N-Channel Power MOSFET 700V, 11A, 0.38Ω

Similar documents
N-Channel Power MOSFET 60V, 38A, 17mΩ

N-Channel Power MOSFET 900V, 4A, 4.0Ω

N-Channel Power MOSFET 100V, 81A, 10mΩ

N-Channel Power MOSFET 600V, 1A, 10Ω

N-Channel Power MOSFET 600V, 11A, 0.38Ω

N-Channel Power MOSFET 100V, 160A, 5.5mΩ

N-Channel Power MOSFET 600V, 18A, 0.19Ω

N-Channel Power MOSFET 600V, 18A, 0.19Ω

TSM6N50 500V N-Channel Power MOSFET

N-Channel Power MOSFET 800V, 0.3A, 21.6Ω

Dual P-Channel MOSFET -60V, -12A, 68mΩ

N-Channel Power MOSFET 60V, 70A, 12mΩ

N-Channel Power MOSFET 40V, 3.9A, 45mΩ

N-Channel Power MOSFET 40V, 135A, 3.8mΩ

N-Channel Power MOSFET 30V, 78A, 3.8mΩ

Dual N-Channel MOSFET 30V, 20A, 20mΩ

N-Channel Power MOSFET 150V, 9A, 65mΩ

N-Channel Power MOSFET 500V, 9A, 0.9Ω

P-Channel Power MOSFET -40V, -22A, 15mΩ

Dual N-Channel MOSFET 30V, 20A, 20mΩ

TSM3N90 900V N-Channel Power MOSFET

N-Channel Power MOSFET 150V, 1.4A, 480mΩ

N-Channel Power MOSFET 30V, 185A, 1.8mΩ

TSM70N V, 6A, 0.75Ω N-Channel Power MOSFET

N-Channel Power MOSFET 100V, 46A, 16mΩ

N- and P-Channel 60V (D-S) Power MOSFET

N-Channel Power MOSFET 40V, 121A, 3.3mΩ

TSM V N-Channel MOSFET

Not Recommended. TSM V P-Channel MOSFET. PRODUCT SUMMARY V DS (V) R DS(on) (mω) I D (A) Features. Block Diagram. Application

TSM V N-Channel MOSFET

TSM V P-Channel MOSFET

TSM2307CX 30V P-Channel MOSFET

TSM6866SD 20V Dual N-Channel MOSFET

TSM V P-Channel MOSFET

TSM V P-Channel MOSFET

Not Recommended. TSM V N-Channel MOSFET. PRODUCT SUMMARY V DS (V) R DS(on) (mω) I D (A) Features. Block Diagram. Application

TSM4936D 30V N-Channel MOSFET

TSM V P-Channel MOSFET

TSM340N06CI C0G TSM340N06CZ C0G Not Recommended

TSM2N60E 600V, 2A, 4Ω N-Channel Power MOSFET

TSM900N06 60V N-Channel Power MOSFET

TSM480P06CI C0G TSM480P06CZ C0G Not Recommended

Preliminary TSM9N50 500V N-Channel Power MOSFET

NPN Silicon Planar High Voltage Transistor

N-Channel Power MOSFET 600V, 0.5A, 10Ω

Single-Stage PFC Buck Current Control LED Driver With High Voltage MOSFET Integrated

TSM650P03CX 30V P-Channel Power MOSFET

3-Termal 500mA Negative Voltage Regulator

TSM V P-Channel Power MOSFET

TSM V N-Channel MOSFET w/esd Protected

FEATURES. Parameter Symbol Limit Unit Gate-Source Voltage V GS ± 20 V. 85 a Pulsed Drain Current I DM 600

3-Terminal 500mA Positive Voltage Regulator

N-Channel 100-V (D-S) 175 C MOSFET

N-Channel 60 V (D-S), 175 C MOSFET, Logic Level

NPN Silicon Planar High Voltage Transistor

P-Channel 100 V (D-S) MOSFET

Features. U-DFN (Type F) Pin Out Bottom View

TSM1N60L 600V N-Channel Power MOSFET

N-Channel 40-V (D-S), 175 C MOSFET

N-Channel 100-V (D-S) MOSFET

Features. Bottom View. Top View Bottom View

Dual P-Channel 2.5-V (G-S) MOSFET

P-Channel 40 V (D-S), 175 C MOSFET

N-Channel 100-V (D-S) 175 C MOSFET

Phase-Cut Dimmable and Active PFC for LED lighting With High Voltage MOSFET Integrated

DMN3032LFDB. Features and Benefits. Product Summary. Description and Applications. Mechanical Data. Ordering Information (Note 4) Marking Information

P-Channel 40 V (D-S) 175 C MOSFET

P-Channel 2.5-V (G-S) MOSFET

TSM V N-Channel MOSFET

FEATURES. Parameter Symbol Limit Unit Gate-Source Voltage V GS ± 20 V I D T C = 100 C

