor, 42 Pkg. U PCB HMC77ALP3E Amplifier 6 evaluation PCB; circuit board material: Rogers 43 [] Reference this number when ordering complete evaluation PCB The HMC77ALP3E evaluation board and populated components are designed to operate over the ambient temperature range of 4 C to + C. For proper bias sequence, please see the Applications information section of the datasheet. The HMC77ALP3E evaluation board schematic (HMC77ALP3FE Evaluation Board Schematic) is shown on page. A fully populated and tested evaluation board, shown above, is available from Analog Devices, Inc., upon request. For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 96, Norwood, MA 62-96