1-2 List of equipment used T - 6
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2 DEX 1. Evaluation Method PAGE 1 1 Circuit used for determination T 1 (1) Steady state data (2) Warm up voltage drift characteristics (3) Over current protection (O.C.P.) characteristics (4) Over voltage protection (O.V.P.) characteristics (5) Output rise characteristics (6) Output fall characteristics (7) Output rise characteristics with ON / OFF control (negative logic) (8) Output fall characteristics with ON / OFF control (negative logic) (9) Dynamic load response characteristics (10) Inrush current waveform (11) Outputripple, noise waveform (12) Leakage current characteristics (13) Dynamic line response characteristics (14) AC input response (15) Input reflected current 1 2 List of equipment used T 6 2. Characteristics 2 1 Steady state data T 7 (1) Regulation line and load, temp. drift (2) Output voltage and ripple voltage v.s. input voltage (3) Efficiency and input current v.s.output current (4) Efficiency v.s. input voltage 2 2 Warm up voltage drift characteristics T Over current protection (O.C.P.) characteristics T Over voltage protection (O.V.P.) characteristics T Output rise characteristics T Output fall characteristics T Output rise characteristics with ON / OFF control (negative logic) T Output fall characteristics with ON / OFF control (negative logic) T Dynamic load response characteristics T Inrush current waveform T Outputripple, noise waveform T Leakage current characteristics T Dynamic line response characteristics T AC input response T Input reflected current T 31 Terminology used Vin Input Voltage Iout Output Current Output Voltage Tp BasePlate Temperature Iin Input Current Tr Load RiseTime Tf Load FallTime
3 1. EVALUATION METHOD 1 1 Circuit used for determination (1) Steady state data 36 ~ 76VDC A C1 V P.S. V C2 CASE C3 C4 A VR Controlled temp. chamber (i) Tp = 20 C ~ 100 C C1 : 33µF Electrolytic Capacitor C2 : 4700pF Ceramic Capacitor C3 : 1µF Ceramic Capacitor C4 : 12V&15V 1000µF Electrolytic Capacitor 24V&28V 470µF Electrolytic Capacitor (ii) Tp = 40 C ~ 100 C C1 : 33µF Ceramic Capacitor or equivalent capacitor such as 100V 6.8µF x 5 pcs C4 : 2 pieces of the above recommended value (2) Warm up voltage drift characteristics 48VDC C1 C2 V P.S. CASE V C3 A C4 R Controlled temp. chamber C1 : 33µF Electrolytic Capacitor C2 : 4700pF Ceramic Capacitor C3 : 1µF Ceramic Capacitor C4 : 12V&15V 1000µF Electrolytic Capacitor 24V&28V 470µF Electrolytic Capacitor (3) Over current protection (O.C.P.) characteristics Same as steady state data T1
