InvenSense IDG-300 Dual-Axis Angular Rate Gyroscope Sensor

InvenSense IDG-300 Dual-Axis Angular Rate Gyroscope Sensor MEMS Process Review For comments, questions, or more information about this report, or for any additional technical needs concerning semiconductor and electronics technology, please call Sales at Chipworks. 3685 Richmond Road, Suite 500, Ottawa, ON K2H 5B7, Canada Tel: 613.829.0414 Fax: 613.829.0515 www.chipworks.com

MEMS Process Review Some of the information is this report may be covered by patents, mask and/or copyright protection. This report should not be taken as an inducement to infringe on these rights. 2007 Chipworks Inc. This report is provided exclusively for the use of the purchasing organization. It can be freely copied and distributed within the purchasing organization, conditional upon the accompanying Chipworks accreditation remaining attached. Distribution of the entire report outside of the purchasing organization is strictly forbidden. The use of portions of the document for the support of the purchasing organization s corporate interest (e.g., licensing or marketing activities) is permitted, as defined by the fair use provisions of the copyright act. Accreditation to Chipworks must be attached to any portion of the reproduced information. MPR-0702-801 11254JMRK Revision 1.0 Published: April 23, 2007 Revision 2.0 Published: May 2, 2007

MEMS Process Review Table of Contents 1 Overview 1.1 List of Figures 1.2 List of Tables 1.3 Company Profile 1.4 Introduction 1.5 Device Summary 1.6 Major Findings 2 Device Overview 2.1 Package and Device 2.2 MEMS Gyroscope, Cap and Reference Die 2.3 ASIC Portion Die Features 3 IDG-300 ASIC Basic Device Analysis 3.1 Process 4 MEMS Gyroscope Sensor and Associated Functional Elements 4.1 General Structure 4.2 Bond Pads for MEMS 4.3 MEMS Cross Section 4.4 Silicon Substrate 4.5 Process for MEMS Functional Elements of Reference Die 4.6 Process for Cap Die 4.7 IDG-300 Device Assembly 5 MEMS Sensor Architectural Analysis 5.1 Overview 5.2 Proof Mass and Various Hinges 5.3 Flexure, Spring, and Sense Electrodes 6 Critical Dimensions 6.1 Package and Device 6.2 Critical Dimensions ASIC Portion of Reference Die 6.3 Critical Dimensions MEMS Die Portion of Device 6.4 Critical Dimensions Reference Die (MEMS Functional Portion) 6.5 Critical Dimensions Cap Die 6.6 Critical Dimensions Assembled Device

MEMS Process Review 7 References 8 Statement of Measurement Uncertainty About Chipworks

Overview 1-1 1 Overview 1.1 List of Figures 2 Device Overview 2.1.1 Invensense IDG-300Q Chip on PCB Board Top View 2.1.2 Invensense IDG-300Q Chip on PCB Board Bottom View 2.1.3 Top Package View 2.1.4 Bottom Package View 2.1.5 Package Pin Out 2.1.6 Plan View Package X-Ray 2.1.7 Side View Package X-Ray 2.1.8 Gyroscope Device Plan View 2.1.9 Si Cap Die Markings 2.1.10 Gyroscope Device Tilt View 2.1.11 Gyroscope Device Side View 2.1.12 Gyroscope MEMS-Cap Corner Tilt View 2.1.13 SEM Image of Cap Die Wire Bond Plan View 2.1.14 SEM Image of ASIC Die Wire Bond Plan View 2.1.15 ASIC Die Wire Bond Tilt View 2.2.1 IDG-300 MEMS Gyroscope and Cap-Die Photographs 2.2.2 IDG-300 Y-Axis MEMS Gyroscope Die Photograph 2.2.3 IDG-300 MEMS Gyroscope Die Corner Photograph (118818-C) 2.2.4 IDG-300 MEMS Gyroscope Die Corner Photograph (118252-C) 2.2.5 IDG-300 Cap Die Photograph 2.2.6 IDG-300 Reference (ASIC) Die Photograph 2.2.7 Reference (ASIC) Die Photograph Delayered to Metal 1 2.2.8 IDG-300 Photograph of MEMS Functional Elements on the Reference Die 2.2.9 IDG-300 Photograph of Reference MEMS Die Seal Between Rate Sensors 2.2.10 Annotated Die Photograph 2.3.1 Die Markings a 2.3.2 Die Markings b 2.3.3 ASIC Die Corner a ASIC and Features Underneath MEMS 2.3.4 ASIC Die Corner a ASIC Features 2.3.5 ASIC Die Corner b ASIC Features 2.3.6 ASIC Die Corner c ASIC Features 2.3.7 ASIC Die Corner d ASIC Features 2.3.8 Minimum Pitch Bond Pads 2.3.9 Lateral NPN Transistors and Resistors 2.3.10 Logic Transistors 2.3.11 DMOS Transistors 2.3.12 MOS Transistors and Capacitors

