Silicon Diffused Power Transistor
|
|
- Andrea Anderson
- 5 years ago
- Views:
Transcription
1 GENERAL DESCRIPTION The is a silicon npn power switching transistor in the TO22AB envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems, etc. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT V CESM Collector-emitter voltage peak value V BE = V - 7 V V CBO Collector-Base voltage (open emitter) - 7 V V CEO Collector-emitter voltage (open base) - 4 V I C Collector current (DC) - 12 A I CM Collector current peak value - 24 A P tot Total power dissipation T mb 25 C - 8 W V CEsat Collector-emitter saturation voltage I C = 5. A;I B = 1. A V h FEsat t f Fall time I C = 5. A; V CE = 5 V I C = 5. A; I B1 = 1. A µs PINNING - TO22AB PIN CONFIGURATION SYMBOL PIN 1 base DESCRIPTION mb 2 collector 3 emitter tab collector LIMITING VALUES Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V CESM Collector to emitter voltage V BE = V - 7 V V CEO Collector to emitter voltage (open base) - 4 V V CBO Collector to base voltage (open emitter) - 7 V I C Collector current (DC) - 12 A I CM Collector current peak value - 24 A I B Base current (DC) - 6 A I BM Base current peak value - 12 A P tot Total power dissipation T mb 25 C - 8 W T stg Storage temperature C T j Junction temperature - 15 C THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT R th j-mb Junction to mounting base K/W R th j-a Junction to ambient in free air 6 - K/W March Rev 1.
2 STATIC CHARACTERISTICS T mb = 25 C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT I CES,I CBO Collector cut-off current 1 V BE = V; V CE = V CESMmax ma I CES V BE = V; V CE = V CESMmax ; ma T j = 125 C I CEO Collector cut-off current V CEO = V CEOMmax (4V) ma I EBO Emitter cut-off current V EB = 9 V; I C = A ma V CEOsust Collector-emitter sustaining voltage I B = A; I C = ma; V L = 25 mh V CEsat Collector-emitter saturation voltage I C = 5. A;I B = 1. A V I C = 8. A;I B = 1.6 A V V BEsat Base-emitter saturation voltage I C = 5. A;I B = 1. A V I C = 8. A;I B = 1.6 A V h FE DC current gain I C = 5. A; V CE = 5 V 8-4 h FEsat I C = 8. A; V CE = 5 V 6-3 DYNAMIC CHARACTERISTICS T mb = 25 C unless otherwise specified SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT Switching times (resistive load) I Con = 5 A; I Bon = -I Boff = 1 A; R L = 75 ohms; V BB2 = 4 V; t s Turn-off storage time µs t f Turn-off fall time.26.7 µs Switching times (inductive load) I Con = 5 A; I Bon = 1 A; L B = 1 µh; -V BB = 5 V t s Turn-off storage time µs t f Turn-off fall time.1.5 µs Switching times (inductive load) I Con = 5A; I Bon = 1 A; L B = 1 µh; -V BB = 5 V; T j = C t s Turn-off storage time µs t f Turn-off fall time -.9 µs 1 Measured with half sine-wave voltage (curve tracer). March Rev 1.
3 + 5v -2R 9 % ICon 9 % IC % Horizontal Oscilloscope Vertical 3R 1R 6V 3-6 Hz Fig.1. Test circuit for V CEOsust. ts ton tf toff IBon IB % tr 3ns -IBoff Fig.4. Switching times waveforms with resistive load. IC / ma VCC 25 LC VCE / V min VCEOsust Fig.2. Oscilloscope display for V CEOsust. IBon -VBB LB T.U.T. Fig.5. Test circuit inductive load. V CC = 3 V; -V BE = 5 V; L C = 2 uh; L B = 1 uh VCC ICon 9 % IC RL VIM tp RB T.U.T. IB ts toff IBon tf % t T t Fig.3. Test circuit resistive load. V IM = -6 to +8 V V CC = 25 V; t p = 2 µs; δ = t p / T =.1. R B and R L calculated from I Con and I Bon requirements. -IBoff Fig.6. Switching times waveforms with inductive load. March Rev 1.
