TS19730CX6 USER MANUAL A1601
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1 TS19730CX6 USER MANUAL A1601
2 APPLICATION CIRCUIT ONE WINDING Use Zener Diode for IC - VZener + TS19730 CS GND COM CL V_OVP = V + VZener VOVP = 31V (Typ) RCL RCS - V + For Lower V V Operation Range is About 18V
3 APPLICATION CIRCUIT TWO WINDINGS Use Auxiliary for TS19730 CS V_OVP = V X NP / NA VOVP = 31V (Typ) RCL GND COM CL NA NP RCS - V + For Higher V V Operation Range is About 18V X NP / NA
4 TS19730 LOW THD SOLUTION (NON-ISO, BUCK-BOOST) Operation principle BUCK-BOOST Topology Low THD <10% High Power Factor >0.9 Low BOM Cost Discontinuous Conduction Mode (DCM) Constant On Time (COT) Non-Fixed Switching Frequency Gate Output Voltage Clamp LED Open Protection (OVP) LED Short Protection (SCP) Over Current Protection (OCP) Over Thermal Protection (OTP) Constant On time Inductor Peak Current Input Voltage --- Input Voltage Waveform --- Inductor Peak Current Waveform --- Inductor Waveform --- MOS Gate Output Waveform
5 BUCK-BOOST PRINCIPLE MOS TURN ON MOS Turn ON TS19730 CS GND COM CL RCL Current = MOS Current MOS Current Limit = 300mV/ RCL
6 BUCK-BOOST PRINCIPLE MOS TURN OFF MOS Turn Off TS19730 CS GND COM CL RCS Current = I Current I = 200mV / RCS
7 DESIGN SAMPLE Input : 90Vac ~ 264Vac / 50Hz~60Hz Output : 100VDC / 180mA VAC 90Vrms to 264Vrms TS19730 CS GND COM CL I =180mA - V =100V +
8 CALCULATION FORM POWER PUT Power Output Output Voltage(V) 100 V Output Current (I) 0.18 A 2nd Diode Forward Voltage (VF) 1.5 V V+VF Output Power (Pout) 18 W Efficiency (η) 0.9 Input Power (Pin) W IC Voltage 25 V IC Parameter VOVP = 31V (Typ) VUVLO(off) = 8V (Typ) Suggest Point 15V~27V Check the V_OVP + - TS19730 GND = 25V CS COM Efficiency is about 85% to 90% Suggest 90% at first CL =>Key in =>Output NA RCL NP RCS - VF = 1.5V + I =180mA - V =100V +
9 CALCULATION FORM POWER INPUT Power Input Min. Input Voltage (Vac_min) 90 Vrms Max. Input Voltage (Vac_max) 264 Vrms VAC 90Vrms to 264Vrms =>Key in =>Output
10 CALCULATION FORM BUCK-BOOST OPERATION PARAMETER Buck-Boost Operation Parameter On Vac_min ton 10 us Indoctor Discharge time toff us Switching frequency Fsw(min)@Vac_min khz Condition Vac_min 90Vac On time setting < 14us (IC Max On time 14us) Check the Switching Frequency Switching Frequency Vac_min Peak Voltage =>Key in =>Output ton toff1 T=1/FSW
11 CALCULATION FORM INDUCTOR DESIGN Inductor Design Ae value of the core 36.6 mm^2 Maximum Flux Density (Bmax) 3300 Gauss Ae Value Choose RM6 Core Ae =36.6 mm^2 Type Material Ap Ae Aw A L Le Ve Wt (cm 4 ) (mm 2 ) (mm 2 ) (nh/n 2 ) (mm) (mm 3 ) (g) RM4 PC RM5 PC RM6 PC RM8 PC RM10 PC RM12 PC RM14 PC =>Key in =>Output
12 CALCULATION FORM INDUCTOR DESIGN Inductor Design Ae value of the core 36.6 mm^2 Maximum Flux Density (Bmax) 3300 Gauss Flux density Choose PC40 Material 120 Bs Value is About 350mT Setting Maximum Flux Density 330mT = 3300Gauss =>Key in =>Output
13 CALCULATION FORM TRANSFORMER INDUCTANCE Transformer inductance Primary Side Peak Vac_min (Ipk) A Primary Side Inductor Values (LP) uh Condition Vac_min 90Vac Ipk TS19730 CS GND COM CL LP =>Key in =>Output
14 CALCULATION FORM TRANSFORMER TURNS Transformer Turns NP_ Turns Turns of Primary Side NP = Turns NA_ Turns Turns Of Auxiliary Winding NA = Turns Check = V TS GND CS COM CL NA NP =>Key in =>Output
15 CALCULATION FORM LED OPEN OVP SETTING Check V_OVP > 110% x V V~128.33V > 110% x 100V = 110V VOVP VUVLO(on) VUVLO(off) LED Open OVP Settign VOVP=29V V VOVP=31V V VOVP=33V V TS19730 GND + - CS COM V t CL V_OVP t - V_OVP + =>Key in =>Output t
16 CALCULATION FORM KEY COMPONENT VOLTAGE STRESS KEY Component Voltage Stress Voltage Stress on Main Diode V Voltage Stress on MOSFE V TS19730 CS GND COM CL =>Key in =>Output
17 CALCULATION FORM LED OPEN OVP SETTING RCS / RCL Setting RCS = Ω RCL = Ω TS19730 Suggest RCS and RCL Value RCS =200mV / I RCL = 0.8 X 300mV / Ipk Can be fine tune GND CS COM CL RCL RCS =>Key in =>Output
18 TRANSFORMER DESIGN NA NP 3 6 TOP Bottom 2 2 Core RM6 Bobbin RM6 2 NP NA Core ROUNDING TAPE COPPER SHIELD Bobbin Core No NP NA Thermal S F Wire Turns Winding Method NP mm x 1P 105 Solenoid winding Insulation : Polyster Tape t=0.05mm, 2Layer NA mm x 1P 27 Center Solenoid winding Insulaiton : Polyster Tape t=0.05mm, 2Layer Outer Insulation : Polyster Tape t=0.05mm, 2Layer 2 Outer Copper Shielding 1.2 Outer Insulation : Polyster Tape t=0.05mm, 2Layer Pin Sepcification Remark Primary Side Inductance 2<=>6 820uH+/1 10% 100KHz, 1V
19 TS19730 DEMO BOARD ELECTRICAL CIRCUIT
20 TS19730 DEMO BOARD
21 IIout (ma) TS19730CX6 DEMO BOARD TEST RESULT THD (%) Vac Pin (W) Vout (V) Iout (ma) Pout(W) Eff (%) PF THD % % % % % % % % Line regulation THD Vac (Vrmss) Vac (Vrmss) P10.
22 THANK YOU Taiwan Semiconductor Co., Ltd. Headquarters Address: 11F. No. 25 Sec. 3, Beishin Rd, Shindian District, New Taipei City, Taiwan R.O.C. Telephone: Website:
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