JEE ELEKTRONIK KUASA

Transcription

1 UNIVERSITI SAINS MALAYSIA Peperiksaan Semester Kedua Sidang Akademik 22/23 Februari/Mac 23 JEE ELEKTRONIK KUASA Masa : 3 jam ARAHAN KEPADA CALON: Sila pastikan bahawa kertas peperiksaan ini mengandungi SEMBILAN (9) muka surat berserta Lampiran (6 mukasurat) bercetak clan ENAM (6) soalan sebelum anda memulakan peperiksaan ini. Jawab LIMA (5) soalan. Agihan markah bagi soalan diberikan disut sebelah kanan soalan berkenaan. Jawab semua soalan di dalam Bahasa Malaysia.

2 2 - [JEE 541] S1. (a) Lakarkan simbol dan ciri v-i bagi peranti berikut : (i) GTO (ii) TRIAC (iii) SIT (iv) LASCR (3%) (b) Jelaskan kawasan pengendalian selamat bagi suatu peranti semikonduktor kuasa (SOA). (2%) Satu (c) suis mempunyai ciri pensuisan seperti ditunjukkan oleh Rajah 1. Jika purata kehilangan kuasa dihadkan ke nilai maksimum pensuisan yang boleh dicapai? 6W, apakah kadar 15V TUTUP(OFF) I BUKA(ON) 1A 4Ei 6li 3g 4g Voltan Arus Rajah 1 (5%)

3 3 - PEE 541] S2. (a) Jelaskan dengan ringkas kepentingan dildt clan dvldt sebagai pelinclung dalam rekabentuk litar tiristor. (2%) (b) Huraikan kepentingan penyejukan dalam peranti semikonduktor kuasa. (2%) (c) Suatu peranti 2N6547 beroperasi dalam denyut berkala berfrekuensi 2 khz. Untuk setiap tempoh 5gs berkala iaitu masa hidup, peranti mengalami kelesapan 8W, manakala untuk tempoh selain dari masa tersebut kehilangan adalah sifar. Gunakan data dari Lampiran 1. Jika TA=75 C, Rcs=.4 C/W, Rci=1.2 C/W clan Tj=15 C maksimum, kirakan : (i) Nilai maksimum Tc yang dibenarkan (ii) Nilai RSA yang diperiukan. (3%) (d) Thiristor seperti ditunjukkan oleh Rajah 2a di HIDUPkan clan bentuk gelombang keluaran arus clan voltan ditunjukkan oleh Rajah 2b. Jika vc() = 18 V, L= 12 p,h clan C = 6fiF hitung (i) (ii) arus puncak thiristor clan tentukan berapa lama thiristor akan dihidupkan? (3%)

4 4 - [JEE 541] E Rajah 2a Im IN.. t L- T/2 Rajah 2b S3. (a) Jelaskan prinsip litar rektifier satu fasa terkawal gelombang penuh beban R dan L. (3%)

5 5 - [JEE 541] (b) Apakah kepentingan diod meroda bebas Dm dalam litar rektifier. (2%) Litar (c) rektifier seperti ditunjukkan oleh Rajah S3 dikendalikan dari punca 3 fasa sambungan Y, 28V, 6 Hz, mempunyai perintang R=2S2. Jika voltan keluaran purata yang diperlukan ialah 6% dari voltan keluaran maksimum, kira: (i) (ii) (iii) (iv) Sudut lengah a Arus rms dan arus purata beban Arus rms dan arus purata thiristor Faktor kuasa, PF. (5%) v~l. V2. -L _. 1V.. Ti.. R 2 Rajah S3

6 6 - PEE 541] S4. (a) Huraikan operasi litar pengawal ac satu fasa gabungan diod dan tiristor? (2%) (b) Pengawal voltan ac satu fasa ditunjukkan oleh Rajah S4(a). Voltan Vs=24V rms, 5 Hz dan R=192. Plotkan perubahan faktor kuasa lawan sudut lengah thiristor. (4%) Rajah S4(a) (c) Litar pengawal ac 3 fasa ditunjukkan oleh Rajah S4(b). Lakarkan bentukgelombang voltan keluaran untuk sudut picuan 6