4 PD% Normalised Power Derating Tmb / C Fig.7. Normalised power dissipation. PD% = PD/PD 25 C = f (T mb ) VBEsat VOLTAGE/V IC/IB = IC, COLLECTOR CURRENT/A Fig.. Base-Emitter saturation voltage. Solid lines = typ values, V BEsat = f(ic); at IC/IB =5. HFE 5 VCEsat VOLTAGE/V V 15 1V IC/IB = IC/A Fig.8. Typical DC current gain. h FE = f(i C ) parameter V CE IC, COLLECTOR CURRENT/A Fig.11. Collector-Emitter saturation voltage. Solid lines = typ values, V CEsat = f(ic); at IC/IB =5. VCEsat/V 2 Zth / (K/W) D= tp t PD p.2 D = T IB/A Fig.9. Collector-Emitter saturation voltage. Solid lines = typ values, V CEsat = f(ib); T j =25 C. 1A 3A 2A 4A T t.1 1E-6 1E-4 1E-2 1E+ t / s Fig.12. Transient thermal impedance. Z th j-mb = f(t); parameter D = t p /T March Rev 1.
5 IC/A 14 VCC 12 8 LC VCL(RBSOAR) 6-5V IBon LB PROBE POINT 4-3V 2-1V -VBB T.U.T VCEclamp/V Fig.13. Reverse bias safe operating area (T j < T jmax ) for -V be = 5V,3V and 1V. Fig.14. Test circuit for reverse bias safe operating area. V clamp < 7V; V cc = 15V; -V be = 5V,3V & 1V; L B = 1µH; L C = 2µH March Rev 1.
6 MECHANICAL DATA Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-22AB SOT78 E p A A 1 D 1 q mounting base D L 1 (1) L 2 (1) L b 1 (2) (3 ) Q b 2 (2) (2 ) b(3 ) c e e 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT mm A A b b 1 (2) b (2) 2 c D D 1 E e L L 1 (1) L 2 (1) max p q Q Notes 1. Lead shoulder designs may vary. 2. Dimension includes excess dambar. OUTLINE VERSION SOT78 IEC REFERENCES JEDEC JEITA 3-lead TO-22AB SC-46 EUROPEAN PROJECTION ISSUE DATE March Rev 1.
7 Legal information Data sheet status Document status [1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet Product status [3] Development Qualification Production Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term 'short data sheet' is explained in section "Definitions". [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL Definitions Draft The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet A short data sheet is an extract from a full data sheet with the same product type number(s and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local WeEn Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Product specification The information and data provided in a Product data sheet shall define the specification of the product as agreed between and its customer, unless and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the product is deemed to offer functions and qualities beyond those described in the. Disclaimers Limited warranty and liability Information in this document is believed to be accurate and reliable. However, does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. takes no responsibility for the content in this document if provided by an information source outside of. In no event shall be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges whether or not such damages are based on tort (including negligence, warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of WeEn Semiconductors. Right to make changes reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an product can reasonably be expected to result in personal injury, death or severe property or environmental damage. and its suppliers accept no liability for inclusion and/or use of products in such equipment or applications and therefore such inclusion and/or use is at the customer s own risk. Quick reference data The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications Applications that are described herein for any of these products are for illustrative purposes only. makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using products, and WeEn Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer s sole responsibility to determine whether the product is suitable and fit for the customer s applications and products planned, as well as for the planned application and use of customer s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer s applications or products, or the application or use by customer s third party customer(s). Customer is responsible for doing all necessary testing for the customer s applications and products using WeEn Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer s third party customer(s). WeEn does not accept any liability in this respect. Limiting values Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 6134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. No offer to sell or license Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. Non-automotive qualified products Unless this data sheet expressly states that this specific product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. accepts no liability for inclusion and/or use of nonautomotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond specifications such use shall be solely at customer s own risk, and (c) customer fully indemnifies for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond WeEn Semiconductors standard warranty and product specifications.
