Constant Length Wirebonding for Microwave Multichip Modules

Size: px
Start display at page:

Download "Constant Length Wirebonding for Microwave Multichip Modules"

Transcription

1 Intl. Journal of Microcircuits and Electronic Packaging Constant Length Wirebonding for Microwave Multichip Modules S. John Lehtonen and Craig R. Moore The Johns Hopkins University Applied Physics Laboratory Johns Hopkins Road Laurel, Maryland Phone: Fax: s: and Abstract This paper examines a method to automatically make constant length wirebonds in microwave Multichip Modules. In general, the goal in microwave packaging is to have short interconnects for control of impedance and to ensure low gain ripple, low noise figure, or low loss in transmitter power paths. At ever- increasing frequencies, interconnects between different monolithic microwave integrated circuit (MMIC) chips or to substrate traces will behave as strong circuit discontinuities, which require a compensation network. Making the interconnect length constant allows the circuit designer to use the theoretical model of the wirebond as an element of a flexible compensation network. The technique of constant length wirebonding allows the actual wire length to remain the same even though the distance between the first and second bond pad changes due to tolerances in chip size and placement accuracy. The constant length wire is achieved with a programmable automatic wirebonder with special software that allows the user to precisely control the movement of the bonding tool (the wire is spooled out through a hole at the bottom of the tool) throughout the entire bonding cycle. Sample electrical components were wirebonded with the standard looping program and with the constant length wire looping program. Electrical test data show that the samples bonded with constant wire lengths had improved electrical performance. The constant length wirebonding operation is also described in this work. Key words: Wirebond, Electrical Interconnect, Constant Length Wirebonding, Microwave, MCM, and MMIC. 1. Introduction In recent years, great efforts have been undertaken to develop assembly processes for packaging components into microwave Multichip Modules (MCMs), which now are being introduced for communications and radar systems. Constant length wirebonding can improve MCM manufacturability for many of the applications shown in Table 1. From the cellular phone frequency range of MHz to military radars at 10 GHz and beyond, the parasitic inductance of an uncontrolled length wirebond used to electrically connect the various ICs and chip components can cause significant signal degradation. A typical wirebond can lead to loss of power and introduction of high noise levels that will significantly reduce the range and performance of the device. Table 1. The wireless radio bands of current commercial interest are concentrated below 6 GHz. As these frequency bands are occupied, future applications will push operation to higher frequencies. Service Frequencies (MHz) Description Cellular GSM DCS PCS U-ISM U-NII HIPERLAN U-ISM LMDS ,100 31,500 Mobile Communications (N. America) Global System for Mobile Communications (Europe) Digital Communications System (Europe) Personal Communications Systems Unlicensed Industrial Scientific Medical (N. America) Unlicensed National Information Infrastructure Wireless Local Area Network Unlicensed Industrial Scientific Medical (N. America) Local Multipoint Distribution Service This paper presents data from test samples that were wirebonded with both the standard uncontrolled length wire pro- 110 International Microelectronics And Packaging Society

2 Constant Length Wirebonding for Microwave Multichip Modules gram and the constant length wire program. The components on the sample devices had varying gaps between them to simulate conditions found in a typical MCM. This work demonstrates that manufacturability of microwave MCMs can be improved due to the relaxed tolerances for component placement, and enhanced electrical performance can be obtained when the constant length wirebonding technique is incorporated into the microwave MCM manufacturing process. 3. Compensation Network A compensation network that approximates a 50-ohm transmission line consists of two capacitors and an inductor between them as shown in Figure 1. Computer simulation and electrical modeling can be used to calculate the required capacitance and inductance values for the compensation network to improve the circuit performance over a range of frequencies Applications For efficient, point-to-point transmission of power and information from an electro-magnetic wave source, the source energy must be directed or guided 1. Typically in MCMs, microstrip transmission lines are used to guide the signal 2. Microwave circuit designers have selected 50-ohm characteristic impedance as a standard design specification for transmission lines, and most circuits are fabricated with the goal of having the entire microwave signal path be at this characteristic impedance. The signal path on a substrate can easily be made to match the 50-ohm requirement by depositing a calculated trace width on a known substrate material. Many processes currently exist for depositing sufficiently accurate trace widths on various substrate materials. In a typical microwave MCM, electrical interconnects must be made between multiple monolithic microwave integrated circuits (MMICs) and other circuit elements. The problem is that a random length of wire (suspended in air) does not have the characteristic impedance of 50 ohms. As operating frequencies increase, the wires to MMIC chips to substrates, or to package feedthroughs behave increasingly as strong discontinuities 3,4. These discontinuities cause the degradation in the electrical signal transfer. Ideally, all components could be placed side by side with no gaps between them and no variations in component thicknesses to make the interconnect lengths zero. But in the real world, variations due to manufacturing tolerances must be considered. Some gap will always remain due to the variations in both chip sizes and irregular edges. Thermal expansion effects require that the interconnection also have a small loop for stress relief. In addition, the placement accuracy capability of the assembly equipment and the possibility that the electrically conductive attachment medium will squeeze up between the components can also increase this gap. As it becomes larger, the length of the wire between the components must increase. When compensation is not used, the signal degradation worsens as the wire length increases. Eventually, the circuit performance becomes unacceptable and a compensation network is required. Figure 1. Example of typical microwave MCM with interconnects at MMIC chips and 50-ohm substrates and equivalent electrical model of the compensation network. each interconnection between the components will have a unique wirebond length that is determined with computer simulation. The use of a compensation capacitor does not add any steps to the existing substrate metallization process since it is made at same time as the 50-ohm microstrip line is deposited on the substrate. The capacitor, located at the end of the trace, is formed by intentionally widening the microstrip line by a calculated amount. Widening the trace has the effect of making two parallel plates separated by a dielectric, the substrate. This forms the standard structure of a capacitor since the substrate backside is also metallized and usually connected to ground in the MCM package. The widened trace on the substrate also serves as an ideal wirebonding pad. The compensation capacitor on the MMIC (or other chip component) is the parasitic capacitance of its wirebonding pad. The wirebonding pad forms a capacitor to ground because it behaves like one side of a parallel plate separated by the device body, also a dielectric. The inductor is made by the length of the interconnect wire. The inductance of the wire is a function of its length and diameter. For a fixed wire diameter, the inductance increases as the wire length increases. For a flexible compensation network to function properly, the interconnect wire length must be controlled with a great degree of accuracy to obtain the calculated required inductance value. A constant length wire is required to make the interconnection across a variable gap. International Microelectronics And Packaging Society 111

