DATA SHEET. TDA5732M Low power VHF, UHF mixer/oscillator for TV and VCR 2-band tuners. Philips Semiconductors INTEGRATED CIRCUITS.

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1 INTEGRATED CIRCUITS DATA SHEET Low power VHF, UHF mixer/oscillator for TV and VCR 2-band tuners File under Integrated Circuits, IC Mar 22 Philips Semiconductors

2 FEATURES Balanced mixer with a common emitter input for band A 2-pin oscillator for band A Balanced mixer with a common base input for band C 4-pin oscillator for band C Local oscillator buffer output for external prescaler SAW filter preamplifier with a low output impedance of 7 Ω Band gap voltage stabilizer for oscillator stability Electronic band switch External IF filter connected between the mixer output and the IF amplifier input. DESCRIPTION The is a monolithic integrated circuit that performs VHF I, VHF III, hyperband and UHF mixer/oscillator functions in TV and VCR tuners. This low-power mixer/oscillator requires a power supply of V and is available in a very small package. The device gives the designer the capability to design an economical and physically small 2-band tuner. The tuner development time can be drastically reduced by using this device. APPLICATIONS 2-band TV tuners 2-band VCR tuners. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V P supply voltage.0 V I P supply current 0 ma f R frequency range band A MHz band C MHz N noise figure band A 9. db band C db V o IF output voltage band A; R L =7Ω; 8 dbµv 1% cross modulation band C; R L =7Ω; 8 dbm 1% cross modulation G v voltage gain band A; R L =7Ω 19 db band C; R L =7Ω 29 db ORDERING INFORMATION TYPE PACKAGE NUMBER NAME DESCRIPTION VERSION SSOP20 plastic shrink small outline package; 20 leads; body width 4.4 mm SOT Mar 22 2

3 BLOCK DIAGRAM band A input band C input RFGND local oscillator amplifier outputs V P IF inputs BAND A STAGE BAND C STAGE LOCAL OSCILLATOR AMPLIFIER DC STABILIZER MIXER MIXER BAND A OSCILLATOR BAND C OSCILLATOR ELECTRONIC BAND SWITCH IF AMPLIFIER band A oscillator tuned circuit GND band C oscillator tuned circuit band switch input IF ground IF output MBE391 Fig.1 Block diagram. 199 Mar 22 3

4 PINNING SYMBOL PIN DESCRIPTION AOSCIB 1 band A oscillator input base GND 2 ground (0 V) AOSCOC 3 band A oscillator output collector COSCIB1 4 band C oscillator input base 1 COSCOC1 band C oscillator output collector 1 COSCOC2 6 band C oscillator output collector 2 COSCIB2 7 band C oscillator input base 2 BS 8 electronic band switch input IFGND 9 ground for IF inputs IFOUT IF amplifier output IFIN1 11 IF amplifier input 1 IFIN2 12 IF amplifier input 2 V P 13 supply voltage LOOUT1 14 local oscillator amplifier output 1 LOOUT2 1 local oscillator amplifier output 2 RFGND 16 ground for RF inputs CIN1 17 band C input 1 CIN2 18 band C input 2 AIN1 19 band A input 1 AIN2 20 band A input 2 handbook, halfpage AOSCIB GND AOSCOC COSCIB1 COSCOC1 COSCOC2 COSCIB2 BS IFGND IFOUT 1 20 AIN AIN CIN CIN1 16 RFGND 6 1 LOOUT LOOUT VP 9 12 IFIN2 11 IFIN1 MBE390 Fig.2 Pin configuration. 199 Mar 22 4

5 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER MIN. MAX. UNIT V P supply voltage range V V P(op) operating supply voltage 4.. V V n(max) maximum voltage on each pin with a 22 kω resistor connected in 3 V series V SW switching voltage V T stg storage temperature +10 C T amb operating ambient temperature C T j junction temperature +10 C THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT R th j-a thermal resistance from junction to ambient in free air 120 K/W HANDLING Human body model: the IC withstands 2000 V (except pins 17 and 18 which withstand 00 V) in accordance with UZW-BO-FQ-A302; R = 1. kω; C = 0 pf. Machine model: the IC withstands 200 V in accordance with UZW-BO-FQ-B302; R = 0 Ω; C = 200 pf. 199 Mar 22