7 7 - PEE 541 ] (4%) S5. (a) Jelaskan dengan ringkas parameter prestasi bagi inverter. (2%) (b) Jelaskan operasi litar seperti ditunjukkan oleh Rajah S5. (3%) Vs/2 Vs/2 Rajah S5

8 8 - [JEE 541] (c) Inverter dalam Rajah S5 mempunyai beban R=592, C=1p.F dan L=2mH. Frekuensi operasi inverter ialah fo=6hz dan VS=22V. Terbitkan hubungan voltan talian seketika Vab(t) dan arus ia(t) dalam sebutan siri Fourier. Tentukan. (i) (ii) (iii) Faktor harmonic THD Jumlah herotan harmonik THD Faktor herotan DF (5%) S6. (a) Jelaskan prinsip operasi pemenggal seperti ditunjukkan oleh Rajah S6(a). (3%) Vo Rajah S6(a) (b) Bagi pemenggal Buck-Boost seperti ditunjukkan oleh Rajah S6(b) terbitkan hubungan voltan dan arus untuk analisis arus berterusan. (3%)

9 9 - [JEE 541] (c) Pemenggal dalam Rajah S6(b) membekalkan 2W, 6V ke perintang R dari punca voltan 2V. Jika T=15gs dan L=5gH tentukan : (i) (iii) (iv) Nilai kitar tugas k lmin dan lmak Purata arus suis Purata arus diod (4%) Rajah S6(b)

10 LAMPIRAN [JEE 541] B.5 2N6546 MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6546 2N6547 SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS The 2N6546 and 2N6547 transistors are designed for high-voltage. high-speed, power switching in inductive circuits where fall time is critical. They are particularly suited for 115 and 22 volt lute op. erated switch-mode applications such as : ti Switching Regulators s PWM Inverters and Motor Controls to Solenoid and Relay Drivers Deflection Circuits Specification Features - High Temperature Performance Specified for : Reversed Biased SOA with Inductive Loads Switching Times with Inductive Loads Saturation Voltages Leakage Currents 15 AMPERE NPN SILICON POWER TRANSISTORS 3 and 4 VOLTS 175 WATTS Designer's Data for "Worst Case" Conditions The Designers Data Sheet permits the design of most circuits entirely from the information presented. Limit data - representing device characteristics boundaries - are given to facilitate "worst case" design..maximum RATINGS Rating Symbol 2N6546 2NS547 Unit Collector-Ematet Voltage VCEO(sus) 3 4 Vdc Collector-Emitter Voltage VCEXtsust Vdc Collector-Emitter Voltage VCEV vac Emitter Base Voltage VE8 9 Vdc Collector Current - Continuous Peak (1) Base Current - Continuous -PeAk(1) Emitter Current - Continuous -Peak(1) Total Power Dissipation p TC - 25oC TC - 1 Devote above 25oC Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS IC 1CM Is IBM IE IEM 1g Adc Adc Adc Pp Watts I 1. W1C T J.T stg -,.5,+2 oc Characteristic Symbol Max unit Thermal Resistance, Junction to Case RejC 1. ocny Maximum Lead Temperature for Soldering Purposes 1/8" from Case for 5 Seconds 'Indicates JEDEC Registered Data 111, Pulso Test. Pulse Width - 5. ma- D.IV CYa G 1%. TL 275 oc i.13.a T v o NOTES. 1 11AENSIONNG ANDTOLEAANCINGPERANSI Y14sin CONTROLLING pmen9gn INCH 3 ALL RAES ANDNOTESASSOCIATED MTN REEEI6NCED T2A OUTLINE SHALL APPLY ~ WIN 3L ` "Ifs ON s5o-1 t a o.a T Q I y p r- 1 e 177 O.OSS 7 3 is ISC t.t 78SC ~' t 92 BSC OU85C - ~ 5 e6 BSC.215BSC _ BSC O.rbSBSC K ' D 3.4, s R - X.61 '~:.5 1 LU_ I v 31M_ -i 19 O.ISI.1 CASE 1-6 TO-24AA (TO-3) STYLE I PIN t BASE 1 EMITTER CASE COLLECTOR Copyright of Motorola, Inc. Used by permission.