3 Intl. Journal of Microcircuits and Electronic Packaging 4. Electrical Model In the electrical model of a typical MCM interconnect at MMIC chips and 50-ohm substrates (Figure 1), each interconnect between components must be modeled separately resulting in unique wirebond lengths for each case. As stated previously, the inductance value in the model is determined (to first order) by the wirebond length, and the capacitance value is determined by the dimensions of the bond pads. The impedance of the lumped element approximation of a transmission line is proportional to the inductance to capacitance ratio, (L/C). However, the maximum frequency of acceptable performance of this LC circuit is proportional to 1/ (LC). Thus, at higher frequencies, one is concerned with the nominal length of the wire as well as with its variation in length. Placing wirebonds in parallel can reduce the inductance, provided they are separated by more than 10-wire diameters 6 or are angled 7. This is true since the mutual inductance between the wires adds to the inductance, but is inversely proportional to the wire separation and proportional to the cosine of the included angle between the wires. Controlling the placement and length of the wirebonds, the interconnection parasitic can be compensated for in a predictable manner. 5. Wirebonding A typical wirebond, as shown in Figure 2, is defined to include the entire length of wire used to make the electrical interconnection from the one component pad to another. The wire is attached to the component pad metallization using thermosonic bonding, which is the local application of ultrasonic energy and heat to the two materials being joined. A wirebond consists of three segments that are commonly known as the first bond, the second bond, and the wire loop. The test samples for this paper were prepared using a wedgebonding machine and thus wedgebonds will be described here. A ball bonding machine with similar loop control software, as described later, should also provide similar results. 112 Figure 2. Typical wedge-bonded wirebond found in a microwave MCM. When the constant length wirebonding program is used, the total amount of wire spooled out by the machine is fixed. The wire loop height will be high for short bonding distances and lower for longer bonding distances. This allows for wider acceptable tolerances for component placement accuracy. As the term suggests, the first bond is the first part of the wire that is bonded to the component pad. The wire will have a flattened (deformed) portion that will be approximately the length of the foot of the bonding tool chosen, and a short tail will be present at the starting end of the wire. The tail is caused by a small amount of excess wire under the bonding tool. The second bond is the part of the wire that is joined to the other component pad. The wire will also have a flatted area that will be the length of the bonding tool except that no tail will remain at this end. The wire loop is the wire joined between the first and second bond. The wirebonding parameters of gram force, amplitude of the ultrasonic energy applied, and time duration of ultrasonic energy application must be adjusted carefully to obtain strong bonds without excessive wire deformation, which will lead to weak or damaged bonds. 6. Test Samples Three test samples were assembled with varying gaps between a substrate and a 50-ohm resistor chip as shown in Figures 3 through Figure 8. The two components were assembled on a flat metal carrier using silver-filled, electrically conductive epoxy paste. The compensation capacitor on the substrate can be seen at the end of the 50-ohm microstrip transmission line. The distances between the wirebonding pads for the three samples were 350 µm (Figure 3), 430 µm (Figure 5), and 520 µm (Figure 7), respectively. The wire used was a 17.8 µm diameter gold wire. Computer simulation showed that a wire length of 685 ± 50 µm would provide acceptable compensation. Wires were initially bonded to the three samples using the constant length looping parameters. After electrical test, the wires were removed and new wires were bonded with uncontrolled length wire looping parameters. Note that the same test pieces were intentionally International Microelectronics And Packaging Society

4 Constant Length Wirebonding for Microwave Multichip Modules used for both cases to avoid introducing other variables that could cause errors in the electrical measurements. Figure 3. Small gap sample with uncontrolled length wires. No loop in wirebond. Figure 6. Nominal gap sample with constant length wires. Slightly lower loop than Figure 4. Figure 7. Large gap sample with uncontrolled length wires. Very slight loop seen. Figure 4. Small gap sample with constant length wires. High loop in wirebond. Figure 8. Large gap sample with constant length wires. Small loop still present. The thin-film resistor chip was mounted such that the gap between it and the substrate is different on each sample. The Figure 5. Nominal gap sample uncontrolled length wires. distance between the bonding pads was 350 µm (13.5 mils) Almost straight wire. on the smallest size gap sample (Fig. 3 and 4), 430 µm (17.0 mils) on the nominal size gap sample (Fig. 5 and 6), and 520 µm (20.5 mils) on the largest size gap sample (Fig. 7 and 8). The wires in Figures 3, 5, and 7 all have different lengths and vary such that the small gap sample has the shortest wires and the wide gap sample has the longest wires. The wires in Figures 4, 6, and 8 were all bonded at a constant length of 685 µm (27.0 mils). A small loop is desirable in the International Microelectronics And Packaging Society 113

5 Intl. Journal of Microcircuits and Electronic Packaging wirebond for mechanical stress relief and for performing nondestructive wirebond pull testing. 7. Constant Length Bonding The wirebonding was performed with a Palomar model V programmable automatic wedgebonder using the loop mode 3 constant length software option. This option allows the user to precisely control the wire length by controlling the movement of the bonding tool tip as shown in Figure 9. In theory, a constant length wire will be bonded because the machine is designed to spool out the same amount of wire each time for each programmed wire in the MCM. After the first bond is made, the bonding tool will move up and over (a user-programmed amount) before the clamp closes. Once the clamp is closed, no additional wire spools out as the bonding tool continues to travel to the second bonding surface as shown in Figure 10. The minimum and maximum acceptable distances between first bond and second bond will vary depending on the desired wirebond length. Table 2 shows typical distance variations that are acceptable for a fixed wire length. Wirebonds that were made outside this range had inconsistencies in length or breakage of the wire. When the distance is too small compared to the total wire length, the loop may become unusually tall and some of the wire will be forced back into the bonding tool during loop formation. Also, if the maximum distance begins to approach the desired wire length, the wire will be too flat and is likely to tear off at the heel of the first bond. Figure 10. A typical wirebonding tool at the portion of the automatic bonding cycle where the wire clamp has already closed and the tool is descending to the desired 2nd bond location. The clamp operates by pushing the wire against the back of the wirebonding tool, thereby, limiting the motion of the wire. In the open position, the clamp mechanism moves away from the tool forming a gap through which the wire can flow with minimal drag. Table 2. Recommended distances between component bonding pads for a proper wire loop formation. Wire Length 380 (15 ) 500 (20) 620 (25) 750 (30) 880 (35) 1000 (40) Nominal Distance 265 (10.5) 365 (14.4) 435 (17.1) 540 (21.2) 665 (26.2) 795 (31.3) Distance Tolerance ± 65 (±2.5) ± 85 (±3.3) ± 135 (±5.3) ± 160 (±6.3) ± 165 (±6.5) ± 165 (±6.5) It is difficult to measure the actual wire length of the wirebond. However in most cases, it is not as important to know the exact wire length as it is to be able to repeatedly get a certain length. Several iterations are usually needed to get the desired circuit performance. Wires can be bonded and the circuit electrically Figure 9. The bonding tool path on the Palomar 2470-V tested. The first wires can be removed and then new wires of wedgebonder can be precisely controlled using the loop mode different lengths can be bonded and again the circuit electrically 3 optional software program. Parameter A is the initial tested. This process can be repeated until the desired electrical distance that the tool moves up after making the 1st 0bond. circuit performance has been achieved and the wirebonding looping Parameter D is the angle at which the tool moves up. parameters have been developed. Using these determined Parameter B is a distance the tool moves back to form a parameters, additional modules can assembled with a high degree samll bend in the wire. Parameter C is the distance the tool of confidence that electrical performance will be as expected. will move toward the 2nd bond location before the clamp When a compensation network is used, the best results are obtained closes. During movements A, B, and C, wire have been by achieving a high loop for short bonding distances and allowed to freely spool out of the bottom of the tool. After low loops for longer bonding distances to maintain constant length the clamp is closed, however, no additional wire is fed out as wires. the tool continues through the bonding cycle to make the 2nd bond. 114 International Microelectronics And Packaging Society

6 Constant Length Wirebonding for Microwave Multichip Modules 8. Standard Wirebonding Standard wirebond looping programs do not give the user the same level of control that the constant length program provides. In standard looping mode, the loop height parameter is a percentage of the distance between the bonding pads. This results in low loops for short wires and tall loops for long wires, which is fine (and desirable) for low-frequency applications. To overcome this variation in loop heights, many modern microwave MCMs are assembled with a requirement for very tight tolerances for component placement accuracy. If the components are consistently attached with the same size gaps in every module the end result will be constant length wirebonds. This places an extra burden on the assembly process and adds extra inspection steps to insure placement accuracy better than ± 50 µm. The accumulated manufacturing dimensional tolerances of all the circuit components including the package, substrates, and MMICs make it very difficult to maintain such tight tolerances and adds cost due to lower assembly yields, and the resulting rework to remove/re-install components and re-inspecting the module. 9. Electrical Test Results Figure 11. Measured voltage reflection coefficient and percent difference from modeled performance of uncontrolled length wires. The modeled wire lengths were 685 m (27.0 mils). The uncontrolled length wires were bonded using a standard wire looping program. Figure 12 shows the effect of constant length wires on the measured voltage reflection coefficient and the difference from the modeled inductance value. The reflection coefficient was within 10% of the modeled figure for most of the frequency range. Again, due to limitations on test equipment, it was not possible to test at higher frequencies. However, these results do demonstrate that the flexible compensation network behavior can be very closely predicted. In order to evaluate the test samples, the voltage reflection coefficient was measured. This reflection coefficient is a quality measure of a microwave interconnection and ranges in value from 0 to 1. Zero reflection coefficient means that all of the microwave energy presented to the interface is transferred across. A reflection coefficient of 1 means that all the energy presented is reflected and none is transferred. A good reflection coefficient is considered less than 0.1. Since voltage squared is proportional to power, this means that 1% of the source power is reflected and 99% transferred. The test samples were installed in a coaxial test fixture and connected to a vector network analyzer to measure the voltage reflection coefficient over a frequency range of 0.2 to 6 GHz. The coaxial connector is included in the measured data and also in the model. Figure 11 shows the effect of uncontrolled length wires on the measured voltage reflection coefficient and the difference from the model, which assumed the wire length is equal to the longest wirebond length. As expected, these three samples varied considerably from the modeled performance. Two of the samples varied more than 25% over a large portion of the frequency range. It would have been desirable to test the samples at higher frequencies because these differences will become more pronounced as frequencies increase. However, due to limitations on test fixturing, the higher frequency testing could not be performed at this time. Figure 12. Measured voltage reflection coefficient and percent difference from modeled performance of constant length wires. The modeled wire lengths of 685 m (27.0 mils) were bonded between a microstrip transmission line with end compensation and a 50-ohm thin film chip resistor connected to substrate ground. Wires of this length were implemented using the constant length wirebonding software option on the same samples as used in Figure Implications for Future Antenna Systems The control of parasitic inductance through constant length wire bonding will have a significant impact on future wireless International Microelectronics And Packaging Society 115

