Analog Devices AD7658 Analog to Digital Converter icmos Process Technology Process Review

Similar documents
PowerDsine/Freescale

Akustica AKU2000 MEMS Microphone. MEMS Process Review

Peregrine Semiconductor PE4268 SP6T RF UltraCMOS TM Switch Structural Analysis

Microchip PIC18F4320-I/ML Enhanced Flash Microcontroller Structural Analysis

Volterra VT1115MF PWM Controller Chip

Toshiba TH58NVG2S3BTG00 4 Gbit NAND Flash Structural Analysis

Matrix Semiconductor One Time Programmable Memory

Texas Instruments ISO7220A Capacitor Type Digital Isolator

Spansion S29GL512N11TAI Mbit MirrorBit TM Flash Memory Structural Analysis

Samsung K9HAG08U1M-PCB0 16 Gbit MLC NAND Flash Structural Analysis Report

Nanya elixir N2TU51280AF-37B 512 Mbit DDR2 SDRAM Structural Analysis

Samsung K9G8G08U0M-PCB0 8 Gbit MLC NAND Flash Structural Analysis

Samsung K9F2G08U0M-YCB0 2Gbit NAND Flash Device Structural Analysis

Texas Instruments THS7530PWP Gain Amplifier Structural Analysis

Texas Instruments BRF6350B Bluetooth Link Controller UMC 90 nm RF CMOS

Sharp NC Megapixel CCD Imager Process Review

Silicon Storage Technology SST39VF800A 8 Mbit Multi-Purpose Flash Memory Structural Analysis

Samsung S5K3BAFB 2 Megapixel CMOS Image Sensor 0.13 µm Copper CMOS Process Process Review Report

Oki 2BM6143 Microcontroller Unit Extracted from Casio GW2500 Watch 0.25 µm CMOS Process

Sony IMX018 CMOS Image Sensor Imager Process Review

Sony IMX Megapixel, 1.4 µm Pixel 1/3.2 Optical Format CMOS Image Sensor

LSI Logic LSI53C1030 PCI-X to Dual Channel Ultra320 SCSI Controller 0.18 µm CMOS Process

Motorola PRF5P21240 RF Power MOSFET Structural Analysis

FUJIFILM MS3897A CCD Image Sensor Imager Process Review

nvidia GeForce FX 5700 Ultra (NV36) Graphics Processor Structural Analysis

Microsoft X02046 IBM PowerPC Processor from the XBOX 360 Structural Analysis

MEMSIC MMC3120M Tri-Axis Magnetic Sensor

Nikon 12.1 Mp CMOS Image Sensor from a D3s DSLR Camera with NC81361A Die Markings

Samsung K4H510838C-UCCC 512Mbit DDR SDRAM Structural Analysis

Panasonic DMC-GH Mp, 4.4 µm Pixel Size LiveMOS Image Sensor from Panasonic LUMIX DMC-GH1 Micro Four Thirds Digital Interchangeable Lens Camera

NVE IL715-3E GMR Type Digital Isolator (30457J Die Markings) 0.50 µm CMOS Process

Micron MT9T Megapixel, ¼ Optical Format, 1.75 µm Pixel Size System-on-Chip (SOC) CMOS Image Sensor

Powerchip Semiconductor Corporation A3R12E3GEF G6E 635BLC4M 512 Megabit DDR2 SDRAM Structural Analysis

FLIR Systems Indigo ISC0601B from Extech i5 Infrared Camera

Motorola MPXV5004G Integrated Pressure Sensor Structural Analysis

Olympus EVOLT E-410/Matsushita LiveMOS Image Sensor

OmniVision OV2640 1/4-Inch 2 Megapixel CMOS Image Sensor (OV253AI Die Markings) TSMC 0.13 µm Process

MagnaChip MC511DB 1.3 Megapixel CMOS Image Sensor 0.18 µm Process

STMicroelectronics LIS3L02AE 3-Axis Accelerometer. MEMS Process Review

SiTime SIT8002AC-13-18E50 One Time Programmable Oscillator

1.3 Megapixel CMOS Image Sensor Process Review (including MN101E19A Signal Processing DSP Basic Device Analysis)

InvenSense ITG-3200 Three-Axis Digital Output Yaw, Pitch, and Roll Gyroscope

CMOSIS CMV Mp, 5.5 µm Pixel Pitch High-Speed Pipelined Global Shutter CMOS Image Sensor with Correlated Double Sampling