11 LAMPIRAN [JEE 541] B.5 2N6546 cont'd "ELECTRICAL CHARACTERISTICS (TC - 25oC unless otherwise noted.) Symbol Characteri stic Min Max Unit OFF CHARACTERISTICS (1) Collector Emitter Sustaining Voltage VCEO(sus) I IC - 1 rr A, 18 - ) _ Vdc j _ _ Collector-Emitter Sustaining Voltage VCEX(sUsI C = 8. A, Vclamp `Rated VCEX- TC ' toc) 214$ Vdc IIC - 15 A, Vc lamp = Rated VCEO - 1 V, TC =1C) _ Collector Cutoff Current ICEV madc (VCEV - Rated Value. Vae(off) Vdcl - 1 (VCEV - Rated Value, VBEloff) Vdc, TC Collector Cutoff Current (VCE - Rated ICER - 5 madc VCEV-Rarm = 5 ii, TC = toc1 Emitter Cutoff Current (VE8-9.Vdc, IC-) SECOND AAEAiennwN Second Breakdown Collector Current with base forward biased t - 1, s Inon-repetitive) fvce = 1 Vdc) ON CHARACTERISTICS 11) OC Current Gain fic - 5. Adc. VCE = 2. Vdc) (IC-1 Adc. VCE-2Vdc) Collector-EmftterSaturation Voltage (IC = 1 Adc, IS - 2. Adcl 'Indicates JEDEC Registered Data. (1) Puse Test : Pulse Width ~ 3ms. Duty Cycle - 2%. 1EB - 1 madc IS/b 2 - Adc hfe VCE(sat) (IC -ISAdc,IB-3.Adcl - 5 IIC - 1 Adc. I8-2. Adc, TC = 1C) Base-EmitterSaturation Voltage C = 1 Adc, I8-2. Adc) (IC - 1 Adc. Is - 2. Adc. TC = 1PC DYNAMIC CNAAACTCAI3TICS Current-Gain - Bandwidth Product (IC - 5 madc. VCE = 1 Vdc- ftest = 1. MHz) Output Capacitance IVCS - 1 Vdc. IE =, tress ` 1. MHz) ovitching CHARACTERISTICS Resistive Load Delay Time Rise Time VSE(sat) t.6 t.6 [~Vdc- IVCC = 25 V, IC - 1 A, td -.5 us 1 81 = A,tp-looms. tr - 1. us Storage Time Duty Cycle 4 2.%) is - 4. us Fall Time tf -.7 as Inductive Load, Clamped Storage Time (IC - 1 Alpk), Vclamp ` Rated VCEX " is, - 2. A. is - 5. vs Fall Time VSE(off) 5. Vdc, TC - 1Cf If us Typial Storage Time (IC - 1A(pk), Vclamp - Rated VCEX, A, is 2. us Fall Time ` 5. VBE(off) Vdc, TC - 25C) If.9 us Vdc IT MHz Cob rr D Copyright of Motorola, Inc. Used by permission.

