8th International Conference

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1 Connecting Theory and Application of Optoelectronic Devices 8th International Conference 1-5 September 008 Front Page Scope and Topics Committee Venue Program Author Information Paper Submission Journal Issue Invited Talks Short Courses Software Tutorials Software Exhibition Accommodation Registration Contact Mailing List Conference Software Services 8th International Conference on Numerical Simulation of Optoelectronic Devices NUSOD ' September 008 University of Nottingham, United Kingdom s l Slides from past NUSOD conferences.

2 Connecting Theory and Application of Optoelectronic Devices 8th International Conference 1-5 September 008 Conference Software Services Final Conference Program Monday 1 Sept. 08 8:30-10:30 11:10-1:50 15:40-18:00 MS MA MB MP Short Course 801 Wurtzite Materials & Devices Distributed-Feedback Lasers Poster Session & Welcome Reception Front Page Scope and Topics Committee Venue Program Author Information Paper Submission Journal Issue Invited Talks Short Courses Software Tutorials Software Exhibition Accommodation Registration Contact Mailing List Tuesday Sept. 08 Wednesday 3 Sept. 08 Thursday 4 Sept. 08 Friday 5 Sept :30-10:0 10:50-1:50 18:30-0:30 08:30-10:0 10:50-1:50 13:50-15:0 08:30-10:0 10:50-1:50 Registration Desk opens 8:00 TuA TuB TuC TuS WA WB WC WR W S ThA ThB ThPD ThS Novel Devices Photonics & Fiber Optics High-Brightness Lasers Short Course 80 Conference Dinner Photodetectors & Solar Cells Vertical-Cavity Lasers Novel Materials & Devices NEW: Rump Session (slides) Short Course :00-1:30 Crosslight Software Tutorial Nanostructures Quantum-Cascade Lasers & Laser Dynamics Postdeadline Session Short Course 803 Monday, 1 September 008 8:30-10:30 Short Course 801 MS Introduction to Optoelectronic Device Simulation [abstract] Joachim Piprek, NUSOD Institute, USA 10:30-11:00 Coffee Break 11:00-11:10 Opening Remarks 11:10-1:50 Wurtzite Materials and Devices (Chair: Bernd Witzigmann, ETH Zurich, Switzerland) MA1 (Al,In)GaN laser diodes in spectral, spatial, and time domain: near-field measurements and basic simulations; Ulrich T. Schwarz, Regensburg University, Germany [slides] MA Optical properties of strain-compensated hybrid InGaN/InGaN/ZnO quantum well lightemitting diodes; S.-H. Park (1), S.-W. Ryu (1), J.-J. Kim (1), W.-P. Hong (1), H.-M Kim (1), J. Park (), and Y.-T. Lee (3); (1) Catholic University of Daegu, Korea; () Korea Institute of Industrial Technology, Korea; (3) Gwangju Institute of Science and Technology, Korea [slides] MA3 Interplay of screening and band gap renormalization effects in near UV InGaN light emitting diodes; H. Wenzel (1), A. Knauer (1), T. Kolbe () and M. Kneissl (); (1) Ferdinand Braun Institute Berlin, Germany; () Technical University Berlin, Germany [slides] MA4 AlGaN/GaN based electroabsorption modulator operating at fiber-optics telecommunication wavelengths; Asghar Asgari (1,), N. Tahmasebizad (1)

