ECE145a / 218a Bilateral Tuned Amplifier Design

Size: px
Start display at page:

Download "ECE145a / 218a Bilateral Tuned Amplifier Design"

Transcription

1 class notes, M. odwell, copyrighted 9 ECE145a / 8a Bilateral Tuned Amplifier Design Mark odwell University of California, anta Barbara rodwell@ece.ucsb.edu , fax

2 tability class notes, M. odwell, copyrighted 9 Unconditio nally stable if in 1 for all Equivalent ly : unconditionally stable if possible out L. 1 for all possible. A - port is 1) and a) b) 1- K An alternative B unconditionally stable if - 11 nd the condition is that thestability measure B ollet stability factor K 1, where 1 be positive, where

3 Potentially Unstable Amplifier class notes, M. odwell, copyrighted 9 ource stability circle Load stability circle - plane L - plane 11 1 out 1 1 in 1 This is a test at one specific frequency; must test at all frequencie s.

4 Unconditionally stable Amplifier class notes, M. odwell, copyrighted 9 ource stability circle Load stability circle - plane L - plane out in 1 This is a test at one specific frequency; must test at all frequencie s.

5 Why Might MA Not Exist? class notes, M. odwell, copyrighted 9 If the network is then by placing weforce out 1. potentially unstable, L within theload stability circle, The device then has negative input resistance. Appropriate choice will If of then cause oscillation. we adjust and the highest possiblegain, source impedance to obtain we will instead obtain infinite gain L (oscillation). Load stability circle 11 L L - plane The maximum available gain is infinite. This is *not *good.

6 Computing Maximum Available ain class notes, M. odwell, copyrighted 9 max P P AVA in wenow need iff PAVA Pload and Pin PAV L * out and s P P * in load AV T we must simultaneously solve in 11 L 1 L * and out 1 11 * L and then substituteinto T 1 1 in s s 1 1 L L The calculatio ns are long, and will not be shown.

7 Maximum Available ain class notes, M. odwell, copyrighted 9 max K K 1 where K (ollet stability factor). Notethat i.e. max K 1and B is only defined 1. for an unconditionally stable network,

8 class notes, M. odwell, copyrighted 9 tabilization: if device is potentially unstable - plane Adding series resistance stab as shownconstains Z gen tolie within stable region.

9 class notes, M. odwell, copyrighted 9 tabilization: if device is potentially unstable - plane If we include stab thestability cirle in the - port being simulated in the CAD software, moves outwardsas shown..

10 4 Obvious tabilization Methods class notes, M. odwell, copyrighted 9 - plane L - plane iven thesestability circles, four stabilization methodsare immediately apparent.

11 eries tabilization On Input class notes, M. odwell, copyrighted 9 - plane

12 hunt tabilization On Input class notes, M. odwell, copyrighted 9 - plane

13 eries tabilization On Output class notes, M. odwell, copyrighted 9 L - plane

14 hunt tabilization On Output class notes, M. odwell, copyrighted 9 L - plane

15 What ain Do We et After tabilization? class notes, M. odwell, copyrighted 9 Before stabilization After stabilizat ion * original *- parameters : ij *changed *- parameters : ij max K K 1 undefined (unstable) max stable max stable but K K K 1(just stable) 1 How do and compare to and?

16 Consider First The tabilization Network class notes, M. odwell, copyrighted 9 *stabilizer *- parameters : ij 11 ij *stabilizer *- parameters : ij 11 ij 11 ( ( stab stab Z Z ) ) Z Z 11 ( ( stab stab Y Y ) Y ) Y stab Z Z stab Y Y Key point is reciprocity : and

17 What ain Do We et After tabilization? class notes, M. odwell, copyrighted 9 T ij : transistor - parameters ij ij ij : stabilizer - parameters : stabilized transistor - parameters by inspection(mason's gain rules) : ij T ij b a 1 1 T T 1 b a 1 1 T T 1 T T T T!!!

18 Consider More Carefully class notes, M. odwell, copyrighted 9 Any cascaded T T blocks follow this relationship : ij Passive reciprocal 1 networksfollow this relationship : ij T ij We therefore find : T T tabilizin g does not change theratio of to.

19 What ain Do We et After tabilization? class notes, M. odwell, copyrighted 9 Before stabilization After stabilizat ion * original *- parameters : ij *changed *- parameters : ij max K K 1 undefined (unstable) max max_ stable K K 1 but K 1(just stable) and / / Maximum stable gain max_ stable

20 class notes, M. odwell, copyrighted 9 What Does Maximum table ain Mean??? The term :"Maximum stable gain" is tooshort tobe precise. M aximum stable gain is the maximum gain we can *if * we also guarantee that changing Z and Z L will not make the amplfier oscillate. obtain

21 Design Tools: Power ain Definitions class notes, M. odwell, copyrighted 9 Transducer ain Available ain Insertion ain Z s ij Z s ij Z s =Z o ij Z L =Z o Vgen Z L Vgen Z L =Z out * Vgen T P load / Pav, gen load power power available from generator general - case gain A P gain av, a / Pav, gen power available from amplifier power available from generator with output matched P av, a / Pav, gen power delivered to Zo load power available from Z generator gain in a 5 Ohm enviroment o P Operating ain P Z s =Z in * Vgen gain ij load / Pgen, delivered with input matched Z L load power power delivered from generator Maximum Available ain After impedance-matching: ij,matched Z s =Z Z o s =Z in * ij Z L =Z o match ij,raw match Z L =Z out * Vgen Vgen Max Pav, a / Pgen, delivered power available from amplifier power delivered from generator gain with both portsmatched, matched 11, matched max,raw, matched...mamay not exist......but only if unconditionally stable...

