Customised Pack Sizes / Qtys. Support for all industry recognised supply formats: o o o. Waffle Pack Gel Pak Tape & Reel

Transcription

1 Design Assistance Assembly Assistance Die handling cnsultancy Hi-Rel die qualificatin Ht & Cld die prbing Electrical test & trimming Custmised Pack Sizes / Qtys Supprt fr all industry recgnised supply frmats: Waffle Pack Gel Pak Tape & Reel Onsite strage, stckhlding & scheduling 100% Visual Inspectin MIL-STD 883 Cnditin A MIL-STD 883 Cnditin A On-site failure analysis Bespke 24 Hur mnitred strage systems fr secure lng term prduct supprt On-site failure analysis Cntact baredie@micrss.cm Fr price, delivery and t place rders HMC-VDD

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4 1 Typical Applicatins This is ideal fr: Pint-t-Pint Radis Pint-t-Multi-Pint Radis Military Radis, Radar & ECM Test Equipment & Sensrs Space Functinal Diagram Features Lw Insertin Lss: 1.5 db Wide Dynamic Range: 18 db High Input IP3: +17 dbm Analg Cntrl Vltage: -4 t +4V Die Size: 1.01 x x 0.1 mm General Descriptin The is a mnlithic GaAs PIN dide based Vltage Variable Attenuatr (VVA) which exhibits lw insertin lss, high IP3 and wide dynamic range. All bnd pads and the die backside are Ti/ Au metallized and the PIN dide devices are fully passivated fr reliable peratin. This wideband MMIC VVA is cmpatible with cnventinal die attach methds, as well as thermcmpressin and thermsnic wirebnding, making it ideal fr MCM and hybrid micrcircuit applicatins. All data shwn herein is measured with the chip in a 50 Ohm envirnment and cntacted with RF prbes Electrical Specificatins*, T A = +25 C, 50 Ohm System Parameter Min. Typ. Max. Units Frequency Range GHz Insertin Lss db Attenuatin Range 18 db Return Lss (Min. Attenuatin) 12 db Return Lss (Max. Attenuatin) 15 db Input IP3 17 dbm Pin = 0 dbm / Tne 30 dbc *Unless therwise indicated, all measurements are frm prbed die 1-28

5 Minimum Attenuatin vs. Frequency 0 Maximum Attenuatin vs. Frequency LOSS (db) Input & Output Return Lss vs. Minimum Attenuatin RETURN LOSS (db) INPUT (db) OUTPUT (db) LOSS (db) Input & Output Return Lss vs. Maximum Attenuatin RETURN LOSS (db) INPUT (db) OUTPUT (db) IM3 vs. Vdd2 (Vdd1= 17.5 GHz (0 dbm Tnes) 70 IM3 vs. Frequency (0 dbm Tnes) IM3 (dbc) IM3 (dbc) Vdd1 = 4V Vdd2 = 0.5V (Best Case) Vdd1 = 4V Vdd2 = 0.5V (Wrst Case) VD2 (V) Nte: Measured Perfrmance Characteristics (Typical Perfrmance at 25 C) Tw-Tne 0 dbm / tne 1-29

6 1 Abslute Maximum Ratings Outline Drawing Cntrl Vltage Range (Vdd) -6 t +6 Vdc Strage Temperature -65 t +150 C Operating Temperature -55 t +85 C Ttal Bias Current (Idd) 20 ma ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS NOTES: 1. ALL DIMENSIONS ARE IN INCHES [MM]. 2. TYPICAL BOND PAD IS.004 SQUARE. 3. BACKSIDE METALLIZATION: GOLD. 4. BACKSIDE METAL IS GROUND. 5. BOND PAD METALLIZATION: GOLD. 6. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS. 7. OVERALL DIE SIZE ±.002 Die Packaging Infrmatin [1] Standard Alternate GP-2 (Gel Pack) [2] [1] Refer t the Packaging Infrmatin sectin fr die packaging dimensins. [2] Fr alternate packaging infrmatin cntact Hittite Micrwave Crpratin. 1-30

