N-channel TrenchMOS logic level FET

Transcription

1 SOT3 Rev. 8 October Product data sheet. Product profile. General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications.. Features and benefits Low conduction losses due to low on-state resistance Logic level compatible.3 Applications DC-to-DC converters General purpose switching High-speed line drivers. Quick reference data Table. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V DS drain-source voltage T j 5 C; T j 5 C - - V I D drain current T sp =5 C; V GS = 5 V; see Figure ; A see Figure V GS gate-source voltage -6-6 V Static characteristics R DSon drain-source on-state resistance V GS =5V; I D =.75 A; T j =5 C; see Figure ; see Figure - 5 mω. Pinning information Table. Pinning information Pin Symbol Description Simplified outline Graphic symbol G gate D drain 3 S source D drain G 3 SOT3 (SC-73) mbb76 D S

2 3. Ordering information Table 3. Type number. Marking Ordering information Package Name Description Version SC-73 plastic surface-mounted package with increased heatsink; leads SOT3 Table. Marking codes Type number Marking code NQL 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 63). Symbol Parameter Conditions Min Max Unit V DS drain-source voltage T j 5 C; T j 5 C - V V DGR drain-gate voltage T j 5 C; T j 5 C; R GS =kω - V V GS gate-source voltage -6 6 V I D drain current T sp = C; V GS =5V -. A T sp =5 C; V GS = 5 V; see Figure ; A see Figure I DM peak drain current T sp = 5 C; pulsed; t p µs; - A see Figure P tot total power dissipation T sp =5 C; see Figure W T stg storage temperature C T j junction temperature C Source-drain diode I S source current T sp =5 C A I SM peak source current T sp = 5 C; pulsed; t p µs - A Avalanche ruggedness E DS(AL)S non-repetitive drain-source avalanche energy V GS =5V; T j =5 C; I D =3.5A; R GS =5Ω; V sup 5 V; unclamped; t p =.ms; see Figure - 5 mj I AS non-repetitive avalanche current V sup 5 V; V GS =5V; T j(init) =5 C; R GS =5Ω; unclamped; see Figure A All information provided in this document is subject to legal disclaimers. NXP B.V.. All rights reserved. Product data sheet Rev. 8 October of 3

3 3ac8 3aa5 I D (A) R DSon = V DS / I D tp = µs I der (%) µs 8 ms - P D.C. t p δ = T ms ms - t p T t 3 V DS 5 5 T sp ( C) Fig. Safe operating area; continuous and peak drain currents as a function of drain-source voltage Fig. Normalized continuous drain current as a function of solder point temperature 3aa7 3ac9 P der (%) I AS (A) 8 5 C T j prior to avalanche = 5 C 5 5 T sp ( C) t p (ms) Unclamped inductive load; V DD 5 V; R GS = 5 Ω; V GS = 5 V; starting T j = 5 C and 5 C. Fig 3. Normalized total power dissipation as a function of solder point temperature Fig. Non-repetitive avalnche ruggednes current as a function of pulse duration All information provided in this document is subject to legal disclaimers. NXP B.V.. All rights reserved. Product data sheet Rev. 8 October 3 of 3

4 6. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit R th(j-sp) thermal resistance mounted on a metal clad substrate K/W from junction to solder point R th(j-a) thermal resistance from junction to ambient mounted on a printed-circuit board ; minimum footprint K/W 3ac8 Zth(j-sp) (K/W) d = P t p δ = T single pulse t p t T tp (s) Fig 5. T sp = 5 C Transient thermal impedance from junction to solder point as a function of pulse duration 7. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics V (BR)DSS drain-source I D =5µA; V GS =V; T j = -55 C V breakdown voltage I D =5µA; V GS =V; T j = 5 C 3 - V V GS(th) gate-source threshold I D =ma; V DS =V GS ; T j = 5 C; V voltage see Figure 9 I D =ma; V DS =V GS ; T j =-55 C; V see Figure 9 I D =ma; V DS =V GS ; T j =5 C; - V see Figure 9 I GSS gate leakage current V GS =-V; V DS =V; T j = 5 C - na V GS =V; V DS =V; T j = 5 C - na All information provided in this document is subject to legal disclaimers. NXP B.V.. All rights reserved. Product data sheet Rev. 8 October of 3

5 Table 7. Characteristics continued Symbol Parameter Conditions Min Typ Max Unit mω R DSon drain-source on-state resistance V GS =5V; I D =.75 A; T j =5 C; see Figure ; see Figure V GS =5V; I D =.75 A; T j =5 C; see Figure ; see Figure - 5 mω Dynamic characteristics Q G(tot) total gate charge I D =3.5A; V DS =8V; V GS =5V; nc Q GS gate-source charge T j =5 C; see Figure -. - nc Q GD gate-drain charge nc t d(on) turn-on delay time V DS =5V; R L =5Ω; V GS =5V; - - ns t r rise time R G(ext) =6Ω; T j =5 C - - ns t d(off) turn-off delay time ns t f fall time - - ns Source-drain diode V SD source-drain voltage I S = 3.5 A; V GS =V; T j =5 C; V see Figure 3 t rr reverse recovery time I S = 3.5 A; di S /dt = - A/µs; ns Q r recovered charge V GS =V; V DS =3V; T j =5 C - - nc I D (A) 9 8 T j = 5 C 3ac85 V GS = 5V I D (A) 9 8 V DS > I D X R DSon 3ac87 7 3V 7 6.8V 6 5.6V 5 3.V.V V V DS (V) 3 5 C T j = 5 C V GS (V) Fig 6. Output characteristics: drain current as a function of drain-source voltage; typical values Fig 7. Transfer characteristics: drain current as a function of gate-source voltage; typical values All information provided in this document is subject to legal disclaimers. NXP B.V.. All rights reserved. Product data sheet Rev. 8 October 5 of 3