22 M/MA, db Unilateral Power ain class notes, M. odwell, copyrighted 9 1) Cancel device feedback w ith external lossless feedback 4 11 ) Matchinput and output esulting power gain is Mason's Unilateral ain U Y Y Y M onolithicamplifiers are not easily made unilateral U mostly of For simple BJT model, U rolls off U useful for extrapolation to find In III - V FETs, U shows peak from U hard to use for For bulk CMO, C ds U should be OK for historical relevance f max at - db/decade - - extrapolation is sheilded by substrate f max C ds s extrapolation to IC design f max d interaction 3 U 5 15 Common emitter Common base 1 Common Collector Frequency, Hz

23 class notes, M. odwell, copyrighted 9 Design Tools: tability Factors, tability Circles in L out 1 L 1 11 L 11 K ollet stability factor 1 11 det Load tability Circle ource tability Circle and B stability measure Unconditionally stable (stable with all 1 11, L if : det 1 Values of in L which make 1 beyond lies negative in Values of out which make 1 beyond lies negative out Negative port impedance negative- oscillator Tuning for highest gain infinite gain (oscillation)

24 Design Tools: Maximum table ain class notes, M. odwell, copyrighted 9 M aximum stable gain M Y Y Z Z circles at 5 Hz 17 circle stabilization methods 17 ij ij 5 ij ij 75 M results 5-1 MA 5 Hz Adding series/shunt resistance excludes source or load from unstable regions stabilizes

25 class notes, M. odwell, copyrighted 9 Design Procedure: imple ain-matched Amplifier _tabcircle1 First: stabilize at the design frequency ---device is potentially unstable at 1 Hz design frequency source stability circle: 5 Ohm on input will overstabilize the device indep(_tabcircle1) (. to 51.) After stabilizing (slightly over-stabilizing)

26 class notes, M. odwell, copyrighted 9 Design Procedure: imple ain-matched Amplifier econd: Determine required interface impedances The a & p circles define the source & load impedances which the transistor must see available gain operating gain...it is necessary to OVETABILIZE the device to move the a & p circles towards the mith chart center,opt L,opt Third: Design Input & Output Tuning Networks...to provide these impedances......added to device, the amplifier is not yet complete...

27 class notes, M. odwell, copyrighted 9 Design Procedure: imple ain-matched Amplifier Forth: Add out-of-band stabilization potentially unstable below 75 Hz source & load stability circles & 1,,...,1 Hz with frequency-selective series stabilization...caused only slight mistuning & slight gain 1 Hz...and is unconditionally stable above 1 Hz

28 Design Procedure: Effect of Line Losses class notes, M. odwell, copyrighted 9 Finally: adjusting for line losses high line skin effect losses reduced gain but line losses also increase stability factor loss in gain are partly recovered by reducing stabilization resistance & re-tuning the design line losses --no analytical procedure; just component tweaking line losses have severe impact...in VLI wiring environment...particularly at 5 + Hz...particularly with high-power amplifiers

29 gain, db, db Tuned Amplifier Examples class notes, M. odwell, copyrighted 9 3-stage cascode in 18 nm CMO III-V HBT small-signal amplifiers Frequency, Hz Frequency (Hz) Note: simple gain-tuned amplifiers limited applications Transmitters need power amplifiers: need output loadline-match, not gain-match eceivers need low-noise amplifiers: need input noise-match, not gain-match

Lecture 34 Amplifier Stability.

Lecture 34 Amplifier Stability. Whites, EE 481 ecture 34 Page 1 of 12 ecture 34 Amplifier tability. You ve seen in EE 322 that a simple model for a feedback oscillator has an amplifier and a feedback network connected as: Oscillation

More information

Application Note A008

Application Note A008 Microwave Oscillator Design Application Note A008 Introduction This application note describes a method of designing oscillators using small signal S-parameters. The background theory is first developed

More information

ECE145a / 218a: Notes Set 5 device models & device characteristics:

ECE145a / 218a: Notes Set 5 device models & device characteristics: ECE145a / 218a: Notes Set 5 device models & device characteristics: Mark odwell University of California, Santa Barbara rodwell@ece.ucsb.edu 805-893-3244, 805-893-3262 fax Content: Bipolar Transistor M

More information

Microwave Oscillator Design. Application Note A008

Microwave Oscillator Design. Application Note A008 Microwave Oscillator Design Application Note A008 NOTE: This publication is a reprint of a previously published Application Note and is for technical reference only. For more current information, see the

More information

JOURNAL OF INFORMATION, KNOWLEDGE AND RESEARCH IN COMMUNICATION ENGINEERING

JOURNAL OF INFORMATION, KNOWLEDGE AND RESEARCH IN COMMUNICATION ENGINEERING COMPLEXITY IN DEIGNING OF LOW NOIE AMPLIFIER Ms.PURVI ZAVERI. Asst. Professor Department Of E & C Engineering, Babariya College Of Engineering And Technology,Varnama -Baroda,Gujarat purvizaveri@yahoo.co.uk

More information

Microwave Circuits and Devices Laboratory no. 3. Low noise transistor amplifier

Microwave Circuits and Devices Laboratory no. 3. Low noise transistor amplifier 1. Choosing the right transistor Microwave Circuits and Devices aboratory no. 3 ow noise transistor amplifier Depending on the design requirements ([db] and NF[dB] @ f[hz]), the choice of a particular

More information

FACULTY OF ENGINEERING

FACULTY OF ENGINEERING FACUTY OF ENGINEEING AB HEET EMG4086 F TANITO CICUIT DEIGN TIMETE (01/013) F Amplifier Design *Note: On-the-spot evaluation may be carried out during or at the end of the experiment. tudents are advised

More information

Lecture 8. Summary of Amplifier Design Methods Specific G T and F. Transistor Biasing. Lecture 8 RF Amplifier Design

Lecture 8. Summary of Amplifier Design Methods Specific G T and F. Transistor Biasing. Lecture 8 RF Amplifier Design Lecture 8 RF Amplifier Design Johan Wernehag Electrical and Information Technology Lecture 8 Amplifier Design Summary of Design Methods Transistor Biasing Voltage and Current Drive of Bipolar Transistors

More information

915 MHz Power Amplifier. EE172 Final Project. Michael Bella

915 MHz Power Amplifier. EE172 Final Project. Michael Bella 915 MHz Power Amplifier EE17 Final Project Michael Bella Spring 011 Introduction: Radio Frequency Power amplifiers are used in a wide range of applications, and are an integral part of many daily tasks.

