Thyristor High Voltage, Phase Control SCR, 25 TO-220B 2 3 2 () (K) (G) 3 FETURES Easy control peak current at charger power up to reduce passive / electromechanical components Meets JESD 20 class whisker test Flexible solution for reliable C power rectification EC-Q qualified Material categorization: for definitions of compliance please see www.vishay.com/doc?9992 PRIMRY CHRCTERISTICS I T(V) 6 V DRM /V RRM 200 V V TM.25 V I GT 45 m T J -40 C to +25 C Package TO-220B Circuit configuration Single SCR PPLICTIONS On-board and off-board EV/HEV battery chargers Renewable energy inverters DESCRIPTION The high voltage series of silicon controlled rectifiers are specifically designed for medium power switching and phase control applications. OUTPUT CURRENT IN TYPICL PPLICTIONS PPLICTIONS SINGLE-PHSE BRIDGE THREE-PHSE BRIDGE UNITS Capacitive input filter T = 55 C,, common heatsink of C/W 8 22 MJOR RTINGS ND CHRCTERISTICS PRMETER TEST CONDITIONS VLUES UNITS I T(V) Sinusoidal waveform 6 I RMS 25 V RRM /V DRM 200 V I TSM 320 V T 6,.25 V dv/dt 500 V/μs di/dt 50 /μs T J -40 to +25 C VOLTGE RTINGS PRT NUMBER V RRM, MXIMUM PEK REVERSE VOLTGE V V DRM, MXIMUM PEK DIRECT VOLTGE V I RRM /I DRM T 25 C m 200 200 Revision: 04-Jun-208 Document Number: 96530 For technical questions within your region: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHNGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN ND THIS DOCUMENT RE SUBJECT TO SPECIFIC DISCLIMERS, SET FORTH T www.vishay.com/doc?900
BSOLUTE MXIMUM RTINGS PRMETER SYMBOL TEST CONDITIONS VLUES TYP. MX. Maximum average on-state current I T(V) T C = 93 C, conduction half sine wave 6 Maximum RMS on-state current I RMS 25 Maximum peak, one-cycle, non-repetitive surge current I TSM ms sine pulse, rated V RRM applied 270 ms sine pulse, no voltage reapplied 320 Maximum I 2 t for fusing I 2 t ms sine pulse, rated V RRM applied 365 ms sine pulse, no voltage reapplied 55 2 s Maximum I 2 t for fusing I 2 t t = 0. to ms, no voltage reapplied 552 2 s Maximum on-state voltage drop V TM 6,.25 V On-state slope resistance r t 2.0 m Threshold voltage V T(TO).0 V Maximum reverse and direct leakage 0.5 I current RM /I DM V R = rated V RRM /V DRM node supply = 6 V, resistive load, initial I m Holding current I T =, H - 50 Maximum latching current I L node supply = 6 V, resistive load, 200 Maximum rate of rise of off-state voltage dv/dt T J = T J max., linear to 80 C, V DRM = R g - k = open 500 V/μs Maximum rate of rise of turned-on current di/dt 50 /μs UNITS TRIGGERING PRMETER SYMBOL TEST CONDITIONS VLUES UNITS Maximum peak gate power P GM 8.0 Maximum average gate power P G(V) 2.0 W Maximum peak positive gate current +I GM.5 Maximum peak negative gate voltage -V GM V Maximum required DC gate current to trigger node supply = 6 V, resistive load, 45 m node supply = 6 V, resistive load, T J = - C 60 node supply = 6 V, resistive load, 20 V GT Maximum required DC gate voltage to trigger node supply = 6 V, resistive load, 2.0 node supply = 6 V, resistive load,.0 V node supply = 6 V, resistive load, T J = - C 2.5 Maximum DC gate voltage not to trigger V GD 0.25, V DRM = rated value Maximum DC gate current not to trigger I GD 2.0 m SWITCHING PRMETER SYMBOL TEST CONDITIONS VLUES UNITS Typical turn-on time t gt 0.9 Typical reverse recovery time t rr 4 μs Typical turn-off time t q Revision: 04-Jun-208 2 Document Number: 96530 For technical questions within your region: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHNGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN ND THIS DOCUMENT RE SUBJECT TO SPECIFIC DISCLIMERS, SET FORTH T www.vishay.com/doc?900
THERML ND MECHNICL SPECIFICTIONS PRMETER SYMBOL TEST CONDITIONS VLUES UNITS Maximum junction and storage temperature range T J, T Stg -40 to 25 C Maximum thermal resistance, junction to case R thjc DC operation. Maximum thermal resistance, junction to ambient R thj 62 C/W Typical thermal resistance, case to heatsink R thcs Mounting surface, smooth and greased 0.5 pproximate weight 2 g 0.07 oz. minimum 6 (5) kgf cm Mounting torque maximum 2 () (lbf in) Marking device Case style TO-220B 25TTS2H 30 25 Maximum llowable Case Temperature ( C) 20 0 R thjc (DC) =. C/W Conduction angle 30 60 20 90 0 5 5 20 Maximum verage On-State Power Loss (W) 20 5 20 60 30 RMS limit Conduction angle 5 0 0 4 8 2 6 20 verage On-State Current () verage On-State Current () Fig. - Current Rating Characteristics Fig. 3 - On-State Power Loss Characteristics Maximum llowable Case Temperature ( C) 30 20 0 R thjc (DC) =. C/W Conduction period 30 90 20 60 DC 80 0 5 5 20 25 30 Maximum verage On-State Power Loss (W) 35 30 25 20 5 5 DC 20 60 30 RMS limit Conduction period 0 0 5 5 20 25 30 verage On-State Current () verage On-State Current () Fig. 2 - Current Rating Characteristics Fig. 4 - On-State Power Loss Characteristics Revision: 04-Jun-208 3 Document Number: 96530 For technical questions within your region: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHNGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN ND THIS DOCUMENT RE SUBJECT TO SPECIFIC DISCLIMERS, SET FORTH T www.vishay.com/doc?900
