Toshiba Intelligent Power Device Silicon Monolithic Power MOS Integrated Circuit TPD1038F

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1 Toshiba Intelligent Power Device Silicon Monolithic Power MOS Integrated Circuit TPD38F Motor, Solenoid, Lamp Drivers High-side Power Switch TPD38F The TPD38F is a monolithic power IC for high-side switches. The IC has a vertical MOS FET output which can be directly driven from a CMOS or TTL logic circuit (e.g., an MPU). The device offers intelligent self-protection and diagnostic functions. Features A monolithic power IC with a structure combining a control block (Bi-CMOS) and a vertical power MOS FET on a single chip. One side of load can be grounded to a high-side switch. SOP8-P-.7A Can directly drive a power load from a microprocessor. Weight:.8g(typ.) Built-in protection against overheating and load short-circuiting. Incorporates a diagnosis function that allows diagnosis output to be read externally at load short-circuiting, opening, or overheating. Up to -(5-VDD)~ -(6-VDD) of counterelectromotive force from an L load can be applied. Low on-resistance : RDS(ON)=mΩ(max) VDD = V Ta = 5 Io = A) 8-pin SOP package for surface mounting that can be packed in tape Pin Assignment Marking GND 8 7 V DD V DD TPD38 F Part No. (or abbreviation code) Lot No. 3 6 V DD A line indicates lead (Pb)-free package or lead (Pb)-free finish. IN 4 5 V DD (TOP VIEW) Due to its MOS structure, this product is sensitive to static electricity. 6--3

2 TPD38F Block Diagram Bandgap regulator V DD charge pump IN driver MOSFET (π-mosⅤ) current detection overheat detection GND Pin Description Pin No. Symbol Function GND Ground pin. 3 4 IN 5,6,7,8 V DD Power pin. Output pin. When the load is short-circuited and current in excess of the detection current (3A min) flows to the output pin, the output automatically turns on or off. Self-diagnosis detection pin.goes low when overheating is detected or when output is short circuit with input on (high). N-channel open drain. Input pin. Input is CMOS compatible, with pull down resistor connected. Even if the input is open, output will not accidentally turn on. 6--3

3 TPD38F Timing Chart Input signal Overcurrent detection Hysteresis 5 (typ.) Channel temperature T ch Overheating detection 5 (min) Load open Output current Output signal Diagnostic output Thermal shutdown Load open detection Current limit Normal Truth Table Input signal Diagnosis output Output signal Output state Operating state H H H on L L L off H L L current limit (switching) L L L off H L L off L L L off H H H on L H H off H L L off L H H off Normal Load short Overheating Load open Overheating and load open

4 TPD38F Absolute Maximum Ratings (Ta = 5 C) Characteristics Symbol Rating Unit Drain-source voltage V DS 6 V Supply voltage Input voltage DC V DD() 5 V Pulse V DD() 6(R S =Ω,τ=5ms) V DC () -.5~ V Pulse () V DD() +.5(t=ms) V Diagnosis output voltage -.5~5 V Output current Internally limited A Input current I IN ± ma Diagnosis current I 5 ma Power dissipation (Note -a) Power dissipation (Note -b) P D(). W P D().45 W Operating temperature Topr -4~ C Channel temperature T ch 5 C Storage temperature T stg -55~5 C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ( Handling Precautions /Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Resistance Characteristic Symbol Rating Unit Thermal resistance R th(ch-a) 3.5 (Note-a) 94. (Note-b) C /W Note : -a : Mounted on glass epoxy board (a) -b : Mounted on glass epoxy board (b) FR (Unit:mm) FR (Unit:mm)

5 TPD38F Electrical Characteristics (T a =5 C) Characteristics Symbol Test circuit Test condition min typ. max Unit Operating supply voltage V DD(OPR) V Current dissipation I DD -, =V, R L =Ω ma H-level input voltage V IH V L-level input voltage V IL V H-level input current I IH -, = - - μa On resistance R DS(ON) -, =A - -. Ω Output leakage current L ma Diagnosis V L -level V DL - DD =V, =V, I DL =ma output voltage R L =Ω V Diagnosis V H -level I DH - DD =V, =, R L =Ω, output current V DH =V - - μa C() (Note) 3-9 A Over current detection C() (Note3) 3, R L =.Ω - - A Overheating detection T OT Load open detection (Note4) R op -, =V kω Switching time t on - - μs 4, R L =Ω t off μs Diagnosis delay time t DLH μs 5, R L =Ω t DHL - - μs Output clamp voltage V clamp -, =V, =A, L=mH -(6- -(5- - V DD ) V DD ) V (Note ) Over-current detection (Note 3) Peak current limit function (Note 4) Load open detection function : V DD = 8 ~ 8V Test Circuit Over current detection C() :Over current detection when load current is increased while VIN = "H".5kΩ TPD38F C() R L V <.4V V DL