More information

T he noise figure of a

T he noise figure of a LNA esign Uses Series Feedback to Achieve Simultaneous Low Input VSWR and Low Noise By ale. Henkes Sony PMCA T he noise figure of a single stage transistor amplifier is a function of the impedance applied

More information

QUESTION BANK SUB. NAME: RF & MICROWAVE ENGINEERING SUB. CODE: EC 2403 BRANCH/YEAR/: ECE/IV UNIT 1 TWO PORT RF NETWORKS- CIRCUIT REPRESENTATION

QUESTION BANK SUB. NAME: RF & MICROWAVE ENGINEERING SUB. CODE: EC 2403 BRANCH/YEAR/: ECE/IV UNIT 1 TWO PORT RF NETWORKS- CIRCUIT REPRESENTATION QUESTION BANK SUB. NAME: RF & MICROWAVE ENGINEERING SUB. CODE: EC 2403 SEM: VII BRANCH/YEAR/: ECE/IV UNIT 1 TWO PORT RF NETWORKS- CIRCUIT REPRESENTATION 1. What is RF? 2. What is an RF tuner? 3. Define

More information

RFIC DESIGN ELEN 351 Session4

RFIC DESIGN ELEN 351 Session4 RFIC DESIGN ELEN 351 Session4 Dr. Allen Sweet January 29, 2003 Copy right 2003 ELEN 351 1 Power Amplifier Classes Indicate Efficiency and Linearity Class A: Most linear, max efficiency is 50% Class AB:

More information

Case Study Amp2: Wideband Amplifier Design. Case Study: Amp2 Wideband Amplifier Design Using the Negative Image Model.

Case Study Amp2: Wideband Amplifier Design. Case Study: Amp2 Wideband Amplifier Design Using the Negative Image Model. MICROWAVE AND RF DEIGN Case tudy: Amp Wideband Amplifier Design Using the Negative Image Model Presented by Michael teer Reading: Chapter 18, ection 18. Index: CAmp Based on material in Microwave and RF

More information

856 Feedback Networks: Theory and Circuit Applications. Butterworth MFM response, 767 Butterworth response, 767

856 Feedback Networks: Theory and Circuit Applications. Butterworth MFM response, 767 Butterworth response, 767 Index I/O transfer admittance, 448 N stage cascade, 732, 734 S-parameter characterization, 226 ω max, 204 π-type, 148 π-type network model, 137 c-parameter, 151, 153 c-parameter matrix, 154 g-parameter

More information

Application Note SAW-Components

Application Note SAW-Components Application Note SAW-Components Comparison between negative impedance oscillator (Colpitz oscillator) and feedback oscillator (Pierce structure) App.: Note #13 Author: Alexander Glas EPCOS AG Updated:

More information

Application Note SAW-Components

Application Note SAW-Components Application Note SAW-Components Fundamentals of a SAWR stabilised Pierce oscillator. Schematic and PCB layout for a SAWR stabilised oscillator working at 915MHz and at 868.3MHz. App. Note #21 Author: Alexander

More information

Lecture 8. RF Amplifier Design. Johan Wernehag Electrical and Information Technology. Johan Wernehag, EIT

Lecture 8. RF Amplifier Design. Johan Wernehag Electrical and Information Technology. Johan Wernehag, EIT Lecture 8 RF Amplifier Design Johan Wernehag Electrical and nformation Technology Lecture 8 Amplifier Design Summary of Design Methods Transistor Biasing Voltage and Current Drive of Bipolar Transistors

More information

ECEN 5014, Spring 2009 Special Topics: Active Microwave Circuits Zoya Popovic, University of Colorado, Boulder

ECEN 5014, Spring 2009 Special Topics: Active Microwave Circuits Zoya Popovic, University of Colorado, Boulder ECEN 5014, Spring 2009 Special Topics: Active Microwave Circuits Zoya opovic, University of Colorado, Boulder LECTURE 3 MICROWAVE AMLIFIERS: INTRODUCTION L3.1. TRANSISTORS AS BILATERAL MULTIORTS Transistor

More information

Case Study Amp1: Block diagram of an RF amplifier including biasing networks. Design Specifications. Case Study: Amp1

Case Study Amp1: Block diagram of an RF amplifier including biasing networks. Design Specifications. Case Study: Amp1 MIROWAVE AND RF DEIGN MIROWAVE AND RF DEIGN ase tudy: Amp1 Narrowband Linear Amplifier Design Presented by Michael teer ase tudy Amp1: Narrowband Linear Amplifier Design Design of a stable 8 GHz phemt

More information

Linear Regulators: Theory of Operation and Compensation

Linear Regulators: Theory of Operation and Compensation Linear Regulators: Theory of Operation and Compensation Introduction The explosive proliferation of battery powered equipment in the past decade has created unique requirements for a voltage regulator

More information

Code No: R Set No. 1

Code No: R Set No. 1 Code No: R059210404 Set No. 1 II B.Tech I Semester Supplimentary Examinations, February 2008 ELECTRONIC CIRCUIT ANALYSIS ( Common to Electronics & Communication Engineering and Electronics & Telematics)

More information

EE4101E: RF Communications. Low Noise Amplifier Design Using ADS (Report)

EE4101E: RF Communications. Low Noise Amplifier Design Using ADS (Report) EE4101E: RF Communications Low Noise Amplifier Design Using ADS (Report) SEM 1: 2014/2015 Student 1 Name Student 2 Name : Ei Ei Khin (A0103801Y) : Kyaw Soe Hein (A0103612Y) Page 1 of 29 INTRODUCTION The

More information

A 3-Stage Shunt-Feedback Op-Amp having 19.2dB Gain, 54.1dBm OIP3 (2GHz), and 252 OIP3/P DC Ratio

A 3-Stage Shunt-Feedback Op-Amp having 19.2dB Gain, 54.1dBm OIP3 (2GHz), and 252 OIP3/P DC Ratio International Microwave Symposium 2011 Chart 1 A 3-Stage Shunt-Feedback Op-Amp having 19.2dB Gain, 54.1dBm OIP3 (2GHz), and 252 OIP3/P DC Ratio Zach Griffith, M. Urteaga, R. Pierson, P. Rowell, M. Rodwell,

More information

Practical RF Circuit Design for Modern Wireless Systems

Practical RF Circuit Design for Modern Wireless Systems Practical RF Circuit Design for Modern Wireless Systems Volume II Active Circuits and Systems Rowan Gilmore Les Besser Artech House Boston " London www.artechhouse.com Contents Preface Acknowledgments

More information

. From the above data, determine the network is symmetric or not.