Dual P-Channel 60-V (D-S) 175 MOSFET

SPECIFICATIONS (T J = 25 C, unless otherwise noted)

N-Channel 150-V (D-S) MOSFET

TSM4946D 60V Dual N-Channel MOSFET

Dual N-Channel 20-V (D-S) MOSFET

Dual P-Channel 40 V (D-S) MOSFET

P-Channel 100-V (D-S) 175 C MOSFET

N-Channel 60 V (D-S), MOSFET

N-Channel 30-V (D-S) MOSFET

FEATURES G D S. Parameter Symbol Limit Unit Gate-Source Voltage V GS ± 20 V I D T C = 100 C

N- and P-Channel 30 V (D-S) MOSFET

TSM V P-Channel MOSFET

N-Channel 20 V (D-S) MOSFET

Dual N-Channel 60-V (D-S) MOSFET

N-Channel 100 V (D-S) MOSFET

N-Channel 100 V (D-S) MOSFET

Dual N-Channel 30 V (D-S) MOSFET

Dual N-Channel 30 V (D-S) MOSFET

N-Channel 30-V (D-S) 175 C MOSFET

Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode

Dual P-Channel 20-V (D-S) MOSFET

Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode

Dual P-Channel 20-V (D-S) MOSFET

Power MOSFET. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 600 V Gate-Source Voltage V GS ± 30 T C = 25 C. V GS at 10 V

Features. Drain SOT23 D. Gate. Source. Part Number Case Packaging DMG3414UQ-7 SOT23 3,000/Tape & Reel DMG3414UQ-13 SOT23 10,000/Tape & Reel

N-Channel 40-V (D-S) MOSFET

P-Channel 20-V (D-S) MOSFET

Features V DS = 700V I D = 5.0A R DS(ON) 1.8Ω. Applications. Characteristics Symbol Rating Unit

3-Termal 100mA Positive Voltage Regulator

N-Channel 30 V (D-S) MOSFET

Transcription:

N-Channel Power MOSFET 700V, 11A, 0.38Ω FEATURES Super-Junction technology High performance due to small figure-of-merit High ruggedness performance High commutation performance APPLICATION Power Supply Lighting KEY PERFORMANCE PARAMETERS PARAMETER VALUE UNIT V DS 700 V R DS(on) (max) 0.38 Ω Q g 18.8 nc ITO-220 TO-251 (IPAK) TO-252 (DPAK) Notes: MSL 3 (Moisture Sensitivity Level) for TO-252 (D-PAK) per J-STD-020 ABSOLUTE MAXIMUM RATINGS (T A = 25 C unless otherwise noted) PARAMETER SYMBOL ITO-220 IPAK/DPAK UNIT Drain-Source Voltage V DS 700 V Gate-Source Voltage V GS ±30 V Continuous Drain Current (Note 1) T C = 25 C I D 11 T C = 100 C 6.6 Pulsed Drain Current (Note 2) I DM 33 A Total Power Dissipation @ T C = 25 C P DTOT 33 125 W Single Pulsed Avalanche Energy (Note 3) E AS 156 mj Single Pulsed Avalanche Current (Note 3) I AS 2.5 A Operating Junction and Storage Temperature Range T J, T STG - 55 to +150 C A THERMAL PERFORMANCE PARAMETER SYMBOL ITO-220 IPAK/DPAK UNIT Junction to Case Thermal Resistance R ӨJC 3.8 1 C/W Junction to Ambient Thermal Resistance R ӨJA 62 C/W Notes: R ӨJA is the sum of the junction-to-case and case-to-ambient thermal resistances. The case thermal reference is defined at the solder mounting surface of the drain pins. R ӨJA is guaranteed by design while R ӨCA is determined by the user s board design. R ӨJA shown below for single device operation on FR-4 PCB in still air. Document Number: DS_P0000137 1 Version: E1706