6 CHARACTERISTICS V P =V; T amb =2 C; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Supply V P supply voltage V I P supply current I P(max) measured at V P(max) 0 64 ma V SW switching voltage band A V band C 3.0 V P V I SW switching current band A; V SW =0V 2 µa band C; V SW =V 4. µa V P(max) 6 µa IF amplifier S 22 output reflection coefficient f i = 43. MHz; see Fig db f i = 43. MHz; see Fig deg f i = 8.7 MHz; see Fig db f i = 8.7 MHz; see Fig deg Z O output impedance f i = 43. MHz; see Fig Ω f i = 43. MHz; see Fig Ω f i = 8.7 MHz; see Fig Ω f i = 8.7 MHz; see Fig Ω SLO visibility of the LO frequency at the IF output (worst case in the frequency range of band A and band C) R L =7Ω 8 dbµv Band A mixer (including IF amplifier) f R frequency range VHFl MHz VHFlll MHz N A noise figure f i = 0 MHz; see Fig db f i = 10 MHz; see Fig db f i = 300 MHz; see Fig db g os optimum source conductance f i = 0 MHz; see Fig ms f i = 10 MHz; see Fig ms f i = 300 MHz; see Fig.7 1. ms Y I input admittance (G P //C P ) G P ; f i =.2 MHz; see Fig ms G P ; f i = MHz; see Fig.9 0. ms C P ; f i =.2 to MHz; 1.3 pf see Fig.9 V oa(if) IF output voltage 1% cross modulation; in channel; f i =.2 to MHz; R L =7Ω; wanted frequency sound carrier; unwanted frequency picture carrier; see Fig. 8 dbµv 199 Mar 22 6

7 SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V i(rf) RF input voltage f i = 173 MHz; note 1 91 dbµv f i = 407 MHz; note 1 83 dbµv G v(a) voltage gain at the channel centre f IF = 43. MHz; R L =7Ω; see Fig db Band A oscillator f R frequency range VHFl MHz VHFlll MHz f shift frequency shift (worst case in V P = %; note khz the frequency range) V P = %; note khz χ ripple(p-p) f drift Φ N ripple susceptibility of the supply voltage (peak-to-peak value frequency drift (worst case in the frequency range) phase noise, carrier-to-noise sideband (worst case in the frequency range) V P = 4.7 to.2 V; f i = 1 MHz; note 3 V P = 4.7 to.2 V; f i = 173 MHz; note 3 V P = 4.7 to.2 V; f i = 179 MHz; note 3 V P = 4.7 to.2 V; f i = 407 MHz; note 3 78 mv 34 mv 8.0 mv mv T = 2 C with no compensation; NP0 capacitors; note khz s to 1 min after switch on; note khz ±0 khz; frequency offset; B=3kHz 60 dbc Band C mixer (including IF amplifier) f R frequency range, picture MHz carrier N C noise figure f i = MHz 9 11 db (not corrected for image) f i = MHz 12 db Z I input impedance (R s +L s ) R s ; f i = MHz; see Fig. 30 Ω L s ; f i = MHz; see Fig. 9 nh R s ; f i = MHz; see Fig. 38 Ω L s ; f i = MHz; see Fig. 6 nh V oc(if) IF output voltage 1% cross modulation; in channel; f i = 36.2 to MHz; R L =7Ω; wanted frequency sound carrier; unwanted frequency picture carrier; see Fig.6 8 dbµv V i(rf) RF input voltage f i = 847 MHz; note 1 66 dbµv G v(c) voltage gain f IF = 43. MHz; R L =7Ω; db see Fig Mar 22 7

8 SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Band C oscillator f R frequency range MHz f shift frequency shift V P = %; note khz V P = %; note khz χ ripple(p-p) f drift Φ N ripple susceptibility of the supply voltage (peak-to-peak value frequency drift (worst case in the frequency range) phase noise, carrier-to-noise sideband (worst case in the frequency range) V P = 4.7 to.2 V; f i = 413 MHz 203 mv V P = 4.7 to.2 V; f i = 847 MHz; 22 mv note 3 T = 2 C with compensation; note 4 s to 1 min after switching on; note ±0 khz; frequency offset; B=3kHz khz khz 64 dbc LO output Y O output admittance (G P //C P ) G P ; f i = 1 MHz; see Fig ms G P ; f i = 847 MHz; see Fig ms C P ; f i = 1 to 847 MHz; see Fig pf V O output voltage R L =0Ω; V P = 4. to. V; dbµv V t = 0 to 28 V SRF spurious signal on LO output with respect to LO output signal R L =0Ω; note 6 1 db HLO LO signal harmonics w.r.t. LO signal R L =0Ω. 9. db Notes 1. The RF signal is modulated with 0% AM at 1 khz: The level of the RF signal is increased until there is a 23 db difference between the LO carrier and the sideband components. 2. The frequency shift is defined as a variation in oscillator frequency when the supply voltage varies from V P = to 4.7 V or from V P = to.7 V. 3. The ripple susceptibility is measured for a 00 khz ripple at the LO output with the set-up as illustrated in Fig.8. The level of the ripple signal is increased until there is a 3. db difference between the LO carrier and the sideband components. 4. The frequency shift is defined as a variation in oscillator frequency when the supply voltage varies from T amb =2 Cto0 C or from T amb =2 Cto0 C.. The switching on drift is defined as the variation in oscillator frequency between seconds and 1 minutes after switching on. 6. SRF: spurious signal on LO with respect to LO output signal; a) RF voltage level =1V at f i =.2 to 22 MHz. b) RF level = 2. dbm at f i = 22 to MHz. c) RF level = dbm at f i = to MHz. 199 Mar 22 8

9 signal source 2 Ω A IN IF out Vout e Vmeas V Vin D.U.T. V' meas spectrum analyzer RMS voltmeter A IN MBE290 Z i >> V i =2V meas (V i =80dBµV); V o =V' meas (0 + 2)/0; voltage gain for band A = 20log(V o /V i ). Fig.3 Band A gain measurement. signal source IF 2 Ω A C C IN out e Vout HYBRID V D.U.T. V' meas meas V RMS voltmeter B D C IN MBE289 spectrum analyzer V i =V meas (V i =70dBµV); V o =V' meas (0 + 2)/0; voltage gain for band C = 20log(V o /V i ). Fig.4 Band C gain measurement. 199 Mar 22 9

10 e w e u V meas V RMS wanted voltmeter input signal source 2 Ω A C A IN IF out unwanted input signal source B HYBRID D wanted input signal A IN D.U.T. V out modulation analyzer (unwanted AM on the output wanted frequency) MBE288 Wanted input signal = 80 dbµv; Zi >> wanted input signal = 2V meas ; unwanted input signal modulated with 30% AM; V oa(if) = unwanted output signalv o when the output wanted signal is modulated with 0.3% AM. Fig. Band A 1% cross modulation. e w e u wanted input signal source 2 Ω A C A C C IN IF out unwanted input signal source B HYBRID D wanted input signal B V HYBRID D RMS voltmeter C IN D.U.T. MBE287 V out modulation analyzer (unwanted AM on the output wanted frequency) Wanted input signal = 70 dbµv; unwanted input signal modulated with 30% AM; V oa(if) = unwanted output signal V o when the output wanted signal is modulated with 0.3% AM. Fig.6 Band C 1% cross modulation. 199 Mar 22

11 BNC C1 I1 PCB BNC C3 I3 PCB L1 C2 RIM-RIM plug I2 RIM-RIM plug C4 (a) (b) MBE286-1 (a) For f R = 0 MHz: mixer A frequency response measured = 7 MHz, loss = 0 db image suppression = 16 db C1 = 9 pf C2=1pF L1 = 7 turns (.mm, wire diam. = 0. mm) l1 = rigid cable (RIM): cm long (rigid cable (RIM); 33 db/0 m;, 96 pf/m). (b) For f R = 180 MHz: mixer A frequency response measured = 10.3 MHz, loss = 1.3 db image suppression = 13 db C3 = pf C4=2pF l2 = rigid cable (RIM): 30 cm long l3 = rigid cable (RIM): cm long (rigid cable (RIM); 33 db/0 m; ; 96 pf/m). Fig.7 Input circuit for minimum noise figure. DC supply V P MBE376 0 µf 6.8 kω 0 µf MEASUREMENT TEST CIRCUIT OF FIG. 14 to spectrum analyser ripple signal 47 Ω f o 00 khz 00 khz Fig.8 Measurement set-up for ripple measurement, 199 Mar 22 11

12 j j MHz 370 MHz MKA987 Fig.9 S 11 on VHF mixer input (Z chart; Z o =0Ω) MHz + j j 0 30 MHz MKA986 Fig. S 11 on UHF mixer input (Z chart; Z o =0Ω). 199 Mar 22 12

13 j j MHz 80 MHz MKA98 Fig.11 S 22 on LO output (Z chart; Z o =0Ω) j j MHz 2 20 MHz MKA984 Fig.12 S 22 on IFoutput (Z chart; Z o =0Ω). 199 Mar 22 13

14 INTERNAL PIN CONFIGURATION RF ground 1 14 V p IF FILTER BAND A INPUT BAND C INPUT BAND C OSCILLATOR LO OUTPUT STABILIZER V s BAND A OSCILLATOR BAND SWITCH IF OUTPUT V s V s V s Vs ground IF ground MBE393 Fig.13 Internal pin configuration. Table 1 Average DC voltage on pins UHF/ PINS VHF VHF UHF Mar 22 14