Overview 1-2 3 IDG-300 ASIC Basic Device Analysis 3.1.1 General Structure Glass Etch 3.1.2 General Structure Silicon Etch 3.1.3 Detail Cross Section SEM Image of Poly-Poly Capacitor 3.1.4 Die Edge 3.1.5 Die Seal 3.1.6 Bond Pad Edge 3.1.7 Minimum Pitch Metal 3 3.1.8 Minimum Pitch Metal 2 3.1.9 Minimum Pitch Metal 1 3.1.10 Minimum Pitch Contacts 3.1.11 Minimum Gate Length PMOS Transistors 3.1.12 ASIC N-Well SCM 3.1.13 Start of the ASIC Devices SCM 3.1.14 ASIC P-Well and Graded Epi SRP 3.1.15 Photograph Showing Location of Measurement SRP of ASIC P-Well 3.1.16 ASIC N-Well SRP 3.1.17 Photograph Showing Location of Measurement SRP of ASIC N-Well 4 MEMS Gyroscope Sensor and Associated Functional Elements 4.1.1 General Structure of IDG-300 Device Center (S7) 4.1.2 General Structure of IDG-300 Device (S3) 4.1.3 General Structure of IDG-300 Device (S4) 4.2.1 Bond Pad Tilt View 4.2.2 EDS Spectrum of MEMS-Reference Die Bonding 4.2.3 Flexure Bond Pad 4.2.4 Sensing Peripheral Center Bond Pad 4.2.5 Sensing Electrode Bond Pad 4.2.6 Sensing Electrode Bond Pad Cross Section 4.2.7 Sensing Electrode Bond Pad Standoff Cross Section 4.3.1 Flexure Hinge 1 Cross Section (P2S3) 4.3.2 Flexure Hinge 1 Cross Section (P2S3) Detail 4.3.3 Flexure Hinge 2 Cross Section (P2S3) Detail 4.3.4 Torsional Hinge and Flexure Hinge 2 (P2S5) 4.3.5 Torsional Hinge (P2S6) 4.3.6 Torsional Hinge (P2S6) Detail 4.3.7 Peripheral Center Sensing Electrode Capacitance Fingers (P2S7) 4.3.8 Capacitance Fingers (P2S7) Detail 4.4.1 SCM Image of IDG-300 Gyroscope Device (P2) 4.5.1 MEMS Functional Features of Reference Die Tilt View 4.5.2 X-Rate Sensor on Reference Die Plan View 4.5.3 Drive Electrodes in the Center of Cavity 4.5.4 Drive Electrodes on Cavity Edge 4.5.5 Drive Electrodes in the Center of Cavity Tilt View 4.5.6 Reference Wafer Cavity DRIE Sidewall Tilt View 4.5.7 Reference Die Bond Pads Plan View

Overview 1-3 4.5.8 Reference Die Peripheral Center Bond Pads Plan View 4.5.9 Center Drive Electrodes 4.5.10 Center Drive Electrodes Detail 4.5.11 Drive Electrodes on Cavity Right Edge Detail 4.5.12 Drive Electrodes on Cavity Left Edge Detail 4.5.13 Cavity Left Edge Detail Cross Section 4.6.1 Cap Die Tilt View 4.6.2 Pyramids on Cap Plan View 4.6.3 Pyramids on Cap Tilt View 4.6.4 Alignment Trench on Cap Optical Plan View 4.6.5 Cap Bond Pad 4.6.6 Cap Bond Pad Edge 4.6.7 Left Edge of Alignment Trench on Cap 4.6.8 Right Edge of Alignment Trench on Cap 4.6.9 Cross Section of Cap 4.6.10 Cap Underside Oxide Layer 4.6.11 Cross Section of Pyramids on Cap 4.7.1 Edge of MEMS-Cap Die 4.7.2 Edge of MEMS-Cap Die Detail 4.7.3 MEMS-ASIC Die Bonding 4.7.4 MEMS-ASIC Die Bonding Peripheral Center Bond Pad 5 MEMS Sensor Architectural Analysis 5.1.1 Block Diagram 5.1.2 IDG-300 Gyroscope Plan View Optical 5.1.3 IDG-300 Gyroscope Tilt View SEM 5.1.4 Annotated IDG-300 Gyroscope MEMS Plan View SEM 5.2.1 Plate and Flexure Hinge 2-1 and Torsional Hinge 1 Part 1 5.2.2 Plate, Proof Mass 1, and Flexure Hinges 2-2 and 2-1 Part 2 5.2.3 Centre Plate, Flexure Hinges 1-3 and 1-4, and Hinge 1 Part 1 5.2.4 Centre Plate, Flexure Hinges 1-3 and 1-4, and Hinge 1 Part 2 5.2.5 Centre Plate, Flexure Hinges 1-1 and 1-2, and Hinge 2 Part 1 5.2.6 Centre Plate Hinge 1 H 1 (P1) 5.2.7 Centre Plate Hinge 2 H 2 (P1) 5.2.8 Flexure Hinges 1-1 (FH 1-1) Detail 5.2.9 Flexure Hinges 1-2 (FH 1-2) 5.2.10 Flexure Hinges 1-3 and 1-4 (FH 1-3, 1-4) 5.2.11 Flexure Hinges 1-3 and 1-4 (FH 1-3, 1-4) Part 2 5.2.12 Flexure Hinge 2-1 (FH 2-1) Detail 5.2.13 Flexure Hinge 2-2 (FH 2-2) Part 2 5.2.14 Flexure Hinge 2-3 (FH 2-3) Detail 5.2.15 Torsion Hinge 1 (TH 1) Detail 5.2.16 Torsion Hinge 2 (TH 2) and Flexure Hinge 2 (FH 2) Part 2 5.2.17 Torsion Hinge 3 (TH 3) Detail 5.2.18 Torsion Hinge 4 (TH 4) Detail 5.2.19 Centre Plate Hinge