7 Intl. Journal of Microcircuits and Electronic Packaging technology. For example, an active phased array antenna makes use of a number of antenna elements with a small transmitter and receiver immediately adjacent to the antenna element. Controlling the electrical delay, or phase shift, through the active elements with a phase shift control circuit in each element, one can create an electrical delay pattern across the antenna face 8. This delay pattern enhances the performance of the antenna in a desired direction while suppressing the performance in all other directions. Changing the delay pattern by electronically controlling the phase shifter in each element instantly changes the direction of the antenna. In addition to military radar and satellite communications applications, this technology can greatly enhance commercial communications systems. For instance, a cellular telephone operator could rapidly adapt the performance of the tower antenna in response to traffic increases and decreases in different directions. This performance optimization would permit higher traffic density without additional towers. The implementation of this technology in commercial systems awaits reductions in the cost of manufacturing an antenna with tens to hundreds of active elements. The researchers recently fabricated a number of MMIC transmit and receive elements and assembled them into a small array to demonstrate the feasibility of a low-cost active array for a microwave communication system. The transmit modules are shown in Figure 13. An important performance parameter in active array antennas is the variation in amplitude and electrical delay, or insertion phase, from unit to unit. Any variation between array elements must be measured and an appropriate correction made that is unique for each element when its phase shifter is set. Any amplitude variations must be corrected with an attenuation control circuit in the module. Failure to do so will result in inferior antenna performance. The authors utilized the constant length feature for all wire bonds in the RF path of these modules that are shown in Figure 14. The resulting uniformity of these modules is shown in Figure 15. The root mean square (RMS), or 1 sigma, gain and phase variation in degrees between 11 transmit modules, measured at each of 401 frequency points is plotted. The insertion phase variation was nominally 15 degrees RMS over the 4 to 6 GHz frequency range. The accompanying amplitude variation was approximately 0.75 db RMS. Similar uniformity was realized for the receive modules. Figure 14. Gaps betweem MMIC die can vary when constant length wirebonding program is used. Figure 15. Electrical test results of 11 transmit modules designed and assembled at the John Hopkins University Applied Physics Laboratory. The RMS gain and phase variations were measured to be well below the values needed for acceptable active antenna array performance. Therefore, an individual attenuation control circuit in each module is not needed and phase correction for each antenna element was not necessary. These electrical variations are well below the values needed for acceptable active phased array antenna performance. The implication for cost savings is significant in that an attenuation control circuit in each module is not needed. Further, the tedious tasks of measuring the amplitude and phase variation of each module and the bookkeeping of the resulting correction factor can be eliminated. Also, the added memory and computation associated with element correction in the antenna controller would not be needed. The use of constant length wire bonds was directly responsible for the improvement in performance uniformity of these modules and thus has the potential to significantly lower the cost of future active phased array antenna systems. 11. Conclusions Figure 13. A microwave transmit module fabricated to The data presented in this publication demonstrates that with demonstrate feasibility of a low-cost active array for a the use of constant length wirebonding techniques, a flexible compensation network can be designed into a microwave MCM to shipboard microwave communication system. 116 International Microelectronics And Packaging Society

8 Constant Length Wirebonding for Microwave Multichip Modules improve the quality of the signal transfer across a typical interconnection. A wirebond can be treated as a fixed value inductor in the electrical model used for computer simulation of the interconnection. Furthermore, significant cost savings can be realized in the fabrication of modules due to less complicated circuitry in module, higher assembly yields due to relaxed component placement accuracy, and less electrical test data manipulation. 12. Future Work in Microwave Wirebonding Additional work in the microwave wirebonding is planned in the coming year particularly in the area of higher frequency effects. The researchers will further analyze wirebond geometry changes and repeatability of the constant length wirebonding process. The microwave probe station and the spectrum analyzer are being upgraded to enable testing through 26 GHz in the near term. (eventually plan to have test capability through 50 GHz.) Acknowledgment The authors would like to acknowledge the support of Katherine J. Mach of APL s Electronic Services Group for sample preparation and David M. Verven of APL s Advanced Systems Development Group for electrical test. References 5. F. Alimneti, et al., Quasi Static Analysis of Microstrip Bondwire Interconnects, Proceedings of the 1995 IEEE-Microwave Theory and Techniques Digest, pp , Steve Nelson, Optimum Microstrip Interconnects, Proceedings of the 1991 IEEE Microwave Theory and Techniques Digest, pp , Sang-Ki Yun, Parasitic Impedance Analysis of Double Bonding Wires for High Frequency Integrated Circuit Packaging, IEEE Microwave and Guided Wave Letters, Vol. 5, No. 9, pp , September Bruce Kopp, et al, Transmit/Receive Module Packaging: Electrical Design, Johns Hopkins Technical Digest, Vol. 20, No. 1, pp , About the authors S. John Lehtonen received a BSEE from Florida Atlantic University in He has 15 years of experience working in the microelectronics packaging field. Mr. Lehtonen is a Senior Staff Engineer with the Johns Hopkins University Applied Physics Laboratory where he is involved with the design and fabrication of high-reliability microelectronics for military and space applications. His current interests are assembly process development for a variety of electronic miniaturization efforts which include microwave MCMs, chip-on-board, indium bump bonding, and flip chip technology. His address is john.lehtonen@jhuapl.edi Craig Moore received the B.E.E. and M.S. Degrees from Cornell University and has over 35 years experience in microwave circuit and system design and measurement. Currently, Mr. Moore is a principal staff engineer with Johns Hopkins University Applied Physics Laboratory, where he is involved with new technology for future military radar and communications systems. His address is craig.moore@jhuapl.ed 1. David K. Cheng, Field and Wave Electromagnetics, Addison-Wesley Publishing Company, Reading, Massachusetts, Chapter 9, pg. 370, Wolfgang Menzel, Interconnects and Packaging of Millimeter Wave Circuits, IEEE Microwave Theory and Techniques Newsletter, No. 149, pp , Summer G. Baumann, et al., 51 GHz Front-end with Flip Chip and Wire Bond Interconnections from GaAs MMICs to a Planar Patch Antenna, Proceedings of the 1995 IEEE Microwave Theory and Techniques Digest, pp , T. Krems, et al., Millimeter-Wave Performance of Chip Interconnections Using Wire Bonding and Flip Chip, Proceedings of the 1996 IEEE Microwave Theory and Techniques Digest, pp , International Microelectronics And Packaging Society 117

ENGAT00000 to ENGAT00010

ENGAT00000 to ENGAT00010 Wideband Fixed Attenuator Family, DIE, DC to 50 GHz ENGAT00000 / 00001 / 00002 / 00003 / 00004 / 00005 / 00006 / 00007 / 00008 / 00009 / 00010 Typical Applications ENGAT00000 to ENGAT00010 Features Space

More information

Flip-Chip for MM-Wave and Broadband Packaging

Flip-Chip for MM-Wave and Broadband Packaging 1 Flip-Chip for MM-Wave and Broadband Packaging Wolfgang Heinrich Ferdinand-Braun-Institut für Höchstfrequenztechnik (FBH) Berlin / Germany with contributions by F. J. Schmückle Motivation Growing markets

More information

Chapter 2. Literature Review

Chapter 2. Literature Review Chapter 2 Literature Review 2.1 Development of Electronic Packaging Electronic Packaging is to assemble an integrated circuit device with specific function and to connect with other electronic devices.

More information

High Isolation GaAs MMIC Doubler

High Isolation GaAs MMIC Doubler Page 1 The is a balanced MMIC doubler covering 16 to 48 GHz on the output. It features superior isolations and harmonic suppressions across a broad bandwidth in a highly miniaturized form factor. Accurate,

More information

Gain Slope issues in Microwave modules?

Gain Slope issues in Microwave modules? Gain Slope issues in Microwave modules? Physical constraints for broadband operation If you are a microwave hardware engineer you most likely have had a few sobering experiences when you test your new

More information

Non-Linear Transmission Line Comb Generator

Non-Linear Transmission Line Comb Generator Page 1 The is a GaAs Schottky diode based non-linear transmission line comb generator. It is optimized for at input frequencies of 1 16 GHz and minimum input drive powers of +16 dbm. Harmonic content is

More information

Passive MMIC 26-40GHz Bandpass Filter

Passive MMIC 26-40GHz Bandpass Filter Page 1 The is a passive MMIC bandpass filter. It is a low loss integrated filter that passes the Ka (26-40GHz) band. Passive GaAs MMIC technology allows production of smaller filter constructions that

More information

ENGDA Wideband Distributed Amplifier, DIE, 0.8 to 20 GHz ENGDA Features. Typical Applications. Description. Functional Block Diagram

ENGDA Wideband Distributed Amplifier, DIE, 0.8 to 20 GHz ENGDA Features. Typical Applications. Description. Functional Block Diagram Typical Applications ENGDA00072 Wideband Distributed Amplifier, DIE, 0.8 to 20 GHz ENGDA00072 Features Military EW and SIGINT Receiver or Transmitter Telecom Infrastructure Space Hybrids Test and Measurement

More information

Passive MMIC 30GHz Equalizer

Passive MMIC 30GHz Equalizer Page 1 The is a passive MMIC equalizer. It is a positive gain slope equalizer designed to pass DC to 30GHz. Equalization can be applied to reduce low pass filtering effects in both RF/microwave and high

More information

Antenna Theory and Design

Antenna Theory and Design Antenna Theory and Design Antenna Theory and Design Associate Professor: WANG Junjun 王珺珺 School of Electronic and Information Engineering, Beihang University F1025, New Main Building wangjunjun@buaa.edu.cn

More information

MMIC: Introduction. Evangéline BENEVENT. Università Mediterranea di Reggio Calabria DIMET

MMIC: Introduction. Evangéline BENEVENT. Università Mediterranea di Reggio Calabria DIMET Evangéline BENEVENT Università Mediterranea di Reggio Calabria DIMET 1 Evolution of electronic circuits: high frequency and complexity Moore s law More than Moore System-In-Package System-On-Package Applications

More information

GaAs MMIC Non-Linear Transmission Line. Description Package Green Status

GaAs MMIC Non-Linear Transmission Line. Description Package Green Status GaAs MMIC Non-Linear Transmission Line NLTL-6273 1. Device Overview 1.1 General Description NLTL-6273 is a MMIC non-linear transmission line (NLTL) based comb generator. This NLTL offers excellent phase

More information

HMC985A. attenuators - analog - Chip. GaAs MMIC VOLTAGE - VARIABLE ATTENUATOR, GHz. Features. Typical Applications. General Description

HMC985A. attenuators - analog - Chip. GaAs MMIC VOLTAGE - VARIABLE ATTENUATOR, GHz. Features. Typical Applications. General Description Typical Applications The is ideal for: Point-to-Point Radio VSAT Radio Test Instrumentation Microwave Sensors Military, ECM & Radar Functional Diagram v2.917 ATTENUATOR, 2-5 GHz Features Wide Bandwidth:

More information

A 6 : 1 UNEQUAL WILKINSON POWER DIVIDER WITH EBG CPW

A 6 : 1 UNEQUAL WILKINSON POWER DIVIDER WITH EBG CPW Progress In Electromagnetics Research Letters, Vol. 8, 151 159, 2009 A 6 : 1 UNEQUAL WILKINSON POWER DIVIDER WITH EBG CPW C.-P. Chang, C.-C. Su, S.-H. Hung, and Y.-H. Wang Institute of Microelectronics,

More information

A passive circuit based RF optimization methodology for wireless sensor network nodes. Article (peer-reviewed)

A passive circuit based RF optimization methodology for wireless sensor network nodes. Article (peer-reviewed) Title Author(s) Editor(s) A passive circuit based RF optimization methodology for wireless sensor network nodes Zheng, Liqiang; Mathewson, Alan; O'Flynn, Brendan; Hayes, Michael; Ó Mathúna, S. Cian Wu,

More information

A Miniaturized Multi-Channel TR Module Design Based on Silicon Substrate

A Miniaturized Multi-Channel TR Module Design Based on Silicon Substrate Progress In Electromagnetics Research Letters, Vol. 74, 117 123, 2018 A Miniaturized Multi-Channel TR Module Design Based on Silicon Substrate Jun Zhou 1, 2, *, Jiapeng Yang 1, Donglei Zhao 1, and Dongsheng

More information

SDA-3000 GaAs Distributed Amplifier

SDA-3000 GaAs Distributed Amplifier GaAs Distributed Amplifier RFMD s SDA-3000 is a directly coupled (DC) GaAs microwave monolithic integrated circuit (MMIC) driver amplifier die designed for use as a Mach Zehnder Modulated (MZM) laser driver

More information

GaAs MMIC Millimeter Wave Doubler. Description Package Green Status

GaAs MMIC Millimeter Wave Doubler. Description Package Green Status GaAs MMIC Millimeter Wave Doubler MMD-2060L 1. Device Overview 1.1 General Description The MMD-2060L is a MMIC millimeter wave doubler fabricated with GaAs Schottky diodes. This operates over a guaranteed

More information

Features. = +25 C, 50 Ohm System

Features. = +25 C, 50 Ohm System Typical Applications Features This is ideal for: Low Insertion Loss:.5 db Point-to-Point Radios Point-to-Multi-Point Radios Military Radios, Radar & ECM Test Equipment & Sensors Space Functional Diagram

More information

Integration Techniques for MMICs and Chip Devices in LTCC Multichip Modules for Radio Frequencies

Integration Techniques for MMICs and Chip Devices in LTCC Multichip Modules for Radio Frequencies Integration Techniques for MMICs and Chip Devices in LTCC Multichip Modules for Radio Frequencies R. Kulke *, W. Simon *, M. Rittweger *, I. Wolff *, S. Baker +, R. Powell + and M. Harrison + * Institute

More information

GaAs MMIC Millimeter Wave Doubler. Description Package Green Status

GaAs MMIC Millimeter Wave Doubler. Description Package Green Status GaAs MMIC Millimeter Wave Doubler MMD-3580L 1. Device Overview 1.1 General Description The MMD-3580L is a MMIC millimeter wave doubler fabricated with GaAs Schottky diodes. This operates over a guaranteed

More information

HMC-AUH232 MICROWAVE & OPTICAL DRIVER AMPLIFIERS - CHIP. GaAs HEMT MMIC MODULATOR DRIVER AMPLIFIER, DC - 43 GHz. Typical Applications.

