Filter Inductors, Toroid, Radial Leaded
|
|
|
- Meagan Harrington
- 5 years ago
- Views:
Transcription
1 TE, TD Filter Inductors, Toroid, Radial Leaded STANDARD ELECTRICAL SPECIFICATIONS (applies to core only) TE-3 TD-3 MODEL TE-4 TD-4 TE-5 TD-5 TC TEMPERATURE COEFFICIENT FEATURES Choice of encapsulated (TE) or dipped (TD) styles TD style combines low cost with excellent performance in commercial applications igh Q and wide selection of Q vs. frequency ranges in one small package. Large number of standard inductance values Compliant to RoS directive 2002/95/EC TEMPERATURE RANGE X X X TM 0 ± 0.25 % - 65 C to + 25 C X X X X X TR 50 ppm/ C (typical) - 65 C to + 25 C X X X X TW 0 % ± 0.25 % - 55 C to + 85 C X X Note () Inverse of typical temperature coefficient of polystyrene capacitor ELECTRICAL SPECIFICATIONS Tolerance: TE-3, TD-3 = ± % > 2, ± 2 % 54 μ to 2, ± 5 % < 50 μ TE-4, TD-4 = ± % > 2, ± 2 % < 2 TE-5, TD-5 = ± % > 2, ± 2 % < 2 Insulation Resistance: 0 M minimum Dielectric Strength: 0 V minimum (TE) 500 V minimum (TD) MECANICAL SPECIFICATIONS Terminal Strength: 2 pounds pull test (TE) Vibration: per MIL-T-27 (TE) Shock: per MIL-T-27 (TE) Weight: TE-3 = 5. g, TD-3 = 4.9 g typical TE-4 = 20 g, TD-4 = 7 g typical TE-5 = 53 g, TD-5 = 52 g typical TC AVAILABILITY X X X TA 0 % ± % - 55 C to + 25 C X X X X X TD 0 % ± 0. % 0 C to + 55 C X X X X X TL () + 40 ppm/ C to + ppm/ C + 85 ppm/ C to + 85 ppm/ C INDUCTANCE RANGE TC TE-3 TD-3 TE-4 TD-4 TE-5 TD-5 50 μ to 5 50 μ to 20 to 500 μ to 487 to 2 5 to 2 to 2 to 5 to 5 DIMENSIONS in inches [millimeters] TE TD A Dia. B F Dia. E D C Min. G A Dia. B C Min. F Min. Dia ± 0.25 [9.53 ± 3.8] - 55 C to + 25 C + 25 C to + 85 C X MODEL A B C D E F G TE-3 TD-3 TE-4 TD-4 TE-5 TD [7.40] [7.40].06 [26.92].06 [26.92].33 [33.78].32 [33.53] [9.78] [8.3] [2.70] [.] [8.67] [7.48] [76.20] [.60] [52.40] [0.635] [2.70] [0.83] [22.86] [0.83] [2.36] 0.25 [3.8] 0.20 [3.05] [5.59] 0.44 [3.66] [5.59] [6.35] [.43] [2.70] - MATERIAL SPECIFICATIONS Coating: vinyl (TD), non-flammable, abrasion and moisture resistant. Resists most cleaning agents (consult factory for chemicals which may be used) Standard Terminals: tinned copper (TE), stranded, tinned copper, teflon insulated (TD) Encapsulant: epoxy (TE) Gauge: TE-3 = 22 AWG, TD-3 = 26 AWG TE-4 = 20 AWG, TD-4 = 24 AWG TE-5 = 20 AWG, TD-5 = 24 AWG For technical questions, contact: magnetics@vishay.com Document Number: Revison: 04-Nov-09
2 Filter Inductors, Toroid, Radial Leaded TE, TD ORDERING INFORMATION TE-3 TR 5 ± % EB e2 MODEL Q TC INDUCTANCE INDUCTANCE PACKAGE JEDEC LEAD (Pb)-FREE TYPE VALUE TOLERANCE STANDARD GLOBAL PART NUMBER T E 3 Q 0 T R E B F MODEL Q TYPE TC PACKAGE INDUCTANCE VALUE TOL. RESISTANCE AND SELF-RESONANT FREQUENCIES (typical values) MODEL IND. R ( ) SRF (Mz) (μ) TE-3, TD TE-3, TD TE-3, TD TE-3, TD TE-3, TD TE-3, TD TE-3, TD TE-3, TD TE-3, TD TE-3, TD TE-3, TD TE-4, TD TE-4, TD TE-4, TD TE-4, TD TE-4, TD TE-4, TD TE-4, TD TE-4, TD TE-5, TD TE-5, TD TE-5, TD TE-5, TD TE-5, TD TE-5, TD TE-5, TD TE-5, TD TE-5, TD STANDARD INDUCTANCE VALUE The following standardization chart is offered for your design and ordering convenience. Each value listed is within one percent of the preceding and succeeding values shown. All decade multiples of these values, within the range shown for each model in the chart, are standard values. (Example: for a TE-3, 200 μ, 20 and 200 are all decade multiples of 2.00 and are all standard values.) Document Number: For technical questions, contact: magnetics@vishay.com Revison: 04-Nov-09 85
3 TE, TD Filter Inductors, Toroid, Radial Leaded PERFORMANCE GRAPS: INDUCTANCE VS. BIAS, INDUCTANCE VS. AC EXCITATION TE-3, TD-3 % I N D U C T A N C E C A N G E AC INDUCTOR CURRENT IN ma x INDUCTANCE IN TE-4, TD-4 0 E N G - 5 E C A - % I N D U C T A N C AC INDUCTOR CURRENT IN ma x INDUCTANCE IN TE-5, TD-5 0 N G E - 5 A % I N D U C T A N C E C AC INDUCTOR CURRENT IN ma x INDUCTANCE IN For technical questions, contact: magnetics@vishay.com Document Number: Revison: 04-Nov-09