4 (4) Over voltage protection (O.V.P.) characteristics 48VDC A C1 V P.S. C3 C4 V C2 CASE C1 : 33µF Electrolytic Capacitor C2 : 4700pF Ceramic Capacitor C3 : 1uF Ceramic Capacitor C4 : 12V&15V 1000µF Electrolytic Capacitor 24V&28V 470µF Electrolytic Capacitor (5) Output rise characteristics SW 48VDC A C1 V P.S. V C2 CASE C3 A C4 VR C1 : 33µF Electrolytic Capacitor C2 : 4700pF Ceramic Capacitor C3 : 1µF Ceramic Capacitor C4 : 12V&15V 1000µF Electrolytic Capacitor 24V&28V 470µF Electrolytic Capacitor (6) Output fall characteristics Same as Output rise characteristics (7) Output rise characteristics with on/off control 48VDC A C1 CNT V S P.S. V CASE C2 C3 A C4 VR C1 : 33µF Electrolytic Capacitor C2 : 4700pF Ceramic Capacitor C3 : 1µF Ceramic Capacitor C4 : 12V&15V 1000µF Electrolytic Capacitor 24V&28V 470µF Electrolytic Capacitor T2
5 (8) Output fall characteristics with on/off control Same as Output rise characteristics with on/off control (9) Dynamic load response characteristics Current probe 48VDC C1 C2 V P.S. CASE C4 C3 V A load 1 load 2 Dynamic dummy load C1 : 33µF Electrolytic Capacitor C2 : 4700pF Ceramic Capacitor C3 : 1µF Ceramic Capacitor C4 : 12V&15V 1000µF Electrolytic Capacitor 24V&28V 470µF Electrolytic Capacitor (10) Inrush current waveform 48VDC V C1 Shunt resistor SW C2 P.S. CASE V C3 C4 A R C1 : 33µF Electrolytic Capacitor C2 : 4700pF Ceramic Capacitor C3 : 1µF Ceramic Capacitor C4 : 12V&15V 1000µF Electrolytic Capacitor 24V&28V 470µF Electrolytic Capacitor (11) Outputripple, noise waveform NORMAL MODE (EIAJ Standard RC9002A) 48VDC C1 C2 P.S. CASE VR 50mm C3 C4 1.5m 50Ω Cable Rƒ Cƒ C1 : 33µF Electrolytic Capacitor C2 : 4700pF Ceramic Capacitor C3 : 1µF Ceramic Capacitor Rƒ : 50Ω Cƒ : 4700pF C4 : 12V&15V 1000µF Electrolytic Capacitor 24V&28V 470µF Electrolytic Capacitor T3
6 (11) Outputripple, noise waveform NORMAL COMMON MODE 48VDC C1 C2 C1 : 33µF Electrolytic Capacitor C2 : 4700pF Ceramic Capacitor C3 : 1µF Ceramic Capacitor P.S. CASE VR 100mm 50mm C3 C4 1.5m 50Ω Cable C4 : 12V&15V 1000µF Electrolytic Capacitor 24V&28V 470µF Electrolytic Capacitor (12) Leakage current characteristics Vin A C1 C2 V P.S. CASE V C3 A C4 VR Leakage Current meter C1 : 33µF Electrolytic Capacitor C2 : 4700pF Ceramic Capacitor C3 : 1µF Ceramic Capacitor C4 : 12V&15V 1000µF Electrolytic Capacitor 24V&28V 470µF Electrolytic Capacitor (13) Dynamic line characteristics 43VDC 53 VDC Vin A C1 V P.S. V C2 CASE C3 A VR C4 C1 : 33µF Electrolytic Capacitor C2 : 4700pF Ceramic Capacitor C3 : 1µF Ceramic Capacitor C4 : 12V&15V 1000µF Electrolytic Capacitor 24V&28V 470µF Electrolytic Capacitor T4
7 (14) AC input response characteristics 48VDC C5 C1 OSC C2 V P.S. CASE V C3 A VR C4 C1 : 33µF Electrolytic Capacitor C2 : 4700pF Ceramic Capacitor C3 : 1µF Ceramic Capacitor C5 : 560µF Electrolytics Capacitor C4 : 12V&15V 1000µF Electrolytic Capacitor 24V&28V 470µF Electrolytic Capacitor (15) Input Reflected current characteristics Vin C5 12µH OSC C1 C2 A V P.S. CASE V C3 C4 R C1 : 33µF Electrolytic Capacitor C2 : 4700pF Ceramic Capacitor C3 : 1µF Ceramic Capacitor C5 : 220µF Elerctrolytic Capacitor C4 : 12V&15V 1000µF Electrolytic Capacitor 24V&28V 470µF Electrolytic Capacitor T5