HMC-AUH232 MICROWAVE & OPTICAL DRIVER AMPLIFIERS - CHIP. GaAs HEMT MMIC MODULATOR DRIVER AMPLIFIER, DC - 43 GHz. Typical Applications. DRIVER AMPLIFIER, DC - 3 GHz Typical Applications This is ideal for: 0 Gb/s Lithium Niobate/ Mach Zender Fiber Optic Modulators Broadband Gain Block for Test & Measurement Equipment Broadband Gain Block

More information

CHAPTER 4. Practical Design

CHAPTER 4. Practical Design CHAPTER 4 Practical Design The results in Chapter 3 indicate that the 2-D CCS TL can be used to synthesize a wider range of characteristic impedance, flatten propagation characteristics, and place passive

More information

Features. The HMC985 is ideal for: = +25 C, See Test Conditions. Parameter Condition Min. Typ. Max. Units db. Output Return Loss 13 db

Features. The HMC985 is ideal for: = +25 C, See Test Conditions. Parameter Condition Min. Typ. Max. Units db. Output Return Loss 13 db Typical Applications The is ideal for: Point-to-Point Radio Vsat Radio Test Instrumentation Microwave Sensors Military, ECM & Radar Functional Diagram v.211 attenuator, 2-5 GHz Features Wide Bandwidth:

More information

MMIC 18-42GHz Quadrature Hybrid

MMIC 18-42GHz Quadrature Hybrid MMIC 18-42GHz Quadrature Hybrid MQH-1842 1 Device Overview 1.1 General Description The MQH-1842 is a MMIC 18GHz 42 GHz quadrature (90 ) hybrid. Passive GaAs MMIC technology allows production of smaller

More information

Features. Parameter Min. Typ. Max. Units. Frequency Range 8 12 GHz Insertion Loss* 5 7 db. Input Return Loss* 10 db

Features. Parameter Min. Typ. Max. Units. Frequency Range 8 12 GHz Insertion Loss* 5 7 db. Input Return Loss* 10 db v2.29 HMC4 Typical Applications The HMC4 is ideal for: EW Receivers Weather & Military Radar Satellite Communications Beamforming Modules Features Low RMS Phase Error: Low Insertion Loss: 6. db Excellent

More information

insert link to the published version of your paper

insert link to the published version of your paper Citation Niels Van Thienen, Wouter Steyaert, Yang Zhang, Patrick Reynaert, (215), On-chip and In-package Antennas for mm-wave CMOS Circuits Proceedings of the 9th European Conference on Antennas and Propagation

More information

Features. = 25 C, IF = 3 GHz, LO = +16 dbm

Features. = 25 C, IF = 3 GHz, LO = +16 dbm mixers - i/q mixers / irm - CHIP Typical Applications This is ideal for: Point-to-Point Radios Test & Measurement Equipment SATCOM Radar Functional Diagram Features Wide IF Bandwidth: DC - 5 GHz High Image

More information

UMS User guide for bare dies GaAs MMIC. storage, pick & place, die attach and wire bonding

UMS User guide for bare dies GaAs MMIC. storage, pick & place, die attach and wire bonding UMS User guide for bare dies GaAs MMIC storage, pick & place, die attach and wire bonding Ref. : AN00014097-07 Apr 14 1/10 Specifications subject to change without notice United Monolithic Semiconductors

More information

Fuzz Button interconnects at microwave and mm-wave frequencies

Fuzz Button interconnects at microwave and mm-wave frequencies Fuzz Button interconnects at microwave and mm-wave frequencies David Carter * The Connector can no Longer be Ignored. The connector can no longer be ignored in the modern electronic world. The speed of

More information

Tips for Increasing Yields when Wire Bonding Small MESA Chips TECH BRIEF

Tips for Increasing Yields when Wire Bonding Small MESA Chips TECH BRIEF Tips for Increasing Yields when Wire Bonding Small MESA Chips TECH BRIEF Abstract: lorem ipsum dolor sit amet Small MESA devices have posed a number of wire-bonding challenges, which have required advancements

More information

Design of Compact Stacked-Patch Antennas in LTCC multilayer packaging modules for Wireless Applications

Design of Compact Stacked-Patch Antennas in LTCC multilayer packaging modules for Wireless Applications Design of Compact Stacked-Patch Antennas in LTCC multilayer packaging modules for Wireless Applications R. L. Li, G. DeJean, K. Lim, M. M. Tentzeris, and J. Laskar School of Electrical and Computer Engineering

More information

HMC650 TO HMC658 v

HMC650 TO HMC658 v HMC65 TO v1.38 WIDEBAND FIXED ATTENUATOR FAMILY, DC - 5 GHz HMC65 / 651 / 65 / 653 / 654 / 655 / 656 / 657 / 658 Typical Applications The HMC65 through are ideal for: Fiber Optics Microwave Radio Military

More information

TGP GHz 180 Phase Shifter. Primary Applications. Product Description. Measured Performance

TGP GHz 180 Phase Shifter. Primary Applications. Product Description. Measured Performance Amplitude Error (db) S21 (db) 10.0 9.0 8.0 7.0 6.0 5.0 4.0 3.0 2.0 1.0 Measured Performance 0.0 140 30 31 32 33 34 35 36 37 38 39 40 0-1 -2-3 -4-5 State 0-6 State 1-7 -8-9 -10 30 31 32 33 34 35 36 37 38

More information

Features. = +25 C, Vdd= +8V *

Features. = +25 C, Vdd= +8V * Typical Applications Features This is ideal for: Fiber Optic Modulator Driver Fiber Optic Photoreceiver Post Amplifi er Gain Block for Test & Measurement Equipment Point-to-Point/Point-to-Multi-Point Radio

More information

Methodology for MMIC Layout Design

Methodology for MMIC Layout Design 17 Methodology for MMIC Layout Design Fatima Salete Correra 1 and Eduardo Amato Tolezani 2, 1 Laboratório de Microeletrônica da USP, Av. Prof. Luciano Gualberto, tr. 3, n.158, CEP 05508-970, São Paulo,

More information

Microcircuit Electrical Issues

Microcircuit Electrical Issues Microcircuit Electrical Issues Distortion The frequency at which transmitted power has dropped to 50 percent of the injected power is called the "3 db" point and is used to define the bandwidth of the

More information

GHz Voltage Variable Attenuator (Absorptive)

GHz Voltage Variable Attenuator (Absorptive) Rev.. February 27.5-2.GHz Voltage Variable Attenuator (Absorptive) Features Single Positive Voltage Control: to +5V. 3dB Attenuation Range Low Insertion Loss I/O VSWR

More information

Introduction: Planar Transmission Lines

Introduction: Planar Transmission Lines Chapter-1 Introduction: Planar Transmission Lines 1.1 Overview Microwave integrated circuit (MIC) techniques represent an extension of integrated circuit technology to microwave frequencies. Since four

More information

MMIC 2-18GHz 90 Splitter / Combiner. Green Status. Refer to our website for a list of definitions for terminology presented in this table.

MMIC 2-18GHz 90 Splitter / Combiner. Green Status. Refer to our website for a list of definitions for terminology presented in this table. MMIC 2-18GHz 90 Splitter / Combiner MQS-0218 1 Device Overview 1.1 General Description The MQS-0218 is a MMIC 2GHz 18GHz 90 splitter/combiner. Wire bondable 50Ω terminations are available on-chip. Passive

More information

Design and Layout of a X-Band MMIC Power Amplifier in a Phemt Technology

Design and Layout of a X-Band MMIC Power Amplifier in a Phemt Technology Design and Layout of a X-Band MMIC Power Amplifier in a Phemt Technology Renbin Dai, and Rana Arslan Ali Khan Abstract The design of Class A and Class AB 2-stage X band Power Amplifier is described in

More information

Features. Parameter Min. Typ. Max. Units. Frequency Range 3 6 GHz Insertion Loss* db. Input Return Loss* 12 db

Features. Parameter Min. Typ. Max. Units. Frequency Range 3 6 GHz Insertion Loss* db. Input Return Loss* 12 db Typical Applications The is ideal for: EW Receivers Weather & Military Radar Satellite Communications Beamforming Modules Phase Cancellation Functional Diagram Features Low RMS Phase Error: Low Insertion

More information

Customised Pack Sizes / Qtys. Support for all industry recognised supply formats: o o o. Waffle Pack Gel Pak Tape & Reel