7 Pad Descriptins Pad Number Functin Descriptin Interface Schematic 1 RFIN This pad is DC blcked and matched t 50 Ohms. 2, 3 Vdd1, Vdd2 Cntrl Input 4 RFOUT This pad is DC blcked and matched t 50 Ohms. Die Bttm GND Die bttm must be cnnected t RF/DC grund

8 1 Assembly Diagram Nte 1: Bypass caps shuld be 100 pf (apprximately) ceramic (single-layer) placed n farther than 30 mils frm the attenuatr. Nte 2: Best perfrmance btained frm use f <10 mil (lng) by 3 by 0.5mil ribbns n input and utput. 1-32

9 Munting & Bnding Techniques fr Millimeterwave GaAs MMICs The die shuld be attached directly t the grund plane eutectically r with cnductive epxy (see HMC general Handling, Munting, Bnding Nte). 50 Ohm Micrstrip transmissin lines n 0.127mm (5 mil) thick alumina thin fi lm substrates are recmmended fr bringing RF t and frm the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin fi lm substrates must be used, the die shuld be raised 0.150mm (6 mils) s that the surface f the die is cplanar with the surface f the substrate. One way t accmplish this is t attach the 0.102mm (4 mil) thick die t a 0.150mm (6 mil) thick mlybdenum heat spreader (mly-tab) which is then attached t the grund plane (Figure 2). Micrstrip substrates shuld be placed as clse t the die as pssible in rder t minimize bnd wire length. Typical die-t-substrate spacing is 0.076mm t mm (3 t 6 mils). Handling Precautins Fllw these precautins t avid permanent damage. Strage: All bare die are placed in either Waffle r Gel based ESD prtective cntainers, and then sealed in an ESD prtective bag fr shipment. Once the sealed ESD prtective bag has been pened, all die shuld be stred in a dry nitrgen envirnment. Cleanliness: Handle the chips in a clean envirnment. DO NOT attempt t clean the chip using liquid cleaning systems. Static Sensitivity: Fllw ESD precautins t prtect against ESD strikes. Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables t minimize inductive pick-up mm (0.004 ) Thick GaAs MMIC 0.076mm (0.003 ) RF Grund Plane Wire Bnd 0.127mm (0.005 ) Thick Alumina Thin Film Substrate Figure mm (0.004 ) Thick GaAs MMIC 0.076mm (0.003 ) 0.150mm (0.005 ) Thick Mly Tab RF Grund Plane Wire Bnd 0.254mm (0.010 ) Thick Alumina Thin Film Substrate Figure 2. General Handling: Handle the chip alng the edges with a vacuum cllet r with a sharp pair f bent tweezers. The surface f the chip has fragile air bridges and shuld nt be tuched with vacuum cllet, tweezers, r fi ngers. Munting The chip is back-metallized and can be die munted with AuSn eutectic prefrms r with electrically cnductive epxy. The munting surface shuld be clean and fl at. Eutectic Die Attach: A 80/20 gld tin prefrm is recmmended with a wrk surface temperature f 255 C and a tl temperature f 265 C. When ht 90/10 nitrgen/hydrgen gas is applied, tl tip temperature shuld be 290 C. DO NOT expse the chip t a temperature greater than 320 C fr mre than 20 secnds. N mre than 3 secnds f scrubbing shuld be required fr attachment. Epxy Die Attach: Apply a minimum amunt f epxy t the munting surface s that a thin epxy fi llet is bserved arund the perimeter f the chip nce it is placed int psitin. Cure epxy per the manufacturer s schedule. Wire Bnding RF bnds made with x ribbn are recmmended. These bnds shuld be thermsnically bnded with a frce f grams. DC bnds f (0.025 mm) diameter, thermsnically bnded, are recmmended. Ball bnds shuld be made with a frce f grams and wedge bnds at grams. All bnds shuld be made with a nminal stage temperature f 150 C. A minimum amunt f ultrasnic energy shuld be applied t achieve reliable bnds. All bnds shuld be as shrt as pssible, less than 12 mils (0.31 mm)