15 APPLICATION INFORMATION NETWORK MEASUREMENT ANZAC HYBRID ANZAC HYBRID V L7 R C C19 C20 C C24 C26 C27 C22 C BAND A STAGE BAND C STAGE LOCAL OSCILLATOR AMPLIFIER DC STABILIZER MIXER MIXER BAND A OSCILLATOR BAND C OSCILLATOR ELECTRONIC BAND SWITCH IF AMPLIFIER C6 C7 C11 C12 C13 C14 C29 C17 R4 D2 C4 V L2 C3 L1 R2 D1 R3 C2 R1 C1 ΙΙΙ Ι C9 D3 C R8 L3 L4 R9 A C V R14 IF out NETWORK MEASUREMENT MBE392 R R7 R6 Vt C C8 C30 C28 Fig.14 Measurement test circuit. 199 Mar 22 1

16 Application diagram components values Table 2 C1 C2 C3 C4 C C6 C7 C8 C9 C C11 C12 C13 C14 C17 C18 C19 C20 C21 C22 C23 C24 C26 C27 C28 C29 C30 Capacitors (all SMD and NP0 except C9 to C11 to C14 and C29) NUMBER VALUE 82 pf 2.2 nf 2.2 nf 1. pf 2.2 nf 6 pf (N70) 0 pf 1 pf (N100) 2 pf (N70) 2 pf (N70) 1 pf (N100) 1 pf 1 pf 2.2 nf 1 µf (40 V electrolytic capacitor) Table 3 R1 R2 R3 R4 R R6 R7 R8 R9 R R14 Table 4 Diodes D1 D2 D3 Coils (1) L1 L2 L3 L4 Resistors (all SMD) NUMBER Diodes and coils NUMBER Note 1. Wire size for L1 to L4 is 0.4 mm Transformer (L7 = 2 turns) Ω 12 kω 2.7 kω 47 kω Ω 47 kω 22 kω 2.2 kω 22 kω 0 Ω 27 Ω BA792 BB133 BB134 6 t (3. mm) 3 t (2. mm) 2 t (2. mm) 3 t (3 mm) VALUE VALUE Coil type: TOKO 7kN; material: 113kN, screw core ( ), pot core ( ). 199 Mar 22 16

17 PACKAGE OUTLINE SSOP20: plastic shrink small outline package; 20 leads; body width 4.4 mm SOT266-1 D E A X c y H E v M A Z Q pin 1 index A 2 A 1 (A ) 3 A θ 1 w M e b p L detail X L p 0 2. mm scale DIMENSIONS (mm are the original dimensions) A UNIT A 1 A 2 A 3 b p c D (1) E (1) e H (1) E L L p Q v w y Z max. mm θ o o 0 Note 1. Plastic or metal protrusions of 0.20 mm maximum per side are not included. OUTLINE VERSION REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE SOT Mar 22 17

18 SOLDERING Plastic small outline packages BY WAVE During placement and before soldering, the component must be fixed with a droplet of adhesive. After curing the adhesive, the component can be soldered. The adhesive can be applied by screen printing, pin transfer or syringe dispensing. Maximum permissible solder temperature is 260 C, and maximum duration of package immersion in solder bath is s, if allowed to cool to less than 10 C within 6 s. Typical dwell time is 4 s at 20 C. A modified wave soldering technique is recommended using two solder waves (dual-wave), in which a turbulent wave with high upward pressure is followed by a smooth laminar wave. Using a mildly-activated flux eliminates the need for removal of corrosive residues in most applications. BY SOLDER PASTE REFLOW Reflow soldering requires the solder paste (a suspension of fine solder particles, flux and binding agent) to be applied to the substrate by screen printing, stencilling or pressure-syringe dispensing before device placement. Several techniques exist for reflowing; for example, thermal conduction by heated belt, infrared, and vapour-phase reflow. Dwell times vary between 0 and 300 s according to method. Typical reflow temperatures range from 21 to 20 C. Preheating is necessary to dry the paste and evaporate the binding agent. Preheating duration: 4 min at 4 C. REPAIRING SOLDERED JOINTS (BY HAND-HELD SOLDERING IRON OR PULSE-HEATED SOLDER TOOL) Fix the component by first soldering two, diagonally opposite, end pins. Apply the heating tool to the flat part of the pin only. Contact time must be limited to s at up to 300 C. When using proper tools, all other pins can be soldered in one operation within 2 to s at between 270 and 320 C. (Pulse-heated soldering is not recommended for SO packages.) For pulse-heated solder tool (resistance) soldering of VSO packages, solder is applied to the substrate by dipping or by an extra thick tin/lead plating before package placement. DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 199 Mar 22 18

INTEGRATED CIRCUITS DATA SHEET. TDA5332T Double mixer/oscillator for TV and VCR tuners. Preliminary specification File under Integrated Circuits, IC02

INTEGRATED CIRCUITS DATA SHEET Double mixer/oscillator for TV and VCR File under Integrated Circuits, IC02 March 1989 GENERAL DESCRIPTION The is an integrated circuit that performs the mixer/oscillator