Customised Pack Sizes / Qtys. Support for all industry recognised supply formats: o o o. Waffle Pack Gel Pak Tape & Reel Design Assistance Assembly Assistance Die handling consultancy Hi-Rel die qualification Hot & Cold die probing Electrical test & trimming Customised Pack Sizes / Qtys Support for all industry recognised

More information

9-10 GHz GaAs MMIC Core Chip

9-10 GHz GaAs MMIC Core Chip 9-10 GHz GaAs MMIC Core Chip Features Functional Diagram Frequency Range: 9GHz 10GHz Tx Small Signal Gain: 28dB Rx Small Signal Gain: 4dB Tx Output P1dB : 22dBm Tx Output Psat : 23dBm Input Return Loss

More information

Silicon Interposers enable high performance capacitors

Silicon Interposers enable high performance capacitors Interposers between ICs and package substrates that contain thin film capacitors have been used previously in order to improve circuit performance. However, with the interconnect inductance due to wire

More information

MMIC GHz Quadrature Hybrid

MMIC GHz Quadrature Hybrid MMIC 3.5-10GHz Quadrature Hybrid MQH-3R510 1 Device Overview 1.1 General Description The MQH-3R510 is a MMIC 3.5 GHz 10 GHz quadrature (90 ) hybrid. Wire bondable 50Ω terminations are available on-chip.

More information

FEATURES DESCRIPTION ABSOLUTE MAXIMUM RATINGS. T AMB = +25 C ( Unless otherwise specified )

FEATURES DESCRIPTION ABSOLUTE MAXIMUM RATINGS. T AMB = +25 C ( Unless otherwise specified ) Monolithic PIN SP5T Diode Switch FEATURES Ultra Broad Bandwidth: 50MHz to 26GHz 1.0 db Insertion Loss 30 db Isolation at 20GHz Reliable. Fully Monolithic Glass Encapsulated Construction DESCRIPTION The

More information

Features OBSOLETE. = +25 C, With 0/-5V Control, 50 Ohm System. DC - 10 GHz DC - 6 GHz DC - 15 GHz. DC - 6 GHz DC - 15 GHz

Features OBSOLETE. = +25 C, With 0/-5V Control, 50 Ohm System. DC - 10 GHz DC - 6 GHz DC - 15 GHz. DC - 6 GHz DC - 15 GHz v03.1203 Typical Applications Broadband switch for applications: Fiber Optics Microwave Radio Military & Space Test Equipment VSAT Functional Diagram Features High Isolation: >50 @ 10 GHz Low Insertion

More information

GaAs MMIC High Dynamic Range Mixer. Description Package Green Status

GaAs MMIC High Dynamic Range Mixer. Description Package Green Status GaAs MMIC High Dynamic Range Mixer MT3L-0113H 1. Device Overview 1.1 General Description MT3L-0113H is a GaAs MMIC triple balanced mixer with high dynamic range and low conversion loss. This mixer belongs

More information

Experimental Analysis of Via-hole-ground Effects in Microwave Integrated Circuits at X-band

Experimental Analysis of Via-hole-ground Effects in Microwave Integrated Circuits at X-band h y POSTER 215, PRAGUE MAY 14 1 Experimental Analysis of Via-hole-ground Effects in Microwave Integrated Circuits at X-band Ghulam Mustafa Khan Junejo Microwave Electronics Lab, University of Kassel, Kassel,

More information

RF Board Design for Next Generation Wireless Systems

RF Board Design for Next Generation Wireless Systems RF Board Design for Next Generation Wireless Systems Page 1 Introduction Purpose: Provide basic background on emerging WiMax standard Introduce a new tool for Genesys that will aide in the design and verification

More information

Data Sheet. AMMC GHz Amplifier. Description. Features. Applications

Data Sheet. AMMC GHz Amplifier. Description. Features. Applications AMMC - 518-2 GHz Amplifier Data Sheet Chip Size: 92 x 92 µm (.2 x.2 mils) Chip Size Tolerance: ± 1µm (±.4 mils) Chip Thickness: 1 ± 1µm (4 ±.4 mils) Pad Dimensions: 8 x 8 µm (.1 x.1 mils or larger) Description

More information

Features. = +25 C, Vdd = 5V

Features. = +25 C, Vdd = 5V v1.1 AMPLIFIER, 3. - 7. GHz Typical Applications The HMC39A is ideal for: Point-to-Point Radios VSAT LO Driver for HMC Mixers Military EW, ECM, C 3 I Space Functional Diagram Features Gain: 17. db Noise

More information

GaAs MMIC Double Balanced Mixer. Description Package Green Status

GaAs MMIC Double Balanced Mixer. Description Package Green Status GaAs MMIC Double Balanced Mixer MM1-0212S 1. Device Overview 1.1 General Description MM1-0212S is a highly linear GaAs MMIC double balanced mixer. MM1-0212S is a low frequency, high linearity S band mixer

More information

HMC-APH596 LINEAR & POWER AMPLIFIERS - CHIP. GaAs HEMT MMIC MEDIUM POWER AMPLIFIER, GHz. Typical Applications. Features

HMC-APH596 LINEAR & POWER AMPLIFIERS - CHIP. GaAs HEMT MMIC MEDIUM POWER AMPLIFIER, GHz. Typical Applications. Features Typical Applications Features This is ideal for: Point-to-Point Radios Point-to-Multi-Point Radios VSAT Military & Space Functional Diagram Output IP: + dbm P1dB: +24 dbm Gain: 17 db Supply Voltage: +5V

More information

Features. Parameter Frequency (GHz) Min. Typ. Max. Units GHz GHz. Attenuation Range GHz 31 db

Features. Parameter Frequency (GHz) Min. Typ. Max. Units GHz GHz. Attenuation Range GHz 31 db v1.511 1. LSB GaAs MMIC 5-BIT DIGITAL ATTENUATOR,.1-4 GHz Typical Applications The is ideal for: Fiber Optics & Broadband Telecom Microwave Radio & VSAT Military Radios, Radar & ECM Space Applications

More information

Equivalent Circuit Model Overview of Chip Spiral Inductors

Equivalent Circuit Model Overview of Chip Spiral Inductors Equivalent Circuit Model Overview of Chip Spiral Inductors The applications of the chip Spiral Inductors have been widely used in telecommunication products as wireless LAN cards, Mobile Phone and so on.

More information

Wire Bond Technology The Great Debate: Ball vs. Wedge

Wire Bond Technology The Great Debate: Ball vs. Wedge Wire Bond Technology The Great Debate: Ball vs. Wedge Donald J. Beck, Applications Manager Alberto C. Perez, Hardware and Applications Engineer Palomar Technologies, Inc. 2728 Loker Avenue West Carlsbad,

More information

The shunt capacitor is the critical element

The shunt capacitor is the critical element Accurate Feedthrough Capacitor Measurements at High Frequencies Critical for Component Evaluation and High Current Design A shielded measurement chamber allows accurate assessment and modeling of low pass

More information

Features. Parameter Frequency (GHz) Min. Typ. Max. Units. Attenuation Range GHz 31 db. All States db db. 0.

Features. Parameter Frequency (GHz) Min. Typ. Max. Units. Attenuation Range GHz 31 db. All States db db. 0. Typical Applications The is ideal for: Features 1. LSB Steps to 31 Fiber Optics & Broadband Telecom Microwave Radio & VSAT Military Radios, Radar & ECM Space Applications Functional Diagram 11 3 4 5 6

More information

MA4AGSW2. AlGaAs SP2T PIN Diode Switch. MA4AGSW2 Layout. Features. Description. Absolute Maximum Ratings TA = +25 C (Unless otherwise specified)

MA4AGSW2. AlGaAs SP2T PIN Diode Switch. MA4AGSW2 Layout. Features. Description. Absolute Maximum Ratings TA = +25 C (Unless otherwise specified) AlGaAs SP2T PIN Diode Switch Features Ultra Broad Bandwidth: 5 MHz to 5 GHz Functional bandwidth : 5 MHz to 7 GHz.7 db Insertion Loss, 33 db Isolation at 5 GHz Low Current consumption: -1 ma for Low Loss

More information

2005 Modelithics Inc.

2005 Modelithics Inc. Precision Measurements and Models You Trust Modelithics, Inc. Solutions for RF Board and Module Designers Introduction Modelithics delivers products and services to serve one goal accelerating RF/microwave

More information

Z-Wrap-110 Loss 31 July 01

Z-Wrap-110 Loss 31 July 01 Z-Wrap-11 Loss 31 July 1 Z-Axis J. Sortor TEST METHOD: To accurately measure complex impedance, it is required that the network analyzer be calibrated up to the phase plane of the unit under test (UUT).

