Infrared Light Emitting Diode

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Julie Chambers
5 years ago
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Features: High power GaAs, 940 nm center wavelength High power GaAIAs and T, 875 nm center wavelength VCSEL GaAlAs, 850 nm center wavelength Point Source GaAlAs, 850 nm center wavelength PLCC2

in plastic leadless PLCC2 SMD package with a flat lens window that allows a wide beam angle. The major differentiator from the two High power GaAlAs LEDs is that T has reversed polarity terminals.

Its high speed, high output and narrow beam pattern (18 ) makes it very suitable for highspeed data equipment applications.

The 180 and 280 Series LEDs are mechanically and spectrally matched to OP580 series phototransistors.

1 Features: High power GaAs, 940 nm center wavelength High power GaAIAs and T, 875 nm center wavelength VCSEL GaAlAs, 850 nm center wavelength Point Source GaAlAs, 850 nm center wavelength PLCC2 package style with silicon encapsulation Half Power Beam angle from 18 to 100 Suitable for single device or array applications Description: The is a GaAs and the, T is a GaAIAs infrared LED mounted in plastic leadless PLCC2 SMD package with a flat lens window that allows a wide beam angle. The major differentiator from the two High power GaAlAs LEDs is that T has reversed polarity terminals. The is incorporated into the group with a high performance 850nm invisible VCSEL (Class 1M) with silicon encapsulant. Its high speed, high output and narrow beam pattern (18 ) makes it very suitable for highspeed data equipment applications. The has a GaAlAs diode in a PLCC2 package that features a narrow irradiance pattern. The PLCC2 packaging is suitable for single device or array applications. The 180 and 280 Series LEDs are mechanically and spectrally matched to OP580 series phototransistors. Applications: Noncontact position sensing Datum detection Machine automation Optical encoding Part Number Apertured Power (mw/cm 2 ) Ordering Information I F (ma) LED Peak Wavelength Half Power Angle nm 100 T nm nm nm nm 18 Pin #1 (Anode or Cathode Notch) OP280 2 Pin # T 1 Cathode Cathode Anode Anode Cathode 2 Anode Anode Cathode Cathode Anode RoHS Phone: (972) or (800) FAX: (972) sensors@optekinc.com Page 1 of 7

2 Absolute Maximum Ratings (T A =25 C unless otherwise noted) Storage Temperature Range Operating Temperature Range,, T, Reverse Voltage,,, T Peak Forward Current [ 1µs pulse width, 300 pps] 40 o C to +100 o C 25 o C to +85 o C 0 o C to +70 o C 5.0 V 4.0 V 1.0 A Lead Soldering Temperature [1/16 inch (1.6 mm) from case for 5 seconds with soldering iron] 260 C (1) Power Dissipation 130 mw (2) Electrical Characteristics (T A = 25 C unless otherwise noted) SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS Input Diode E E (APT) Radiant Incidence OP mw/cm 2 (3) I F = 7 ma V F Forward Voltage T V I F = 50 ma I F = 7 ma I R Reverse Current 100 µa V R= 5.0 V λ P Wavelength at Peak Emission T, nm I F = 7 ma θ HP Emission Angle at Half Power Points,, T Degree I F = 7 ma t r t f Output Rise Time,, T, Output Fall Time,, T, 25 ns 25 ns I F(PK)=50 ma, PW=10 µs, and D.C.=10.0% Notes: 1. Solder time less than 5 seconds at temperature extreme. 2. Derate linearly at 2.17 mw/ C above 25 C. 3. E E(APT) is a measurement of the apertured radiant incidence upon a sensing area (2.06 mm) in diameter, perpendicular to and centered on the mechanical axis of the lens and (14.99 mm) from the measurement surface. E E(APT) is not necessarily uniform within the measured area. Page 2 of 7 Phone: (972) or (800) FAX: (972) sensors@optekinc.com

3 I F vs V F vs Temp. I F vs E E vs Temp C 20 C 0 C +20 C +40 C +60 C +80 C +100 C +20 C, 20 ma V F (Volts) C 20 C 0 C +20 C +40 C +60 C +80 C +100 C I F (ma) Normalized E E I F (ma) OP280 Typical Forward Voltage Forward Voltage vs Forward Current Forward Voltage vs vs Forward Temperature Current vs Temperature 40 C 20 C 0 C +20 C +40 C +60 C +80 C +100 C Normalized Optical Power Optical Power vs I F vs Temperature Normalized at 50 ma and 20 C 60 C 40 C 20 C 0 C 20 C 40 C 60 C 80 C 100 C 120 C Forward Current (ma) Forward Current I F (ma) Phone: (972) or (800) FAX: (972) sensors@optekinc.com Page 3 of 7

4 Page 4 of 7 Phone: (972) or (800) FAX: (972) sensors@optekinc.com

5 T Phone: (972) or (800) FAX: (972) Page 5 of 7

6 Page 6 of 7 Phone: (972) or (800) FAX: (972) sensors@optekinc.com

7 Phone: (972) or (800) FAX: (972) Page 7 of 7

8 Issue Change Description Approval Date /05 A A.1 Taken from PDF Catalog: OP280 (Issue 1.1, dated 07/05). Added INF226 charts. Moved 1st and 2nd charts to page 2. Removed 3rd and 4th charts. Removed polysulfone warning box from page 1. Repositioned items on page 1. Changed Forward Voltage to 50 ma in Electrical Characteristics table on page 2. Removed page 3. Removed comma from line 1 under Description, page 1. Trevor Schelp 05/25/06 Trevor Schelp 06/01/06 A.2 Added with Charts. Chima Ehiem 08/01/07 A.3 Chima Ehiem 08/01/07 Page 8 of 7 Phone: (972) or (800) FAX: (972) sensors@optekinc.com

PLCC-2 Pkg Infrared Light Emitting Diode

PLCC-2 Pkg Infrared Light Emitting Diode PLCC2 Pkg Infrared Light Emitting Diode & Series Features: SMD Package High power GaAs, 940 nm typical peak wavelength Standard GaAlAs, 890nm typical peak wavelength High power GaAIAs K and KT, 875 nm