6 - 3aa36.5 3aa33 I D (A) - V GS(th) (V) max -3 min typ max.5 typ - min V GS (V) -6 6 T j ( C) 8 T j = 5 C; V DS = 5 V Fig 8. Sub-threshold drain current as a function of gate-source voltage Fig 9. Gate-source threshold voltage as a function of junction temperature R DSon (Ω).9.8 V.V.V 3ac86 T j = 5 C a 3 3aa V..3..8V 3V V GS = 5V I D (A) T j ( C) Fig. Drain-source on-state resistance as a function of drain current; typical values Fig. Normalized drain-source on-state resistance factor as a function of junction temperature All information provided in this document is subject to legal disclaimers. NXP B.V.. All rights reserved. Product data sheet Rev. 8 October 6 of 3

7 V GS (V) 8 I D = 3.5 A T j = 5 C 3ac9 I S (A) 8 V GS = V 3ac V DS = V V DS = 8 V 5 C T j = 5 C 6 8 Q G (nc)..8. V SD (V) Fig. Gate-source voltage as a function of gate charge; typical values Fig 3. Source current as a function of source-drain voltage; typical values All information provided in this document is subject to legal disclaimers. NXP B.V.. All rights reserved. Product data sheet Rev. 8 October 7 of 3

8 8. Package outline Plastic surface-mounted package with increased heatsink; leads SOT3 D B E A X c y H E v M A b Q A A 3 L p e b p w M B detail X e mm scale DIMENSIONS (mm are the original dimensions) UNIT A A b p b c D E e e H E L p Q v w y mm OUTLINE VERSION REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE SOT3 SC Fig. Package outline SOT3 (SC-73) All information provided in this document is subject to legal disclaimers. NXP B.V.. All rights reserved. Product data sheet Rev. 8 October 8 of 3

9 9. Soldering ( ). ( ) solder lands solder resist solder paste 3 occupied area Dimensions in mm.3.3. (3 ).3 (3 ) 6.5 sot3_fr Fig 5. Reflow soldering footprint for SOT3 (SC-73) solder lands solder resist occupied area 3.9 (3 ) Dimensions in mm preferred transport direction during soldering ( ) sot3_fw Fig 6. Wave soldering footprint for SOT3 (SC-73) All information provided in this document is subject to legal disclaimers. NXP B.V.. All rights reserved. Product data sheet Rev. 8 October 9 of 3

10 . Revision history Table 8. Revision history Document ID Release date Data sheet status Change notice Supersedes v. 8 Product data sheet - v. Modifications: The format of this document has been redesigned to comply with the new identity guidelines of. Legal texts have been adapted to the new company name where appropriate. Product profile : updated 7 Characteristics : Q G(tot) value corrected Legal information : updated v. 9 Product specification - - All information provided in this document is subject to legal disclaimers. NXP B.V.. All rights reserved. Product data sheet Rev. 8 October of 3

11 . Legal information. Data sheet status Document status [] [] Product status [3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [] Please consult the most recently issued document before initiating or completing a design. [] The term 'short data sheet' is explained in section "Definitions". [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL Definitions Preview The document is a preview version only. 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Customers are responsible for the design and operation of their applications and products using products, and accepts no liability for any assistance with applications or customer product design. It is customer s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer s applications and products planned, as well as for the planned application and use of customer s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer s applications or products, or the application or use by customer s third party customer(s). Customer is responsible for doing all necessary testing for the customer s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer s third party customer(s). NXP does not accept any liability in this respect. Limiting values Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 63) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. All information provided in this document is subject to legal disclaimers. NXP B.V.. All rights reserved. Product data sheet Rev. 8 October of 3

12 Terms and conditions of commercial sale products are sold subject to the general terms and conditions of commercial sale, as published at unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. hereby expressly objects to applying the customer s general terms and conditions with regard to the purchase of products by customer. No offer to sell or license Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. Non-automotive qualified products Unless this data sheet expressly states that this specific product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond specifications such use shall be solely at customer s own risk, and (c) customer fully indemnifies for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond standard warranty and product specifications.. Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV, FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE, ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse, QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET, TrenchMOS, TriMedia and UCODE are trademarks of NXP B.V. HD Radio and HD Radio logo are trademarks of ibiquity Digital Corporation.. Contact information For more information, please visit: For sales office addresses, please send an to: salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. NXP B.V.. All rights reserved. Product data sheet Rev. 8 October of 3

13 3. Contents Product profile General description Features and benefits Applications Quick reference data Pinning information Ordering information Marking Limiting values Thermal characteristics Characteristics Package outline Soldering Revision history Legal information Data sheet status Definitions Disclaimers Trademarks Contact information Please be aware that important notices concerning this document and the product(s) described herein, have been included in section Legal information. NXP B.V.. All rights reserved. For more information, please visit: For sales office addresses, please send an to: salesaddresses@nxp.com Date of release: 8 October Document identifier: