BMI055 Inertial measurement unit
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1 BMI055 Inertial measurement unit BMI055: Document revision 1.0 Document release date 17 August 2012 Document number BST-BMI055-SP Technical reference code(s) Notes Data in this document are subject to change without notice. Product photos and pictures are for illustration purposes only and may differ from the real product s appearance.
2 Page 2 Index of Contents 1. INNER BOX OUTER VIEW OF REEL BOX INSIDE VIEW REEL BOX REEL OUTER BOX BAR CODE LABELLING REEL DIMENSIONS LEGAL DISCLAIMER ENGINEERING SAMPLES PRODUCT USE APPLICATION EXAMPLES AND HINTS DOCUMENT HISTORY AND MODIFICATION... 9 GmbH reserves all rights even in the event of industrial property rights. We reserve all rights of disposal such as copying and passing on to
3 Page 3 1. Inner box 1.1 Outer view of reel box Box size is approx. 350mm x 350mm x 50mm The inner box contains 1 reel of 5,000 parts Weight of inner box without reel ~0.2kg Weight of inner box with reel ~0.74kg 1.2 Inside view reel box 1.3 Reel GmbH reserves all rights even in the event of industrial property rights. We reserve all rights of disposal such as copying and passing on to
4 Page 4 2. Outer box The size of the outer box depends on delivered quantity Up to 2 reels Size outer box: 420mm x 420mm x 145mm Weight of outer box without reels ~1.08kg Weight of outer box with: 1 reel ~1.8kg 2 reels ~2.6kg Up to 5 reels Size outer box: 420mm x 420mm x 270mm o Weight of outer box without reels ~1.3kg o Weight of outer box with: 3 reels ~3.5kg 4 reels ~4.3kg 5 reels ~5.0kg Up to 9 reels Size outer box: 420mm x 420mm x 390mm Weight of outer box without reels ~1.5kg Weight of outer box with: 6 reels ~6.0kg 7 reels ~6.8kg 8 reels ~7.5kg 9 reels ~8.3kg Up to 11 reels Size outer box: 420mm x 420mm x 540mm Weight of outer box without reels ~2.1kg Weight of outer box with: 10 reels ~9.6kg 11 reels ~11.1kg GmbH reserves all rights even in the event of industrial property rights. We reserve all rights of disposal such as copying and passing on to
5 Page 5 Up to 13 reels Size outer box: 420mm x 420mm x 665mm Weight of outer box without reels ~2.1kg Weight of outer box with: 12 reels ~11.9kg 13 reels ~12.6kg GmbH reserves all rights even in the event of industrial property rights. We reserve all rights of disposal such as copying and passing on to
6 Page 6 3. Bar code labelling Notes: The ink on the label is lead-free Heat-pressure method for label is used Bar code label is on reel and the inner box GmbH reserves all rights even in the event of industrial property rights. We reserve all rights of disposal such as copying and passing on to
7 Page 7 4. Reel dimensions Reel size is 13" 1 reel contains 5,000 parts GmbH reserves all rights even in the event of industrial property rights. We reserve all rights of disposal such as copying and passing on to
8 Page 8 5. Legal disclaimer 5.1 Engineering samples Engineering Samples are marked with an asterisk (*) or (e) or (E). Samples may vary from the valid technical specifications of the product series contained in this data sheet. They are therefore not intended or fit for resale to third parties or for use in end products. Their sole purpose is internal client testing. The testing of an engineering sample may in no way replace the testing of a product series. assumes no liability for the use of engineering samples. The Purchaser shall indemnify from all claims arising from the use of engineering samples. 5.2 Product use products are developed for the consumer goods industry. They may only be used within the parameters of this product data sheet. They are not fit for use in life-sustaining or security sensitive systems. Security sensitive systems are those for which a malfunction is expected to lead to bodily harm or significant property damage. In addition, they are not fit for use in products which interact with motor vehicle systems. The resale and/or use of products are at the purchaser s own risk and his own responsibility. The examination of fitness for the intended use is the sole responsibility of the Purchaser. The purchaser shall indemnify from all third party claims arising from any product use not covered by the parameters of this product data sheet or not approved by Bosch Sensortec and reimburse for all costs in connection with such claims. The purchaser must monitor the market for the purchased products, particularly with regard to product safety, and inform without delay of all security relevant incidents. 5.3 Application examples and hints With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of noninfringement of intellectual property rights or copyrights of any third party. The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. They are provided for illustrative purposes only and no evaluation regarding infringement of intellectual property rights or copyrights or regarding functionality, performance or error has been made. GmbH reserves all rights even in the event of industrial property rights. We reserve all rights of disposal such as copying and passing on to