. From the above data, determine the network is symmetric or not. Velammal College of Engineering and Technology, Madurai Department of Electronics and Communication Engineering Question Bank Subject Name: EC2353 Antennas And Wave Propagation Faculty: Mrs G VShirley

More information

Code: 9A Answer any FIVE questions All questions carry equal marks *****

Code: 9A Answer any FIVE questions All questions carry equal marks ***** II B. Tech II Semester (R09) Regular & Supplementary Examinations, April/May 2012 ELECTRONIC CIRCUIT ANALYSIS (Common to EIE, E. Con. E & ECE) Time: 3 hours Max Marks: 70 Answer any FIVE questions All

More information

Microwave Circuit Analysis and Amplifier Design

Microwave Circuit Analysis and Amplifier Design Microwave Circuit Analysis and Amplifier Design SAMUEL Y. LIAO Professor of Electrical Engineering California State University, Fresno PRENTICE-HALL, INC., Englewood Cliffs, New Jersey 07632 Contents PREFACE

More information

Pg: 1 VALLIAMMAI ENGINEERING COLLEGE SRM Nagar, Kattankulathur 603 203 Department of Electronics & Communication Engineering Regulation: 2013 Acadamic Year : 2015 2016 EC6304 Electronic Circuits I Question

More information

MAHALAKSHMI ENGINEERING COLLEGE TIRUCHIRAPALLI UNIT III TUNED AMPLIFIERS PART A (2 Marks)

MAHALAKSHMI ENGINEERING COLLEGE TIRUCHIRAPALLI UNIT III TUNED AMPLIFIERS PART A (2 Marks) MAHALAKSHMI ENGINEERING COLLEGE TIRUCHIRAPALLI-621213. UNIT III TUNED AMPLIFIERS PART A (2 Marks) 1. What is meant by tuned amplifiers? Tuned amplifiers are amplifiers that are designed to reject a certain

More information

Current Mirrors. Basic BJT Current Mirror. Current mirrors are basic building blocks of analog design. Figure shows the basic NPN current mirror.

Current Mirrors. Basic BJT Current Mirror. Current mirrors are basic building blocks of analog design. Figure shows the basic NPN current mirror. Current Mirrors Basic BJT Current Mirror Current mirrors are basic building blocks of analog design. Figure shows the basic NPN current mirror. For its analysis, we assume identical transistors and neglect

More information

Microwave Devices and Circuit Design

Microwave Devices and Circuit Design Microwave Devices and Circuit Design Ganesh Prasad Srivastava Vijay Laxmi Gupta MICROWAVE DEVICES and CIRCUIT DESIGN GANESH PRASAD SRIVASTAVA Professor (Retired) Department of Electronic Science University

More information

Analog and Telecommunication Electronics

Analog and Telecommunication Electronics Politecnico di Torino - ICT School Analog and Telecommunication Electronics A3 BJT Amplifiers»Biasing» Output dynamic range» Small signal analysis» Voltage gain» Frequency response 12/03/2012-1 ATLCE -

More information

GATE: Electronics MCQs (Practice Test 1 of 13)

GATE: Electronics MCQs (Practice Test 1 of 13) GATE: Electronics MCQs (Practice Test 1 of 13) 1. Removing bypass capacitor across the emitter leg resistor in a CE amplifier causes a. increase in current gain b. decrease in current gain c. increase

More information

High Intercept Low Noise Amplifier for 1.9 GHz PCS and 2.1 GHz W-CDMA Applications using the ATF Enhancement Mode PHEMT

High Intercept Low Noise Amplifier for 1.9 GHz PCS and 2.1 GHz W-CDMA Applications using the ATF Enhancement Mode PHEMT High Intercept Low Noise Amplifier for 1.9 GHz PCS and 2.1 GHz W-CDMA Applications using the ATF-55143 Enhancement Mode PHEMT Application Note 1241 Introduction Avago Technologies ATF-55143 is a low noise

More information

Low Noise Amplifier for 3.5 GHz using the Avago ATF Low Noise PHEMT. Application Note 1271

Low Noise Amplifier for 3.5 GHz using the Avago ATF Low Noise PHEMT. Application Note 1271 Low Noise Amplifier for 3. GHz using the Avago ATF-3143 Low Noise PHEMT Application Note 171 Introduction This application note describes a low noise amplifier for use in the 3.4 GHz to 3.8 GHz wireless

More information

BJT Circuits (MCQs of Moderate Complexity)

BJT Circuits (MCQs of Moderate Complexity) BJT Circuits (MCQs of Moderate Complexity) 1. The current ib through base of a silicon npn transistor is 1+0.1 cos (1000πt) ma. At 300K, the rπ in the small signal model of the transistor is i b B C r

More information

IC design for wireless system

IC design for wireless system IC design for wireless system Lecture 6 Dr. Ahmed H. Madian Ahmed.madian@guc.edu.eg 1 outlines Introduction to mixers Mixer metrics Mixer topologies Mixer performance analysis Mixer design issues Dr. Ahmed

More information

ECE 145A / 218 C, notes set xx: Class A power amplifiers

ECE 145A / 218 C, notes set xx: Class A power amplifiers ECE 145A / 218 C, notes set xx: Class A power amplifiers Mark Rodwell University of California, Santa Barbara rodwell@ece.ucsb.edu 805-893-3244, 805-893-3262 fax Class A power amplifier: what do we mean?