Freescale MCIMX357DVM5B 90 nm Multimedia Application Processor

Foveon FX17-78-F13D Mp, 7.8 µm Pixel Size CIS from Sigma DP1 Compact Digital Camera 0.18 µm Dongbu Process

Texas Instruments Sitara XAM3715CBC Application Processor 45 nm UMC Low Power Process

Broadcom BCM43224KMLG Baseband/MAC/Radio All-in-One Die SMIC 65 nm Process

Rockchip RK3188 Mobile Application Processor GF 28 nm SLP Gate First HKMG CMOS Process

TriQuint SCM6M7010 WiMAX Dual-Band WiFi Front-End Module TriQuint TQPED 0.5 µm E-D phemt Process

Bosch Sensortec BMP180 Pressure Sensor

IBM POWER7 Server 46J6702 IBM 45 nm Dual Stress Liner SOI CMOS Process with edram

Samsung K4B1G0846F-HCF8 1 Gbit DDR3 SDRAM 48 nm CMOS DRAM Process

InvenSense IDG-300 Dual-Axis Angular Rate Gyroscope Sensor

Qualcomm QFE1100 Envelope Tracking PA Power Supply

STMicroelectronics STMT05 S-Touch Capacitive Touch Screen Controller

Micron MT66R7072A10AB5ZZW 1 Gbit Phase Change Memory 45 nm BiCMOS PCM Process

MemsTech MSM3C-S4045 Integrated Silicon Microphone with Supplementary TEM Analysis

Intel Q3GM ES 32 nm CPU (from Core i5 660)

Intel T2300 (Yonah 65 nm node) 1.66 GHz Dual Core Laptop Microprocessor Transistor Characterization Report

Sony IMX118CQT 18.5 Mp, 1.25 µm Pixel Pitch Back Illuminated CIS from the Sony DSC-WX100 Camera

Intel D920 (Presler 65 nm node) 2.8 GHz Dual Core Microprocessor

Nikon NC81369R 24.2 Mp, 3.8 µm Pixel Size, APS-C Format CMOS Image Sensor from the Nikon D3200. Module 1: Overview Analysis

Texas Instruments/Apple 343S0538 Touch Screen Controller with F Die Markings

Sony IMX128AQP 24.3 Mp 5.9 µm Pixel Pitch CMOS Image Sensor from Nikon D600. Module 1: Overview Analysis

Marvell 88E6046-TAH1 Four Port Fast Ethernet Plus Two Port Gigabit Ethernet Switch

AKM AK8973 and AK Axis Electronic Compass

Sony IMX Mp, 4.8 µm Pixel Size APS-C (DX Format) CMOS Image Sensor from Nikon D7000. Module 5: Substrate Dopant Analysis

Qualcomm MSM8260A Snapdragon S4 Dual-Core System-on-Chip (SoC) Mobile Applications Processor

Marvell I1062-B0 Hard Drive Controller SoC

Altera 5SGXEA7K2F40C2ES Stratix V TSMC 28 nm HP Gate Last HKMG CMOS Process

Nikon NC81369R 24.2 Mp, 3.8 µm Pixel Size, APS-C Format CMOS Image Sensor from the Nikon D3200. Module 5: Substrate Dopant Analysis

MediaTek MT6167A Smartphone Radio Frequency (RF) Transceiver

Nikon NC81369R 24.2 Mp, 3.8 µm Pixel Size, APS-C Format CMOS Image Sensor from the Nikon D3200. Module 4: Pixel Cross-Sectional Analysis

FocalTech FT5206GE1 Capacitive Touch Screen Controller IC

Intel Xeon E3-1230V2 CPU Ivy Bridge Tri-Gate 22 nm Process

Apple A5 APL0498 (APL0498E01 Die Markings) Mobile Processor Extracted from the ipad 2

MediaTek MT3333AV (BT10085B Die) Satellite Receiver SoC

Freescale MCIMX535DVV1C i.mx535 Mobile Applications Processor

Samsung SDP1301 DTV SERDES Interface

OmniVision OVM7692 (OV289AA Die Markings) VGA CameraCubeChip. Module 3: Planar Pixel Analysis

Apple/Dialog Semiconductor 343S0622-A1/D2018A WLED Driver

Qualcomm Atheros AR8035 Ultra Low Power Single RGMII Gigabit Ethernet PHY

AuthenTec AES1710 Secure Slide Fingerprint Sensor

Freescale MCIMX6Q5EYM10AC (i.mx6q) Integrated Multimedia Applications Processor

FocalTech Systems FT5336GQQ and FT5436iGQQ (FS-123ATPBC Die) Capacitive Touch Screen Controller