3 (1) University of Tabriz, Iran; () University of Western Australia, Australia [slides] MA5 Ab initio and full-zone k*p computations of the electronic structure of wurtzite BeO; Alberto Marnetto (1), Michele Penna (1), Francesco Bertazzi (1,), Enrico Bellotti () and Michele Goano (1); (1) Politecnico di Torino, Italy; () Boston University, USA [slides] 1:50-13:50 Lunch Break Distributed Feedback Lasers (Chair: Hans Wenzel, FBH Berlin, Germany) MB1 Perspective on Device Modelling and Simulation in an Optoelectronics Fab (invited) Stephen K Jones, Andrew J Ward, David J Bazley, and Ian G Knight; Bookham, UK MB Properties of Laterally-Coupled Distributed Feedback Lasers with Higher Order Gratings; Ronald Millett, Henry Schriemer, Trevor Hall, and Karin Hinzer; University of Ottawa, Canada [slides] MB3 A new Technique for Simulating Semiconductor Laser Resonators; Britta Heubeck and Christoph Pflaum; University of Erlangen-Nuremberg, Germany [slides] MB4 Laterally-corrugated ridge-waveguide distributed feedback lasers for 980 nm; Antti Laakso, Jukka Viheriälä, Mihail Dumitrescu, Juha Tommila, Kimmo Haring, Tomi Leinonen, Sanna Ranta and Markus Pessa; Tampere University of Technology, Finland [slides] MB5 Dynamic Internal Optical Field Patterns for Self-Pulsating Two-Section DFB Lasers; Jer- Shien Chen (1), Hong-Chang Kung (), San-Liang Lee (3), and Hen-Wai Tsao (1); (1) National Taiwan University, Taiwan; () Tung Nan Institute of Technology, Taiwan; (3) National Taiwan University of Science and Technology, Taiwan [slides] 15:40-18:00 Poster Session & Welcome Reception MP Near-field Coupling Between Disk- or Ring-shaped Nano Recording Marks in Phase-change Material; K. P. Chiu (1), K. F. Lai (1), Y. S. Chen (1), D. P. Tsai (1,,3); (1) National Taiwan University, Taiwan; () Ademia Sinica, Taiwan; (3) National Taiwan Normal University, Taiwan MP3 Performance Analysis of Layered and Blended Organic Light-Emitting Diodes; Jongwoon Park (1), Seounghwan Park (), Dongchan Shin (3), and Deahee Park (4); (1) Korea Institute of Industrial Technology, Korea; ()Catholic University of Daegu, Korea; (3) Chosun University, Korea; (4) Wonkwang University, Korea MP4 Current Self-Distribution Effects in Oxide-Confined VCSELs; J. Mulet (1), S. Balle (1), J. Arias (), V. Martin-Heriz, I. Esquivias (3); (1) IMEDA, Spain; () Univ. Miguel Hernandez, Spain; (3) Politechn. Univ. Madrid, Spain MP5 The Design of Continuous Curvature Waveguides; R. N. Sheehan (1,) and F. H. Peters (1,); (1) University College Cork, Ireland; () Tyndall National Institute, Ireland MP6 Numerical Analysis of Gain-Switched Quantum Dot Lasers; G. A. P. Thé; Politecnico di Torino, Italy MP7 Dark current simulation of InP/InGaAs/InP p-i-n photodiode; X. D. Wang, W. D. Hu, X. S. Chen, W. Lu, H. J. Tang, T. Li, and H. M. Gong; Shanghai Institute of Technical Physics, China MP8 All-Optical Five-Functional Logic Generator by Using Semiconductor Optical Amplifiers; Kyoung Sun Choi (1,), Young Min Jhon (1), Seok Lee (1) and Jinwoo Park (); (1) Korea Institute of Science and Technology, Korea; () Korea University, Korea MP11 Diffraction Limited Beam From an Anti-Phase Mode of a Coherent Array Using a Long Period Grating Coupler; Iulian Petrescu-Prahova, Intense HPD, USA MP13 Based Simulation of High Gain and Low breakdown voltage InGaAs/InP Avalanche photodiode; W. Lei and F. M. Guo; Normal University, China MP14 Simulation and design consideration of photoresponse for HgCdTe infrared photodiodes; W. D. Hu, X. S. Chen, Z. J. Quan, Z. F. Li, Q. J. Liao, Z. H. Ye, X. N. Hu, and W. Lu; Shanghai Institute of Technical Physics, China MP16 Influence of lateral growth on the optical properties of GaN epitaxial layers; Zhiyuan Gao, Yue Hao, Jinfeng Zhang, Peixian Li, and Jincheng Zhang; Xidian University, China