8 Translations A non-english (translated version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners.
DISCRETE SEMICONDUCTORS DATA SHEET. BUJ105A Silicon Diffused Power Transistor
DISCRETE SEMICONDUCTORS DATA SHEET February 218 GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in TO22AB envelope intended for use in high frequency electronic
More informationDISCRETE SEMICONDUCTORS DATA SHEET. PHE13009 Silicon Diffused Power Transistor
DISCRETE SEMICONDUCTORS DATA SHEET Product specification March 1999 GENERAL DESCRIPTION The is a silicon npn power switching transistor in the TO22AB envelope intended for use in high frequency electronic
More informationDISCRETE SEMICONDUCTORS DATA SHEET. BUJ303B Silicon Diffused Power Transistor
DISCRETE SEMICONDUCTORS DATA SHEET March 218 GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a TO22AB envelope intended for use in high frequency electronic
More informationDISCRETE SEMICONDUCTORS DATA SHEET. BUJ403A Silicon Diffused Power Transistor
DISCRETE SEMICONDUCTORS DATA SHEET Product specification December 1998 NXP Semiconductors Product specification GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor
More informationDISCRETE SEMICONDUCTORS DATA SHEET. BUJ303B Silicon Diffused Power Transistor
DISCRETE SEMICONDUCTORS DATA SHEET Product specification March 22 NXP Semiconductors Product specification GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor
More informationDISCRETE SEMICONDUCTORS DATA SHEET. BUJ105AB Silicon Diffused Power Transistor
DISCRETE SEMICONDUCTORS DATA SHEET October 2001 GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in SOT404 (D 2 -PAK) surface-mount package intended for use
More informationSilicon diffused power transistor
Rev.01-30 March 2018 1. General description High voltage, high speed NPN planar-passivated power switching transistor in a SOT78 plastic package intended for use in high frequency electronic lighting ballast
More informationNPN power transistor with integrated diode
Rev.03-30 March 2018 1. General description High voltage, high speed, planar passivated NPN power switching transistor with integrated anti-parallel E-C diode in a SOT78 (TO-220AB) plastic package. 2.
More informationBUJ100LR. 1. General description. 2. Features and benefits. 3. Applications. 4. Pinning information. 5. Ordering information
3 October 2016 Product data sheet 1. General description High voltage, high speed, planar passivated NPN power switching transistor in a SOT54 (TO-92) plastic package. 2. Features and benefits Fast switching
More informationNPN power transistor with integrated diode
Rev.02-29 May 2018 1. General description High voltage, high speed, planar passivated NPN power switching transistor with integrated anti-parallel emitter-collector diode in a SOT54 (TO-92) plastic package.
More informationBUJ302AD. 1. General description. 2. Features and benefits. 3. Applications. 4. Quick reference data
28 April 208 Product data sheet. General description High voltage, high speed planar passivated NPN power switching transistor in a SOT428 (DPAK) surface mountable plastic package. 2. Features and benefits
More informationDual ultrafast power diode in a SOT78 (TO-220AB) plastic package.
Rev.01-8 June 2018 1. General description in a SOT78 (TO-220AB) plastic package. 2. Features and benefits Soft recovery characteristic minimizes power consuming oscillations Very low on-state losses Fast
More informationPHPT61002NYC. 1. General description. 2. Features and benefits. 3. Applications. Quick reference data
9 January 204 Product data sheet. General description NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT602PYC 2. Features
More informationLow collector-emitter saturation voltage V CEsat High collector current capability High collector current gain h FE at high I C
24 June 25 Product data sheet. General description NPN high-voltage low V CEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package.
More information100 V, 4.1 A PNP low VCEsat (BISS) transistor
Rev. 3 26 July 2 Product data sheet. Product profile. General description PNP low V CEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package.
More informationSingle general-purpose switching transistor AEC-Q101 qualified. Switching and linear amplification. Symbol Parameter Conditions Min Typ Max Unit V CEO
6 March 2015 Product data sheet 1. General description PNP switching transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. NPN complement: PMBT2222 60V variant: A 2. Features
More informationTable 1. Quick reference data Symbol Parameter Conditions Values Unit Absolute maximum rating V DRM repetitive peak off-state
Rev.01-14 March 2018 1. General description Planar passivated four quadrant triac in a SOT78 (TO-220AB) plastic package intended for use in general purpose bidirectional switching and phase control applications.
More information30 V, 3 A NPN low VCEsat (BISS) transistor. Loadswitch Battery-driven devices Power management Charging circuits Power switches (e.g.
7 April 205 Product data sheet. General description NPN low V CEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT06 leadless small Surface-Mounted Device (SMD) plastic
More informationNPN Darlington transistor in an SOT223 plastic package. PNP complement: BSP61
13 July 2018 Product data sheet 1. General description in an SOT223 plastic package. PNP complement: BSP61 2. Features and benefits High current of 1 A Low voltage of 60 V Integrated diode and resistor
More informationLoadswitch Battery-driven devices Power management Charging circuits Power switches (e.g. motors, fans)
28 August 23 Product data sheet. General description PNP low V CEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFND-3 (SOT25) Surface-Mounted Device (SMD) plastic package
More informationPHPT61003PY. 1. General description. 2. Features and benefits. 3. Applications. Quick reference data
13 January 2014 Product data sheet 1. General description PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. NPN complement: PHPT61003NY 2. Features
More informationBT G0T. 1. General description. 2. Features and benefits. 3. Applications. 4. Quick reference data. 4Q Triac
Rev.01-11 July 2018 1. General description 2. Features and benefits 3. Applications 4. Quick reference data Table 1. Quick reference data Planar passivated four quadrant triac in a SOT78 (TO-220AB) plastic
More informationPBHV9560Z. 1. General description. 2. Features and benefits. 3. Applications. Quick reference data
2 August 204 Product data sheet. General description PNP high-voltage low V CEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.
More informationNPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package.
27 May 2015 Product data sheet 1. General description NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT60415PY 2. Features
More informationBT RT SCR 24 April 2017 Product data sheet
24 April 217 1. General description Planar passivated Silicon Controlled Rectifier () in a SOT78 (TO-22AB) plastic package intended for use in applications requiring high bidirectional blocking voltage
More informationOutput rectifiers in high-frequency switched-mode power supplies
Rev.05-5 June 2018 1. General description in a SOT78 (TO-220AB) plastic package. These diodes are rugged with a guaranteed electrostatic discharge voltage capability. 2. Features and benefits Fast switching
More informationPHE13003A. 1. Product profile. NPN power transistor. 1.1 General description. 1.2 Features and benefits. 1.3 Applications. Quick reference data
Rev. 02 29 July 20 Product data sheet 1. Product profile 1.1 General description High voltage, high speed, planar passivated NPN power switching transistor in a SOT54 (TO-92) 3 leads plastic package. 1.2
More informationHyperfast power diode in a SOD59 (2-lead TO-220AC) plastic package.
Rev.01-1 March 2018 1. General description in a SOD59 (2-lead TO-220AC) plastic package. 2. Features and benefits Low reverse recovery current Low thermal resistance Low leakage current Reduces switching
More information80 V, 1 A NPN medium power transistors. Type number Package PNP complement Nexperia JEITA JEDEC BCP56T SOT223 SC-73 - BCP53T
8 V, A NPN medium power transistors Rev. 5 July 26 Product data sheet. Product profile. General description NPN medium power transistors in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic
More informationBCP56H series. 80 V, 1 A NPN medium power transistors
SOT223 8 V, A NPN medium power transistors Rev. 23 November 26 Product data sheet. Product profile. General description NPN medium power transistors in a medium power SOT223 (SC-73) Surface-Mounted Device
More informationNPN power transistor with integrated diode
Rev. 01 29 July 2010 Product data sheet 1. Product profile 1.1 General description High voltage, high speed, planar passivated NPN power switching transistor with integrated anti-parallel emitter-collector
More information45 V, 800 ma PNP general-purpose transistor. General-purpose switching and amplification. Symbol Parameter Conditions Min Typ Max Unit
Rev. 1 21 April 217 Product data sheet 1 General description 2 Features and benefits 3 Applications PNP general-purpose transistors in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.
More informationDISCRETE SEMICONDUCTORS DATA SHEET. BYV42E, BYV42EB series Rectifier diodes ultrafast, rugged
DISCRETE SEMICONDUCTORS DATA SHEET September 2018 FEATURES SYMBOL QUICK REFERENCE DATA Low forward volt drop Fast switching Soft recovery characteristic Reverse surge capability High thermal cycling performance
More informationBYV10ED-600P Ultrafast power diode 4 July 2017 Product data sheet
4 July 2017 1. General description Enhanced ultrafast power diode in a TO252 (DPAK) plastic package. 2. Features and benefits High thermal cycling performance Soft recovery characteristic Low on-state
More informationGeneral-purpose switching and amplification Mobile applications
10 September 2018 Product data sheet 1. General description 2. Features and benefits 3. Applications 4. Quick reference data NPN/NPN general-purpose transistor in a leadless ultra small DFN1010B-6 (SOT1216)
More informationPNP 5 GHz wideband transistor. Oscilloscopes and spectrum analyzers Radar systems RF wideband amplifiers
Rev. 3 22 January 2016 Product data sheet 1. Product profile 1.1 General description PNP transistor in a plastic SOT23 envelope. It is primarily intended for use in RF wideband amplifiers, such as in aerial
More informationLoad switch Battery-driven devices Power management Charging circuits Power switches (e.g. motors, fans)
2 V, A NPN/NPN low VCEsat (BISS) transistor 29 November 22 Product data sheet. Product profile. General description NPN/NPN low V CEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium
More informationGeneral-purpose switching and amplification Mobile applications
8 July 2015 Product data sheet 1. General description NPN/PNP general-purpose transistor in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package. 2. Features and benefits
More informationBC817K series. 1 Product profile. 45 V, 500 ma NPN general-purpose transistors. 1.1 General description. 1.2 Features and benefits. 1.