4 Filter Inductors, Toroid, Radial Leaded TE, TD PERFORMANCE GRAPS: TYPICAL Q VS. FREQUENCY TE-3, TD-3 TE-4, TD Q µ 50 µ Q µ Q Q Document Number: For technical questions, contact: magnetics@vishay.com Revison: 04-Nov-09 87
5 TE, TD Filter Inductors, Toroid, Radial Leaded PERFORMANCE GRAPS: TYPICAL Q VS. FREQUENCY TE-5, TD MARKING - - Model - Q type - TC code - Inductance value - Inductance tolerance - Date code For technical questions, contact: magnetics@vishay.com Document Number: Revison: 04-Nov-09
6 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CANGE WITOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, Vishay ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer s technical experts. Product specifications do not expand or otherwise modify Vishay s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoS-Compliant fulfill the definitions and restrictions defined under Directive 20/65/EU of The European Parliament and of the Council of June 8, 20 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 20/65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as alogen-free follow alogen-free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC definition. We confirm that all the products identified as being compliant to IEC conform to JEDEC JS709A standards. Revision: 02-Oct-2 Document Number: 90
Metal Film Resistors, Non-Magnetic, Industrial, Precision
CMF Non-Magnetic Metal Film Resistors, Non-Magnetic, Industrial, Precision STANDARD ELECTRICAL SPECIFICATIONS GLOBAL HISTORICAL MAXIMUM WORKING VOLTAGE (1) V (1) Continuous working voltage shall be P x
50 W Power Resistor, Thick Film Technology, TO-220
50 W Power Resistor, Thick Film Technology, TO-220 FEATURES 50 W at 25 C heatsink mounted Adjusted by sand trimming Leaded or surface mount versions High power to size ratio Non inductive element Material
Single Phase Rectifier Bridge, 1.9 A
Single Phase Rectifier Bridge, 1.9 A VS- Series PRODUCT SUMMARY I O V RRM Package Circuit 1.9 A 1 V to 1 V Single phase bridge FEATURES Suitable for printed circuit board mounting Leads on standard 2.54
Metal Film Resistors, Industrial, Precision
Metal Film Resistors, Industrial, Precision FEATURES Small size - conformal coated Flame retardant epoxy coating Controlled temperature coefficient Excellent high frequency characteristics Exceptionally
Thick Film Resistor Networks, Dual-In-Line, Molded DIP
Thick Film Resistor Networks, Dual-In-Line, Molded DIP FEATURES Isolated, bussed, and dual terminator schematics available 0.160" (4.06 mm) maximum seated height and rugged, molded case construction Thick
Thick Film Resistor Networks, Dual-In-Line, Molded DIP
MDP 01,, 05 STANDARD ELECTRICAL SPECIFICATIONS POWER RATING / ELEMENT (1) RANGE NO. OF P 70 C PINS Ω W MDP 14 MDP 16 01 05 01 05 0.2 0.2 Consult factory Consult factory Notes (1) For resistor power ratings
Surface Mount Power Resistor Thick Film Technology
Surface Mount Power Resistor Thick Film Technology FEATURES AEC-Q200 qualified 20 W at 25 C case temperature Surface mounted resistor - TO-263 (D 2 PAK) style package Wide resistance range from 0.01 to
Single Phase Rectifier Bridge, 1.2 A
Single Phase Rectifier Bridge, 1.2 A FEATURES VS-1KAB-E Series Ease of assembly, installation, inventory High surge rating Compact Material categorization: For definitions of compliance please see www.vishay.com/doc?99912
Single-Line ESD Protection in SOT-23
Single-Line ESD Protection in FEATURES 3 Single-line ESD-protection device ESD-protection acc. IEC 61000-4-2 contact discharge air discharge 1 2 20421 20512 1 Space saving package AEC-Q101 qualified e3-
Single Phase Rectifier Bridge, 2 A
Single Phase Rectifier Bridge, 2 A 2KBP Series FEATURES Suitable for printed circuit board mounting Compact construction RoHS COMPLIANT D-44 PRODUCT SUMMARY I O V RRM 2 A 50 to 1000 V High surge current
Single-Line ESD Protection in SOT-23
Single-Line ESD Protection in 3 1 2 20421 MARKING (example only) XX YYY XX 20512 YYY = type code (see table below) XX = date code 20357 1 FEATURES Single-line ESD-protection device ESD-protection acc.
Power Resistor, for Mounting onto a Heatsink Thick Film Technology
Power Resistor, for Mounting onto a Heatsink Thick Film Technology FEATURES 5 W to 50 W High power rating Manufactured in cermet thick film technology, these power resistors exhibit remarkable characteristics
Surface Mounted Power Resistor Thick Film Technology
Surface Mounted Power Resistor Thick Film Technology DIMENSIONS in millimeters FEATURES AEC-Q200 qualified 25 W at 25 C case temperature Surface mounted resistor - TO-252 (DPAK) style package Wide resistance
FEATURES. Package. PARAMETER SYMBOL PB4006 PB4008 PB4010 UNIT Maximum repetitive peak reverse voltage V RRM V 40 T A = 25 C (2) 4.
Enhanced isocink+ TM Bridge Rectifiers + isocink+ ~ ~ - - ~ ~ + ~ ~ Case Style PB FEATURES UL recognition file number E32394 (QQQX2) UL 557 (see *) Enhanced high-current density single in-line package
Zener Diodes FEATURES
ZPYV9 to ZPY Zener Diodes PRIMARY CHARACTERISTICS PARAMETER VALUE UNIT FEATURES Silicon planar power Zener diodes For use in stabilizing and clipping circuits with high power rating The Zener voltages
Power Resistors for Mounting onto a Heatsink Thick Film Technology
Power Resistors for Mounting onto a Heatsink Thick Film Technology FEATURES 1% tolerance available High power rating = 200 W Wide ohmic value range = 0.046 to 1 M Non inductive Easy mounting Low thermal
Insulated Precision Wirewound Resistors Axial Leads
Insulated Precision Wirewound Resistors Axial Leads In wirewound precision resistors, the series holds a leading position in professional applications whenever an excellent stability of the ohmic value
High Voltage Glass Passivated Junction Plastic Rectifier
High Voltage Glass Passivated Junction Plastic Rectifier SUPERECTIFIER FEATURES Superectifier structure for high reliability application Cavity-free glass-passivated junction Low leakage current High forward
Glass Passivated Power Voltage-Regulating Diodes
Z4KE0A thru Z4KE200A Glass Passivated Power Voltage-Regulating Diodes DO-204AL (DO-4) FEATURES Plastic MELF package Ideal for automated placement Glass passivated chip junction Low Zener impedance Low
Photovoltaic Solar Cell Protection Schottky Rectifier
Photovoltaic Solar Cell Protection Schottky Rectifier Ultra Low V F =.3 V at I F = 5. A TMBS FEATURES Trench MOS Schottky technology Low forward voltage drop, low power losses High efficiency operation
Metal Film Resistors, Military, MIL-R Qualified, Precision, Type RN and MIL-PRF Qualified, Type RL
Metal Film Resistors, Military, Qualified, Precision, Type RN and Qualified, Type RL FEATURES Very low noise (- 40 db) Very low voltage coefficient (5 ppm/v) Controlled temperature coefficient Flame retardant
Small Signal Zener Diodes
Small Signal Zener Diodes FEATURES Zener voltage specified at 5 μa Maximum delta V Z given from μa to μa Very high stability Low noise AEC-Q qualified Material categorization: For definitions of compliance
Enhanced isocink+ Bridge Rectifiers
Enhanced isocink+ Bridge Rectifiers + ~ ~ - - ~ ~ + isocink+ Case Style BU + ~ ~ - * Tested to UL standard for safety electrically isolated semiconductor devices. UL 1557 4th edition. Dielectric tested
Low Capacitance ESD Protection Diodes for High-Speed Data Interfaces FEATURES
www.vishay.com Low Capacitance ESD Protection Diodes for High-Speed Data Interfaces 2 746 MARKING (example only) XX 2052 YYY XX Bar = cathode marking YYY = type code (see table below) XX = date code 2057
Enhanced isocink+ Bridge Rectifiers
Enhanced isocink+ Bridge Rectifiers isocink+ - ~ ~ + Case Style BU * Tested to UL standard for safety electrically isolated semiconductor devices. UL 557 th edition. Dielectric tested to maximum case,
Photovoltaic Solar Cell Protection Schottky Rectifier, 15 A
Photovoltaic Solar Cell Protection Schottky Rectifier, Cathode Anode DO-204AR PRODUCT SUMMARY Package DO-204AR I F(AV) V R 30 V, 35 V, 40 V, 45 V V F at I F 0.48 V I RM max. 70 ma at 125 C T J max. 150
N-Channel 25 V (D-S) MOSFET
N-Channel 25 V (D-S) MOSFET DESCRIPTION The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the
Single Phase Bridge (Power Modules), 25/35 A
MB Series MB Single Phase Bridge FEATURES Universal, 3 way terminals: Push-on, wrap around or solder High thermal conductivity package, electrically insulated case Center hole fixing Excellent power/volume
VS-11DQ05, VS-11DQ05-M3, VS-11DQ06, VS-11DQ06-M3 Schottky Rectifier, 1.1 A
Schottky Rectifier, 1.1 A Cathode Anode DO-204AL PRODUCT SUMMARY Package DO-204AL (DO-41) I F(AV) 1.1 A V R 50 V, 60 V V F at I F See Electrical table I RM max. 11.0 ma at 125 C T J max. 150 C Diode variation
4-Channel EMI-Filter with ESD-Protection FEATURES VEMI45AA-HNH VEMI45AA-HNH-GS MOLDING COMPOUND FLAMMABILITY RATING
4-Channel EMI-Filter with ESD-Protection 2383 8 7 6 5 9 1 2 3 4 MARKING (example only) Dot = pin 1 marking Y = type code (see table below) XX = date code 2522 YXX 2719 FEATURES Ultra compact LLP1713-9L
Schottky Rectifier, 2 A
Schottky Rectifier, 2 A Cathode Anode DO-204AL PRODUCT SUMMARY Package DO-204AL (DO-4) I F(AV) 2 A V R 60 V V F at I F 0.55 V I RM max. 0 ma at 25 C T J max. 50 C Diode variation Single die E AS 4.0 mj
Three Phase Bridge (Power Modules), 25 A to 35 A
Three Phase Bridge (Power Modules), 25 A to 35 A D-63 PRODUCT SUMMARY I O 25 A to 35 A V RRM V to 6 V Package D-63 Circuit Three phase bridge FEATURES Universal, 3 way terminals: push-on, wrap around or
Schottky Rectifier, 9 A
Schottky Rectifier, 9 A Cathode Anode DO-204AR PRODUCT SUMMARY Package DO-204AR I F(AV) 9 A V R 30 V, 35 V, 40 V, 45 V V F at I F 0.42 V I RM max. 70 ma at 25 C T J max. 50 C Diode variation Single die
Silicon PIN Photodiode, RoHS Compliant
BPW83 DESCRIPTION 94 8490 BPW83 is a PIN photodiode with high speed and high radiant sensitivity in a black, side view plastic package with daylight blocking filter. Filter bandwidth is matched with 870
Zener Diodes FEATURES
ZPYV9 to ZPY Zener Diodes PRIMARY CHARACTERISTICS PARAMETER VALUE UNIT FEATURES Silicon planar power Zener diodes For use in stabilizing and clipping circuits with high power rating The Zener voltages
Dual Common-Cathode Ultrafast Recovery Rectifier
New Product UH0FCT& UHB0FCT Dual Common-Cathode Ultrafast Recovery Rectifier FEATURES Oxide planar chip junction TO-0AB TO-63AB Ultrafast recovery times Soft recovery characteristics Low switching losses,
Infrared Emitting Diode, 950 nm, GaAs
Infrared Emitting Diode, 95 nm, CQY37N DESCRIPTION 94 8638-2 CQY37N is an infrared, 95 nm emitting diode in technology molded in a miniature, clear plastic package with lens. FEATURES Package type: leaded
P-Channel 8 V (D-S) MOSFET
SPICE Device Model Si235CDS P-Channel 8 V (D-S) MOSFET DESCRIPTION The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted
2-Channel EMI-Filter with ESD-Protection
2-Channel EMI-Filter with 9499 6 5 4 2 3 MARKING (example only) XX YY Dot = pin marking YY = type code (see table below) XX = date code 9957 2 FEATURES Ultra compact LLP75-6A package 2-channel EMI-filter
Low Profile, High Current IHLP Inductors
IHP-77MZ-5A ow Profile, High Current IHP Inductors Manufactured under one or more of the following: US Patents; 6,19,375/6,,7/6,9,9/6,6,. Several foreign patents, and other patents pending. STANDARD EECTRICA
ESD-Protection Diode in LLP1006-2L
VESD5A1A-HD1 ESD-Protection Diode in LLP16-2L 2855 MARKING (example only) XY Bar = cathode marking X = date code Y = type code (see table below) 2 1 21121 2856 FEATURES Ultra compact LLP16-2L package Low
Silicon PIN Photodiode, RoHS Compliant
Silicon PIN Photodiode, RoHS Compliant DESCRIPTION 948642 is a high sensitive silicon planar photodiode in a standard TO-18 hermetically sealed metal case with a glass lens. A precise alignment of the
Aluminum Capacitors Little-Lytic Electrolytics
Aluminum Capacitors Little-Lytic Electrolytics QUICK REFERENCE DATA DESCRIPTION VALUE Operating temperature -40 C to +105 C Tolerance on C R G = + 75 %, - 10 % and F = + 50 %, - 10 % Ripple current Life
Small Signal Fast Switching Diode
N45WS-G Small Signal Fast Switching Diode MECHANICAL DATA Case: SOD-323 Weight: approx. 4 mg Packaging codes/options: 8/K per 3" reel (8 mm tape), K/box 8/3K per 7" reel (8 mm tape), 5K/box FEATURES Silicon
Fully Sealed Potentiometer Military and Professional Grade
PE0 Fully Sealed Potentiometer Military and Professional Grade DIMENSIONS in millimeters (inches) ± 0.5 mm (± 0.02") FEATURES High power rating W at 70 C Low temperature coefficient (150 ppm/ C typical)
SA5.0A thru SA170CA. TRANSZORB Transient Voltage Suppressors. Vishay General Semiconductor. FEATURES PRIMARY CHARACTERISTICS
TRANSZORB Transient Voltage Suppressors DO-204AC (DO-15) PRIMARY CHARACTERISTICS V WM 5.0 V to 170 V V BR (uni-directional) 6.4 V to 209 V V BR (bi-directional) 6.4 V to 209 V P PPM 500 W P D 3.0 W I FSM
Silicon PIN Photodiode
BPV Silicon PIN Photodiode DESCRIPTION 94 8390 BPV is a PIN photodiode with high speed and high radiant sensitivity in clear, T-¾ plastic package. It is sensitive to visible and near infrared radiation.
High Intensity Red Low Current 7-Segment Display
TDSR5, TDSR6 High Intensity Red Low Current 7-Segment Display 9236 DESCRIPTION This series defines a new standard for low current displays. It is a single digit 7-segment LED display utilizing AllnGaP
High Efficiency LED in Ø 3 mm Tinted Diffused Package
TLHY44KL2 High Efficiency LED in Ø 3 mm Tinted Diffused Package DESCRIPTION 922 The TLHY44KL2 series was developed for standard applications like general indicating and lighting purposes. It is housed
Dual Common-Cathode Schottky Rectifier
Dual Common-Cathode Schottky Rectifier TO-220AB MBR25xxCT PIN 3 CASE 2 3 TO-263AB ITO-220AB 2 3 MBRF25xxCT PIN 3 FEATURES Guardring for overvoltage protection Lower power losses, high efficiency Low forward
Metal Film Resistors, Non-Magnetic, Industrial, Precision
CMF Non-Magnetic Metal Film Resistors, Non-Magnetic, Industrial, Precision STANDARD ELECTRICAL SPECIFICATIONS GLOBAL HISTORICAL MAXIMUM WORKING VOLTAGE (1) V (1) Continuous working voltage shall be P x
AC Line Rated Ceramic Disc Capacitors Class X1, 440 V AC, Class Y2, 300 V AC
AC Line Rated Ceramic Disc Capacitors Class X1, 440 V AC, Class Y2, 300 V AC EATURES Complying with IEC 60384-14 4 th edition High reliability Vertical (inline) kinked or straight leads Singlelayer AC
Schottky Rectifier, 440 A
TO-244 PRODUCT SUMMARY I F(AV) V R Lug terminal anode Base common cathode 44 A 3 V Lug terminal anode 2 FEATURES 5 C operation Center tap module Very low forward voltage drop High frequency operation Guard
Silicon PIN Photodiode
BPVNF Silicon PIN Photodiode DESCRIPTION 640- BPVNF is a PIN photodiode with high speed and high radiant sensitivity in black, T-¾ plastic package with daylight blocking filter. Filter bandwidth is matched
High Efficiency Blue LED, Ø 5 mm Untinted Non-Diffused Package
TLHB51, TLHB512 High Efficiency Blue LED, Ø 5 mm Untinted Non-Diffused Package DESCRIPTION 19223 This device has been designed in GaN on SiC technology to meet the increasing demand for high efficiency
Resistor LED for 12 V Supply Voltage
TLRH44.CU, TLRO44.CU, TLRY44.CU, TLRG44.CU, TLRP44.CU Resistor LED for 12 V Supply Voltage V S DESCRIPTION 19228-2 Out 19228-1 These devices are developed for the automotive industry and other industries
Three Phase Bridge, 130 A to 160 A (Power Modules)
Three Phase Bridge, 3 A to 6 A (Power Modules) VS-3-6MT..KPbF Series PRODUCT SUMMARY I O V RRM Package Circuit MTK 3 A to 6 A 8 V to 6 V MT-K Three phase bridge FEATURES Package fully compatible with the
Lower Voltage Ceramic Singlelayer DC Disc Capacitors 1 kv DC to 3 kv DC Low Dissipation Factor
Lower Voltage Ceramic Singlelayer DC Disc Capacitors 1 kv DC to 3 kv DC Low Dissipation Factor FEATURES Low losses High stability Low DF minimizes self heating at HF Ideal for high switching to khz Radial
High Power Infrared Emitting Diode, 850 nm, Surface Emitter Technology
High Power Infrared Emitting Diode, 850 nm, Surface Emitter Technology DESCRIPTION As part of the SurfLight TM portfolio, the is an infrared, 850 nm emitting diode based on surface emitter technology with
Schottky Rectifier, 3.0 A
Schottky Rectifier, 3.0 A VS-30BQ040PbF Vishay High Power Products SMC Cathode Anode FEATURES Small foot print, surface mountable Very low forward voltage drop High frequency operation Guard ring for enhanced
VJ 3505 UHF Chip Antenna for Mobile Devices
VJ 355 VJ 355 UHF Chip Antenna for Mobile Devices The company s products are covered by one or more of the following: WO2825262 (A1), US283372 (A1), US283575 (A1), WO28154173 (A1). Other patents pending.
Resistor LED for 12 V Supply Voltage
Resistor LED for 12 V Supply Voltage V S 19228-2 Out 19228-1 FEATURES With current limiting resistor for 12 V Cost effective: save space and resistor cost Standard Ø 3 mm (T-1) package High luminous intensity
Dual Common Cathode Schottky Rectifier
Dual Common Cathode Schottky Rectifier TO-220AB MBR20xxCT PIN PIN 3 CASE 2 3 ITO-220AB 2 3 MBRF20xxCT PIN PIN 3 2 FEATURES Power pack Guardring for overvoltage protection Low power loss, high efficiency
Hyperfast Rectifier, 2 x 5 A FRED Pt
Hyperfast Rectifier, 2 x 5 A FRED Pt VS-CSH02HM3 K TO-277A (SMPC) 2 K Cathode Anode Anode 2 FEATURES Hyperfast recovery time, reduced Q rr, and soft recovery 75 C maximum operating junction temperature
Schottky Rectifier, 1.0 A
VS-BQ15PbF Schottky Rectifier, 1. A Cathode Anode SMB PRODUCT SUMMARY Package SMB (DO-214AA) I F(AV) 1 A V R 15 V V F at I F.32 V I RM 12 ma at C T J max. 125 C Diode variation Single die E AS 1 mj FEATURES
High Intensity Red Low Current 7-Segment Display
TDSR50, TDSR60 High Intensity Red Low Current 7-Segment Display 19236 DESCRIPTION This series defines a new standard for low current displays. It is a single digit 7-segment LED display utilizing AllnGaP
Dual N-Channel 20 V (D-S) MOSFET
Si9EDH Dual N-Channel V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) SOT-6 SC-7 (6-LEADS).8 at V GS =. V.8.6 at V GS =. V.. at V GS =.8 V. FEATURES Halogen-free According to IEC 69-- Definition
High Frequency (up to 20 GHz) Resistor, Thin Film Surface Mount Chip
High Frequency (up to 20 GHz) Resistor, Thin Film Surface Mount Chip series chip resistors are designed with low internal reactance. They function as almost pure resistors on a very high range of frequencies.
