TO9. Features. Applications. High output power High dynamic power range High efficiency Standard low cost package
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![3.. xx 3 oltae [] wer [] SemiNex delivers the hihest available power at infrared wavelenths](/docs-images/82/86740211/images/1-2.jpg "between 3xx and xx nm.")
1 TO ih wer Multimode and Sinlemode Lasers Up to. atts C,,, 63, 6 nm standard Custom avelenths vailable Features ih output power ih dynamic power rane ih efficiency Standard low cost packae pplications Medical laser equipment LIDR Free space optical communication DPSS pump lasers Military / erospace xx & XX um TO LI 3 xx 3.. xx 3 oltae [] wer [] SemiNex delivers the hihest available power at infrared wavelenths between 3xx and xx nm. hen necessary we will further optimize the desin of our InP laser chips to meet our customers specific optical and electrical performance needs. Diodes, bars and packaes are tested to meet customer and market performance demands. Typical results and packain options are shown. Contact SemiNex for additional details or to discuss your specific requirements.. oltae. 6 Current [] SemiNex Corporation Corporate Place Peabody, M info@seminex.com Rev.
2 TO Uncapped avelenth Output wer (Min.) Emitter idth Emitter eiht Spectral idth Fast xis Div. (Max.) Slow xis Div. (Max.) wer Conversion Eff. Operatin Current Operatin oltae (Max.) eiht Symbol TO- TO- TO- TO- TO nm (±) / op to to to to to Specified values are rated at a constant heat sink temperature of Unless otherwise indicated all values are nominal. SemiNex Corporation Corporate Place Peabody, M info@seminex.com Rev.
3 TO Capped avelenth Output wer (C) Emitter idth Emitter eiht Spectral idth Fast xis Div. Slow xis Div. wer Conversion Eff. Operatin Current Operatin olt. eiht Symbol TO- TO- TO- TO-6 TO- TO-33- TO-6- TO-- TO-- TO nm (±) / op to. to. to. to. to. to.... to to to to Specified values are rated at a constant heat sink temperature of Specified values are rated at constant heat sink temperature of SemiNex Corporation Corporate Place Peabody, M info@seminex.com Rev.
4 TO Sinle Mode avelenth Output power (C) Chip Cavity Lenth Emitter idth Emitter eiht Spectral idth Slope Effi. Fast xis Div. Slow xis Div. wer Conversion Eff. Operatin Current Operatin oltae eiht Symbol TO- TO- TO- TO-* TO- TO-* TO- CL nm (+/- ) m / op to * Uncapped Specified values are rated at a constant heat sink temperature of SemiNex Corporation Corporate Place Peabody, M info@seminex.com Rev.
5 TO Lensed avelenth Output wer (C) Emitter idth Emitter eiht Spectral idth Fast xis Div. Slow xis Div. wer Conversion Eff. Operatin Current Operatin olt. eiht Cap Lens Symbol TO--6 TO-6- TO-6-6 TO-- TO--6 TO--6 TO--.. * * nm (±) / mrad mrad op to F=S. to. to.... to to to to Collimated Fast xis Specified values are rated at a constant heat sink temperature of *Fast and Slow axis matched - are ll statements, technical information and recommendations related to the product herein are based upon information believed to be reliable or ac c ur at e. T he ac c ur ac y or c omplet enes s her ein is not uar ant eed, and no r es pons ibility is as s umed f or any inaccuracies. The user assumes all risks and liability whatsoever in connection with the use of a product or its application. SemiNex Corporation reserves the riht to chane at any time without notice the desin, specification, deduction, fit or form of its described herein, includin withdrawal at any time of a product offered for sale herein. Users are encouraed to visit for the latest data. SemiNex Corporation makes no representations that the products herein are free from any intellectual property claims of others. Please contact SemiNex for more information. SemiNex Corporation DNGER ISIB LE / INISIBLE LSER R DITIO N O ID D IR ECT EXPO SUR E TO B EM CLSS II Ib a nd I LSE R PRODUCTS This product complies wit h CFR as applic able. Laser aperture is on the test s tation. Las er radiation f rom t his produc t i s c ons idered an acute hazard to t he s kin and eyes. SemiNex Corporation Corporate Place Peabody, M info@seminex.com Rev.
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Silicon PIN Photodiode, RoHS Compliant TEMD1000 DESCRIPTION TEMD1030 TEMD1020 TEMD1040 18029 TEMD1000 series are PIN photodiodes with high speed and high radiant sensitivity in black, surface mount plastic
BPV22NF(L) Silicon PIN Photodiode. Vishay Semiconductors
Silicon PIN Photodiode Description BPV22NF(L) is a high speed and high sensitive PIN photodiode in a plastic package with a spherical side view lens. The epoxy package itself is an IR filter, spectrally