45 V, 5 ma NPN general-purpose transistors Rev. 2 6 March 28 Product data sheet Product profile. General description NPN general-purpose transistors in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD)
More informationBC817-25QA; BC817-40QA
Rev. 1 3 September 2013 Product data sheet 1. Product profile 1.1 General description 500 ma NPN general-purpose transistors in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD)
More informationPBSS4112PANP. Load switch Battery-driven devices Power management Charging circuits Power switches (e.g. motors, fans)
20 V, A NPN/PNP low VCEsat (BISS) transistor 29 November 202 Product data sheet. Product profile. General description NPN/PNP low V CEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium
More informationBC857XQA series. 45 V, 100 ma PNP general-purpose transistors
45 V, 100 ma PNP general-purpose transistors Rev. 1 26 August 2015 Product data sheet 1. Product profile 1.1 General description PNP general-purpose transistors in a leadless ultra small DFN1010D-3 (SOT1215)
More informationBYV34X Product profile. 2. Pinning information. Dual rectifier diode ultrafast. 1.1 General description. 1.2 Features. 1.
Rev. 02 28 September 2018 Product data sheet 1. Product profile 1.1 General description Ultrafast, dual common cathode, epitaxial rectifier diode in a SOT186A (TO-220F)) plastic package. 1.2 Features Fast
More informationPDTB1xxxT series. 500 ma, 50 V PNP resistor-equipped transistors
Rev. 3 May 204 Product data sheet. Product profile. General description PNP Resistor-Equipped Transistor (RET) family in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. Table. Product
More informationLeadless ultra small SMD plastic package Low package height of 0.37 mm Power dissipation comparable to SOT23 AEC-Q101 qualified
19 August 2015 Product data sheet 1. General description PNP general-purpose transistor in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. NPN complement: BC846BMB.
More informationBT D. 1. General description. 2. Features and benefits. 3. Applications. 4. Quick reference data. 4Q Triac
Rev.01-26 April 2018 1. General description 2. Features and benefits Planar passivated very sensitive gate four quadrant triac in a SOT82 (SIP3) plastic package intended for use in general purpose bidirectional
More informationBC857QAS. 1. General description. 2. Features and benefits. 3. Applications. Quick reference data
8 July 2015 Product data sheet 1. General description PNP/PNP general-purpose transistor in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package. NPN/NPN complement:
More informationNPN/PNP low V CEsat Breakthrough In Small Signal (BISS) transistor in a SOT96-1 (SO8) medium power Surface-Mounted Device (SMD) plastic package.
Rev. 2 4 October 200 Product data sheet. Product profile. General description NPN/PNP low V CEsat Breakthrough In Small Signal (BISS) transistor in a SOT96- (SO8) medium power Surface-Mounted Device (SMD)
More informationUltrafast power diode in a SOD113 (TO-220F) plastic package.
19 October 2017 Product data sheet 1. General description Ultrafast power diode in a SOD113 (TO-220F) plastic package. 2. Features and benefits Low on-state loss Ultra low leakage Low switching loss Fast
More informationNPN/NPN low V CEsat Breakthrough In Small Signal (BISS) transistor in a SOT96-1 (SO8) medium power Surface-Mounted Device (SMD) plastic package.
Rev. 2 October 200 Product data sheet. Product profile. General description NPN/NPN low V CEsat Breakthrough In Small Signal (BISS) transistor in a SOT96- (SO8) medium power Surface-Mounted Device (SMD)
More informationPMBT Product profile. 2. Pinning information. PNP switching transistor. 1.1 General description. 1.2 Features and benefits. 1.
Rev. 06 2 March 2010 Product data sheet 1. Product profile 1.1 General description in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package. NPN complement: PMBT3904. 1.2 Features and benefits
More informationBTA41-600B 4Q Triac 10 July 2017 Product data sheet
1 July 217 1. General description Planar passivated four quadrant triac in a SOT1292 (IITO3P) package intended for use in circuits where high static and dynamic dv/dt and high di/dt can occur. This triac
More informationPDTD1xxxU series. 500 ma, 50 V NPN resistor-equipped transistors
PDTDxxxU series Rev. 3 May 24 Product data sheet. Product profile. General description NPN Resistor-Equipped Transistor (RET) family in a very small SOT323 (SC-7) Surface-Mounted Device (SMD) plastic package.
