TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA8258H
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1 TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA828H Dual Audio Power Amplifier The TA828H is dual audio power amplifier for consumer applications. This IC provides an output power of 2 watts per channel (at, f = khz, THD = %, ). It is suitable for power amplifier of music center. Features High output power: Pout = 2 W/channel (Typ.) (,, f = khz, THD = %) Weight: 4.4 g (typ.) Low noise: Vno =.4 mvrms (Typ.) (,, GV = 34dB, Rg = kω, BW = 2 Hz~2 khz) Very few external parts. Built in audio muting circuit. Built in thermal shut down protector circuit. Built in output shifted to GND protection circuit. (AC short) Available for using same PCB layout with: TA82AH, TA82AH, TA826H Operation supply voltage range (Ta = 2 C) : VCC (opr) = ~42 V
2 Block Diagram V CC 6 9 Ripple Filter V CC IN 4 IN AMP Ω Pre-GND 4 Ω 2 kω 2 kω PW-GND R C C R R L R L IN2 2 IN2 AMP2 2 Mute. TC Mute 8 Application Information. Voltage gain The closed loop voltage gain is determined by R, R2. R + R2 GV = 2log (db) R2 2 kω + 4 Ω = 2log 4 Ω = 34 (db) R + R2 + R3 GV = 2log (db) R2 + R3 When R3 = 22 Ω GV 3 (db) is given. Input Input R 3 4/2 / 4/2 / R 2 R 4 Ω 2 kω Figure R 2 R 4 Ω 2 kω 7/2 7/2 Output Output Figure
3 2. Muting TA828H This product has an excellent muting system. () Audio muting This IC is possible to make audio muting operation by using pin muting terminal. Figure 3 shows the equivalent circuit in the muting circuit. By reducing the voltage of pin to 2.8 V or less, Q will be ON. Also the base voltage of Q2 in the differential circuit that has Q2 and Q3 will be down. When Q2 is OFF, I2 and I dummy circuits will be operated, and it will shut down the input. However, the bias circuit is operating after muting, and it takes power supply current at no signal. 8 pin is the capacitor terminal for reducing the pop noise, and it can make the time constant longer by inserting the capacitor externary. If pin is not used, connect pin and 8 pin, then set the voltage abode 4 V. (2) IC internal muting at VCC OFF When VCC = 8 V or less at VCC off, the detection circuit at VCC off is operated. And the base voltage of Q is reduced and the muting is operated in IC. Dummy amp. Main amp. Reference voltage I I 2 I 3 I 4 I I 6 I 7 V CC 9 The detection circuit at V CC OFF Ω Q Q 2 Q 3 The reference voltage is equal. 3 kω Q Q 9 2 kω Q 7 Q 8 7/2 Q 6 OUT Q 4 Q Q 3 kω 4 Ω 8 2/4 / Mute Mute. TC IN NF 3. The Mounting Place of an Integrated Circuit This IC cannot withstand the strong electromagnetic fields generated by a CRT. These are likely to cause the device to exhibit malfunctions such as leakage. Please ensure that the IC is kept away from CRT. 4. Preventive Measures Against Oscillation Figure 3 To prevent oscillation, it is advisable to use capacitors made of polyester film, which have low temperature and frequency fluctuation daracteristics, as C. The resistance R in series with C performs phase correction at high frequencies and improves the oscillation allowance. () Capacitor rating and type (2) PCB layout Note : Since the oscillation allowance varies according to the PCB layout, it is recommended that a standard Toshiba PCB be used as a reference for design
4 . Heat-sink Be aware of the heat-sink capacity. Use a heat-sink that has high heat conduction. Note 2: Please connected a Heat-sink to GND potential, otherwise THD may deteriorate
5 Standard PCB 2 IN-2 GND IN- TA82AH/AH/6H/8H TOSHIBA V CC (bottom view)