More information

ATLCE - A3 01/03/2016. Analog and Telecommunication Electronics 2016 DDC 1. Politecnico di Torino - ICT School. Lesson A3: BJT Amplifiers

ATLCE - A3 01/03/2016. Analog and Telecommunication Electronics 2016 DDC 1. Politecnico di Torino - ICT School. Lesson A3: BJT Amplifiers Politecnico di Torino - ICT School Analog and Telecommunication Electronics A3 BJT Amplifiers»Biasing» Output dynamic range» Small signal analysis» ltage gain» Frequency response AY 2015-16 Biasing Output

More information

Simulation Study of Broadband LNA for Software Radio Application.

Simulation Study of Broadband LNA for Software Radio Application. Simulation Study of Broadband LNA for Software Radio Application. Yazid Mohamed, Norsheila Fisal and Mazlina Esa June 000 Telemetics and Optic Panel Faculty of Electrical Engineering University Technology

More information

A LDO PRIMER Part I: A REVIEW ON PASS ELEMENT

A LDO PRIMER Part I: A REVIEW ON PASS ELEMENT A LDO PRIMER Part I: A REVIEW ON PASS ELEMENT Qi Deng Senior Product Marketing Engineer, Analog and Interface Products Division Microchip Technology Inc. A Low Drop Out regulator (LDO) is a linear regulator

More information

UHF SiGe HBT AMPLIFIER: PARAMETERS AND NOISE CHARACTERISTICS

UHF SiGe HBT AMPLIFIER: PARAMETERS AND NOISE CHARACTERISTICS UHF SiGe HBT AMPLIFIER: PARAMETERS AND NOISE CHARACTERISTICS Mohamed Abdultawab Abdullah, Geno Yordanov Dimitrov South-West University, Street: Ivan Mihailov No: 66, Blagoevgrad, Bulgaria, Phone: +359888282766,

More information

SIDDHARTH GROUP OF INSTITUTIONS :: PUTTUR (AUTONOMOUS) Siddharth Nagar, Narayanavanam Road QUESTION BANK

SIDDHARTH GROUP OF INSTITUTIONS :: PUTTUR (AUTONOMOUS) Siddharth Nagar, Narayanavanam Road QUESTION BANK SIDDHARTH GROUP OF INSTITUTIONS :: PUTTUR (AUTONOMOUS) Siddharth Nagar, Narayanavanam Road 517583 QUESTION BANK Subject with Code : Electronic Circuit Analysis (16EC407) Year & Sem: II-B.Tech & II-Sem

More information

Chapter Three " BJT Small-Signal Analysis "

Chapter Three  BJT Small-Signal Analysis Chapter Three " BJT Small-Signal Analysis " We now begin to examine the small-signal ac response of the BJT amplifier by reviewing the models most frequently used to represent the transistor in the sinusoidal

More information

ETIN25 Analogue IC Design. Laboratory Manual Lab 2

ETIN25 Analogue IC Design. Laboratory Manual Lab 2 Department of Electrical and Information Technology LTH ETIN25 Analogue IC Design Laboratory Manual Lab 2 Jonas Lindstrand Martin Liliebladh Markus Törmänen September 2011 Laboratory 2: Design and Simulation

More information

RF Solid State Driver for Argonne Light Source

RF Solid State Driver for Argonne Light Source RF olid tate Driver for Argonne Light ource Branko Popovic Lee Teng Internship University of Iowa Goeff Waldschmidt Argonne National Laboratory Argonne, IL August 13, 2010 Abstract Currently, power to

More information

UNIT I BIASING OF DISCRETE BJT AND MOSFET PART A

UNIT I BIASING OF DISCRETE BJT AND MOSFET PART A UNIT I BIASING OF DISCRETE BJT AND MOSFET PART A 1. Why do we choose Q point at the center of the load line? 2. Name the two techniques used in the stability of the q point.explain. 3. Give the expression

More information

Main Sources of Electronic Noise

Main Sources of Electronic Noise Main Sources of Electronic Noise Thermal Noise - It is always associated to dissipation phenomena produced by currents and voltages. It is represented by a voltage or current sources randomly variable

More information

The Design of A 125W L-Band GaN Power Amplifier

The Design of A 125W L-Band GaN Power Amplifier Sheet Code RFi0613 White Paper The Design of A 125W L-Band GaN Power Amplifier This paper describes the design and evaluation of a single stage 125W L-Band GaN Power Amplifier using a low-cost packaged

More information

Page 1. Telecommunication Electronics ETLCE - A2 06/09/ DDC 1. Politecnico di Torino ICT School. Amplifiers

Page 1. Telecommunication Electronics ETLCE - A2 06/09/ DDC 1. Politecnico di Torino ICT School. Amplifiers Politecnico di Torino ICT School Amplifiers Telecommunication Electronics A2 Transistor amplifiers» Bias point and circuits,» Small signal models» Gain and bandwidth» Limits of linear analysis Op Amp amplifiers

More information

UNIT 1 MULTI STAGE AMPLIFIES

UNIT 1 MULTI STAGE AMPLIFIES UNIT 1 MULTI STAGE AMPLIFIES 1. a) Derive the equation for the overall voltage gain of a multistage amplifier in terms of the individual voltage gains. b) what are the multi-stage amplifiers? 2. Describe

More information

SRM UNIVERSITY FACULTY OF ENGINEERING AND TECHNOLOGY DEPARTMENT OF TCE COURSE PLAN. Tech Park 13 th floor

SRM UNIVERSITY FACULTY OF ENGINEERING AND TECHNOLOGY DEPARTMENT OF TCE COURSE PLAN. Tech Park 13 th floor SRM UNIVERSITY FACULTY OF ENGINEERING AND TECHNOLOGY DEPARTMENT OF TCE COURSE PLAN Course Code : TN00 Course Title : RF System Engineering Semester : II Semester Location : S.R.M.E.C Tech Park Faculty

More information

LECTURE 6 BROAD-BAND AMPLIFIERS

LECTURE 6 BROAD-BAND AMPLIFIERS ECEN 54, Spring 18 Active Microwave Circuits Zoya Popovic, University of Colorado, Boulder LECTURE 6 BROAD-BAND AMPLIFIERS The challenge in designing a broadband microwave amplifier is the fact that the

