BioMon Sensor Datasheet Version 1.1 SFH7050

Transcription

1 ! BioMon Sensor Datasheet Version 1.1 Features: Multi chip package featuring 3 emitters and one detector Small package: (WxDxH) 4.7 mm x 2.5 mm x 0.9 mm Light Barrier to block optical crosstalk 7 Applications Heart rate monitoring Pulse oximetry for: Wearable devices (e.g. smart watches, fitness trackers,...) Mobile devices Ordering Information BioMon Type: Ordering Code Q65111A

2 Pin configuration Pin Name Function 1 GC Green LED Cathode 2 GA Green LED Anode 3 RA Red LED Anode 4 PA Photodiode Anode 5 PC Photodiode Cathode 6 RC Red LED Cathode 7 IA Infrared LED Anode 8 IC Infrared LED Cathode Block diagram

3 Maximum Ratings (T A = 25 C) Parameter Symbol Values Unit General Operating temperature range T op C Storage temperature range T stg C ESD withstand voltage V ESD 2 kv (acc. to ANSI/ ESDA/ JEDEC JS HBM) Infrared Emitter Reverse Voltage V R 5 V Forward current I F (DC) 60 ma Surge current I FSM 1 A (t p = 100 µs, D = 0) Red Emitter Reverse voltage V R 12 V Forward current I F (DC) 40 ma Surge current I FSM 600 ma (t p = 100 µs, D = 0) Green Emitter Reverse voltage V R not designed for reverse V operation Forward current I F (DC) 25 ma Surge current I FSM 300 ma (t p = 100 µs, D = 0) Detector Reverse voltage V R 16 V Note: The stated maximum ratings refer to single emitter chip operation, unless otherwise specified

4 Characteristics (T A = 25 C) Parameter Symbol Value Unit Infrared Emitter Wavelength of peak emission (typ.) peak 950 nm Centroid Wavelength (typ. centroid 940 (±10) nm (max.)) Spectral bandwidth at 50% of I max (typ.) 42 nm Half angle (typ.) ± 60 Rise and fall time of I e (10% and 90% of I e max ) (I F = 100 ma, t p = 16 µs, R L = 50 ) (typ.) t r, t f 16 ns Forward voltage (typ. (max.)) V F 1.3 ( 1.8) V Reverse current I R not designed for reverse µa operation Radiant intensity (typ.) I e 2 mw / sr Total radiant flux (typ.) e 5.3 mw Temperature coefficient of I e or e (typ.) TC I -0.3 % / K Temperature coefficient of V F (typ.) TC V -0.8 mv / K Temperature coefficient of centroid (typ.) TC centroid 0.25 nm / K

5 Characteristics (T A = 25 C) Parameter Symbol Value Unit Red Emitter Wavelength of peak emission (typ.) peak 660 nm (I F = 20 ma) Centroid Wavelength (typ. centroid 655 (±3) nm (I F = 20 ma) (max.)) Spectral bandwidth at 50% of I max (typ.) 17 nm (I F = 20 ma) Half angle (typ.) ± 60 Rise and fall time of I e (10% and 90% of I e max ) (I F = 100 ma, t p = 16 µs, R L = 50 ) (typ.) t r, t f 17 ns Forward voltage (I F = 20 ma) Reverse current Radiant intensity Total radiant flux Temperature coefficient of centroid (I F = 20 ma, -10 C T 100 C) (typ. (max.)) (typ. (max.)) V F 2.1 ( 2.8) V I R not designed for reverse operation (typ.) I e 2.6 mw / sr µa (typ.) e 6.4 mw (typ.) TC centroid 0.13 nm / K

6 Characteristics (T A = 25 C) Parameter Symbol Value Unit Green Emitter Wavelength of peak emission (typ.) peak 525 nm (I F = 20 ma) Centroid Wavelength (typ. centroid 530 (±10) nm (I F = 20 ma) (max.)) Spectral bandwidth at 50% of I max (typ.) 34 nm (I F = 20 ma) Half angle (typ.) ± 60 Rise and fall time of I e (10% and 90% of I e max ) (I F = 100 ma, t p = 16 µs, R L = 50 ) (typ.) t r, t f 32 ns Forward voltage (I F = 20 ma) (typ. (max.)) V F 3.4 ( 4.4) V Reverse current I R not designed for reverse µa operation Radiant intensity (typ.) I e 1.3 mw / sr Total radiant flux (typ.) e 2.9 mw Temperature coefficient of centroid (typ.) TC centroid 0.03 nm / K (I F = 20 ma, -10 C T 100 C) Temperature coefficient of V F (I F = 20 ma, -10 C T 100 C) (typ.) TC V mv / K