8 12 List of equipment used PAH200S48 * No Description Manufacturer Model No. 1 Oscilloscope TEKTRONIX 2465B 2 HITACHI V1050F 3 Digital oscilloscope YEW DL HITACHI VC Digital volt meter IWATSU VDAC DC ampere meter YOKOGAWA ELEC Dynamic dummy load TAKAMIZAWA PSA150D 8 Variable resistive load MATSUNAGA 44/11Ω 9 Variable resistive load MATSUNAGA 2.4/0.6Ω 10 Controlled temp. chamber TABAI PL2GM 11 Shunt resistor KUWANO 100mV, 1A 12 Current probe amplifier TEKTRONIX TM Current probe TEKTRONIX A AC power source / Analyzer HEWLETT PACKARD 6813A 15 Leakage current tester SIMPSON 2292 T6
9 2. CHARACTERISTICS 21 Steady State Data (1) Regulation Line and Load, Temperature Drift Regulation Line and Load Iout Vin 36 VDC 48 VDC 76 VDC Line Regulation (mv) 0% % 50% % 100% % Load Regulation (mv) % 0.033% 0.025% Temperature Drift Vin = 48VDC Iout = 100% Tp 40 C 25 C 100 C Temp. Stability V V V % 24 V Regulation Line and Load Iout Vin 36 VDC 48 VDC 76 VDC Line Regulation (mv) 0% % 50% % 100% % Load Regulation (mv) 0.096% 0.029% 0.062% Temperature Drift Vin = 48VDC Iout = 100% Tp 40 C 25 C 100 C Temp. Stability V V V V 0.41% T7
10 2. CHARACTERISTICS 21 Steady State Data (2) Output Voltage And Ripple Voltage V.S. Input Voltage Condition : Iout = 100% Tp = 40 C Tp = 100 C Output Voltage (V) Output Voltage Ripple Voltage (mv) Ripple Voltage Input Voltage (VDC) 0 24 V Output Voltage (V) Output Voltage Ripple Voltage (mv) 5 Ripple Voltage Input Voltage (VDC) 0 T8
11 2. CHARACTERISTICS 21 Steady State Data (3) Efficiency And Input Current V.S. Output Current Condition : Vin = 36 VDC = 48VDC = 76VDC Input Current (A) Efficiency Input Current Efficiency (%) Output Current (%) 0 24 V Input Current (A) Efficiency Input Current Efficiency (%) Output Current (%) 0 T9
12 2. CHARACTERISTICS 21 Steady State Data (4) Efficiency v.s. Input Voltage Condition : Iout = 100% Efficiency (%) Input Voltage (VDC) 24 V Efficiency (%) Input Voltage (VDC) T10
13 22 Warm Up Voltage Drift Characteristics Condition : Vin = 48 V DC Iout = 100 % Output Voltage Drift(%) Time(H) 24 V Output Voltage Drift(%) Time(H) T11
14 23 O.C.P. Charateristics Condition : Vin = 36 VDC Vin = 48 VDC Vin = 76 VDC 24V NEMICLAMBDA (s) PTE LTD T12
15 O.C.P. Charateristics Condition : Tp = 40 C Tp = 100 C Vin = 48 VDC 12V 24V T13
16 24 O.V.P. Characteristics Condition : Vin = 48 V DC Iout = 0 % OVP Trip Point 5V/DIV 100ms/DIV 24 V OVP Trip Point 10V/DIV 200ms/DIV T14
17 25 Output Rise Characteristics Condition : Vin = 48 V DC Iout = 0 % Vin 5V / DIV 50V / DIV 50ms / DIV 24 V Vin 10V / DIV 50V / DIV 50ms / DIV T15
18 Output Rise Characteristics Condition : Vin = 48 V DC Iout = 100 % Vin 5V / DIV 50V / DIV 50ms / DIV 24 V Vin 10V / DIV 50V / DIV 50ms / DIV T16
19 26 Output Fall Characteristics Condition : Vin = 48 V DC Iout = 0 % Vin 5V / DIV 50V / DIV 500ms / DIV 24 V Vin 10V / DIV 50V / DIV 1s / DIV T17