More information

Assist Lecturer: Marwa Maki. Active Filters

Assist Lecturer: Marwa Maki. Active Filters Active Filters In past lecture we noticed that the main disadvantage of Passive Filters is that the amplitude of the output signals is less than that of the input signals, i.e., the gain is never greater

More information

ECE 145A and 218A. Transmission-line properties, impedance-matching exercises

ECE 145A and 218A. Transmission-line properties, impedance-matching exercises ECE 145A and 218A. Transmission-line properties, impedance-matching exercises Problem #1 This is a circuit file to study a transmission line. The 2 resistors are included to allow easy disconnection of

More information

Chapter 2 CMOS at Millimeter Wave Frequencies

Chapter 2 CMOS at Millimeter Wave Frequencies Chapter 2 CMOS at Millimeter Wave Frequencies In the past, mm-wave integrated circuits were always designed in high-performance RF technologies due to the limited performance of the standard CMOS transistors

More information

CHAPTER 3 CMOS LOW NOISE AMPLIFIERS

CHAPTER 3 CMOS LOW NOISE AMPLIFIERS 46 CHAPTER 3 CMOS LOW NOISE AMPLIFIERS 3.1 INTRODUCTION The Low Noise Amplifier (LNA) plays an important role in the receiver design. LNA serves as the first block in the RF receiver. It is a critical

More information

PartIIILectures. Multistage Amplifiers

PartIIILectures. Multistage Amplifiers University of missan Electronic II, Second year 2015-2016 PartIIILectures Assistant Lecture: 1 Multistage and Compound Amplifiers Basic Definitions: 1- Gain of Multistage Amplifier: Fig.(1-1) A general

More information

Technology Overview. MM-Wave SiGe IC Design

Technology Overview. MM-Wave SiGe IC Design Sheet Code RFi0606 Technology Overview MM-Wave SiGe IC Design Increasing consumer demand for high data-rate wireless applications has resulted in development activity to exploit the mm-wave frequency range

More information

Bipolar Emitter-Follower: Output Pin Compensation

Bipolar Emitter-Follower: Output Pin Compensation Operational Amplifier Stability Part 9 of 15: Capacitive Load Stability: Output Pin Compensation by Tim Green Linear Applications Engineering Manager, Burr-Brown Products from Texas Instruments Part 9

More information

Advanced Regulating Pulse Width Modulators

Advanced Regulating Pulse Width Modulators Advanced Regulating Pulse Width Modulators FEATURES Complete PWM Power Control Circuitry Uncommitted Outputs for Single-ended or Push-pull Applications Low Standby Current 8mA Typical Interchangeable with

More information

Electronics Prof. D. C. Dube Department of Physics Indian Institute of Technology, Delhi

Electronics Prof. D. C. Dube Department of Physics Indian Institute of Technology, Delhi Electronics Prof. D. C. Dube Department of Physics Indian Institute of Technology, Delhi Module No # 05 FETS and MOSFETS Lecture No # 06 FET/MOSFET Amplifiers and their Analysis In the previous lecture

More information

Operational Amplifiers

Operational Amplifiers Operational Amplifiers Table of contents 1. Design 1.1. The Differential Amplifier 1.2. Level Shifter 1.3. Power Amplifier 2. Characteristics 3. The Opamp without NFB 4. Linear Amplifiers 4.1. The Non-Inverting

More information

Application Note 5379

Application Note 5379 VMMK-1225 Applications Information Application Note 5379 Introduction The Avago Technologies VMMK-1225 is a low noise enhancement mode PHEMT designed for use in low cost commercial applications in the

More information

UNIT I. Operational Amplifiers

UNIT I. Operational Amplifiers UNIT I Operational Amplifiers Operational Amplifier: The operational amplifier is a direct-coupled high gain amplifier. It is a versatile multi-terminal device that can be used to amplify dc as well as

More information

MICROWAVE ENGINEERING-II. Unit- I MICROWAVE MEASUREMENTS

MICROWAVE ENGINEERING-II. Unit- I MICROWAVE MEASUREMENTS MICROWAVE ENGINEERING-II Unit- I MICROWAVE MEASUREMENTS 1. Explain microwave power measurement. 2. Why we can not use ordinary diode and transistor in microwave detection and microwave amplification? 3.

More information

Dedication. This project is for Evelyn, whose love and encouragements keeps me going just fine.

Dedication. This project is for Evelyn, whose love and encouragements keeps me going just fine. 1 Dedication This project is for Evelyn, whose love and encouragements keeps me going just fine. 2 Acknowledgement My acknowledgements go to Dr.-Ing. Wilfred N. Mwema, for his inspiration and support.

More information

Introduction to Surface Acoustic Wave (SAW) Devices

Introduction to Surface Acoustic Wave (SAW) Devices May 31, 2018 Introduction to Surface Acoustic Wave (SAW) Devices Part 7: Basics of RF Circuits Ken-ya Hashimoto Chiba University k.hashimoto@ieee.org http://www.te.chiba-u.jp/~ken Contents Noise Figure

More information

ECE 145a / 218 a, notes set 4: Impedance Matching

ECE 145a / 218 a, notes set 4: Impedance Matching ECE 145a / 218 a, notes set 4: Impedance Matching Mark Rodwell University of California, Santa Barbara rodwell@ece.ucsb.edu 805-893-3244, 805-893-3262 fax Impedance-Matching: Goals Recall: ine Reflections

More information

Analysis and Design of a Simple Operational Amplifier

Analysis and Design of a Simple Operational Amplifier by Kenneth A. Kuhn December 26, 2004, rev. Jan. 1, 2009 Introduction The purpose of this article is to introduce the student to the internal circuits of an operational amplifier by studying the analysis

More information

EE LINEAR INTEGRATED CIRCUITS & APPLICATIONS

EE LINEAR INTEGRATED CIRCUITS & APPLICATIONS UNITII CHARACTERISTICS OF OPAMP 1. What is an opamp? List its functions. The opamp is a multi terminal device, which internally is quite complex. It is a direct coupled high gain amplifier consisting of

More information

Project 6: Oscillator Circuits

Project 6: Oscillator Circuits : Oscillator Circuits Ariel Moss The purpose of this experiment was to design two oscillator circuits: a Wien-Bridge oscillator at 3 khz oscillation and a Hartley Oscillator using a BJT at 5 khz oscillation.