4 All-Optical Five-Function Generator in Logic Gate by Using Semiconductor Optical Amplifiers Kyoung Sun Choi 1,, Young Min Jhon 1, Seok Lee 1, and Jinwoo Park 1 Intelligent System Research Division, Korea Institute of Science and Technology, Seoul , Korea Department of Electronics and Computer Engineering, Korea University, Seoul , Korea Tel: Fax: ymjhon@kist.re.kr Abstract All-optical five-functional logic generator is demonstrated by using the cross gain modulation (XGM) characteristics of four semiconductor optical amplifiers (SOAs). All-optical five-functional logic gates operated at 10 Gbps including OR, NOR, AND, NOT and XNOR by using VPI simulation tool. I. INTRODUCTION In future optical signal processing and ultra-high speed telecommunication, digital all-optical logic operation is necessary for optical processing system to avoid cumbersome electro-optic conversion. Therefore, digital all-optical processing techniques such as all-optical binary logic gates are expected to become increasingly important in future optical signal processing and ultra-high speed telecommunication. Semiconductor optical amplifiers (SOAs) have a wide range of functions such as amplification, switching, and wavelength conversion. In addition to these applications, optical logic gates by using cross gain modulation (XGM) characteristic of SOA was obtained [1]. XGM characteristic is simple to implement and has shown impressive operation for ultra-high bit rates. Moreover, this shows high conversion efficiency as well as insensitivity to the polarization of input signals []. Our previous all-optical logic gates were single-function basic logic gates such as AND, OR, XOR, NAND, NOR, and XNOR implemented for 10 Gbps systems [3-5]. However, functions handled by alloptical processing are very limited with single-function alloptical logic gates. Therefore, more complex multi-function logic systems are strongly required. In this work, we demonstrate all-optical five-functional logic generator for simultaneous operation of OR, NOR, AND, NOT and XNOR gates at 10 Gbps by using VPI simulation tool. pump signal passing through a SOA, it causes carrier depletion in SOA. The carrier depletion leads to gain saturation in SOA, which can cause a marked intensity reduction of the incoming probe signal. Therefore, a marked intensity reduction of the probe signal in SOA leads to no pulse existence for output signal. When a pulse does not exist for the pump signal, there is no effect to the gain of the probe signal in SOA. Operation principle of multi-functional alloptical logic OR, NOR, AND, NOT and XNOR gate is shown in Fig. 1. In SOA-1, NOR logic is obtained by using Boolean A + B as a probe beam and clock as a pump beam. OR logic is obtained by using the NOR logic from the SOA-1 as a probe beam and clock as a pump beam in SOA-. In SOA-3, NOT logic is obtained by using signal A or signal B as a probe beam and clock as a pump beam. AND logic is obtained by using the NOT logic (NOT A or NOT B) from SOA-3 as a probe beam and signal B or signal A as a pump beam in SOA-4. As shown in Fig. 1, all-optical XNOR operation can be performed by the combination of NOR logic and AND logic from SOA- and SOA-4. Therefore, five all-optical logic functions, such as OR, NOR, AND, NOT and XNOR can be simultaneously realized in four SOAs. Fig. 1. All-optical five-functional logic gates. II. PRINCIPAL OF OPERATION III. SIMULATION RESULTS Since the carrier density change in SOAs will affect all input signals, a signal at one wavelength can affect the gain of a signal at another wavelength. This nonlinear property is called XGM based on SOA [1]. When a pulse exists for the The experimental setup shown in Fig. is implemented by using the software commercialized VPI. We made 10 Gbps input signal A, signal B and clock to confirm 10 Gbps operation of five-functional all-optical logic gate. Signal A

5 and signal B has patterns of 1100 and 0110 to comparison with truth table. All input signals and output signals of SOAs are isolated by using the isolators. The length of SOA which used to simulation is 600, left and right facet reflectivity are 10-4, respectively and the injection current of SOA is 150 to NOR part(soa-1) and NOT part(soa-3) and 130 to OR part(soa-) and AND part(soa-4). The power of probe signals are about 1.5 dbm and pump signals are about 10 dbm. in logic gates operating at 10 Gbps is successfully demonstrated by using XGM characteristics of four SOAs. Fig. 3. Coded input signals for five-functional logic gates. Fig.. Experimental setup for five-functional logic gates. To realize OR and NOR operation, SOA-1 and SOA- are used. In SOA-1, we used Boolean A + B by using x1 coupler of the signals A and B as a probe signal and clock as a pump signal. Due to the gain saturation effect of SOA, the output signal has logic state of 1 when only (0, 0) of input appears. In SOA-, we used NOR logic from the output signal of SOA-1 as a probe signal and clock as a pump signal. The output of SOA- was obtained OR and NOR logic signals with pattern of 1110 and To realize NOT operation, we used the signal A as a probe signal and clock as a pump signal in SOA-3. And we used NOT logic signals from the SOA-3 XGM effect as a probe signal and signal B as a pump signal in SOA-4 to realize AND operation. Finally, by adding obtained NOR and AND signals with a x1 coupler, we could realize a 10 Gbps all-optical XNOR gate. Figure 3 shows input signals A, B, clock and A + B, which were used to simulate five-functional all-optical logic gates. Related output signals, OR, NOR, AND, NOT and XNOR signals are shown in Fig. 4. IV. CONCLUSIONS By using nonlinear gain characteristics of cross gain modulation (XGM) in semiconductor optical amplifiers (SOAs), we successfully demonstrated all-optical fivefunctional logic gates for simultaneous operation of OR, NOR, AND, NOT and XNOR at 10 Gbps with four SOAs by using VPI simulation software. All-optical five-function generator Fig. 4. Simulation results with coded input signals. References [1] A. Sharaiha, H. W. Li, F. Marchese, and J. Le Bihan, Electronics Letters, Vol. 33 (1997), pp [] K. E. Stubkjaer, IEEE Journal on Selected Topics in Quantum Electronics, Vol. 6 (000), pp [3] S. H. Kim, J. H. Kim, J. W. Choi, Y. T. Byun, Y. M. Jhon, S. Lee, D. H. Woo, and S. H. Kim, Electronics Letters, Vol. 41 (005), pp [4] J. H. Kim, Y. M. Jhon, Y. T. Byun, S. Lee, D.H. Woo, and S. H. Kim, IEEE Photonics Technology Letters, Vol. 14 (00), pp [5] J. H. Kim, B. C. Kim, Y. T. Byun, Y. M. Jhon, S. Lee, D. H. Woo, and S. H. Kim, Japanese Journal of Applied Physics, Vol. 43 (004), pp