ELECTRICAL SPECIFICATIONS (T A = 25 C unless otherwise noted) PARAMETER CONDITIONS SYMBOL MIN TYP MAX UNIT (Note 4) Static Drain-Source Breakdown Voltage V GS = 0V, I D = 250µA BV DSS 700 -- -- V Gate Threshold Voltage V DS = V GS, I D = 250µA V GS(TH) 2 3 4 V Gate Body Leakage V GS = ±30V, V DS = 0V I GSS -- -- ±100 na Zero Gate Voltage Drain Current V DS = 700V, V GS = 0V I DSS -- -- 1 µa Drain-Source On-State Resistance V GS = 10V, I D = 3.3A R DS(on) -- 0.33 0.38 Ω (Note 5) Dynamic Total Gate Charge Q g -- 18.8 -- V DS = 380V, I D = 11A, Gate-Source Charge Q gs -- 3.7 -- V GS = 10V Gate-Drain Charge Q gd -- 5.6 -- Input Capacitance V DS = 100V, V GS = 0V, C iss -- 981 -- Output Capacitance f = 1.0MHz C oss -- 58 -- Gate Resistance F = 1MHz, open drain R g -- 3.3 -- Ω (Note 6) Switching Turn-On Delay Time t d(on) -- 32 -- V DD = 380V, Turn-On Rise Time t r -- 21 -- R GEN = 35Ω, Turn-Off Delay Time t d(off) -- 62 -- I D =11A, V GS = 10V, Turn-Off Fall Time t f -- 28 -- (Note 4) Source-Drain Diode Forward On Voltage I S = 11A, V GS = 0V V SD -- -- 1.4 V Reverse Recovery Time V R =200V, I S = 5.5A t rr -- 226 -- ns Reverse Recovery Charge di F /dt = 100A/μs Q rr -- 2.1 -- μc Notes: 1. Current limited by package 2. Pulse width limited by the maximum junction temperature 3. L = 50mH, I AS = 2.5A, V DD = 50V, R G = 25Ω, Starting T J = 25 o C 4. Pulse test: PW 300µs, duty cycle 2% 5. For DESIGN AID ONLY, not subject to production testing. 6. Switching time is essentially independent of operating temperature. nc pf ns Document Number: DS_P0000137 2 Version: E1706

ORDERING INFORMATION PART NO. PACKAGE PACKING TSM70N380CI C0G ITO-220 50pcs / Tube TSM70N380CH C5G TO-251 (IPAK) 75pcs / Tube TSM70N380CP ROG TO-252 (DPAK) 2,500pcs / 13 Reel Note: 1. Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC 2. Halogen-free according to IEC 61249-2-21 definition Document Number: DS_P0000137 3 Version: E1706

CHARACTERISTICS CURVES (T C = 25 C unless otherwise noted) Output Characteristics Transfer Characteristics On-Resistance vs. Drain Current Gate-Source Voltage vs. Gate Charge On-Resistance vs. Junction Temperature Source-Drain Diode Forward Current vs. Voltage Document Number: DS_P0000137 4 Version: E1706

Normalized Effective Transient Thermal Impedance TSM70N380 CHARACTERISTICS CURVES (T C = 25 C unless otherwise noted) Capacitance vs. Drain-Source Voltage BV DSS vs. Junction Temperature Maximum Safe Operating Area (DPAK/IPAK) Maximum Safe Operating Area (ITO-220) 10 1 Normalized Thermal Transient Impedance, Junction-to-Case (ITO-220) 10 0 10-1 10-2 10-3 10-4 Duty=0.5 Duty=0.2 Duty=0.1 Duty=0.05 Duty=0.02 Duty=0.01 Single pulse 10-7 10-6 10-5 10-4 10-3 10-2 10-1 10 0 10 1 Square Wave Pulse Duration (sec) Document Number: DS_P0000137 5 Version: E1706

Normalized Effective Transient Thermal Impedance TSM70N380 ELECTRICAL CHARACTERISTICS CURVES (T C = 25 C unless otherwise noted) 10 1 Normalized Thermal Transient Impedance, Junction-to-Case (DPAK/IPAK) 10 0 10-1 10-2 10-3 Duty=0.5 Duty=0.2 Duty=0.1 Duty=0.05 Duty=0.02 Duty=0.01 Single pulse 10-4 10-7 10-6 10-5 10-4 10-3 10-2 10-1 10 0 10 1 Square Wave Pulse Duration (sec) Document Number: DS_P0000137 6 Version: E1706

PACKAGE OUTLINE DIMENSIONS (Unit: Millimeters) ITO-220 MARKING DIAGRAM G = Halogen Free Y = Year Code WW = Week Code (01~52) F = Factory Code Document Number: DS_P0000137 7 Version: E1706

PACKAGE OUTLINE DIMENSIONS (Unit: Millimeters) TO-251 MARKING DIAGRAM Y = Year Code M = Month Code for Halogen Free Product O =Jan P =Feb Q =Mar R =Apr S =May T =Jun U =Jul V =Aug W =Sep X =Oct Y =Nov Z =Dec L = Lot Code (1~9, A~Z) Document Number: DS_P0000137 8 Version: E1706

PACKAGE OUTLINE DIMENSIONS (Unit: Millimeters) TO-252 SUGGESTED PAD LAYOUT (Unit: Millimeters) MARKING DIAGRAM Y = Year Code M = Month Code for Halogen Free Product O =Jan P =Feb Q =Mar R =Apr S =May T =Jun U =Jul V =Aug W =Sep X =Oct Y =Nov Z =Dec L = Lot Code (1~9, A~Z) Document Number: DS_P0000137 9 Version: E1706

Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. Document Number: DS_P0000137 10 Version: E1706