MODULATION LIGHT SOURCE FOR DWDM APPLICATIONS

Similar documents
DISCONTINUED. LASER DIODE NX8570 Series nm CW LIGHT SOURCE InGaAsP MQW-DFB LASER DIODE MODULE WITH WAVELENGTH MONITOR DESCRIPTION FEATURES

DISCONTINUED. California Eastern Laboratories NX8564LE NX8565LE NX8566LE SERIES

PRELIMINARY DATA SHEET. NEC's EA MODULATOR INTEGRATED InGaAsP MQW DFB LASER DIODE MODULE WITH DRIVER FOR 10 Gb/s APPLICATIONS

DISCONTINUED LASER DIODE NX8311UD nm FOR LONG HAUL 2.5 Gb/s InGaAsP MQW-DFB LASER DIODE TOSA DESCRIPTION FEATURES

1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s, FTTH InGaAsP MQW-FP LASER DIODE

IN COAXIAL PACKAGE FOR 2.5Gb/s APPLICATIONS

IFLD = IOP, Under modulation 2 (NX8567SAM/SA Series) (NX8567SAS Series)

FOR OPTICAL DAA, HIGH LINEAR 16-PIN SOP PHOTOCOUPLER

FOR OPTICAL DAA, HIGH LINEAR 16-PIN SOP PHOTOCOUPLER

HIGH ISOLATION VOLTAGE 4-PIN SOP PHOTOCOUPLER

6-PIN DIP, 0.08 Ω LOW ON-STATE RESISTANCE 2.0 A CONTINUOUS LOAD CURRENT 1-ch Optical Coupled MOS FET

PHOTOCOUPLER PS2801A-1,PS2801A-4

4-PIN SOP 400 V BREAK DOWN VOLTAGE NORMALLY CLOSE TYPE 1-ch Optical Coupled MOS FET

PHOTOCOUPLER PS2505-1,-2,-4,PS2505L-1,-2,-4

PHOTOCOUPLER PS2506-1,-2,-4,PS2506L-1,-2,-4

HIGH ISOLATION VOLTAGE SINGLE TRANSISTOR TYPE MULTI PHOTOCOUPLER SERIES

HIGH CMR, 10 Mbps OPEN COLLECTOR OUTPUT TYPE 5-PIN SOP PHOTOCOUPLER

HIGH COLLECTOR TO EMITTER VOLTAGE SOP MULTI PHOTOCOUPLER

HIGH CMR, 10 Mbps TOTEM POLE OUTPUT TYPE 5-PIN SOP PHOTOCOUPLER

NEC's 1310 nm InGaAsP MQW-DFB LASER DIODE IN COAXIAL PACKAGE FOR FIBER OPTIC COMMUNICATIONS

PHOTOCOUPLER PS2805-1,PS2805-4

L, S-BAND SPDT SWITCH

NEC's 1550 nm InGaAsP MQW DFB LASER DIODE IN COAXIAL PACKAGE for 622 Mb/s APPLICATION

3V OPERATION SILICON LDMOSFET RF POWER AMPLIFIER INTEGRATED CIRCUIT FOR 1.9 GHz PHS AND 2.4 GHz APPLICATIONS

NEC's NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (800 mw) 3-PIN POWER MINIMOLD (34 PACKAGE)

3.0 GHz DIVIDE BY 4 PRESCALER

MTX510E Series 10Gb/s 1550nm Electro-absorption Modulated Laser (EML) 14 Pin Package with G-S-G RF Input