Ceramic Disc Capacitors Class 2, 500 V DC, 1 kv DC, General Purpose
Ceramic Disc Capacitors Class 2, 500 V DC, 1 kv DC, General Purpose FEATURES High capacitance in small size Kinked (preferred) or straight leads Compliant to RoHS Directive 2011/65/EU APPLICATIONS Bypassing
Fast Avalanche SMD Rectifier
BYG2K-E3/HE3, BYG2M-E3/HE3 Fast Avalanche SMD Rectifier DO-24AC (SMA) FEATURES Low profile package Ideal for automated placement Glass passivated pallet chip junction Low reverse current Soft recovery
Ultrafast Avalanche SMD Rectifier
Ultrafast Avalanche SMD Rectifier DO-24AC (SMA) FEATURES Low profile package Ideal for automated placement Glass passivated pallet chip junction Low reverse current Low forward voltage Soft recovery characteristic
Silicon PIN Photodiode
Silicon PIN Photodiode DESCRIPTION is a silicon PIN photodiode with high radiant sensitivity in clear, T-1 plastic package. It is sensitive to visible and near infrared radiation. FEATURES Package type:
High Performance Schottky Rectifier, 240 A
High Performance Schottky Rectifier, 240 A HALF-PAK (D-67) PRODUCT SUMMARY I F(AV) V R Package Circuit Lug terminal anode Base cathode 240 A 150 V HALF-PAK (D-67) Single diode FEATURES 175 C T J operation
Thin Film Mini-MELF Resistors
FEATURES Advanced thin film technology AEC-Q2 qualified Low TCR and tight tolerances Excellent stability in different environmental conditions Pure tin termination on nickel barrier, plated on press fit
High Current Density Surface Mount Dual Common-Cathode Schottky Rectifier
High Current Density Surface Mount Dual Common-Cathode Schottky Rectifier esmp Series 2 TO-277A (SMPC) Anode Cathode Anode 2 FEATURES Very low profile - typical height of. mm Ideal for automated placement
P-Channel 20-V (D-S) MOSFET
P-Channel -V (D-S) MOSFET DTE3 PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A).5 at V GS = -.5 V -. -.7 at V GS = -.5 V - 3.6 FEATURES Halogen-free RoHS COMPLIANT TO-6AA (TO-9) S* S G G D 3 Top View D P-Channel
"High Side Chopper" IGBT SOT-227 (Trench IGBT), 100 A
"High Side Chopper" IGBT SOT-227 (Trench IGBT), A FEATURES Trench IGBT technology VS-GTNA2UX SOT-227 PRODUCT SUMMARY V CES 2 V I C DC A at 7 C V CE(on) typical at A, 25 C 2.36 V Package SOT-227 Circuit
USB-OTG BUS-Port ESD-Protection for V BUS = 12 V
USB-OTG BUS-Port ESD-Protection for V BUS = 12 V 6 5 4 1 2 3 MARKING (example only) 2517 Dot = Pin 1 marking XX = Date code YY = Type code (see table below) 7 212 XX YY 21 1 FEATURES Ultra compact LLP75-7L
Standard Recovery Diodes (Stud Version), 70 A
Standard Recovery Diodes (Stud Version), 70 A VS- FEATURES High surge current capability Designed for a wide range of applications Stud cathode and stud anode version Leaded version available DO-203AB
Standard Recovery Diodes (Stud Version), 150 A
Standard Recovery Diodes (Stud Version), 150 A DO-205AA (DO-8) PRODUCT SUMMARY I F(AV) 150 A Package DO-205AA (DO-8) Circuit configuration Single diode FEATURES Alloy diode High current carrying capability
Metal Film Resistors, Industrial, Precision
CMF Industrial Metal Film Resistors, Industrial, Precision FEATURES Small size - conformal coated Flame retardant epoxy coating Controlled temperature coefficient Excellent high frequency characteristics
Silicon Photodiode, RoHS Compliant
Silicon Photodiode, RoHS Compliant DESCRIPTION 94 8482 is a planar Silicon PN photodiode in a hermetically sealed short TO-5 case, especially designed for high precision linear applications. Due to its
Infrared Emitting Diode, 950 nm, GaAs
TSUS52, TSUS521, TSUS522 Infrared Emitting Diode, 95 nm, GaAs DESCRIPTION 94 839 TSUS52 is an infrared, 95 nm emitting diode in GaAs technology molded in a blue-gray tinted plastic package. FEATURES Package
Insulated Ultrafast Rectifier Module, 210 A
Insulated Ultrafast Rectifier Module, 2 A SOT-227 1 4 2 3 FEATURES Two fully independent diodes Fully insulated package Ultrafast, soft reverse recovery, with high operation junction temperature (T J max.
