US A1 (19) United States (12) Patent Application Publication (10) Pub. N0.: US 2013/ A1 Zhou et a]. (43) Pub. Date: Aug.
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1 US A1 (19) United States (12) Patent Application Publication (10) Pub. N0.: US 2013/ A1 Zhou et a]. (43) Pub. Date: Aug. 22, 2013 (54) MAGNETORESISTIVE LOGIC CELL AND (52) US. Cl. METHOD OF USE CPC..... G11C 11/16 ( ) (71) Applicant: AVALANCHE TECHNOLOGY INC., (Us) USPC /158 (72) Inventors: Yuchen Zhou, San Jose, CA (U S); Zihui (57) ABSTRACT Wang, Fremont, CA (US); Yiming Hual Pleasamon CA (Us) A magnetoresistive logic cell (MRLC) is described that (73) Assigneez AVALANCHE TECHNOLOGY INC includes two MT] s in series that share a common free layer Fremont CA (Us) (CFL). The relative magnetization orientations of the CFL and the switchable reference layer (SRL) in MT] -1 dominate (21) Appl, NO; 13/774,801 the overall resistance of the MRLC Without regard to the?xed magnetization orientation of the nonswitchable reference (22) Filed: Feb- 22, 2013 layer in MTJ-2. High and low resistance states of the MRLC occurs based on the relative magnetization orientations of Related US Application Data SRL and CFL. This behavior allows the MRLC to be used as (63) Continuation-in-part of application No. 13/402,123,?led on Feb 22, 2012' a logical Comparator- The CPL is Switched by STT effect by application of selected relatively short voltage pulses that do Publication Classi?cation not switch the SRL. A voltage-induced switching principle can be used With MRLC embodiments of the present inven tion to switch the SRL to parallel or anti-parallel With respect (51) Int. C1. to the magnetization CFL in both perpendicular and in-plane G11C 11/16 ( ) anisotropy embodiments. ( ) Top 1 _ R1 C1 >> C2 R1 >> R2 C2 R2 MTJ-2 Bottom
2 Patent Application Publication Aug. 22, 2013 Sheet 1 0f 21 US 2013/ A1 Perpendicular MRAM Cell 10P Top Metal / Pinned Ref. 15 AF-Coupling 14 Mag. Ref P Junction 12 MTJ Free Mag. 11 Bottom Metal Fig. 1 (Prior Art)
3 Patent Application Publication Aug. 22, 2013 Sheet 2 0f 21 US 2013/ A1 Top Magnetic Layer 41 \ / Anisotropy M90 3 E O + Layer 42/ O _ Bottom Magnetic Layer FIG. 2 (Prior Art)
4 Patent Application Publication Aug. 22, 2013 Sheet 3 0f 21 US 2013/ A Bottom CoFeB Top CoFeB -O.8 -O'.6-0'.4-0!2 (5 0' ' Electric Field (v nm'1) FIG. 3 (Prior Art)
5 Patent Application Publication Aug. 22, 2013 Sheet 4 0f 21 US 2013/ A1 0'08 _ I Parallel E O Antiparallel i. \ Flt E O 2 <; H l? ' 'WVW R a M90 layer thickness (nm) FIG. 4 (Prior Art)
6 Patent Application Publication Aug. 22, 2013 Sheet 5 0f 21 US 2013/ A1 50 t, Top Metal Current Switchable Flow Reference 53 \ Junction 52\- Common 51 \. Free Layer Junction 54 / Nonswitchable 55 I" Reference MTJ-1 (Higher RA) 1' MTJ-Z (Lower RA) Bottom Metal FIG 5 0 Top \ C1 2: R1 - MTJ-1 C1>> C2 ) R1 >> R2 \ 02 I: R2 >MTJ-2 : G_ 6 J Bottom
7 Patent Application Publication Aug. 22, 2013 Sheet 6 0f 21 US 2013/ A G) C) CD 0 ' T'T l Voltage on T T~~~ ~~ MTJ-1 ~ / r Percentage of applied voltage (%) Q) C) a Frequency (Hz) FIG. 7