NEC's NPN SILICON TRANSISTOR. ñ EIAJ 1 REGISTERED NUMBER PACKAGE OUTLINE

Narrow Linewidth Full Band Tunable DFB Laser Module. Component Specifications

5 V AGC AMPLIFIER + VIDEO AMPLIFIER

SiGe:C LOW NOISE AMPLIFIER FOR GPS

PHOTOCOUPLER PS2561-1,-2,-4,PS2561L-1,-2,-4 PS2561L1-1,-2,-4,PS2561L2-1,-2,-4

5 V, SUPER MINIMOLD WIDEBAND SI RFIC AMPLIFIER

FLD5F6CX-J. 1,550nm MQW-DFB DWDM Direct Modulation Laser

3V, SUPER MINIMOLD MEDIUM POWER SI MMIC AMPLIFIER

DATA SHEET nm OPTICAL CATV/ANALOG APPLICATIONS InGaAsP STRAINED MQW-DFB LASER DIODE MODULE

Ratings Parameter. Symbol Condition Min. Max. Storage Temperature Tstg - 20 V Photodiode Forward Current IPF. Cooling - V. Cooling

250 MHz QAM IF DOWNCONVERTER UPC2798GR

NPN SILICON TRANSISTOR

1550nm 2.5Gbit/s Directly Modulated DFB Laser module

DatasheetArchive.com. Request For Quotation

DL47B3A 2.5 Gbps 1550 nm Direct Modulation DFB Laser Module

PHOTOCOUPLER PS2533-1,-2,-4,PS2533L-1,-2,-4

DWDM CW DFB Laser Module

NEC's L TO S BAND LOW NOISE AMPLIFIER NPN GaAs HBT 2.0 ± 0.2

DWDM CW DFB Laser Module

Ratings Parameter. Symbol Condition Min. Max. Storage Temperature Tstg - 20 V PD Forward Current. Cooling - V. Cooling

10Gb/s CWDM Electro-absorption Modulated Lasers (EML) TOSA

1480nm Pump Laser Diode Module Component Specifications (with Isolator, RoHS6/6)

FLD5F6CX-H. 1,550nm MQW-DFB Continous Wave Laser

NEC's NPN SILICON TRANSISTOR

3 V SUPER MINIMOLD L-BAND SI MMIC DOWNCONVERTER

4-PIN SOP 400 V BREAK DOWN VOLTAGE NORMALLY CLOSE TYPE 1-ch Optical Coupled MOS FET

13 GHz INPUT DIVIDE BY 4 PRESCALER IC FOR SATELLITE COMMUNICATIONS

Applications. Features. Data Sheet FRL15TCWx-D86-xxxxxA Apr Full Band Tunable DFB Laser Module

FLD5F10NP. 1,550nm MQW-DFB Modulator Integrated Laser

DWDM Directly Modulated DFB Laser Module for Narrowcasting

NPN SILICON GERMANIUM RF TRANSISTOR NESG3032M14

HIGH POWER DFB LASERS

Xeston Technologies. XESTON 1550nm DWDM CW DFB Laser With PM Fiber. XQF935 Series Specification Datasheet (Preliminary)

NPN SILICON GERMANIUM RF TRANSISTOR NESG270034

1915 LMA ANALOG 6GHz. Transmission Laser Modules. KeyFeatures. Applications. For moreinfo

PHOTOCOUPLER PS2932-1,PS2933-1

DATA SHEET. InGaAsP MQW DC-PBH PULSED LASER DIODE MODULE nm OTDR APPLICATION

2.5 Gb/s Buried Het 4x100GHz Tunable Laser with Etalon Stabilisation and extended reach option LC25ET

CWDM Coaxial DFB-LD Module for CATV Return-path

Sumitomo Electric Industries, Ltd.

TX-IF SiMMIC FOR W-CDMA AGC + I/Q MODULATOR W-CDMA

Product Specification. 10Gb/s 200km Telecom CML TM 13pin-GPO Butterfly Transmitter DM /1/2

6, 8-PIN DIP, 250 V BREAK DOWN VOLTAGE NORMALLY CLOSE TYPE 1-ch, 2-ch Optical Coupled MOS FET

HIGH BANDWIDTH DFB LASERS

Product Bulletin. Temperature Tunable 10 mw WDM Laser for Direct Modulation in Links up to 180 km CQF413/608 Series

PHOTOCOUPLER PS2805C-1,PS2805C-4

Product Bulletin. 2 mw WDM Laser for Direct Modulation in Links up to 100 km CQF915/108 Series

Sumitomo Electric Industries, Ltd.

MC510 Series Electro-absorption Modulated Laser Chip (with optional carrier) 1550nm Non-ITU and DWDM Wavelengths for Applications up to 12.

nm C-Band DWDM DFB Laser Module

1550nm DWDM DFB butterfly laser module

Product Bulletin. 20 mw CW DWDM Laser with Integrated Wavelength Monitor CQF975/508 Series

1782 DWDM High Power CW Source Laser

X to Ku-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET. Part Number Order Number Package Quantity Marking Supplying Form

HIGH CMR, 10 Mbps OPEN COLLECTOR OUTPUT TYPE 5-PIN SOP (SO-5) PHOTOCOUPLER

Gb/s 1310 nm DML DFB Laser

Model 1782 DWDM High Power CW Source Laser

GPON OLT BOSA (1490nmTX DFB 1.25G/1310nmRX PIN-TIA 1.25G)

Cooled 10pin butterfly 980nm Pump Laser Module. Applications

1925 LMM PRELIMINARY. 10 Gb/s Electro-Absorptive Integrated Laser Modulator Optical Sub-Assembly 1600 ps/nm TDM LC receptacle & FPC Preliminary

1925 LMM. Transmission Laser Modules. KeyFeatures. Applications. For moreinfo

1782 DWDM High Power CW Source Laser

Up to 300 mw Fiber Bragg Grating Stabilized 980 nm Pump Modules with Tight Tracking 2700-TE Series

Description. Applications CATV Return-path Analog transmission. DFB-1xxx-C5-2-A-xx-x-x-xx REV 014 APPLIED OPTOELECTRONICS, INC.

E2560/E2580-Type 10 Gbits/s EML Modules

E2560/E2580-Type 10 Gbits/s EML Modules for 2 km 80 km Transmission

D1861A 10 Gbits/s 1310 nm DML Module

Model 1772 DWDM High Power CW Source Laser

NEC's 3.0 GHz DIVIDE BY 64/128/256 PRESCALER VOUT PACKAGE OUTLINE

Pulsed 1064nm / 1030nm Narrow Bandwidth FBG High Power Laser Diode Module

ML-COAX-X-DFB-2G5-X-X-2. CWDM COAXIAL FIBER PIGTAILED DFB LASER FOR 2.5 Gb/s DFB DIGITAL APPLICATIONS

NX8350TS. Data Sheet LASER DIODE DESCRIPTION FEATURES APPLICATIONS. R08DS0025EJ0100 Rev Sep 19, 2010

HOD /BBA HOD /BBA

Transcription:

LASER DIODE NX8563LA Series 1 550 nm InGaAsP MQW-DFB LASER DIODE MODULE 2.5 Gb/s DIRECTLY MODULATION LIGHT SOURCE FOR DWDM APPLICATIONS DESCRIPTION The NX8563LA Series is a 1 550 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser diode module with Single Mode Fiber. It is designed as directly modulation light source and ideal for optical transmission systems. The device is available for Dense Wavelength Division Multiplexing (DWDM) wavelengths based on ITU-T recommendations, enabling a wide range of applications. FEATURES Peak output power Pf = 10 mw MIN. Available for DWDM wavelengths based on ITU-T recommendations (100 GHz grid, please refer to the ORDERING INFORMATION) Internal thermo-electric cooler and isolator Hermetically sealed 14-pin butterfly package Single mode fiber pigtail Wide operation temperature range Document No. PL10428EJ02V0DS (2nd edition) Date Published September 2005 CP(K) The mark shows major revised points.

PACKAGE DIMENSIONS (UNIT: mm) 10 MIN. 8.89±0.13 1.25 7.8±0.2 5.4 0.3 1.0 7 8 15.24 2.54 0.5 20.83±0.25 26.04±0.25 29.97±0.25 1 14 4 φ 2.67 20.8 0.9 5.15 6.0 Optical Fiber (SMF) Length: 1 000 MIN. OPTICAL FIBER DIMENSIONS (UNIT: mm) 12.7±0.2 Pin No. Parameter Specification Unit Outer Diameter 0.9±0.1 mm Minimum Fiber Bending Radius 30 mm Fiber Length 1 000 MIN. mm SMF 1 2 3 4 5 6 7 + Cooler TOP VIEW #7 #1 PD LD L Thermistor R #8 #14 PIN CONNECTIONS Function Thermistor Thermistor Bias PD Anode PD Cathode Cooler Anode Cooler Cathode Pin No. 8 9 10 11 12 13 14 Function, LD Anode Signal Input 35±2 mm SC-APC : Cut angle 8 SC-UPC Fiber Length: 1 000 mm MIN. Data Sheet PL10428EJ02V0DS 2 8.99±0.5 mm

ORDERING INFORMATION NX8563LA - CD : SC-APC CC : SC-UPC Wavelength Code : Refer to Table A Without : 240 km (4 320 ps/nm) S : 100 km (1 800 ps/nm) Table A: DWDM wavelength based on ITU-T recommendations (@TLD = Tset) Wavelength Code ITU-T Wavelength *1 Frequency Wavelength Code ITU-T Wavelength *1 Frequency (nm) (THz) (nm) (THz) 303 1 530.33 195.90 509 1 550.91 193.30 311 1 531.11 195.80 517 1 551.72 193.20 318 1 531.89 195.70 525 1 552.52 193.10 326 1 532.68 195.60 533 1 553.32 193.00 334 1 533.46 195.50 541 1 554.13 192.90 342 1 534.25 195.40 549 1 554.94 192.80 350 1 535.03 195.30 557 1 555.74 192.70 358 1 535.82 195.20 565 1 556.55 192.60 366 1 536.60 195.10 573 1 557.36 192.50 373 1 537.39 195.00 581 1 558.17 192.40 381 1 538.18 194.90 589 1 558.98 192.30 389 1 538.97 194.80 597 1 559.79 192.20 397 1 539.76 194.70 606 1 560.60 192.10 405 1 540.55 194.60 614 1 561.41 192.00 413 1 541.34 194.50 421 1 542.14 194.40 429 1 542.93 194.30 437 1 543.73 194.20 445 1 544.52 194.10 453 1 545.32 194.00 461 1 546.11 193.90 469 1 546.91 193.80 477 1 547.71 193.70 485 1 548.51 193.60 493 1 549.31 193.50 501 1 550.11 193.40 *1 The value which omitted and computed the 3rd place below the decimal point Data Sheet PL10428EJ02V0DS 3

ABSOLUTE MAXIMUM RATINGS Parameter Symbol Ratings Unit Forward Current of LD IF 300 ma Reverse Voltage of LD VR 2.0 V Forward Current of PD IF 10 ma Reverse Voltage of PD VR 20 V Operating Case Temperature TC 20 to +85 C Storage Temperature Tstg 40 to +85 C Lead Soldering Temperature Tsld 260 (10 sec.) C ELECTRO-OPTICAL CHARACTERISTICS (TLD = Tset, TC = 20 to +85 C) Parameter Symbol Conditions MIN. TYP. MAX. Unit Laser Set Temperature Tset 30 45 C Forward Voltage VF Pf = 10 mw 0.9 2.0 V Threshold Current Ith 20 40 ma Optical Output Power from Fiber Pf IF = Iop, TLD = Tset 10 mw Operation Current Iop 125 ma Threshold Output Power Pth IF = Ith 100 µw Quantum Efficiency η CW 0.142 0.17 W/A Peak Emission Wavelength λp Pf = 10 mw, CW, TLD = Tset 1 530 ITU-T *1 1 562 nm Spectral Line Width ν Pf = 10 mw, CW, 3 db down 1 5 MHz Side Mode Suppression Ratio SMSR Pf = 10 mw, under modulation 30 35 db Input Impedance ZIN 25 Ω Relative Intensity Noise RIN Pf = 10 mw, 20 MHz to 3 GHz 140 db/hz Rise and Fall Time tr /tf 20-80%/80-20%, TC = 25 C 120 ps Input Return Loss S11 f = 50 MHz to 3 GHz 6 f = 3 GHz to 6 GHz 3 Band Width BW 3 db, Pf = 10 mw 2.5 GHz Dispersion Penalty DP TC = 25 C *2 2.0 db *1 Available for DWDM wavelengths based on ITU-T recommendations (100 GHz grid, please refer to the ORDERING INFORMATION) *2 2.48832 Gb/s, PRBS 2 23 1, duty cycle, Extinction Ratio 8.5 db, BER = 10 10, NX8563LAS: 1 800 ps/nm (100 km), NX8563LA: 4 320 ps/nm (240 km) 4 Data Sheet PL10428EJ02V0DS db

ELECTRO-OPTICAL CHARACTERISTICS (Applicable to Monitor PD: TLD = Tset, TC = 20 to +85 C) Parameter Symbol Conditions MIN. TYP. MAX. Unit Monitor Current Im Pf = 10 mw, VR = 5 V 100 2 000 µa Dark Current ID VR = 5 V 10 na Tracking Error γ *1 Im = const. 0.6 db *1 γ = 10 log Pf 10 mw (mw) 10 Pf 0 Pf Im (@ Pf (25 C) = 10 mw) ELECTRO-OPTICAL CHARACTERISTICS (Applicable to Thermistor and TEC: TLD = Tset, TC = 20 to +85 C) TLD = Tset, TC = 25 C TLD = Tset, TC = 20 to +85 C Parameter Symbol Conditions MIN. TYP. MAX. Unit Thermistor Resistance R TLD = 25 C 9.5 10.0 10.5 kω B Constant B 3 350 3 450 3 550 K Cooler Current IC T = 85 Tset, Pf = 10 mw 1.2 A Cooler Voltage VC T = 85 Tset, Pf = 10 mw 2.4 V Im Data Sheet PL10428EJ02V0DS 5

Subject: Compliance with EU Directives 4590 Patrick Henry Drive Santa Clara, CA 95054-1817 Telephone: (408) 919-2500 Facsimile: (408) 988-0279 CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous Substances in electrical and electronic equipment (RoHS) and the requirements of EU Directive 2003/11/EC Restriction on Penta and Octa BDE. CEL Pb-free products have the same base part number with a suffix added. The suffix A indicates that the device is Pb-free. The AZ suffix is used to designate devices containing Pb which are exempted from the requirement of RoHS directive (*). In all cases the devices have Pb-free terminals. All devices with these suffixes meet the requirements of the RoHS directive. This status is based on CEL s understanding of the EU Directives and knowledge of the materials that go into its products as of the date of disclosure of this information. Restricted Substance per RoHS Lead (Pb) Concentration Limit per RoHS (values are not yet fixed) < 1000 PPM Concentration contained in CEL devices -A -AZ Not Detected (*) Mercury < 1000 PPM Not Detected Cadmium < 100 PPM Not Detected Hexavalent Chromium < 1000 PPM Not Detected PBB < 1000 PPM Not Detected PBDE < 1000 PPM Not Detected If you should have any additional questions regarding our devices and compliance to environmental standards, please do not hesitate to contact your local representative. Important Information and Disclaimer: Information provided by CEL on its website or in other communications concerting the substance content of its products represents knowledge and belief as of the date that it is provided. CEL bases its knowledge and belief on information provided by third parties and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. CEL has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. CEL and CEL suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release. In no event shall CEL s liability arising out of such information exceed the total purchase price of the CEL part(s) at issue sold by CEL to customer on an annual basis. See CEL Terms and Conditions for additional clarification of warranties and liability.