High Performance Schottky Rectifier, 200 A
High Performance Schottky Rectifier, 200 A VS-203CNQPbF TO-244 PRODUCT SUMMARY I F(AV) V R Package Circuit Lug terminal anode Lug terminal anode 2 Base common cathode 200 A V TO-244 Two diodes common cathodes
Silicon NPN Phototransistor
Silicon NPN Phototransistor DESCRIPTION 94 8638-1 is a silicon NPN phototransistor with high radiant sensitivity in clear, T-3/4 plastic package with lens. It is sensitive to visible and near infrared
Silicon PIN Photodiode
Silicon PIN Photodiode DESCRIPTION 94 8633 BPV22NF is a PIN photodiode with high speed and high radiant sensitivity in a black, plastic package with side view lens and daylight blocking filter. Filter
N- and P-Channel 20 V (D-S) MOSFET
N- and P-Channel V (D-S) MOSFET DTS5 PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) N-Channel 99 at V GS = 4.5 V..4 at V GS =.5 V.9 P-Channel - 89 at V GS = - 4.5 V -.5 73 at V GS = -.5 V -.4 FEATURES Halogen-free
High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs
TSAL76 High Power Infrared Emitting Diode, 94 nm, GaAlAs/GaAs DESCRIPTION 94 8389 TSAL76 is an infrared, 94 nm emitting diode in GaAlAs/GaAs technology with high radiant power molded in a clear, untinted
Standard Recovery Diodes, (Stud Version), 85 A
Standard Recovery Diodes, (Stud Version), 85 A FEATURES High surge current capability Stud cathode and stud anode version Leaded version available Types up to 400 V V RRM Designed and qualified for industrial
Silicon NPN Phototransistor, RoHS Compliant
Vishay Semiconductors Silicon NPN Phototransistor, RoHS Compliant DESCRIPTION 9 1 BPW76 is a silicon NPN phototransistor with high radiant sensitivity in hermetically sealed TO-1 package with base terminal
New Product. High Temperature Stability and High Reliability Conditions FEATURES
Surface Mount PAR Transient Voltage Suppressors High Temperature Stability and High Reliability Conditions PRIMARY CHARACTERISTICS V WM 1 V to 43 V V BR 11.1 V to 52.8 V P PPM 3 W P D 6. W I FSM 2 A T
High Current Density Surface Mount Dual Common Cathode Schottky Rectifiers
High Current Density Surface Mount Dual Common Cathode Schottky Rectifiers FEATURES esmp Series Very low profile - typical height of. mm Available Ideal for automated placement Low forward voltage drop,
Silicon NPN Phototransistor
Silicon NPN Phototransistor DESCRIPTION 7 is a silicon NPN phototransistor with high radiant sensitivity in black, T-1¾ plastic package with base terminal and daylight blocking filter. Filter bandwidth
Photovoltaic MOSFET Driver with Integrated Fast Turn-Off, Solid-State Relay
Photovoltaic MOSFET Driver with Integrated Fast Turn-Off, Solid-State Relay i7966_6 Turn Off FEATURES Open circuit voltage at I F = ma, 8. V typical Short circuit current at I F = ma, 5 μa typical Isolation
AC Line Rated Ceramic Disc Capacitors Class X1, 400 V AC / Class Y2, 300 V AC / 250 V AC
AC Line Rated Ceramic Disc Capacitors Class X1, V AC / Class Y, V AC / V AC FEATURES Complying with IEC 638-1 3 rd edition High reliability Complete range of capacitance values Radial leads Singlelayer
Matched Pairs of Emitters and Detectors
Matched Pairs of Emitters and Detectors TCZT82 96 237_ DESCRIPTION The TCZT82 include matched infrared emitters and phototransistors in leaded packages, used to assemble custom-designed transmissive sensors
High Speed Infrared Emitting Diode, 850 nm, GaAlAs, DH
High Speed Infrared Emitting Diode, 850 nm, GaAlAs, DH DESCRIPTION is an infrared, 850 nm side looking emitting diode in GaAlAs double hetero (DH) technology with high radiant power and high speed, molded
Ten Turns Servo or Bushing Mount Hall Effect Sensor in Size 09 (22.2 mm)
Ten Turns Servo or Bushing Mount Hall Effect Sensor in Size 09 (22.2 mm) ELECTRICAL SPECIFICATIONS FEATURES All electrical angles available up to: 3600 Accurate linearity down to: ± 0.5 % Very long life:
High Speed Infrared Emitting Diode, 890 nm, GaAlAs Double Hetero
High Speed Infrared Emitting Diode, 89 nm, GaAlAs Double Hetero 94 839 DESCRIPTION is an infrared, 89 nm emitting diode in GaAlAs double hetero (DH) technology with high radiant power and high speed, molded