Overview 1-4 5.2.20 Torsion Hinge Width 5.2.21 Flexure Hinge 1 Width 5.2.22 Flexure Hinge 2 Width 5.2.23 Flexure Spring Hinge Width 5.3.1 General Structure of Flexure, Spring and Sensor Electrodes Plan View 5.3.2 General Structure of Flexure, Spring and Sensor Electrodes Tilt View 5.3.3 Electrode Isolation Trench and Capacitance Fingers Tilt View SEM 5.3.4 Flexure Spring and Capacitance Fingers Tilt View SEM 5.3.5 Flexure Spring 5.3.6 Capacitance Fingers 1.2 List of Tables 1 Overview 1.4.1 Device Identification 1.5.1 Device Summary for IDG-300 Gyroscope Sensor Packaged Device 1.5.2 Device Summary for IDG-300 Gyroscope Cap Die 1.5.3 Device Summary for IDG-300 Gyroscope Sensor Die 1.5.4 Device Summary for IDG-300 ASIC Die 1.6.1 Summary of Major Findings for Cap Die 1.6.2 Summary of Major Findings MEMS Gyroscope Die 1.6.3 Summary of Major Findings for Control ASIC Portion of Die Process 2 Device Overview 2.1.1 IDG 300 Pressure Volume and Residual Gas Analysis 2.2.1 IDG-300 Package and Die Dimensions 2.3.1 Summary of Dimensions for ASIC Portion of the IDG-300 3 IDG-300 ASIC Basic Device Analysis 3.1.1 ASIC Dielectric Layers Observed Critical Dimensions 3.1.2 ASIC Metal Layers Observed Critical Dimensions 4 MEMS Gyroscope Sensor and Associated Functional Elements 4.3.1 MEMS Die Features Dimensions 4.5.1 Reference Die (MEMS Functional Part) Feature Dimensions 4.6.1 Cap Die Feature Dimensions 4.7.1 Assembled Device Feature Dimension 5 MEMS Sensor Architectural Analysis 5.1.1 IDG-300 MEMS Critical Parameters 6 Critical Dimensions 6.1.1 IDG-300 Package and Die Dimensions 6.2.1 Summary of Dimensions for ASIC Portion of the IDG-300 6.2.2 ASIC Dielectric Layer Observed Critical Dimensions 6.2.3 ASIC Metal Layers Observed Critical Dimensions 6.3.1 MEMS Die Features Dimensions 6.4.1 Reference Die (MEMS Functional Part) Feature Dimensions 6.5.1 Cap Die Feature Dimensions 6.6.1 Assembled Device Feature Dimension

InvenSense IDG-300 Dual Axis Angular Rate Gyroscope Sensor About Chipworks About Chipworks Chipworks is the recognized leader in reverse engineering and patent infringement analysis of semiconductors and electronic systems. The company s ability to analyze the circuitry and physical composition of these systems makes them a key partner in the success of the world s largest semiconductor and microelectronics companies. Intellectual property groups and their legal counsel trust Chipworks for success in patent licensing and litigation earning hundreds of millions of dollars in patent licenses, and saving as much in royalty payments. Research & Development and Product Management rely on Chipworks for success in new product design and launch, saving hundreds of millions of dollars in design, and earning even more through superior product design and faster launches. Contact Chipworks To find out more information on this report, or any other reports in our library, please contact Chipworks at: Chipworks 3685 Richmond Rd. Suite 500 Ottawa, Ontario K2H 5B7 Canada T: 1.613.829.0414 F: 1.613.829.0515 Web site: www.chipworks.com Email: info@chipworks.com Please send any feedback to feedback@chipworks.com