More information

Simulation of GaAs phemt Ultra-Wideband Low Noise Amplifier using Cascaded, Balanced and Feedback Amplifier Techniques

Simulation of GaAs phemt Ultra-Wideband Low Noise Amplifier using Cascaded, Balanced and Feedback Amplifier Techniques 2011 International Conference on Circuits, System and Simulation IPCSIT vol.7 (2011) (2011) IACSIT Press, Singapore Simulation of GaAs phemt Ultra-Wideband Low Noise Amplifier using Cascaded, Balanced

More information

Chapter 2. Operational Amplifiers

Chapter 2. Operational Amplifiers Chapter 2. Operational Amplifiers Tong In Oh 1 Objective Terminal characteristics of the ideal op amp How to analyze op amp circuits How to use op amps to design amplifiers How to design more sophisticated

More information

Solid State Devices & Circuits. 18. Advanced Techniques

Solid State Devices & Circuits. 18. Advanced Techniques ECE 442 Solid State Devices & Circuits 18. Advanced Techniques Jose E. Schutt-Aine Electrical l&c Computer Engineering i University of Illinois jschutt@emlab.uiuc.edu 1 Darlington Configuration - Popular

More information

Γ L = Γ S =

Γ L = Γ S = TOPIC: Microwave Circuits Q.1 Determine the S parameters of two port network consisting of a series resistance R terminated at its input and output ports by the characteristic impedance Zo. Q.2 Input matching

More information

Low Power RF Transceivers

Low Power RF Transceivers Low Power RF Transceivers Mr. Zohaib Latif 1, Dr. Amir Masood Khalid 2, Mr. Uzair Saeed 3 1,3 Faculty of Computing and Engineering, Riphah International University Faisalabad, Pakistan 2 Department of

More information

Phy 335, Unit 4 Transistors and transistor circuits (part one)

Phy 335, Unit 4 Transistors and transistor circuits (part one) Mini-lecture topics (multiple lectures): Phy 335, Unit 4 Transistors and transistor circuits (part one) p-n junctions re-visited How does a bipolar transistor works; analogy with a valve Basic circuit

More information

Electrical, Electronic and Digital Principles (EEDP) Lecture 5. CE Amplifier, Coupling, and Multistage Amplifiers باسم ممدوح الحلوانى

Electrical, Electronic and Digital Principles (EEDP) Lecture 5. CE Amplifier, Coupling, and Multistage Amplifiers باسم ممدوح الحلوانى Electrical, Electronic and Digital Principles (EEDP) Lecture 5 CE Amplifier, Coupling, and Multistage Amplifiers د. باسم ممدوح الحلوانى Total Output Resistance The output resistance of any system is defined

More information

LBI-30398N. MAINTENANCE MANUAL MHz PHASE LOCK LOOP EXCITER 19D423249G1 & G2 DESCRIPTION TABLE OF CONTENTS. Page. DESCRIPTION...

LBI-30398N. MAINTENANCE MANUAL MHz PHASE LOCK LOOP EXCITER 19D423249G1 & G2 DESCRIPTION TABLE OF CONTENTS. Page. DESCRIPTION... MAINTENANCE MANUAL 138-174 MHz PHASE LOCK LOOP EXCITER 19D423249G1 & G2 LBI-30398N TABLE OF CONTENTS DESCRIPTION...Front Cover CIRCUIT ANALYSIS... 1 MODIFICATION INSTRUCTIONS... 4 PARTS LIST AND PRODUCTION

More information

EE432/532 Microwave Circuit Design II: Lab 1

EE432/532 Microwave Circuit Design II: Lab 1 1 Introduction EE432/532 Microwave Circuit Design II: Lab 1 This lab investigates the design of conditionally stable amplifiers using the technique of jointly matched terminations 2 Design pecifications

More information

Skyup's Media ELECTRONIC CIRCUIT ANALYSIS

Skyup's Media ELECTRONIC CIRCUIT ANALYSIS ELECTRONIC CIRCUIT ANALYSIS MALLAREDDY COLLEGE OF ENGINEERING AND TECHNOLOGY DEPARTMENT OF ELECTROINICS AND COMMUNICATION ENGINEERING Answer all the following questions: PART A: B.TECH II YEAR II SEMESTER

More information

LI)M '7> CRITERIA FOR DOCILE BEHAVIOR OF FEEDBACK AMPLIFIERS. EUas achus e 4is. Dooun.t; J.t A OCUNT ROOI RESEARCH LABORATORY OF ELECTRONICS

LI)M '7> CRITERIA FOR DOCILE BEHAVIOR OF FEEDBACK AMPLIFIERS. EUas achus e 4is. Dooun.t; J.t A OCUNT ROOI RESEARCH LABORATORY OF ELECTRONICS Dooun.t; J.t A OCUNT ROOI 36-412 EUas achus e 4is T S i-fcilad 1 L:,' 43 CRITERIA FOR DOCILE BEHAVIOR OF FEEDBACK AMPLIFIERS SAMUEL J. MASON LI)M I '7> TECHNICAL REPORT 258 JUNE 10, 1954 RESEARCH LABORATORY

More information

ATF-531P8 E-pHEMT GaAs FET Low Noise Amplifier Design for 800 and 900 MHz Applications. Application Note 1371

ATF-531P8 E-pHEMT GaAs FET Low Noise Amplifier Design for 800 and 900 MHz Applications. Application Note 1371 ATF-31P8 E-pHEMT GaAs FET Low Noise Amplifier Design for 8 and 9 MHz Applications Application Note 1371 Introduction A critical first step in any LNA design is the selection of the active device. Low cost