Canon LC Mp, 4.3 µm Pixel Size, APS-C Format CMOS Image Sensor from the Canon EOS Rebel T4i (EOS 650D/EOS Kiss X6i)

RDA Microelectronics RDA8851A GSM/GPRS Baseband SoC

OmniVision OVM7692 (OV289AA Die Markings) VGA CameraCubeChip. Module 1: Overview Analysis

Apple/Cirrus Logic 338S1081/46L01 Multi-Standard Audio Decoder

Sony IMX096AQL 24.3 Mp, 3.9 µm Pixel Pitch APS-C CMOS Image Sensor from the Sony α77 (SLT-A77) Digital Single Lens Reflex (DSLR) Camera

Qualcomm MDM6600 Gobi Baseband Processor Plus RF Transceiver

u-blox M8030-KT Concurrent Multi-GNSS Receiver

Marvell Avastar 88W ac Wi-Fi 2x2 MIMO Combo Chip

Analog Devices ADMP403 MEMS Microphone

Texas Instruments TXS0108EZXYR 8 Bit Bidirectional Voltage-Level Translator

Texas Instruments WL1283C WiLink 7.0 Single Chip WLAN, GPS, Bluetooth, and FM Transceiver

Sony PMW-F55 CineAlta 4K PMW Series HD Super 35 mm Digital Motion Camera with Global Shutter CMOS Image Sensor. Module 3: Planar Pixel Analysis

Fullhan FH8520 Image Signal Processor

Altera APEX EP20K600CB652C8ES Programmable Logic Device Structural Analysis

Samsung K3PE7E700B-XXC1 3x nm 4 Gbit Mobile DRAM. DRAM Process Report with Custom BEOL and Dopant Analysis

Transcription:

November 1, 2005 Analog Devices AD7658 Analog to Digital Converter icmos Process Technology Process Review For comments, questions, or more information about this report, or for any additional technical needs concerning semiconductor technology, please call Sales at Chipworks.

Process Review Table of contents 1 Overview 1.1 List of Figures 1.2 List of Tables 1.3 Company Profile 1.4 Introduction 1.5 Device Summary 1.6 Major Findings 2 Package and Die 2.1 Package 2.2 Die 2.3 Die Features 3 Process 3.1 General Structure 3.2 Bond Pads 3.3 Dielectrics 3.4 Metallization 3.5 Vias and Contacts 3.6 Double Poly MIM Capacitors 3.7 Poly Resistors 3.8 MOS Transistors 3.9 Isolation 3.10 Lateral PNP Bipolar Devices 3.11 Diodes 3.12 Wells, Epi and Substrate 3.13 High Voltage MOS Transistors 4 References 5 Critical Dimensions 5.1 Package and Die 5.2 Vertical Dimensions 5.3 Horizontal Dimensions Report Evaluation PPR-0510-901 November 1, 2005

Overview 1-1 1 Overview 1.1 List of Figures 2 Package and Die 2.1.1 Package Top 2.1.2 Package Bottom 2.1.3 Pin Diagram 2.1.4 Package x-ray Top-View 2.1.5 Package x-ray Side-View 2.2.1 Die Photograph 2.2.2 Die Markings 2.2.3 Die Photograph at Metal 1 2.2.4 Die Photograph at Poly 2.2.5 Annotated Die Photograph 2.3.1 Die Corner a 2.3.2 Die Corner b 2.3.3 Die Corner c 2.3.4 Die Corner d 2.3.5 Minimum Pitch Bond Pads 2.3.6 Single Bond Pad 3 Process 3.1.1 General Structure 3.1.2 Die Edge 3.1.3 Die Edge Seal 3.2.1 Ball Bond to Bond Pad 3.2.2 Bond Pad Edge 3.2.3 Bond Pad Edge Detail 3.3.1 Dielectrics General Structure 3.3.2 Passivation 3.3.3 IMD 2 3.3.4 IMD 1 3.3.5 PMD 3.3.6 PMD and LOCOS Isolation 3.4.1 Metallization General Structure 3.4.2 Minimum Pitch Metal 3 3.4.3 Minimum Pitch Metal 2 3.4.4 Minimum Pitch Metal 1