12 LAMPIRAN tjee 541] 476 APPENDIX B SEMICONDUCTOR DATA B.5 2N6546 confd TYPICAL ELECTRICAL CHARACTERISTICS z n zw s W FIGURE 1 - OC CURRENT GAIN ' ~wrmawn"" 7 i iz "i ~i"" Mi"" SO 3 ~-r 2 1..".~ rs"t~i" " Oii izow"t "" "Eiil r~e "~~ "E"ron NEW -55 "C ). VCE " 2.V VCE " 1 V /i ", FIGURE 2 - COLLECTOR SATURATION REGION li mmimilillull moll Hill ON IC. COLLECTOR CURRENT LAMP) IC, COLLECTOR CURRENT LAMP) FIGURE 3 - "ON" VOLTAGE FIGURE 4- TEMPERATURE COEFFICIENTS N H W T, = 25oC ~~OEMadI111" 1" Ě N Z W W 2.s S 'APPLIES FOR ICA9 c hfe VCE - 2. V - l111"" 3 ~"-ononh's=m II " 9:i"" li11i C. COLLECTOR CURRENT (AMP) ě O.S IC, COLLECTOR CURRENT (AMP) FIGURE 5 - TURN-ON TIME FIGURE 6 - TURN-OFF TIME lo k 7. k 5. k 3, k V C " 25V IC~g tgl " 1g2 T,) " 25oC 2. k z 7c r 7 ~~muo. Soo~m=ammas~ ~~~un mousses ~mmo Wman east 3 2 ""/1111 ~""11111~~11111~ rr~ Ml s IC. COLLECTOR CURRENT IAMPI IC. COLLECTOR CURRENT (AMP)

13 . LAMPIRAN [JEE 541] APPENDIX B SEMICONDUCTOR DATA 477 B.5 2N6546 cont'd MAXIMUM RATED SAFE OPERATING AREAS FIGURE 7 - FORWARD BIAS SAFE OPERATING AREA s ZW 5 2!~~ "" ~~[Hr~!!~""~ti to naiil1b!_.._ LOH""1Riti _ 2 ě a 16 r- FIGURE 8 - REVERSE BIAS SAFE OPERATING AREA TURN OFF LOAD LINE BOUNDARY FGR 2N6547 FOR 2N65a6. VCEO AND VCEx ARE 1 VOLTS LESS c u BONDIN Wf Lt 1!t" 1.2 TNERl4AL LIMIT ).1 (SINGLE PULSE) li CURVES APPLY, BELOW RATED VCEO =_= st~a- 2NOS47.~ VCE. COLLECTOR-EMITTER VOLTAGE (VOLTS) U I VV LEXIRt" i l 9. A i I I VBEtotf) 1'5 V ( ( ( TC IOO~C VC O(susf I + VCEX(sus) 1 f I 1C VCE COLLECTOR EMITTER VOLTAGE 'VOLTS) s ca z s ě 3 d FIGURE 9 - POWER DERATING 11MR MM SECOND RREAKOOWN MMMMMY MMM OE RATING IN i MMMMIZEM MM MW MMME TC. CASE TEMPERATURE (OC) Ise 2 There are two limitations on the power handling ability of a transistor : breakdown. average junction temperature and second Safe operating area curves indicate IC-VCE limits of the transistor that must be observed for reliable opergtion : i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 7 is based on TC = 25OC ; TJ(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 1% but must be derated when TC 3 29 C. Second breakdown limitations do not derate the same as thermal limitations. Allowable current at the voltages shown on Figure 7 may be found at any case temperature by using the appropriate curve on Figure 9. TJ(pk) may be calculated from the data in Figure 1. At high case temperaturesi thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. W N z z 4 W c c z W N z OsH ~!3EtP~i ~! 3 2 a o, nw R) SINGLE PULSE 4~11.~li C 5 1 FIGURE 1 - THERMAL RESPONSE 5 1 PtOk) I1 ~ 12 DUTY CYCLE II TIME, 29JCIII :,(I) RAJC RBjC ` 1. CM7 MSic CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT II n TAPkI - TC : Ptpk1 291C,,) so loo 2 5 N L Ok

14 LAMPIRAN PEE 541 Untuk Soalan 3

15 LAMPIRAN PEE 541] Untuk Soalan 4