20 Output Fall Characteristics Condition : Vin = 48 V DC Iout = 100 % Vin 5V / DIV 50V / DIV 200ms / DIV 24 V Vin 10V / DIV 50V / DIV 200ms / DIV T18
21 27 Output Rise With On/Off Characteristics (Negative logic) Condition : Vin = 48 V DC Iout = 0 % On/Off Control 5V / DIV 5V / DIV 50ms / DIV 24 V On/Off Control 10V / DIV 5V / DIV 50ms / DIV T19
22 Output Rise With On/Off Characteristics (Negative logic) Condition : Vin = 48 V DC Iout = 100 % On/Off Control 5V / DIV 5V / DIV 50ms / DIV 24 V On/Off Control 10V / DIV 5V / DIV 50ms / DIV T20
23 28 Output Fall With On/Off Characteristics (Negative logic) Condition : Vin = 48 V DC Iout = 0 % On/Off Control 5V / DIV 5V / DIV 500ms / DIV 24 V On/Off Control 10V / DIV 5V / DIV 500ms / DIV T21
24 Output Fall With On/Off Characteristics (Negative logic) Condition : Vin = 48 V DC Iout = 100 % On/Off Control 5V / DIV 5V / DIV 500ms / DIV 24 V On/Off Control 10V / DIV 5V / DIV 500ms / DIV T22
25 29 Dynamic Load Response Characteristics Condition : Vin = 48 VDC Iout 2ms / DIV Iout ( 10A / DIV ) f = 100Hz ( 0.5V / DIV ) 50% Tr = 75us Tf = 75us 100% 2.1 %, 2.5 %. Iout 200us / DIV Iout ( 10A / DIV ) f = 1kHz ( 0.5V / DIV ) 50% Tr = 75us Tf = 75us 100% 2.1%, 2.5% T23
26 Dynamic Load Response Characteristics Condition : Vin = 48 VDC 24 V Iout 2ms / DIV Iout ( 5A / DIV ) f = 100Hz ( 0.5V / DIV ) 50% Tr = 75us Tf = 75us 100% 1.46 %, 1.60 % Iout 200us / DIV Iout ( 5A / DIV ) f = 1kHz ( 0.5V / DIV ) 50% Tr = 75us Tf = 75us 100% 1.45%, 1.66% T24
27 210 Inrush Current Waveform Condition : Vin = 48 V DC Iout = 100 % Iin Vin 20A / DIV 50V / DIV 50us / DIV Nemic Lambda (S) Pte Ltd T25
28 211 Output Ripple & Noise Waveform Condition : Vin = 48V DC Iout = 100% NORMAL MODE 50mV / div 50 mv (Vpp) 1µs / div NORMAL COMMON MODE 50mV / div 105 mv (Vpp) 1µs / div T26
29 Output Ripple & Noise Waveform 24 V Condition : Vin = 48V DC Iout = 100% NORMAL MODE 50mV / div 88 mv (Vpp) 1µs / div NORMAL COMMON MODE 100mV / div 154 mv (Vpp) 1µs / div T27
30 212 Leakage Current Characteristics Condition : Iout = 100% Tp= 25 C 12V 0.20 Leakage Current (ma) V FG V FG Input Voltage (V) 24V Leakage Current (ma) Input Voltage (V) V FG V FG T28
31 213 Dynamic Line Response Characteristics Condition :Vin = 43 <=> 53VDC Iout = 100% Tp= 25 C Vin 0.5V / DIV 20V / DIV 2mS / DIV 24 V Vin 0.5V / DIV 20V / DIV 2mS / DIV T29
32 214 AC Input Response Condition : Vin = 48 VDC Iout = 100% Tp= 25 C 12V Input Waveform Output Waveform AC Input Ripple Voltage = 4V Output Ripple Voltage = 22.8 mv 24V Input Waveform Output Waveform AC Input Ripple Voltage = 4V Output Ripple Voltage = 44.4 mv T30
33 215 PUT REFLECTED CURRENT Condition : Vin = 48 VDC Iout = 100% Tp= 25 C 10mA / DIV 1us / DIV 10mA / DIV 50us / DIV T31
34 215 PUT REFLECTED CURRENT Condition : Vin = 48 VDC Iout = 100% Tp= 25 C 24 V 10mA / DIV 1us / DIV 10mA / DIV 50us / DIV T32
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