More informationTable 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V DRM A
22 February 218 Product data sheet 1. General description Planar passivated Silicon Controlled Rectifier () in a SOT78 (TO-22AB) plastic package intended for use in applications requiring very high bidirectional
More informationBC817W series. 1 Product profile. 45 V, 500 ma NPN general-purpose transistors. 1.1 General description. 1.2 Features and benefits. 1.
Rev. 7 June 28 Product data sheet Product profile. General description NPN general-purpose transistors in a very small SOT323 (SC-7) Surface-Mounted Device (SMD) plastic package. Table. Product overview
More informationDigital applications Cost-saving alternative to BC847/BC857 series in digital applications Control of IC inputs Switching loads
50 V, 0 ma NPN/PNP Resistor-Equipped double Transistors (RET) 29 July 207 Product data sheet. General description NPN/PNP Resistor-Equipped double Transistors (RET) in an ultra small DFN42-6 (SOT268) leadless
More informationNPN 5 GHz wideband transistor. The transistor is encapsulated in a 3-pin plastic SOT23 envelope.
SOT3 BFTA Rev. September Product data sheet. Product profile. General description The BFTA is a silicon NPN transistor, primarily intended for use in RF low power amplifiers, such as pocket telephones
More informationBCM857QAS. 1. General description. 2. Features and benefits. 3. Applications. 4. Quick reference data
24 April 2018 Product data sheet 1. General description PNP/PNP matched double transistors in an ultra small DFN1010B-6 (SOT1216) leadless Surface- Mounted Device (SMD) plastic package. NPN/NPN complement:
More informationPBSS4041PX. 1. Product profile. 60 V, 5 A PNP low V CEsat (BISS) transistor. 1.1 General description. 1.2 Features and benefits. 1.
Rev. 0 April 200 Product data sheet. Product profile. General description PNP low V CEsat Breakthrough In Small Signal (BISS) transistor in a medium power and flat lead SOT89 (SC-62) Surface-Mounted Device
More information65 V, 100 ma NPN general-purpose transistors
Rev. 8 24 April 2012 Product data sheet 1. Product profile 1.1 General description NPN general-purpose transistors in Surface-Mounted Device (SMD) plastic packages. Table 1. Product overview Type number
More informationNXPS20H100C. High junction temperature capability Low leakage current
TO-220AB Rev. 2 8 June 2012 Product data sheet 1. Product profile 1.1 General description Dual common cathode power Schottky diode designed for high frequency switched mode power supplies in a SOT78 (TO-220AB)
More information40 V, 0.5 A NPN low VCEsat (BISS) transistor
Rev. 4 April 202 Product data sheet. Product profile. General description NPN low V CEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN006B-3 (SOT883B) Surface-Mounted Device
More informationTable 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V RRM. half sine wave; T sp 112 C; Fig A
4 September 8 Product data sheet. General description Planar passivated with sensitive gate in a SOT3 (SC-73) surface mountable plastic package. These devices are intended to be interfaced directly to
More informationPDTC143/114/124/144EQA series
PDTC43/4/24/44EQA series s Rev. 30 October 205 Product data sheet. Product profile. General description 00 ma NPN Resistor-Equipped Transistor (RET) family in a leadless ultra small DFN00D-3 (SOT25) Surface-Mounted
More informationLow current peripheral driver Control of IC inputs Replaces general-purpose transistors in digital applications Mobile applications
NPN/NPN resistor-equipped transistors; R = 47 kω, R2 = 47 kω 4 November 205 Product data sheet. General description NPN/NPN Resistor-Equipped Transistors (RET) in a leadless ultra small DFN00B-6 (SOT26)
More informationPDTC143X/123J/143Z/114YQA series
PDTC43X/23J/43Z/4YQA series 50 V, 0 ma NPN resistor-equipped transistors Rev. 30 October 205 Product data sheet. Product profile. General description 0 ma NPN Resistor-Equipped Transistor (RET) family
More informationACT108W-600E. Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V DRM. full sine wave; T j(init) = 25 C; t p = 16.
2 August 28 Product data sheet. General description in a SOT223 surface-mountable plastic package with self-protective capabilities against low and high energy transients 2. Features and benefits Common
More informationBC847 series. 1 Product profile. 45 V, 100 ma NPN general-purpose transistors. 1.1 General description. 1.2 Features and benefits. 1.