9 Page 9 6. Document history and modification Rev. No Chapter Description of modification/changes Date 1.0 Document creation 17-August-2012 GmbH Gerhard-Kindler-Strasse Reutlingen / Germany contact@bosch-sensortec.com Modifications reserved Printed in Germany Specifications subject to change without notice Document number: BST-BMI055-SP Revision_1.0_ GmbH reserves all rights even in the event of industrial property rights. We reserve all rights of disposal such as copying and passing on to
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Silicon Variable Capacitance Diodes For FM radio tuners with extended frequency band High tuning ratio at low supply voltage (car radio) Monolithic chip (common cathode) for perfect dual diode tracking
Part Ordering code Type Marking Remarks BAT41 BAT41-TR or BAT41-TAP BAT41 Tape and Reel/Ammopack
Small Signal Schottky Diode Features For general purpose applications This diode features low turn-on voltage and high breakdown voltage. This device e2 is protected by a PN junction guard ring against
Part Ordering code Marking Remarks BAV99-V BAV99-V-GS18 or BAV99-V-GS08 JE Tape and Reel
Small Signal Switching Diode, Dual Features Fast switching speed High conductance Surface mount package ideally suited for automatic insertion Connected in series Lead (Pb)-free component Component in
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LD1085CXX. 3 A low-drop, adjustable positive voltage regulator. Features. Description
3 A low-drop, adjustable positive voltage regulator Features Typical dropout 1.3 V (at 3 A) Three terminal adjustable output voltage Guaranteed output current up to 3 A Output tolerance ± 2 % at 25 C and
BD241A BD241C. NPN power transistors. Features. Applications. Description. NPN transistors. Audio, general purpose switching and amplifier transistors
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STD1802T4-A. Low voltage fast-switching NPN power transistor. Features. Description. Applications
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BD533 BD535 BD537 BD534 BD536
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Dual NPN-PNP complementary Bipolar General features V CE(sat) h FE I C 0.35V >100 1A High gain Low V CE(sat) Simplified circuit design Reduced component count Applications Push-Pull or Totem-Pole configuration
Order codes Marking Package Packaging 2STF SOT-89 2STN2550 N2550 SOT-223. November 2008 Rev 1 1/8
2STF2550 2STN2550 Low voltage high performance PNP power transistors Preliminary Data Features Very low collector-emitter saturation voltage High current gain characteristic Fast switching speed Surface
Order codes Temperature range Package Packaging
CMOS quad 3-state differential line receiver Features CMOS design for low power ± 0.2 V sensitivity over input common mode voltage range Typical propagation delay: 19 ns Typical input hysteresis: 60 mv
BD243C BD244C. Complementary power transistors. Features. Applications. Description. Complementary NPN-PNP devices. Power linear and switching TO-220
BD243C BD244C Complementary power transistors Features. Complementary NPN-PNP devices Applications Power linear and switching Description The device is manufactured in Planar technology with Base Island
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High gain Low Voltage PNP power transistor Features Very low Collector to Emitter saturation voltage D.C. Current gain, h FE >100 1.5 A continuous collector current Applications Power management in portable
2STN2540. Low voltage fast-switching PNP power bipolar transistor. Features. Applications. Description
2STN2540 Low voltage fast-switching PNP power bipolar transistor Features Very low collector-emitter saturation voltage High current gain characteristic Fast switching speed Surface mounting device in
Order codes Marking Package Packaging. STD2805T4 D2805 DPAK Tape & reel STD D2805 IPAK Tube. June 2007 Rev 1 1/9
Low voltage fast-switching PNP power transistor Preliminary Data Features Very low collector to emitter saturation voltage High current gain characteristic Fast-switching speed Surface-mounting DPAK (TO-252)
TIP2955 TIP3055. Complementary power transistors. Features. Applications. Description
TIP2955 TIP3055 Complementary power transistors Features Low collector-emitter saturation voltage Complementary NPN - PNP transistors Applications General purpose Audio Amplifier Description The devices