More information

WIDE-BAND circuits are now in demand as wide-band

WIDE-BAND circuits are now in demand as wide-band 704 IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, VOL. 54, NO. 2, FEBRUARY 2006 Compact Wide-Band Branch-Line Hybrids Young-Hoon Chun, Member, IEEE, and Jia-Sheng Hong, Senior Member, IEEE Abstract

More information

Features. = +25 C, 50 Ohm System. Return Loss (Input and Output) 5-18 GHz 8 db

Features. = +25 C, 50 Ohm System. Return Loss (Input and Output) 5-18 GHz 8 db v.89 4 ANALOG PHASE SHIFTER Typical Applications The is ideal for: Fiber Optics Military Test Equipment Features Wide Bandwidth: Phase Shift: >4 Single Positive Voltage Control Small Size: 2. x 1.6 x.1

More information

Features. = +25 C, Vdd= 5V, Idd= 60 ma*

Features. = +25 C, Vdd= 5V, Idd= 60 ma* Typical Applications The HMC63 is ideal for: Telecom Infrastructure Microwave Radio & VSAT Military & Space Test Instrumentation Fiber Optics Functional Diagram v.67 Vgg2: Optional Gate Bias for AGC HMC63

More information

SMA Self-Fixture End Launch Connectors

SMA Self-Fixture End Launch Connectors SMA Self-Fixture End Launch Connectors INTRODUCTION / APPLICATIONS Applications for these connectors include: An ideal solution for design engineers who are obligated to cut manufacturing costs and complexity

More information

MIL-STD-883E METHOD BOND STRENGTH (DESTRUCTIVE BOND PULL TEST)

MIL-STD-883E METHOD BOND STRENGTH (DESTRUCTIVE BOND PULL TEST) BOND STRENGTH (DESTRUCTIVE BOND PULL TEST) 1. PURPOSE. The purpose of this test is to measure bond strengths, evaluate bond strength distributions, or determine compliance with specified bond strength

More information

Features. = +25 C, With Vdd = +5V & Vctl = 0/+5V (Unless Otherwise Noted)

Features. = +25 C, With Vdd = +5V & Vctl = 0/+5V (Unless Otherwise Noted) Typical Applications The is ideal for: Fiber Optics & Broadband Telecom Microwave Radio & VSAT Military Radios, Radar, & ECM Space Applications Functional Diagram v2.97.5 db LSB GaAs MMIC 6-BIT DIGITAL

More information

Features. = +25 C, 50 ohm system. DC - 12 GHz: DC - 20 GHz: DC - 12 GHz: GHz: ns ns Input Power for 0.25 db Compression (0.

Features. = +25 C, 50 ohm system. DC - 12 GHz: DC - 20 GHz: DC - 12 GHz: GHz: ns ns Input Power for 0.25 db Compression (0. 1 Typical Applications This attenuator is ideal for use as a VVA for DC - 2 GHz applications: Point-to-Point Radio VSAT Radio Functional Diagram v4.18 ATTENUATOR, DC - 2 GHz Features Wide Bandwidth: DC

More information

Features. Applications. Symbol Parameters/Conditions Units Min. Max.

Features. Applications. Symbol Parameters/Conditions Units Min. Max. AMMC - 622 6-2 GHz Low Noise Amplifier Data Sheet Chip Size: 17 x 8 µm (67 x 31. mils) Chip Size Tolerance: ± 1 µm (±.4 mils) Chip Thickness: 1 ± 1 µm (4 ±.4 mils) Pad Dimensions: 1 x 1 µm (4 ±.4 mils)

More information

Packaging and Embedded Components

Packaging and Embedded Components Packaging and Embedded Components Mater. Res. Soc. Symp. Proc. Vol. 969 2007 Materials Research Society 0969-W01-04 Investigation of Ultralow Loss Interconnection Technique for LTCC Based System-in- Package(SIP)

More information

TEL: FAX: v1.77 HMC64 Insertion Loss, Major States Only Normalized Loss, Major States Only 4 INSERTION LOSS (db)

TEL: FAX: v1.77 HMC64 Insertion Loss, Major States Only Normalized Loss, Major States Only 4 INSERTION LOSS (db) TEL:7-896822 FAX:7-876182 E-MAIL: szss2@16.com v1.77 HMC64 Typical Applications The HMC64 is ideal for: EW Receivers Weather & Military Radar Satellite Communications Beamforming Modules Phase Cancellation

More information

AMMC GHz Output x2 Active Frequency Multiplier

AMMC GHz Output x2 Active Frequency Multiplier AMMC-614 2 4 GHz Output x2 Active Frequency Multiplier Data Sheet Chip Size: Chip Size Tolerance: Chip Thickness: Pad Dimensions: 13 x 9 µm (1 x 3 mils) ±1 µm (±.4 mils) 1 ± 1 µm (4 ±.4 mils) 12 x 8 µm

More information

Traveling Wave Antennas

Traveling Wave Antennas Traveling Wave Antennas Antennas with open-ended wires where the current must go to zero (dipoles, monopoles, etc.) can be characterized as standing wave antennas or resonant antennas. The current on these

More information

The Design of E-band MMIC Amplifiers

The Design of E-band MMIC Amplifiers The Design of E-band MMIC Amplifiers Liam Devlin, Stuart Glynn, Graham Pearson, Andy Dearn * Plextek Ltd, London Road, Great Chesterford, Essex, CB10 1NY, UK; (lmd@plextek.co.uk) Abstract The worldwide

More information

Features. = +25 C, Vdd = +5V, Idd = 63 ma

Features. = +25 C, Vdd = +5V, Idd = 63 ma v2.213 LOW NOISE AMPLIFIER, 2-2 GHz Typical Applications Features The is ideal for: Test Instrumentation Microwave Radio & VSAT Military & Space Telecom Infrastructure Fiber Optics Functional Diagram Noise

More information

Chapter 2 Low-Cost High-Bandwidth Millimeter Wave Leadframe Packages

Chapter 2 Low-Cost High-Bandwidth Millimeter Wave Leadframe Packages Chapter 2 Low-Cost High-Bandwidth Millimeter Wave Leadframe Packages Eric A. Sanjuan and Sean S. Cahill Abstract As integrated circuit speeds and bandwidth needs increase, low-cost packaging and interconnect

More information

Features OUT E S T CODE. = +25 C, Vdd= 8V, Idd= 60 ma*

Features OUT E S T CODE. = +25 C, Vdd= 8V, Idd= 60 ma* E S T CODE E S T CODE v1.818 HMC6 AMPLIFIER, DC - 2 GHz Typical Applications Features The HMC6 is ideal for: Noise Figure: 2.5 db @ 1 GHz Telecom Infrastructure Microwave Radio & VSAT Military & Space

More information

THROUGHOUT the last several years, many contributions

THROUGHOUT the last several years, many contributions 244 IEEE ANTENNAS AND WIRELESS PROPAGATION LETTERS, VOL. 6, 2007 Design and Analysis of Microstrip Bi-Yagi and Quad-Yagi Antenna Arrays for WLAN Applications Gerald R. DeJean, Member, IEEE, Trang T. Thai,

More information

Electronic Packaging at Microwave and Millimeter-wave Frequencies Applications, Key Components, Design Issues

Electronic Packaging at Microwave and Millimeter-wave Frequencies Applications, Key Components, Design Issues Electronic Packaging at Microwave and Millimeter-wave Frequencies Applications, Key Components, Design Issues CLASTECH 2015 Outline Goal: Convey The Importance Of Electronic Packaging Considerations For