Rev. 1 2 March 217 Product data sheet 1 Product profile 1.1 General description NPN general-purpose transistors in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. Table 1. Product
More informationTable 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V RRM. half sine wave; T mb 129 C; Fig A
23 July 218 Product data sheet 1. General description Planar passivated Silicon Controlled Rectifier () in a SOT44 (D2PAK) surface mountable plastic package intended for use in applications requiring very
More informationTable 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V RRM. half sine wave; T lead 83 C; Fig A
2 August 28 Product data sheet. General description Planar passivated Silicon Controlled Rectifier with sensitive gate in a SOT54 (TO-92) plastic package. This is designed to be interfaced directly to
More informationPSMN2R2-40PS. High efficiency due to low switching and conduction losses Suitable for standard level gate drive sources
22 February 213 Product data sheet 1. General description Standard level N-channel MOSFET in TO22 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial,
More informationFour planar PIN diode array in SOT363 small SMD plastic package.
Rev. 4 7 March 2014 Product data sheet 1. Product profile 1.1 General description Four planar PIN diode array in SOT363 small SMD plastic package. 1.2 Features and benefits High voltage current controlled
More informationNPN 9 GHz wideband transistor. The transistor is encapsulated in a plastic SOT23 envelope.
SOT23 Rev. 4 7 September 211 Product data sheet 1. Product profile 1.1 General description The is an NPN silicon planar epitaxial transistor, intended for applications in the RF front end in wideband applications
More informationVHF variable capacitance diode
Rev. 1 25 March 2013 Product data sheet 1. Product profile 1.1 General description The is a variable capacitance diode, fabricated in planar technology, and encapsulated in the SOD323 (SC-76) very small
More informationTable 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit I F forward current [1] ma V R reverse voltage V V RRM
23 March 2018 Product data sheet 1. General description in a very small SOD323F (SC-90) flat lead Surface-Mounted Device (SMD) plastic package. 2. Features and benefits High switching speed: t rr 50 ns
More informationBC857xMB series. 45 V, 100 ma PNP general-purpose transistors
SOT883B Rev. 1 21 February 2012 1. Product profile 1.1 General description PNP general-purpose transistors in a leadless ultra small SOT883B Surface-Mounted Device (SMD) plastic package. Table 1. Product
More informationBB Product profile. 2. Pinning information. 3. Ordering information. FM variable capacitance double diode. 1.1 General description
SOT23 Rev. 3 7 September 2011 Product data sheet 1. Product profile 1.1 General description The is a variable capacitance double diode with a common cathode, fabricated in silicon planar technology, and
More informationTwo elements in series configuration in a small SMD plastic package Low diode capacitance Low diode forward resistance AEC-Q101 qualified
Rev. 2 25 October 2016 Product data sheet 1. Product profile 1.1 General description Two planar PIN diodes in series configuration in a SOT323 small SMD plastic package. 1.2 Features and benefits Two elements
More informationPSMN3R9-60PS. High efficiency due to low switching & conduction losses Robust construction for demanding applications Standard level gate
1 February 213 Product data sheet 1. General description Standard level N-channel MOSFET in SOT78 using TrenchMOS technology. Product design and manufacture has been optimized for use in battery operated
More informationGeneral purpose motor control circuits Home appliances Rectifier-fed DC inductive loads e.g. DC motors and solenoids
31 May 218 Product data sheet 1. General description Planar passivated high commutation three quadrant triac in a SOT428 (DPAK) surface-mountable plastic package intended for use in circuits where high
More informationDISCRETE SEMICONDUCTORS DATA SHEET. BFS17W NPN 1 GHz wideband transistor. Product specification Supersedes data of November 1992.