6 Test Circuit Over current detection C() :Over current detection when load is short circuit and VIN = "L" "H" TPD38F.5kΩ TPD38F C() P.G R L V <.4V V DL Test Circuit 3 Over current detection C().5kΩ TPD38F C() P.G R L =.Ω Test Circuit 4 Switching time t on, t off P.G TPD38F V R L =Ω V.μs.μs 9% 9% % % V 9% % t on t off Test Circuit 5 Diagnosis delay time t DLH, t DHL 5kΩ TPD38F.μs 9% %.μs 9% % P.G R L =Ω V 5% 5% t DLH t DHL

7 TPD38F CURRENT CURRENT DISSIPATION IDD IDD (ma) I DD I DD - V DD V DD.5 LOAD OPEN, =.5 RL=Ω,VIN=V LOAD OPEN,V.5 IN =V SUPPLY VOLTAGE V DD (V) ON VOLTAGE VDS(ON) VDS(ON) (V) V V DS(ON) PUT CURRENT (A) ON ON RESISTANCE RESISTANCE RDS(ON) (Ω) (Ω) R DS(ON) R DS(ON) - T ch T ch =A ON RESISTANCE RDS(ON) (Ω) (Ω) R R DS(ON) - V DD V DD =A SUPPLY VOLTAGE V DD (V) H-LEVEL INPUT VOLTAGE VIH (V) (V) V IH V IH - V DD V DD L-LEVEL INPUT VOLTAGE VIL (V) V IL V- IL V DD V DD SUPPLY VOLTAGE V DD DD (V) SUPPLY VOLTAGE V DD (V)

8 TPD38F OVER OVER CURRENT DETECTION PROTECTION IOC (A) (A) C() C() C C - T ch T ch NOSIS PUT VOLTAGE VDL (mv) V DL V DL - T ch T ch I DL =ma I DL =ma VDD=V PUT CLAMP VOLTAGE Vclamp (V) V clamp V clamp - T ch T ch VIN=V =A L=mH SWITCHING TIME (µs) SWITCHING CHARACTERISTICS R L =Ω t ON t OFF OPERATING CHANNEL TEMPERATURE T ch ch ( C) ( C) SUPPLY VOLTAGE V DD (V) NOSIS DELAY TIME tdlh (µs) t DLH t DLH -T ch T ch RL=Ω 6 V DD =6V V DD =8V NOSIS DELAY TIME tdhl (µs) t DHL t DHL - T ch T ch 4 R L =Ω 3 VDD=8V V DD =6V

9 TPD38F NOSIS DELAY DELAY TIME TIME (µs) tdlh,tdhl (µs) t DLH -,t DHL V DD V DD t DLH t DHL RL=Ω SUPPLY VOLTAGE V DD V DD (V) (V) LOAD LOAD OPEN DETECTION ROP (kω) (k op オR ープン検出抵 RR OP OP - VV DD DD R OPH :LOAD OPEN DETECTION RESITANCE 8 R OPL :LOAD OPEN DETECTION RESET RESISTANCE 6 R OPH 4 R OPL SUPPLY 電源電圧 VOLTAGE V V DD DD (V) (V) LOAD LOAD OPEN OPEN DETECTION ROP (kω) (kω) R OP R OP - T ch T ch 5 4 ROPH:LOAD OPEN DETECTION RESITANCE R 3 OPL :LOAD OPEN DETECTION RESET RESISTANCE R OPH R OPL POWER DISSIPATION PD PD (W) (W) () () P D P- D T a Ta ()MOUNTED ON GLASS EPOXY BOARD (a) ()MOUNTED ON GLASS EPOXY BOARD(b) AMBIENT TEMPERATURE Ta ( C) r th(ch-a) - t W TRANSIENT THERMAL RESISTANCE rth(ch-a) ( C/W) ()MOUNTED ON GLASS EPOXY BOARD(a) ()MOUNTED ON GLASS EPOXY BOARD(b) SINGLE PULSE,Ta=5 () ().... PULSE WIDTH t w (s)

10 TPD38F Package Dimensions Weight:.8g (typ.) 6--3

11 TPD38F RESTRICTIONS ON PRODUCT USE 369EBA The information contained herein is subject to change without notice. The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the Handling Guide for Semiconductor Devices, or TOSHIBA Semiconductor Reliability Handbook etc.. The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ( Unintended Usage ). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer s own risk. The products described in this document are subject to the foreign exchange and foreign trade laws. 6--3

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