ST619LBDR. DC-DC converter regulated 5 V charge pump. Features. Description
DC-DC converter regulated 5 V charge pump Features Regulated 5 V ±4 % charge pump Output current guaranteed over temperature: 20 ma (V I 2 V), 30 ma (V I 3 V) No inductors; very low EMI noise Uses small,
LK115XX30 LK115XX33 - LK115XX50
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STEVAL-ISQ010V1. High-side current-sense amplifier demonstration board based on the TSC102. Features. Description
High-side current-sense amplifier demonstration board based on the TSC102 Data brief Features Independent supply and input common-mode voltages Wide common-mode operating range: 2.8 V to 30 V Wide common-mode
TI Designs: Biometric Steering Wheel. Amy Ball TIDA-00292
www.ti.com 2 Biometric Steering Wheel - -Revised July 2014 www.ti.com TI Designs: Biometric Steering Wheel - -Revised July 2014 Biometric Steering Wheel 3 www.ti.com 4 Biometric Steering Wheel - -Revised
2STD1665. Low voltage fast-switching NPN power transistor. Features. Applications. Description
Low voltage fast-switching NPN power transistor Features Very low collector to emitter saturation volatage High current gain characteristic Fast-switching speed Through-hole IPAK (TO-251) power package
Obsolete Product(s) - Obsolete Product(s) Obsolete Product(s) - Obsolete Product(s)
5 A low dropout fast response positive voltage regulator adjustable Features Typical dropout 1.2 V Fast transient response Three terminal adjustable Guaranteed output current up to 5 A Output tolerance
Order codes Temperature range Package Packaging
CMOS quad 3-state differential line driver Features TTL input compatible Typical propagation delay: 6 ns Typical output skew: 0.5 ns Output will not load line when V CC = 0 V Meets the requirements of
STB High voltage fast-switching NPN power transistor. Features. Applications. Description
High voltage fast-switching NPN power transistor Features Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speed Through hole TO-262 (I 2 PAK) power
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PNP power Darlington transistor Features Monolithic Darlington configuration Integrated antiparallel collector-emitter diode Application Linear and switching industrial equipment Description The TIP145
Part Ordering code Type Marking Remarks BAT85S BAT85S-TR or BAT85S-TAP BAT85S Tape and Reel/Ammopack
BAT85S Small Signal Schottky Diode Features Integrated protection ring against static discharge Very low forward voltage AEC-Q0 qualified Compliant to RoHS directive 2002/95/EC and in accordance to WEEE
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High power PNP epitaxial planar bipolar transistor Features High breakdown voltage V CEO = -250 V Complementary to 2STC5949 Typical f t = 25 MHz Fully characterized at 125 o C Application Audio power amplifier
L4940xx5 L4940V5 L4940D2T5-TR 5 V L4940xx85 L4940V85 L4940P85 L4940D2T85-TR 8.5 V L4940xx10 L4940D2T10-TR 10 V L4940xx12 L4940D2T12-TR 12 V
Very low drop 1.5 A regulator Features Precise 5, 8.5, 10, 12 V outputs Low dropout voltage (450 mv typ. at 1 A) Very low quiescent current Thermal shutdown Short circuit protection Reverse polarity protection
ILD2035. MR16 3 W Control Board with ILD2035. Application Note AN214. Industrial and Multimarket. Revision: 1.0 Date:
ILD2035 MR16 3 W Control Board with ILD2035 Application Note AN214 Revision: 1.0 Date: Industrial and Multimarket Edition Published by Infineon Technologies AG 81726 Munich, Germany 2011 Infineon Technologies
Distributed by: www.jameco.com 1-800-831-4242 The content and copyrights of the attached material are the property of its owner. 1.5A Low drop positive voltage regulator adjustable and fixed Feature summary
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Low power high speed RS-485/RS-422 transceiver Features Low supply current: 5 ma max -7 V to 12 V common mode input voltage range 70 mv typical input hysteresis Designed for 25 Mbps operation Operate from
IDW100E60. Fast Switching Emitter Controlled Diode. IFAG IPC TD VLS 1 Rev
Fast Switching Emitter Controlled Diode Features: 600V Emitter Controlled technology Fast recovery Soft switching Low reverse recovery charge Low forward voltage 175 C junction operating temperature Easy
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Order codes Marking Polarity Package Packaging. MJD44H11T4 MJD44H11 NPN DPAK Tape and reel MJD45H11T4 MJD45H11 PNP DPAK Tape and reel
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TIP33C Complementary power transistors Features. Low collector-emitter saturation voltage Complementary NPN - PNP transistors Applications General purpose Description The devices are manufactured in epitaxial-base