8 Patent Application Publication Aug. 22, 2013 Sheet 7 0f 21 US 2013/ A1 50A \1 Top Metal Current Switchable FIOW Reference 53R ~\- 1 Junction 52P \_ Free Common Layer 51 P \_ Junction 54P / T Nonséwiitchable 55F)" e erence - Anti-ferromagnetic 56P /_ Exchange Coupling Pinned 57p MTJ-1 MTJ-2 Bottom Metal FIG M Top Metal Current Switchable Flow Reference 53H \_ <_> Junction 52H \_ MTJ-1 Common 51 H \_ Free Layer 4- Junction 54H/, > ]. MTJ-Z Nonswitchable 55H Reference < Anti-ferromagnetic 56H Exchange Coupling» ' Layer Pinned 57H Bottom Metal FIG /58H Antiferromagnetic
9 Patent Application Publication Aug. 22, 2013 Sheet 8 0f 21 US 2013/ A1 5OP 3/ Narrow positive voltage pulse 61 switches common free layer 51 P by STT from nonswitohable layer 55P by moving electrons from layer 55P to layer 51 P i'é'ggreanbég, Top Metal Top Metal 5OP 52P \_ Common 51 P \_ y Free Layer ' CFL 51 P Switches 54P / 1 1 _ 55P f" NonsF avélljgreantig Bottom Metal Bottom Metal FIG. 10 Narrow negative voltage pulse 62 switches 5gp common free layer 51 P by moving electrons from layer 51 P to layer 55P 5OP, Top Metal Top Metal i'é'ggreanbég 53P \- /U 52p Common 51 P \_ i Free Layer 54p /' CFL 51 P Switches _ 55P f" t t Nonlsqvggsntiz Bottom Metal Bottom Metal FIG. 11 t i
10 Patent Application Publication Aug. 22, 2013 Sheet 9 0f 21 US 2013/ A1 50' Ramped longer negative voltage pulse 63 causes switchable reference layer 53P to switch to parallel with the common free layer 51 P by moving electrons from layer 53F to layer 51 P. 5OP, Top Metal Top Metal Switchable Reference 63J 53F x' i :> 1 52P \. SRL 53P Common 51 P \_ Switches to Free Layer i parallel CFL 51 P i 54P / t _ 55P # NonsRvélifgreantiz Bottom Metal Bottom Metal FIG F 50p ll 8.t h bl Top Metal U Top v eta Rvelfgreancz 63J 53F> \- 1 I: 52F \- SRL 53p Common 51 P \_ Switches to Free Layer _ parallel CFL 51 P 54P / t _ 55P, NonsRvélggreantig Bottom Metal Bottom Metal FIG. 13 t t
11 Patent Application Publication Aug. 22, 2013 Sheet 10 0f 21 US 2013/ A1 Common free layer (CFL) 51 H Switches SRL 53H Switches to antiparallel to parallel - with 51H w th 55H V 61 64H *UL f\ Switchable Referen\ce (SRL) w» 5_H > C> 5_H< i <- :> m -> 51 -> 55H ' 55H I 55H ' 7 50H 50H 50H FIG. 14 Ramped longer positive voltage pulse causes switchable reference layer 53H to switch to antiparallel with the common free layer 51 H by moving electrons from layer 51 H to layer 53H
12 Patent Application Publication Aug. 22, 2013 Sheet 11 of 21 US 2013/ A1 Common free layer (CFL) 51H Switches to antiparallel with 55H 64H m _ /62 SRL 53H Switches to antiparallel with 51H Switchable Referen\ce (SRL) 53_H < 5i < C> 5i > 51 -> :> 51 <- 51 < 55H ' 55H I 55H I H 50H 50H FIG. 15 Ramped longer positive voltage pulse causes switchable reference layer 53H to switch to antiparallel with the common free layer 51 H by moving electrons from layer 51 H to layer 53H
13 Patent Application Publication Aug. 22, 2013 Sheet 12 0f 21 US 2013/ A1 AEBB CFL / BU
14 Patent Application Publication Aug. 22, 2013 Sheet 13 0f 21 US 2013/ A1 Fixed Magnetic Layer MgO Barrier 142; k > + f ' 143 ' _ Free Magnetic Layer v 141 k Switching Free Layer from Parallel to Anti-parallel to Fixed Layer 142 f _> Voltage applied is 5 400mV~700mV 143 iii? 5511 (Pricr Art} Switching Free Layer from Anti-parallel to Parallel to Fixed Layer Voltage applied is _ 1000mV or more _ 142 f.. 4- Voltage applied IS > 143 5' 1000mV or more F l WC (Prim