DISCRETE SEMICONDUCTORS DATA SHEET Supersedes data of November 1992 1995 Sep 4 APPLICATIONS Primarily intended as a mixer, oscillator and IF amplifier in UHF and VHF tuners. DESCRIPTION Silicon NPN transistor
More informationDual ultrafast rugged rectifier diode. Table 1. Quick reference Symbol Parameter Conditions Min Typ Max Unit V RRM repetitive peak
Rev. 03 18 July 2018 Product data sheet 1. Product profile 1.1 General description Dual ultrafast epitaxial rectifier diodes in a SOT186A (TO-220F) isolated plastic package. 1.2 Features and benefits Fast
More informationBCP68; BC868; BC68PA
Rev. 8 8 October 2 Product data sheet. Product profile. General description NPN medium power transistor series in Surface-Mounted Device (SMD) plastic packages. Table. Product overview Type number [] Package
More informationPEMB18; PUMB18. PNP/PNP resistor-equipped transistors; R1 = 4.7 k, R2 = 10 k
PNP/PNP resistor-equipped transistors; R1 = 4.7 k, R2 = 10 k Rev. 5 21 December 2011 1. Product profile 1.1 General description PNP/PNP double Resistor-Equipped Transistors (RET) in Surface-Mounted Device
More information50 ma LED driver in SOT457
SOT457 in SOT457 Rev. 1 December 2013 Product data sheet 1. Product profile 1.1 General description LED driver consisting of resistor-equipped PNP transistor with two diodes on one chip in an SOT457 (SC-74)
More informationPDTC143Z series. NPN resistor-equipped transistors; R1 = 4.7 k, R2 = 47 k
PDTC4Z series NPN resistor-equipped transistors; R = 4.7 k, R2 = 47 k Rev. 8 5 December 20 Product data sheet. Product profile. General description NPN Resistor-Equipped Transistor (RET) family in Surface-Mounted
More informationIn data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic
More information20 ma LED driver in SOT457
in SOT457 Rev. 1 December 2013 Product data sheet 1. Product profile 1.1 General description LED driver consisting of resistor-equipped PNP transistor with two diodes on one chip in an SOT457 (SC-74) plastic
More informationBCP53; BCX53; BC53PA
Rev. 9 9 October 2 Product data sheet. Product profile. General description PNP medium power transistor series in Surface-Mounted Device (SMD) plastic packages. Table. Product overview Type number [] Package
More informationBCP55; BCX55; BC55PA
Rev. 8 24 October 2 Product data sheet. Product profile. General description NPN medium power transistor series in Surface-Mounted Device (SMD) plastic packages. Table. Product overview Type number []
More informationNX3020NAK. 1. General description. 2. Features and benefits. 3. Applications. 4. Quick reference data
29 October 213 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET
More informationIMPORTANT NOTICE. 1. Global joint venture starts operations as WeEn Semiconductors. 10 December 2015
IMPORTANT NOTICE 1 December 15 1. Global joint venture starts operations as WeEn Semiconductors Dear customer, As from November 9th, 15 NXP Semiconductors N.V. and Beijing JianGuang Asset Management Co.
More informationTable 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit I F forward current T j = 25 C V RRM
29 June 2018 Product data sheet 1. General description, in an ultra small SOD523 (SC-72) flat lead Surface-Mounted Device (SMD) plastic package. 2. Features and benefits High switching speed: t rr 50 ns
More informationPEMH11; PUMH11. NPN/NPN resistor-equipped transistors; R1 = 10 k, R2 = 10 k
NPN/NPN resistor-equipped transistors; R = k, R2 = k Rev. 6 29 November 20 Product data sheet. Product profile. General description NPN/NPN Resistor-Equipped Transistors (RET) in Surface-Mounted Device
More informationIn data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.
Important notice Dear Customer, On 7 February 217 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic
More informationHEF4002B. 1. General description. 2. Features and benefits. 3. Ordering information. 4. Functional diagram. Dual 4-input NOR gate
Rev. 4 17 October 2016 Product data sheet 1. General description 2. Features and benefits 3. Ordering information The is a dual 4-input NOR gate. The outputs are fully buffered for highest noise immunity
More informationHex non-inverting precision Schmitt-trigger
Rev. 4 26 November 2015 Product data sheet 1. General description The is a hex buffer with precision Schmitt-trigger inputs. The precisely defined trigger levels are lying in a window between 0.55 V CC
More informationUltrafast power diode in a SOD59 (2-lead TO-220AC) plastic package. Discontinuous Current Mode (DCM) Power Factor Correction (PFC)
TO-220AC Rev. 3 29 May 2012 Product data sheet 1. Product profile 1.1 General description in a SOD59 (2-lead TO-220AC) plastic package. 1.2 Features and benefits Fast switching High thermal cycling performance
More informationPlanar PIN diode in a SOD523 ultra small SMD plastic package.
Rev. 5 28 September 2010 Product data sheet 1. Product profile 1.1 General description Planar PIN diode in a SOD523 ultra small SMD plastic package. 1.2 Features and benefits High voltage, current controlled
More informationPNP general-purpose double transistor. PNP general-purpose double transistor in a small SOT143B Surface-Mounted Device (SMD) plastic package.
Rev. 4 2 August 2010 Product data sheet 1. Product profile 1.1 General description in a small SOT143B Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number Package PNP complement
More information