BUL39D. High voltage fast-switching NPN power transistor. Features. Application. Description
High voltage fast-switching NPN power transistor Features Integrated antiparallel collector-emitter diode High voltage capability Low spread of dynamic parameters Minimum lot-to-lot spread for reliable
2STC4468. High power NPN epitaxial planar bipolar transistor. Features. Application. Description
High power NPN epitaxial planar bipolar transistor Features High breakdown voltage V CEO = 140 V Complementary to 2STA1695 Typical f t = 20 MHz Fully characterized at 125 o C Application Audio power amplifier
IDW75E60. Fast Switching Emitter Controlled Diode. IFAG IPC TD VLS 1 Rev
Fast Switching Emitter Controlled Diode Features: 600V EmCon technology Fast recovery Soft switching Low reverse recovery charge Low forward voltage 175 C junction operating temperature Easy paralleling
TR136. High voltage fast-switching NPN power transistor. Features. Applications. Description
TR136 High voltage fast-switching NPN power transistor Features High voltage capability Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speed Applications
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RF power transistor the LdmoST plastic family Features Excellent thermal stability Common source configuration Broadband performances P OUT = 1 W with 15 db gain @ 870 MHz Plastic package ESD protection
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High Gain Low Voltage PNP Power Transistor General features Very low Collector to Emitter saturation voltage D.C. Current gain, h FE >100 1.5 A continuous collector current In compliance with the 2002/93/EC
2STX2220. High Gain Low Voltage PNP Power Transistor. General features. Description. Internal schematic diagram. Applications.
High Gain Low Voltage PNP Power Transistor General features Very low Collector to Emitter saturation voltage D.C. Current gain, h FE >100 1.5 A continuous collector current In compliance with the 2002/93/EC
DB Evaluation board using PD85004 for 900 MHz 2-way radio. Features. Description
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BULB7216 BUL7216. High voltage fast-switching NPN power transistor. Features. Applications. Description
BULB7216 BUL7216 High voltage fast-switching NPN power transistor Features Low spread of dynamic parameters High voltage capability Minimum lot-to-lot spread for reliable operation Very high switching
BAT48 Series. Small signal Schottky diodes. Main product characteristics. Features and benefits. Order codes. Description. BAT48ZFILM (Single) SOD-123
Small signal Schottky diodes Main product characteristics I F V RRM C (typ) T j (max) 350 ma 40 V 18 pf 150 C SOD-123 BAT48ZFILM (Single) Features and benefits Low leakage current losses Negligible switching
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Low voltage fast-switching PNP power transistor Features Very low collector-emitter saturation voltage High current gain characteristic Fast switching speed 3 Miniature SOT-23 plastic package for surface
2STR2215. Low voltage fast-switching PNP power transistor. Features. Applications. Description
Low voltage fast-switching PNP power transistor Features Very low collector-emitter saturation voltage High current gain characteristic Fast switching speed Miniature SOT-23 plastic package for surface
2STA1943. High power PNP epitaxial planar bipolar transistor. Features. Application. Description
High power PNP epitaxial planar bipolar transistor Features High breakdown voltage V CEO > -230V Complementary to 2STC5200 Fast-switching speed Typical f T = 30 MHz Application Audio power amplifier Description
SD1728 (TH430) RF & Microwave transistors HF SSB application. Features. Description. Pin connection
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SGSD100 SGSD200. Complementary power Darlington transistors. Features. Applications. Description
SGSD100 SGSD200 Complementary power Darlington transistors Features Complementary NPN - PNP transistors Monolithic Darlington configuration Applications Audio power amplifier DC-AC converter Easy driver
2ST2121. High power PNP epitaxial planar bipolar transistor. Features. Applications. Description 1 2 TO-3
High power PNP epitaxial planar bipolar transistor Features High breakdown voltage V CEO = -250 V Complementary to 2ST5949 Typical f t = 25 MHz Fully characterized at 125 o C Applications Audio power amplifier
S07B / 07D / 07G / 07J / 07M
Small Signal Fast Switching Diode, High Voltage Features For surface mounted applications Low profile package Ideal for automated placement Glass passivated High temperature soldering: 260 C/ 10 seconds
HCF4093. QUAD 2-input NAND Schmidt trigger. Features. Description