15 Patent Application Publication Aug. 22, 2013 Sheet 14 0f 21 US 2013/ A1 Negative voltage pulse 66H with a selected high amplitude causes magnetization of switchable reference layer 53P to switch to parallel with the common free layer 51 P. 5UP A, U S.t h bl Top Metal / Top Meta Rvelfgreancg 66H 53P \ 52P \_ Common 51 P \_ SRL 53P Switches to Free Layer 4? parallel CFL 51 P % 54P / _ 55P, NonsRvéligreant? Bottom Metal Bottom Metal PEG. 18A 5UP Negative voltage pulse 163H with a selected high amplitude causes magnetization of switchable reference layer 53P to switch to parallel with the common free layer 51 P. 50F 5UP S Itchable Top Metal / Top Metal Wl Reference 66H 53P \ 52P \_ SRL 53P Common 51 P \_ % Switches to % Free Layer, parallel CFL 51 P 54P / I 55P, Nonswltchable Bottom Metal Bottom Metal Reference HG. 18B
16 Patent Application Publication Aug. 22, 2013 Sheet 15 0f 21 US 2013/ A1 Negative voltage pulse 66L with a selected low amplitude causes magnetization of switchable reference layer 53F to switch to anti-parallel with the common free layer 51 P. 66L 50F 50P l \\ / 8.t h bl Top Metal Top v eta W C a 6 Reference 53F \- % % 52P \_ Common 51 P \_? SRL 53F Switches to Free Layer anti-parallel % ' 54P / FL 1P C 5 I 55P i NonsRvéliecreanbég Bottom Metal Bottom Metal FlG. 19A Negative voltage pulse 66L with a selected low amplitude causes magnetization of switchable reference layer 53F to switch to anti-parallel with the common free layer 51 P. 5UP 66L 50F, t w 1 S 't h bl Top Metal Top Metal Reference C \' SRL 53P ommon _\_. Free Layer % sw!tches to i - antl-parallel 54P / CFL 51 P 55P, Nonswitchable Reference Bottom Metal Bottom Metal FEG. 19B
17 Patent Application Publication Aug. 22, 2013 Sheet 16 0f 21 US 2013/ A1 Common free layer (CFL) 51 P Switches.. SRL 53P Swltches to para"e' W'th NRL 55p to parallel with CFL 51P V 61 with selected high "'UL amplitude pulse PEG. 26A
18 Patent Application Publication Aug. 22, 2013 Sheet 17 0f 21 US 2013/ A1 Common free layer (CFL) 51 P Switches to parallel with NRL 55P SRL 53F SW'tChes to anti-parallel with CFL 51 P with selected low amplitude pulse 66L
19 Patent Application Publication Aug. 22, 2013 Sheet 18 0f 21 US 2013/ A1 Common free layer (CFL) 51 P Switches to anti-parallel with NRL 55P upon narrow negative pulse SRL 53P Switches to parallel with CFL 51P with selected high amplitude pulse QQE 2 +0 X E :>...1..E 55B 50P 5OP HG. 21A
20 Patent Application Publication Aug. 22, 2013 Sheet 19 0f 21 US 2013/ A1 Common free layer (CFL) 51 P Switches to anti-parallel with NRL 55P upon narrow negat've pu'se V SRL 53F, Switches to anti-parallel with CFL 51P with selected low + amplitude pulse PEG. 21B
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US A1 (19) United States (12) Patent Application Publication (10) Pub. No.: US 2014/ A1 Wang et al. (43) Pub. Date: Jun.
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