Peak Half Sine Wave On-State Current () 300 280 260 240 220 200 80 60 40 t any rated load condition and with rated V RRM applied following surge Initial T J = 50 C at 60 Hz 0.0083 s at 50 Hz 0.00 s VS- Peak Half Sine Wave On-State Current () 350 300 250 200 50 Maximum non-repetitive surge current versus pulse train duration. Control of conduction may not be maintained. VS- Initial T J = 50 C No voltage reapplied Rated V RRM reapplied 20 0 Number of Equal mplitude Half Cycle Current Pulses (N) 0 0.0 0. Pulse Train Duration (s) Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current Instantaneous On-State Current () 00 0 0 2 3 4 5 Instantaneous On-State Voltage (V) Fig. 7 - On-State Voltage Drop Characteristics Instantaneous Gate Voltage (V) 0 0. 0.00 Rectangular gate pulse a) Recommended load line for rated di/dt: V, 20 Ω t r = 0.5 µs, t p 6 µs b) Recommended load line for 30 % rated di/dt: V, 65 Ω t r = µs, t p 6 µs V GD IGD (b) T J = C (a) 0.0 0. 0 Instantaneous Gate Current () () P GM = 40 W, t p = ms (2) P GM = 20 W, t p = 2 ms (3) P GM = 8 W, t p = 5 ms (4) P GM = 4 W, t p = ms (4) (3) (2) () Frequency limited by P G(V) Fig. 8 - Gate Characteristics Revision: 04-Jun-208 4 Document Number: 96530 For technical questions within your region: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHNGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN ND THIS DOCUMENT RE SUBJECT TO SPECIFIC DISCLIMERS, SET FORTH T www.vishay.com/doc?900
Z thjc - Transient Thermal Impedance ( C/W) 0. Single pulse D = 0.50 D = 0.33 D = 0.25 D = 0.7 D = 0.08 0.0 0.000 0.00 0.0 0. Square Wave Pulse Duration (s) Fig. 9 - Thermal Impedance Z thjc Characteristics Steady state value (DC operation) ORDERING INFORMTION TBLE Device code VS- 25 T T S 2 H M3 2 3 4 5 6 7 8 - product 2 - Current rating (25 = 25 ) 3 - Circuit configuration: T = single thyristor 4 - Package: 5 - T = TO-220B Type of silicon: S = standard recovery rectifier 6 - Voltage rating 2 = 200 V 7 - H = EC-Q qualified 8 - Environmental digit: M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free ORDERING INFORMTION (Example) PREFERRED P/N QUNTITY PER T/R MINIMUM ORDER QUNTITY PCKGING DESCRIPTION 50 00 ntistatic plastic tubes Dimensions Part marking information LINKS TO RELTED DOCUMENTS www.vishay.com/doc?95222 www.vishay.com/doc?95028 Revision: 04-Jun-208 5 Document Number: 96530 For technical questions within your region: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHNGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN ND THIS DOCUMENT RE SUBJECT TO SPECIFIC DISCLIMERS, SET FORTH T www.vishay.com/doc?900
Outline Dimensions TO-220B DIMENSIONS in millimeters and inches (6) E E2 (7) P 0.04 M B M B Seating plane (E) Thermal pad (6) D Q 2 3 (6) (H) D D H (7) C C D2 (6) Detail B L (2) D 3 x b 3 x b2 3 2 Detail B C E (6) L Base metal (b, b2) Plating 0.05 M B M Lead tip 2 x e e c 2 Lead assignments Diodes. - node/open 2. - Cathode 3. - node View - c c (4) (4) b, b3 Section C - C and D - D Conforms to JEDEC outline TO-220B SYMBOL MILLIMETERS INCHES MILLIMETERS INCHES NOTES SYMBOL MIN. MX. MIN. MX. MIN. MX. MIN. MX. NOTES 4.25 4.65 0.67 0.83 E..5 0.398 0.44 3, 6.4.40 0.045 0.055 E 6.86 8.89 0.270 0.350 6 2 2.56 2.92 0. 0.5 E2-0.76-0.030 7 b 0.69.0 0.027 0.040 e 2.4 2.67 0.095 0.5 b 0.38 0.97 0.05 0.038 4 e 4.88 5.28 0.92 0.208 b2.20.73 0.047 0.068 H 6.09 6.48 0.240 0.255 6, 7 b3.4.73 0.045 0.068 4 L 3.52 4.02 0.532 0.552 c 0.36 0.6 0.04 0.024 L 3.32 3.82 0.3 0.50 2 c 0.36 0.56 0.04 0.022 4 P 3.54 3.73 0.39 0.47 D 4.85 5.25 0.585 0.600 3 Q 2.60 3.00 0.2 0.8 D 8.38 9.02 0.330 0.355 to 93 to 93 D2.68 2.88 0.460 0.507 6 Notes () Dimensioning and tolerancing as per SME Y4.5M-994 (2) Lead dimension and finish uncontrolled in L (3) Dimension D, D and E do not include mold flash. Mold flash shall not exceed 0.27 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body (4) Dimension b, b3 and c apply to base metal only (5) Controlling dimensions: inches (6) Thermal pad contour optional within dimensions E, H, D2 and E (7) Dimensions E2 x H define a zone where stamping and singulation irregularities are allowed (8) Outline conforms to JEDEC TO-220, except 2 (maximum) and D2 (minimum) where dimensions are derived from the actual package outline Document Number: 95222 For technical questions within your region, please contact one of the following: www.vishay.com Revision: 08-Mar- Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com
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