More information

Lecture 8: Power Gain/ Matching Networks

Lecture 8: Power Gain/ Matching Networks Lecture 8: Power Gain/ Matching Networks Amin Arbabian Jan M. Rabaey EE142 Fall 2010 Sept. 21 st, 2010 Announcements Postlab1 due date postponed to 28 th September HW3 is due Thursday, 23 rd September

More information

Lecture 8: More on Operational Amplifiers (Op Amps)

Lecture 8: More on Operational Amplifiers (Op Amps) Lecture 8: More on Operational mplifiers (Op mps) Input Impedance of Op mps and Op mps Using Negative Feedback: Consider a general feedback circuit as shown. ssume that the amplifier has input impedance

More information

Data Sheet. AT Up to 6 GHz Medium Power Silicon Bipolar Transistor. Description. Features. 85 Plastic Package

Data Sheet. AT Up to 6 GHz Medium Power Silicon Bipolar Transistor. Description. Features. 85 Plastic Package AT-85 Up to 6 GHz Medium Power Silicon Bipolar Transistor Data Sheet Description Avago s AT-85 is a general purpose NPN bipolar transistor that offers excellent high frequency performance. The AT-85 is

More information

Understanding Op-amp Specifications

Understanding Op-amp Specifications by Kenneth A. Kuhn Dec. 27, 2007, rev. Jan. 1, 2009 Introduction This article explains the various parameters of an operational amplifier and how to interpret the data sheet. Be aware that different manufacturers

More information

1 of 7 12/20/ :04 PM

1 of 7 12/20/ :04 PM 1 of 7 12/20/2007 11:04 PM Trusted Resource for the Working RF Engineer [ C o m p o n e n t s ] Build An E-pHEMT Low-Noise Amplifier Although often associated with power amplifiers, E-pHEMT devices are

More information

ERICSSONZ LBI-30398P. MAINTENANCE MANUAL MHz PHASE LOCKED LOOP EXCITER 19D423249G1 & G2 DESCRIPTION TABLE OF CONTENTS

ERICSSONZ LBI-30398P. MAINTENANCE MANUAL MHz PHASE LOCKED LOOP EXCITER 19D423249G1 & G2 DESCRIPTION TABLE OF CONTENTS MAINTENANCE MANUAL 138-174 MHz PHASE LOCKED LOOP EXCITER 19D423249G1 & G2 TABLE OF CONTENTS Page DESCRIPTION... Front Cover CIRCUIT ANALYSIS...1 MODIFICATION INSTRUCTIONS...4 PARTS LIST...5 PRODUCTION

More information

AE53/AC53/AT53/AE103 ELECT. DEVICES & CIRCUITS DEC 2015

AE53/AC53/AT53/AE103 ELECT. DEVICES & CIRCUITS DEC 2015 Q.2 a. By using Norton s theorem, find the current in the load resistor R L for the circuit shown in Fig.1. (8) Fig.1 IETE 1 b. Explain Z parameters and also draw an equivalent circuit of the Z parameter

More information

Feedback. Operational amplifiers invariably are incorporated within a circuit with negative feedback. Consider the inverting amplifier configuration :

Feedback. Operational amplifiers invariably are incorporated within a circuit with negative feedback. Consider the inverting amplifier configuration : Feedback Operational amplifiers invariably are incorporated within a circuit with negative feedback. Consider the inverting amplifier configuration : Vt t fz V2 1 -t `,i 2z my rtmg amplifier The "loop-gain"

More information

FET, BJT, OpAmp Guide

FET, BJT, OpAmp Guide FET, BJT, OpAmp Guide Alexandr Newberry UCSD PHYS 120 June 2018 1 FETs 1.1 What is a Field Effect Transistor? Figure 1: FET with all relevant values labelled. FET stands for Field Effect Transistor, it

More information

Pulsed IV analysis. Performing and Analyzing Pulsed Current-Voltage Measurements PULSED MEASUREMENTS. methods used for pulsed

Pulsed IV analysis. Performing and Analyzing Pulsed Current-Voltage Measurements PULSED MEASUREMENTS. methods used for pulsed From May 2004 High Frequency Electronics Copyright 2004 Summit Technical Media, LLC Performing and Analyzing Pulsed Current-Voltage Measurements By Charles P. Baylis II, Lawrence P. Dunleavy University

More information

Electronic Troubleshooting. Chapter 5 Multistage Amplifiers

Electronic Troubleshooting. Chapter 5 Multistage Amplifiers Electronic Troubleshooting Chapter 5 Multistage Amplifiers Overview When more amplification is required than can be supplied by a single stage amp A second stage is added Or more stages are added Aspects

More information

Fully integrated CMOS transmitter design considerations

Fully integrated CMOS transmitter design considerations Semiconductor Technology Fully integrated CMOS transmitter design considerations Traditionally, multiple IC chips are needed to build transmitters (Tx) used in wireless communications. The difficulty with

More information

Mirowave Transistors. GaAs FET

Mirowave Transistors. GaAs FET Mirowave Tranitor Modelg method -parameter : up to mea. freq. ŁEquivalent ckt - freq. extrapolation - phyical Y. Kwon Chap : Amplifier & Ocillator Microwave Engeerg Coure Note, oee, NU aa FET hyical tructure

More information

1 MHz to 2.7 GHz RF Gain Block AD8354

1 MHz to 2.7 GHz RF Gain Block AD8354 1 MHz to 2.7 GHz RF Gain Block AD834 FEATURES Fixed gain of 2 db Operational frequency of 1 MHz to 2.7 GHz Linear output power up to 4 dbm Input/output internally matched to Ω Temperature and power supply

More information

Concepts to be Reviewed

Concepts to be Reviewed Introductory Medical Device Prototyping Analog Circuits Part 3 Operational Amplifiers, http://saliterman.umn.edu/ Department of Biomedical Engineering, University of Minnesota Concepts to be Reviewed Operational

More information

Physics 160 Lecture 11. R. Johnson May 4, 2015

Physics 160 Lecture 11. R. Johnson May 4, 2015 Physics 160 Lecture 11 R. Johnson May 4, 2015 Two Solutions to the Miller Effect Putting a matching resistor on the collector of Q 1 would be a big mistake, as it would give no benefit and would produce

More information