7 Characteristics (T A = 25 C) Parameter Symbol Value Unit Detector Photocurrent (typ.) I P, µa (E e = 0.1 mw/cm 2, = 530 nm, V R = 5 V) Photocurrent (typ.) I P, µa (E e = 0.1 mw/cm 2, = 655 nm, V R = 5 V) Photocurrent (typ.) I P, µa (E e = 0.1 mw/cm 2, = 940 nm, V R = 5 V) Wavelength of max. sensitivity (typ.) S max 920 nm Spectral range of sensitivity (typ.) 10% nm Radiation sensitive area (typ.) A 1.7 mm 2 Dimensions of radiant sensitive area (typ.) L x W 1.3 x 1.3 mm x mm Dark current (V R = 5 V, Ee = 0 mw/cm 2 ) Spectral sensitivity of the chip ( = 530 nm) Spectral sensitivity of the chip ( = 655nm) Spectral sensitivity of the chip ( = 940 nm) Open-circuit voltage (E e = 0.1 mw/cm 2, = 530 nm) Short-circuit current (E e = 0.1 mw/cm 2, = 530 nm) Open-circuit voltage (E e = 0.1 mw/cm 2, = 655nm) Short-circuit current (E e = 0.1 mw/cm 2, = 655 nm) Open-circuit voltage (E e = 0.1 mw/cm 2, =940 nm) Short-circuit current (E e = 0.1 mw/cm 2, = 940 nm) (typ. (max.)) I R 1 ( 5) na (typ.) S A / W (typ.) S A / W (typ.) S A / W (typ.) V O, mv (typ.) I SC, µa (typ.) V O, mv (typ.) I SC, µa (typ.) V O, mv (typ.) I SC, µa

8 Characteristics (T A = 25 C) Parameter Symbol Value Unit Rise and fall time (V R = 3.3 V, R L = 50, = 940 nm) Forward voltage (I F = 10 ma, E = 0 mw/cm 2 ) Capacitance (V R = 5 V, f = 1 MHz, E = 0 mw/cm 2 ) (typ.) t r, t f 2.3 µs (typ.) V F 0.9 V (typ.) C 0 5 pf

9 Diagrams for infrared emitter Relative spectral emission 1) I rel = f( ), T A = 25 C, I F = 20 ma Forward current 1) I F = f(v F ), single pulse, t p = 100 µs, T A = 25 C Relative radiant flux 1) e / e (20 ma) = f(i F ), single pulse, t p = 25µs, T A = 25 C

10 Diagrams for infrared emitter Max. permissible forward current 1) I F,max = f(t A ), R thja = 800 K/W Permissible pulse handling capability 1) I F = f(t p ), T A = 40 C, duty cycle D = parameter Permissible pulse handling capability 1) I F = f(t p ), T A = 85 C, duty cycle D = parameter

11 Diagrams for red emitter Relative spectral emission 1) I rel = f( ), T A = 25 C, I F = 20 ma Forward current 1) I F = f(v F ), T A = 25 C Relative radiant flux 1) e / e (20 ma) = f(i F ), single pulse, t p = 25µs, T A = 25 C

12 Diagrams for red emitter Max. permissible forward current 1) I F,max = f(t A ), R thja = 800 K/W Permissible pulse handling capability 1) I F = f(t p ), T A = 40 C, duty cycle D = parameter Permissible pulse handling capability 1) I F = f(t p ), T A = 85 C, duty cycle D = parameter

13 Diagrams for green emitter Relative spectral emission 1) I rel = f( ), T A = 25 C, I F = 20 ma Forward current 1) I F = f(v F ), T A = 25 C Relative radiant flux 1) e / e (20 ma) = f(i F ), single pulse, t p = 25µs, T A = 25 C