More information

Features. = +25 C, Vdd = +3V

Features. = +25 C, Vdd = +3V v.117 HMC Typical Applications Features The HMC is ideal for: Millimeterwave Point-to-Point Radios LMDS VSAT SATCOM Functional Diagram Excellent Noise Figure: db Gain: db Single Supply: +V @ 8 ma Small

More information

Fixed Attenuator Die YAT-D-SERIES. The Big Deal Excellent power handling, up to 2W Wideband, DC to 26.5 GHz Usable to 40 GHz

Fixed Attenuator Die YAT-D-SERIES. The Big Deal Excellent power handling, up to 2W Wideband, DC to 26.5 GHz Usable to 40 GHz Microwave Precision Fixed Attenuator Die 50Ω Up to 2W DC to 26.5 GHz YAT-D-SERIES The Big Deal Excellent power handling, up to 2W Wideband, DC to 26.5 GHz Usable to 40 GHz Unpackaged die form Product Overview

More information

Features OBSOLETE. = +25 C, 5 ma Bias Current

Features OBSOLETE. = +25 C, 5 ma Bias Current v3.34 Typical Applications The is suitable for: Wireless Local Loop LMDS & VSAT Point-to-Point Radios Test Equipment Functional Diagram Features Electrical Specifications, T A = +2 C, ma Bias Current Chip

More information

77 GHz VCO for Car Radar Systems T625_VCO2_W Preliminary Data Sheet

77 GHz VCO for Car Radar Systems T625_VCO2_W Preliminary Data Sheet 77 GHz VCO for Car Radar Systems Preliminary Data Sheet Operating Frequency: 76-77 GHz Tuning Range > 1 GHz Output matched to 50 Ω Application in Car Radar Systems ESD: Electrostatic discharge sensitive

More information

HMC-SDD112 SWITCHES - CHIP. GaAs PIN MMIC SPDT SWITCH GHz. Typical Applications. Features. General Description. Functional Diagram

HMC-SDD112 SWITCHES - CHIP. GaAs PIN MMIC SPDT SWITCH GHz. Typical Applications. Features. General Description. Functional Diagram Typical Applications This is ideal for: FCC E-Band Communication Systems Short-Haul / High Capacity Radios Automotive Radar Test & Measurement Equipment SATCOM Sensors Features Low Insertion Loss: 2 db

More information

2. Design Recommendations when Using EZRadioPRO RF ICs

2. Design Recommendations when Using EZRadioPRO RF ICs EZRADIOPRO LAYOUT DESIGN GUIDE 1. Introduction The purpose of this application note is to help users design EZRadioPRO PCBs using design practices that allow for good RF performance. This application note

More information

Features. DC - 2 GHz GHz Supply Current (Idd) 400 ma

Features. DC - 2 GHz GHz Supply Current (Idd) 400 ma Typical Applications The HMC637A is ideal for: Telecom Infrastructure Microwave Radio & VSAT Military & Space Test Instrumentation Fiber Optics Functional Diagram Features P1dB Output Power: +3.5 dbm Gain:

More information

Features. Gain: 15.5 db. = +25 C, Vdd = 5V

Features. Gain: 15.5 db. = +25 C, Vdd = 5V Typical Applications v2.97 Features AMPLIFIER, 3.5-7. GHz The HMC392 is ideal for: Gain: 5.5 db Point-to-Point Radios VSAT LO Driver for HMC Mixers Military EW, ECM, C 3 I Space Functional Diagram Noise

More information

Features. = +25 C, 50 ohm system. DC - 12 GHz: DC - 20 GHz: DC - 12 GHz: GHz: ns ns Input Power for 0.25 db Compression (0.

Features. = +25 C, 50 ohm system. DC - 12 GHz: DC - 20 GHz: DC - 12 GHz: GHz: ns ns Input Power for 0.25 db Compression (0. Typical Applications This attenuator is ideal for use as a VVA for DC - 2 GHz applications: Point-to-Point Radio VSAT Radio Functional Diagram v4.8 Features Wide Bandwidth: DC - 2 GHz Low Phase Shift vs.

More information

HMC465 AMPLIFIERS- DRIVERS & GAIN BLOCKS - CHIP. GaAs phemt MMIC MODULATOR DRIVER AMPLIFIER, DC - 20 GHz. Electrical Specifications, T A.

HMC465 AMPLIFIERS- DRIVERS & GAIN BLOCKS - CHIP. GaAs phemt MMIC MODULATOR DRIVER AMPLIFIER, DC - 20 GHz. Electrical Specifications, T A. v9.114 DRIVER AMPLIFIER, DC - 2 GHz Typical Applications The wideband driver is ideal for: OC192 LN/MZ Modulator Driver Telecom Infrastructure Test Instrumentation Military & Space Functional Diagram Features

More information

The Infinity Probe for On-Wafer Device Characterization and Modeling to 110 GHz

The Infinity Probe for On-Wafer Device Characterization and Modeling to 110 GHz Q & A Innovating Test Technologies The Infinity Probe for On-Wafer Device Characterization and Modeling to 110 GHz Why is this announcement important? INFINITY-QA-1102 Data subject to change without notice

More information

Features. = +25 C, 50 Ohm System, Vcc = 5V

Features. = +25 C, 50 Ohm System, Vcc = 5V Typical Applications Prescaler for DC to X Band PLL Applications: Satellite Communication Systems Fiber Optic Point-to-Point and Point-to-Multi-Point Radios VSAT Functional Diagram v4.9 Features DIVIDE-BY-8,

More information

Low Noise Amplifier Design Methodology Summary By Ambarish Roy, Skyworks Solutions, Inc.

Low Noise Amplifier Design Methodology Summary By Ambarish Roy, Skyworks Solutions, Inc. February 2014 Low Noise Amplifier Design Methodology Summary By Ambarish Roy, Skyworks Solutions, Inc. Low Noise Amplifiers (LNAs) amplify weak signals received by the antenna in communication systems.

More information

Features. = +25 C, Vdd = Vdd1 = Vdd2 = Vdd3 = Vdd4 = Vdd5 = +7V, Idd = 1200mA [1]

Features. = +25 C, Vdd = Vdd1 = Vdd2 = Vdd3 = Vdd4 = Vdd5 = +7V, Idd = 1200mA [1] v2.211 HMC949 Typical Applications The HMC949 is ideal for: Point-to-Point Radios Point-to-Multi-Point Radios VSAT & SATCOM Military & Space Functional Diagram Features Saturated Output Power: +5.5 dbm

More information

Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED

Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com THIS PAGE INTENTIONALLY LEFT BLANK v0.0907 HMC37 Typical Applications

More information

SAW Filter PCB Layout

SAW Filter PCB Layout SAW Filter PCB Layout by Allan Coon Director, Filter Product Marketing Murata Electronics North America, c. 1999 troduction The performance of surface acoustic wave (SAW) filters depends on a number of

More information

CMD282. DC-40 GHz 2-bit Digital Attenuator. Features. Functional Block Diagram. Description

CMD282. DC-40 GHz 2-bit Digital Attenuator. Features. Functional Block Diagram. Description Features Functional Block Diagram Ultra wideband performance Low insertion loss Wide attenuation range Small die size Description The CMD282 is negative controlled, wideband GaAs MMIC 2-bit digital attenuator

More information

Impact of etch factor on characteristic impedance, crosstalk and board density

Impact of etch factor on characteristic impedance, crosstalk and board density IMAPS 2012 - San Diego, California, USA, 45th International Symposium on Microelectronics Impact of etch factor on characteristic impedance, crosstalk and board density Abdelghani Renbi, Arash Risseh,

More information

Design of Duplexers for Microwave Communication Systems Using Open-loop Square Microstrip Resonators

Design of Duplexers for Microwave Communication Systems Using Open-loop Square Microstrip Resonators International Journal of Electromagnetics and Applications 2016, 6(1): 7-12 DOI: 10.5923/j.ijea.20160601.02 Design of Duplexers for Microwave Communication Charles U. Ndujiuba 1,*, Samuel N. John 1, Taofeek

More information