Overview 1-2 3.5.1 Vias and Contacts General Structure 3.5.2 Minimum Pitch Via 2s 3.5.3 Minimum Pitch Via 1s 3.5.4 Minimum Pitch Contacts to Substrate 3.5.5 Contact to Poly 2 3.5.6 Contacts to Poly 1 3.6.1 Poly MIM Capacitors and Poly Resistors 3.6.2 Poly MIM Capacitor 3.6.3 Contact to Poly MIM Capacitor Detail 3.6.4 Interpoly Dielectric and Cap Oxide 3.7.1 Poly Resistors 3.7.2 Poly Resistor Contact 3.7.3 Poly Resistor Pitch 3.7.4 Poly Resistor Pitch Detail 3.8.1 Minimum Gate Length NMOS Transistor 3.8.2 Minimum Gate Length PMOS Transistor 3.8.3 MOS Transistors (Glass-Etch Only) 3.8.4 Minimum Pitch NMOS Transistors 3.8.5 Minimum Pitch PMOS Transistors 3.8.6 NMOS Transistor with Double Contact Plan-View 3.8.7 NMOS Transistor with Double Contact 3.8.8 Large NMOS Transistor 3.9.1 Minimum Width LOCOS Isolation 3.9.2 Poly over Minimum Width LOCOS Isolation 3.9.3 Poly over LOCOS Isolation 3.10.1 PNP Device at Metal 3 Plan-View 3.10.2 PNP Device at Poly Plan-View 3.10.3 Large PNP Device (Cross-Section 5) 3.10.4 Large PNP Device Detail (Cross-Section 5) 3.10.5 Large PNP Device SCM (Cross-Section 9) 3.10.6 Small PNP Devices SCM (Cross-Section 8) 3.10.7 Small PNP Device Detail SCM (Cross-Section 8) 3.11.1 Diodes at Metal 3 Plan-View 3.11.2 Diode (Cross-Section 2) 3.11.3 Diode SCM 3.11.4 Diode Detail SCM

Overview 1-3 3.12.1 Well and Epi Structure 3.12.2 Shallow Wells SCM 3.12.3 SRP of P-Well 3.12.4 SRP of N-Well 3.13.1 HVMOS Transistors Plan-View 3.13.2 HVMOS Transistors Detail Plan-View 3.13.3 HVNMOS Transistor Overview 3.13.4 HVNMOS Transistor 3.13.5 HVNMOS Transistor Contact to Gate Spacing 3.13.6 HVNMOS Transistor Gate Oxide 3.13.7 HVNMOS Transistor SCM 3.13.8 HVNMOS Transistor SCM Detail 3.13.9 HVPMOS Transistor Overview 3.13.10 HVPMOS Transistor 3.13.11 HVPMOS Transistor Contact to Gate Spacing 3.13.12 HVPMOS Transistor Gate Oxide 3.13.13 HVPMOS Transistor SCM 3.13.14 HVPMOS Transistor SCM Detail

Overview 1-4 1.2 List of Tables 1 Overview 1.5.1 Device Summary 1.6.1 Summary of Major Findings 2 Package and Die 2.3.1 Package and Die Dimensions 3 Process 3.3.1 Dielectric Composition and Thicknesses 3.4.1 Metallization Composition and Thicknesses 3.4.2 Minimum Metals Horizontal Dimensions 3.5.1 Via and Contact Horizontal Dimensions 3.8.1 Transistor and Polysilicon Horizontal Dimensions 3.8.2 Transistor and Polysilicon Vertical Dimensions 3.9.1 Isolation Horizontal Dimensions 3.12.1 Wells and Epi Vertical Dimensions 3.13.1 HV Transistor and Polysilicon Horizontal Dimensions 3.13.2 HV Transistor and Polysilicon Vertical Dimensions 5 Critical Dimensions 5.1.1 Package and Die Dimensions 5.2.1 Vertical Dimensions 5.3.1 Horizontal Dimensions

About Chipworks Chipworks is the recognized leader in reverse engineering and patent infringement analysis of semiconductors and electronic systems. The company s ability to analyze the circuitry and physical composition of these systems makes them a key partner in the success of the world s largest semiconductor and microelectronics companies. Intellectual property groups and their legal counsel trust Chipworks for success in patent licensing and litigation earning hundreds of millions of dollars in patent licenses, and saving as much in royalty payments. Research & Development and Product Management rely on Chipworks for success in new product design and launch, saving hundreds of millions of dollars in design, and earning even more through superior product design and faster launches. Contact Chipworks To find out more information on this report, or any other reports in our library, please contact Chipworks at: Chipworks 3685 Richmond Rd. Suite 500 Ottawa, Ontario K2H 5B7 Canada T: 1.613.829.0414 F: 1.613.829.0515 Web site: www.chipworks.com Email: info@chipworks.com Please send any feedback to feedback@chipworks.com