14 Diagrams for green emitter Max. permissible forward current 1) I F,max = f(t A ), R thja = 800 K/W Permissible pulse handling capability 1) I F = f(t p ), T A = 40 C, duty cycle D = parameter Permissible pulse handling capability 1) I F = f(t p ), T A = 85 C, duty cycle D = parameter

15 Diagrams for detector Relative spectral sensitivity 1) S rel = f( ), T A = 25 C Photocurrent 1) I P (V R = 5 V), T A = 25 C Dark current 1) I R = f(v R ), E = 0 mw/cm 2, T A = 25 C Capacitance 1) C = f(v R ), f = 1 MHz, E = 0 mw/cm 2, T A = 25 C

16 Directional characteristics of detector 1) S rel = f( ) OHL01660 ϕ Radiation characteristics of emitters 1) I rel = f( )

17 Package Outline Dimensions in mm. Package: chip on board Approximate Weight: 18 mg

18 Recommended solder pad design Dimensions in mm (inch). Reflow Soldering Profile Product complies to MSL Level 4 acc. to JEDEC J-STD-020D C T C 217 C t P t L OHA04525 T p 245 C 150 t S C s 300 t

19 Profile Feature Profil-Charakteristik Ramp-up rate to preheat* ) 25 C to 150 C Time t S T Smin to T Smax Ramp-up rate to peak* ) T Smax to T P Liquidus temperature Time above liquidus temperature Symbol Symbol t S T L t L Minimum 60 Pb-Free (SnAgCu) Assembly Recommendation 2 3 K/s Maximum OHA04612 Unit Einheit s K/s C s Peak temperature Time within 5 C of the specified peak temperature T P - 5 K Ramp-down rate* T P to 100 C Time 25 C to T P T P t P All temperatures refer to the center of the package, measured on the top of the component * slope calculation DT/Dt: Dt max. 5 s; fulfillment for the whole T-range C s K/s s Method of Taping Dimensions in mm [inch]

20 Tape and Reel 12 mm tape with 3000 pcs. on 180 mm reel W 1 D 0 P 0 P 2 F E W A N 13.0 ±0.25 P 1 Label Direction of unreeling Dimensions in mm Tape Dimensions [mm] W 2 Direction of unreeling Leader: min. 400 mm * Trailer: min. 160 mm * *) Dimensions acc. to IEC ; EIA 481-D W P 0 P 1 P 2 D 0 E F / ±0.1 4 ±0.1 2 ± ± ± ±0.05 OHAY0324 Reel Dimensions [mm] A W N min W 1 W 2max

21 _< 10% RH. C). LEVEL If blank, see bar code label _< WET Please check the HIC immidiately after bag opening. Discard if circles overrun. Avoid metal contact. Do not eat. Version 1.1 Barcode-Product-Label (BPL) OSRAM Opto po Semiconductors ors EXA AMP AMD/MP MPL PLE (6P) BATCH ENO: : XA(9D AMD) D C (1T) LOT NO: (9D) D/C: 1234 M234 M: (X) PROD NO: (Q)QTY: 9999 (G) GROUP: LX XXXX RoHS Compliant AM DEMY BIN1: XX-XX-X-XXX-X ML Temp ST X XXX C X Pack: RXX DEMY XXX X_X123_ _ X XX-XX-X-X X-X-X OHA04563 Dry Packing Process and Materials OSRAM Moisture-sensitive label or print Barcode label Humidity indicator Barcode label 15% 10% Comparator check dot 5% If wet, parts still adequately dry. change desiccant If wet, examine units, if necessary bake units If wet, examine units, if necessary bake units CAUTION This bag contains MOISTURE SENSITIVE OPTO SEMICONDUCTORS 1. Shelf life in sealed bag: 24 months at < 40 C and < 90% relative humidity (RH). 2. After this bag is opened, devices that will be subjected to infrared reflow, vapor-phase reflow, or equivalent processing (peak package body temp. If blank, see bar code label a) Mounted within at factory conditions of 30 C/60% RH. Floor time see below b) Stored at 3. Devices require baking, before mounting, if: a) Humidity Indicator Card is > 10% when read at 23 C ± 5 C, or b) 2a or 2b is not met. 4. If baking is required, reference IPC/JEDEC J-STD-033 for bake procedure. Bag seal date (if blank, seal date is identical with date code). Date and time opened: Moisture Level 1 Floor time > 1 Year Moisture Level 4 Floor time 72 Hours Moisture Level 2 Floor time 1 Year Moisture Level 5 Floor time 48 Hours Moisture Level 2a Floor time 4 Weeks Moisture Level 5a Floor time 24 Hours Moisture Level 3 Floor time 168 Hours Moisture Level 6 Floor time 6 Hours Desiccant Humidity Indicator MIL-I-8835 OSRAM OHA00539 Note: Moisture-sensitive product is packed in a dry bag containing desiccant and a humidity card. Regarding dry pack you will find further information in the internet. Here you will also find the normative references like JEDEC

22 _< 10% RH. C). If blank, see bar code label _< (1T) LOT NO: (9D) D/C: 0144 LSY T676 Bin1: P-1-20 Bin2: Q-1-20 Bin3: ML Temp ST C R 2a 240 C R C RT Additional TEXT R077 PACKVAR: (G) GROUP: P-1+Q-1 (1T) LOT NO: 11 (9D) D/C: LSY T676 Bin1: P-1-20 Bin2: Q-1-20 Bin3: ML Temp ST 2 2a 220 C R 240 C R C RT Additional TEXT R077 PACKVAR: (G) GROUP: P-1+Q-1 Version 1.1 Transportation Packing and Materials Barcode label Barcode label CAUTION LEVEL This bag contains MOISTURE SENSITIVE OPTO SEMICONDUCTORS 1. Shelf life in sealed bag: 24 months at < 40 C and < 90% relative humidity (RH). 2. After this bag is opened, devices that will be subjected to infrared reflow, vapor-phase reflow, or equivalent processing (peak package body temp. If blank, see bar code label a) Mounted within at factory conditions of 30 C/60% RH. Floor time see below b) Stored at 3. Devices require baking, before mounting, if: a) Humidity Indicator Card is > 10% when read at 23 C ± 5 C, or b) 2a or 2b is not met. 4. If baking is required, reference IPC/JEDEC J-STD-033 for bake procedure. Bag seal date (if blank, seal date is identical with date code). Date and time opened: Moisture Level 1 Floor time > 1 Year Moisture Level 4 Floor time 72 Hours Moisture Level 2 Floor time 1 Year Moisture Level 5 Floor time 48 Hours Moisture Level 2a Floor time 4 Weeks Moisture Level 5a Floor time 24 Hours Moisture Level 3 Floor time 168 Hours Moisture Level 6 Floor time 6 Hours OSRAM Opto Semiconductors (6P) BATCH NO: GH1234 Muster (X) PROD NO: (Q)QTY: 2000 Multi TOPLED R18 DEMY OSRAM Opto Semiconductors (6P) BATCH NO: GH1234 Muster (X) PROD NO: 1 Multi TOPLED 4 5 (Q)QTY: 2000 R18 DEMY OSRAM Packing Sealing label OHA02044 Dimensions of transportation box in mm Width Length Height 195 ± ± 5 42 ±

23 Disclaimer Language english will prevail in case of any discrepancies or deviations between the two language wordings. Attention please! The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our Sales Organization.?If printed or downloaded, please find the latest version in the Internet. Packing Please use the recycling operators known to you. We can also help you get in touch with your nearest sales office.?by agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Components used in life-support devices or systems must be expressly authorized for such purpose! Critical components* may only be used in life-support devices** or systems with the express written approval of OSRAM OS. *) A critical component is a component used in a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or the effectiveness of that device or system. **) Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain human life. If they fail, it is reasonable to assume that the health and the life of the user may be endangered. Glossary 1) Typical Values: Due to the special conditions of the manufacturing processes of LED and photodiodes, the typical data or calculated correlations of technical parameters can only reflect statistical figures. These do not necessarily correspond to the actual parameters of each single product, which could differ from the typical data and calculated correlations or the typical characteristic line. If requested, e.g. because of technical improvements, these typ. data will be changed without any further notice. Published by OSRAM Opto Semiconductors GmbH Leibnizstraße 4, D Regensburg All Rights Reserved