QUAD 2-input NAND Schmidt trigger Features Schmidt trigger action on each input with no external components Hysteresis voltage typically 0.9 V at V DD =5V and 2.3 V at V DD =10 V Noise immunity greater
TS V micropower shunt voltage reference. Features. Applications. Description
2. micropower shunt voltage reference Features 2.5 typical output voltage Ultra low current consumption: 4µA typ. High precision @ 25 C ±2% (standard version) ±1% (A grade) High stability when used with
LM323. Three-terminal 3 A adjustable voltage regulators. Features. Description
Three-terminal 3 A adjustable voltage regulators Features Output current: 3 A Internal current and thermal limiting Typical output impedance: 0.01 W Minimum input voltage: 7.5 V Power dissipation: 30 W
TLHE / G / K / P510. High Intensity LED, 5 mm Untinted Non-Diffused VISHAY. Vishay Semiconductors
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Low Drop Voltage Regulator TLE
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STX616. High voltage NPN power transistor. Features. Applications. Description
STX616 High voltage NPN power transistor Features High voltage capability High DC current gain Minimum lot-to-lot spread for reliable operation Applications Switching mode power supply Battery charger
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Low power single inverter gate Features High speed: t PD = 4.3 ns (max.) at V CC = 2.3 V Power down protection on inputs and outputs Balanced propagation delays: t PLH t PHL Operating voltage range: V
2STC5242. High power NPN epitaxial planar bipolar transistor. Features. Application. Description
2STC5242 High power NPN epitaxial planar bipolar transistor Features High breakdown voltage V CEO = 230 V Complementary to 2STA1962 Fast-switching speed Typical f T = 30 MHz Application Audio power amplifier
BAS81 / 82 / 83. Small Signal Schottky Diodes. Vishay Semiconductors. Features Integrated protection ring against static discharge
Small Signal Schottky Diodes Features Integrated protection ring against static discharge e2 Low capacitance Low leakage current Low forward voltage drop Very low switching time Lead (Pb)-free component
Symbol Parameter Conditions Min Typ Max Unit V F forward voltage I F =10mA V P ZSM. non-repetitive peak reverse power dissipation
Rev. 5 26 January 2011 Product data sheet 1. Product profile 1.1 General description Low-power voltage regulator diodes in small hermetically sealed glass SOD80C Surface-Mounted Device (SMD) packages.
Obsolete Product(s) - Obsolete Product(s)
Low forward voltage TVS: Transky Main applications Power rail ESD transient over-voltages and reverse voltages protection for 5 and 12 V supplied IC s Description The Transky is designed specifically for
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High voltage fast-switching NPN Power transistor General features High voltage and high current capability Low spread of dynamic parameters Low base-drive requirements Very high switching speed High ruggedness
Part Number Marking Package Packing. MD1802FX MD1802FX ISOWATT218FX Tube. August 2006 Rev 1 1/8
High voltage NPN Power transistor for standard Definition CRT display Preliminary Data General features State-of-the-art technology: Diffused collector Enhanced generation More stable performances versus
LM723CN. High precision voltage regulator. Features. Description
High precision voltage regulator Features Input voltage up to 40 V Output voltage adjustable from 2 to 37 V Positive or negative supply operation Series, shunt, switching or floating operation Output current
PIN Diode Chips Supplied on Film Frame
DATA SHEET PIN Diode Chips Supplied on Film Frame Applications Switches Attenuators Features Preferred device for module applications PIN diodes supplied are 00% tested, saw cut, and mounted on film frame
Part Ordering code Type Marking Remarks BAS85 BAS85-GS18 or BAS85-GS08 - Tape and Reel
Small Signal Schottky Diode Features For general purpose applications This diode features low turn-on voltage e2 The devices are protected by a PN junction guard ring against excessive voltage, such as
MD1802FX. High voltage NPN power transistor for standard definition CRT display. Features. Applications. Description
High voltage NPN power transistor for standard definition CRT display Features State-of-the-art technology: Diffused collector Enhanced generation Stable performances versus operating temperature variation
Low noise low drop voltage regulator with shutdown function. Part numbers
Low noise low drop voltage regulator with shutdown function Features Output current up to 150 ma Low dropout voltage (350 mv at I OUT = 50 ma) Very low quiescent current: 0.1 µa in OFF mode and max. 250
STB13007DT4. High voltage fast-switching NPN power transistor. General features. Internal schematic diagram. Description. Applications.