6 Maximum Ratings (Ta = 2 C) Characteristics Symbol Rating Unit Supply voltage V CC V Output current (Peak/ch) I O (peak) 3. A Power dissipation P D (Note 3) 2 W Operation temperature T opr 2~7 C Storage temperature T stg ~ C Note 3: Derated above Ta = 2 C in the proportion of 2 mw/ C. Electrical Characteristics (unless otherwise specified V CC = 37 V, R L = 8 Ω, R g = 6 Ω, f = khz, Ta = 2 C) Characteristics Symbol Test Circuit Test Condition Min Typ. Max Unit Quiescent current I CCQ V in = 7 3 ma Output power P out () THD = % 7 2 P out (2) THD = % Total harmonic distortion THD P out = 2 W..2 % Voltage gain G V V out =.77 Vrms (dbm) db Input resistance R IN 3 kω Ripple rejection ratio R.R. Output noise voltage V no Cross talk C.T. f ripple = Hz V ripple =.77 Vrms (dbm) Rg = kω, BW = 2 Hz~2 khz Rg = kω, V out =.77 Vrms (dbm) W 48 6 db.4.3 mvrms 6 db Mute on voltage Mute-on Mute on GND.4 V Mute off voltage Mute-off Mute off 3.7 V Mute ATT ATT V out =.77 Vrms Mute 6 db Typ. DC Voltage of Each Terminal (V CC = 28 V, Ta = 2 C) Terminal No DC voltage (V) GND V CC GND
7 Test Circuit 47 µf 6 9 µf V CC Ripple Filter 2.2 µf 4 IN AMP 7 µf 47 µf 47 µf 2.2 µf 4 Ω 3 Pre-GND 4 Ω 2 IN2 2 kω 2 kω AMP2 PW-GND Ω 2.2 Ω.2 µf.2 µf µf R L R L Mute. TC 8 µf Mute * V th 2.8 V *: The capacitor for reducing POP noise at mute ON
8 Total harmonic distortion THD (%) 3 Filter : ~3 k k: 4~3 k k: 4~ THD Pout f = khz Hz khz Total harmonic distortion THD (%) f = khz Filter: 4~3 k THD Pout VCC = V Output power P OUT (W) Output power P OUT (W) Total harmonic distortion THD (%) Pout = W Filter ~3 k (f = 2~8) 4~3 k (f = k~2 k) 4~8 k (f = 4 k~6 k) 4~ (f = 8 k~4 k) THD f Voltage gain GV (db) G V f Vout =.77 Vrms. 3 3 k 3k k 3k k Frequency f (Hz) k 3k k 3k k Frequency f (Hz) Ripple rejection ratio R.R. (db) R.R. f Rg = 62 Ω Vripple =.77Vrms Ripple rejection ratio R.R. (db) R.R. Rg fripple = Hz Vripple =.77Vrms k 3k k 3k k k 3k k 3 k Frequency f (Hz) Singnal source resistance Rg (Ω)
9 Cross talk C.T. (db) C.T. f Rg = 62 kω Cross talk C.T. (db) C.T. Rg f = khz Vout =.77Vrms k 3k k 3k k k 3k k 3k k Frequency f (Hz) Singnal source resistance Rg (Ω) Output noise voltage VNO (mvrms) V no Rg B.W = 2Hz~2kHz Output power Pout (W) f = khz THD = % P out V CC 3 3 k 3k k 3k k Singnal source resistance Rg (Ω) Supply voltage VCC (V) Quiescent current ICCQ (ma) I CCQ, V OUT V CC Vin = ICCQ VOUT Output DC voltage VOUT (V) Power dissipation PD (W) 2 2 P D P OUT 42 V 37 V f = khz V 2 2 Supply voltage V CC (V) Output power Pout (W)
10 ATT V mute THD Ta Mute ATT (db) f = khz Vout =.77Vrms Total harmonic distoriont THD (%) f = khz Pout = 2 W Mute control voltage V mute (V) Ambient temperature Ta ( C) R.R. Ta I CCQ Ta Ripple rejection ratio R.R. (db) Rg = 62 Ω Vripple =.77 Vrms fripple = Hz Quiescent current ICCQ (ma) Ambient temperature Ta ( C) Ambient temperature Ta ( C) P D MAX Ta Allowable power dissipation PD MAX (w) : INFINITE HEAT SINK 2: 4. C/W Al HEAT SINK 3: 9. C/W Al HEAT SINK Ambient temperature Ta ( C)
11 Package Dimensions Weight: 4.4 g (typ.)
12 RESTRICTIONS ON PRODUCT USE TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the Handling Guide for Semiconductor Devices, or TOSHIBA Semiconductor Reliability Handbook etc.. The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ( Unintended Usage ). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer s own risk. This product generates heat during normal operation. However, substandard performance or malfunction may cause the product and its peripherals to reach abnormally high temperatures. The product is often the final stage (the external output stage) of a circuit. Substandard performance or malfunction of the destination device to which the circuit supplies output may cause damage to the circuit or to the product. The products described in this document are subject to the foreign exchange and foreign trade laws. The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. The information contained herein is subject to change without notice. 77EBF
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