Hybrid Pulsed Laser Diode with Integrated Driver Stage 70 W Peak Power Version 1.2

Transcription

1 Hybrid Pulsed Laser Diode with Integrated Driver Stage 7 W Peak Power ersion 1.2 SPL LL9_3 Features: Low cost, small size plastic package Integrated FET and capacitors for pulse control Strained InAIGaAs/GaAs QW-structures High power large-optical-cavity laser structure Nanostack laser technology including multiple epitaxially stacked emitters The product qualification test plan is based on the guidelines of AE-Q11-RE-, Stress Test Qualification for Automotive Grade Discrete Semiconductors. High-speed operation (< 3 ns pulse width) Low supply voltage (< 2 ) Applications Range finding Security, surveillance Illumination, ignition Testing and measurement Notes Depending on the mode of operation, these devices emit highly concentrated non visible infrared light which can be hazardous to the human eye. Products which incorporate these devices have to follow the safety precautions given in IE "Safety of laser products". Ordering Information Type: Number of emitters Peak wavelength Peak output power Ordering ode λ peak SPL LL9_ Q6511A19 P opt

2 SPL LL9_3 Maximum Ratings (short time operation / kurzzeitiger Betrieb, T A = 25 ) Parameter Symbol alues Unit Peak output power P peak 8 W harge voltage ( G = 15 ) haracteristics (T A = 25 ) 2 Gate voltage G Duty cycle dc.1 % Operating temperature T op Junction temperature 1) page 7 T j 15 Storage temperature range T stg Soldering temperature (t max = 1 s) T s 26 Parameter Symbol alues Unit min typ max Emission wavelength 2) page 7 λ peak nm Spectral width (FWHM) 2) page 7 λ 7 nm Peak output power 2) page 7 P opt W harge voltage at laser threshold U, th Pulse width (FWHM) 2) page 7, 3) page 7 t P ns Rise time 2) page 7, 3) page 7 t r ns Fall Time 2) page 7, 3) page 7 t f ns Jitter (regarding trigger signal and optical pulse) t j 17 5 ps Aperture size w x h 2 x 1 Beam divergence (FWHM) parallel to pn-junction 2) page 7 Θ Beam divergence (FWHM) perpendicular to Θ pn-junction 2) page 7 µm x µm Temperature coefficient of wavelength λ / T.3.33 nm / K Thermal resistance R th 2 K / W Switch on gate voltage G on

3 SPL LL9_3 Optical Output Power vs. harge oltage P opt = f( ), t p = 3 ns P opt 9 W khz OHL khz Relative Spectral Emission I rel = f(λ), P opt = 7 W, t p = 3 ns I rel OHL nm 94 λ Far-Field Distribution Parallel to pn-junction I rel = f(θ II ), P opt = 7 W, t p = 3 ns 1. OHL196 Far-Field Distribution Perpendicular to pn-junction I rel = f(θ ), P opt = 7 W, t p = 3 ns 1. OHL197 I rel.75 I rel Deg 4 θ Deg 4 θ

4 SPL LL9_3 Optical Output Power vs. harge oltage P opt = f( ), tp = 3 ns, PRF = 1 khz P opt 9 W T A = OHL198 Max. harge oltage vs. Ambient Temperature max = f(t A ), t p = 3 ns, 19, chip temp. 15 max khz 2 khz 3 khz 4 khz OHL T A Peak Output Power at Max. harge oltage vs. Ambient Temperature P opt = f(t A ), t p = 3 ns P opt 8 W 7 6 OHL khz 1 khz 2 khz 3 khz 4 khz T A

5 SPL LL9_3 Package Outline ref. to leadframe centerline ±5 2.4 (.94) ±.2 (.8) 4.9 (.193) ±.2 (.8) 1.5 (.41) ±.3 (.12) +.4 (.16) -.25 (.1) 1.35 (.53) ±.2 (.8) R.3 (.12) (12.2 (.48)).3 (.12) Laser Diode (2.35 (.93)) 8.6 (.339) ±.4 (.16) 5 (.197) ±.2 (.8).5 (.2) ±.1 (.4) (.) ±.1 (.4) Surface not flat 2.5 (.98) ±.2 (.8) spacing 1.27 (.5) (.) ±.1 (.4) (.) ±.1 (.4) 25.2 (.992) 24.2 (.953) (.) ±.1 (.4) 1.8 (.71) 1.2 (.47) 2 1 Trigger G G FET D S.5 (.2) ±.1 (.4) spacing 2.54 (.1).6 (.24).4 (.16) 3 GND Laser diode R.25 (.1) Dimensions in mm (inch). GWOY

6 SPL LL9_3 Disclaimer Language english will prevail in case of any discrepancies or deviations between the two language wordings. Attention please! The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our Sales Organization. If printed or downloaded, please find the latest version in the Internet. Packing Please use the recycling operators known to you. We can also help you get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. omponents used in life-support devices or systems must be expressly authorized for such purpose! ritical components* may only be used in life-support devices** or systems with the express written approval of OSRAM OS. *) A critical component is a component used in a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or the effectiveness of that device or system. **) Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain human life. If they fail, it is reasonable to assume that the health and the life of the user may be endangered

7 SPL LL9_3 Glossary 1) Junction temperature: Limited due to plastic package, not due to laser chip. 2) Standard operating conditions: > 5 ns pulse width, 1 khz pulse repetition rate, 18.5 charge voltage, 15 gate voltage and 25 ambient temperature. The laser is driven by the MOSFET driver Elantec EL714. 3) Switching speed: Switching speed at gate depends on current and speed, charging the gate capacitance (typ. 3 pf) of the internal transistor. Reduced pulse widths, rise and fall times occur at trigger pulse widths < 5 ns. This also reduces the optical peak power

8 SPL LL9_3 Published by OSRAM Opto Semiconductors GmbH Leibnizstraße 4, D-9355 Regensburg All Rights Reserved