High voltage fast-switching NPN power transistor General features Improved specification: Lower leakage current, Tighter gain range, DC current gain preselection, Tighter storage time range High voltage
SMV LF and SMV LF: Surface Mount, 0402 Hyperabrupt Tuning Varactor Diodes
DATA SHEET SMV1247-040LF and SMV1249-040LF: Surface Mount, 0402 Hyperabrupt Tuning Varactor Diodes Applications Wide bandwidth VCOs Wide voltage range, tuned phase shifters and filters Features High capacitance
ST1510FX. High voltage fast-switching NPN Power transistor. General features. Applications. Internal schematic diagram. Description.
High voltage fast-switching NPN Power transistor General features State-of-the-art technology: Diffused collector Enhanced generation EHVS1 More stable performances versus operating temperature variation
BAS19-V / 20-V / 21-V
Small Signal Switching Diodes, High Voltage BAS19-V / 20-V / 21-V Features Silicon Epitaxial Planar Diode Fast switching diode in case SOT-23, especially suited for automatic insertion. e3 These diodes
Technical Report <TR130>
, 2009-Apr-23 Technical Report Technical Report Device: BGB741L7ESD Application: 50Ω-Matched LNA for FM Application 80-110MHz Revision: Rev. 1.0 Date: 2009-Apr-23 RF and Protection Devices Measurement
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High voltage fast-switching NPN power transistor Features High voltage capability Minimum lot-to-lot spread for reliable operation ery high switching speed Applications Electronic ballast for fluorescent
TDCG1050M, TDCG1060M, TDCR1050M, TDCR1060M Clock Display
,,, Clock Display DESCRIPTION 16770 Four digit display, with 10 mm digit charactersize. Designed as clock display with active colon between digit two and three. FEATURES High efficient AlInGAP technology
ST202EB - ST202EC ST232EB - ST232EC
ST202EB - ST202EC ST232EB - ST232EC ± 15 kv ESD protected 5 V RS-232 transceiver Features ESD protection for RS-232 I/O pins: ± 15 kv human body model Guaranteed 230 kbps date rate Guaranteed slew rate
Absolute Maximum Ratings T amb = 25 C, unless otherwise specified Parameter Test condition Part Symbol Value Unit
Fast Avalanche Sinterglass Diode Features Glass passivated junction Hermetically sealed package Low reverse current Soft recovery characteristics Lead (Pb)-free component Component in accordance to RoHS
Obsolete Product(s) - Obsolete Product(s)
Three-terminal 5 A adjustable voltage regulators Features Guaranteed 7 A peak output current Guaranteed 5 A output current Adjustable output down to 1.2 V Line regulation typically 0.005 %/V Load regulation
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P-channel 20V - 0.065Ω - 4.2A - SOT-223 2.5V - Drive STripFET II Power MOSFET General features Type V DSS R DS(on) I D STN5PF02V 20V
Clock Display FEATURES APPLICATIONS. (nm) I F I F
Clock Display DESCRIPTION 16770 Four digit display, with 10 mm digit charactersize. Designed as clock display with active colon between digit two and three. FEATURES High efficient AlInGAP technology Dark
ST485AB. Very high speed low power RS-485/RS-422 transceiver. Features. Description
Very high speed low power RS-485/RS-422 transceiver Features Low supply current: 5 ma max High data rate > 30 Mbps Designed for RS 485 interface applications -7 to 12 common mode input voltage range Driver
Emitter Controlled 4 High Power Technology IDC73D120T8H
Diode Emitter Controlled 4 High Power Technology Data Sheet Industrial Power Control Table of Contents Features and Applications... 3 Mechanical Parameters... 3 Maximum Ratings... 4 Static and Electrical
Obsolete Product(s) - Obsolete Product(s)
6 V power Schottky silicon carbide diode Features No or negligible reverse recovery Switching behavior independent of temperature Particularly suitable in PFC boost diode function Description The SiC diode
MEMS Sensors as enablers for IoTS Shanghai, 17 th of March 2014 百里博 / Leopold Beer Regional President Asia Pacific
- The MEMS Technology Leader MEMS Sensors as enablers for IoTS Shanghai, 17 th of March 2014 百里博 / Leopold Beer Regional President Asia Pacific 1 Marketing 17/03/2014 GmbH 2013. All rights reserved, also
High voltage NPN Power transistor for standard definition CRT display. R BE =60Ω typ. Order code Marking Package Packing
High voltage NPN Power transistor for standard definition CRT display Features State-of-the-art technology: Diffused collector enhanced generation Stable performance versus operating temperature variation