Datasheet of SAW Device

Size: px
Start display at page:

Download "Datasheet of SAW Device"

Transcription

1 Datasheet of SAW Device SAW Duplexer for Band1 / Unbalanced / LR /1814 Murata PN: SAYRH1G95BAFA Feature LTE-A 1.8x1.4mm Size High Power Durability Note : Murata SAW Component is applicable for Cellular /Cordless phone (Terminal) relevant market only. Please also read caution at the end of this document.

2 Revision Number Date SAYRH1G95BAFA_rev. A Jul Initial Release SAYRH1G95BAFA_rev. B Sep Updated SPEC SAYRH1G95BAFA_rev. C Nov Updated for MP SAYRH1G95BAFA_rev. D Apr Updated General Information SAYRH1G95BAFA_rev. E Oct Updated General Information SAYRH1G95BAFA_rev. F Nov Updated Input Power Description - Operating temperature - Storage temperature - Input Power - D.C. Volatage between the terminals - Minimum Resistance between the terminals - RoHS compliance : Yes - ESD (ElectroStatic Discharge) sensitive device : -2 to +85 deg.c : -4 to +85 deg.c : +3 dbm 5 h +5 deg.c : 3V (25+/-2 deg.c) : 1M ohm All Rights Reserved, Copyright Murata Manufacturing Co., Ltd 1/11

3 Package Dimensions & Recommended Land Pattern unit: mm Dimensions Marking : Laser Printing * : Month code(refer to the table A) $ : Date code(refer to the table B) 1 : 7 2 : S 3 : A Terminal Number (6) : Ant (3) : TX (1) : RX Others : GND Land Pattern Notice) Please refer to Measurement Circuit for Port information in detail. Measurement Circuit (Top Thru View) R1 : 5 ohm R2 : 5 ohm L1 :2.7nH(Ideal inductor) :3nH(LQP3TN3N) <Reference> L2 :1.8nH(Ideal inductor) C :.8pF(Ideal capacitor) R3 : 5 ohm All Rights Reserved, Copyright Murata Manufacturing Co., Ltd 2/11

4 Electrical Characteristic < TX ANT. > Characteristics TX ANT. ( -2 to +85 deg.c ) Unit Note min. typ.* max. Center Frequency 195 MHz Insertion Loss 192. to 198. MHz db to MHz db to MHz db INT Any 4.5MHz Ripple Deviation 192. to 198. MHz.2.5 db Over any 5MHz in-band VSWR 192. to 198. MHz TX Absolute Attenuation 192. to 198. MHz ANT. 1. to MHz db 42. to 494. MHz 4 45 db 45MHz RX Att to 849. MHz 3 37 db B26 TX CA 88. to 915. MHz 3 36 db B8 TX CA 925. to 96. MHz 3 35 db ISM to 125. MHz 3 35 db GPS L to MHz 3 41 db B11/21 TX CA to MHz db B11/21 RX to MHz db Compass to MHz db Wideband GPS lower side to MHz db Regular GPS main lobe to MHz db Wideband GPS upper side to MHz db GLONASS to 185. MHz db 185. to MHz 2 23 db Protected DCS band to 188. MHz 1 23 db Protected DCS band 188. to MHz db 21. to 225. MHz 2 27 db +15 to +85deg.C 211. to 217. MHz db IMT Att. 23. to 24. MHz db B4 24. to 25. MHz db ISM to 269. MHz db Protected 2.6GHz band 384. to 396. MHz 2 25 db 2f 49. to 595. MHz db 3f 495. to MHz db WLAN 81.11a 768. to 792. MHz db 4f 96. to 99. MHz 1 25 db 5f to MHz 1 2 db 6f * Typical value at 25±2deg.C All Rights Reserved, Copyright Murata Manufacturing Co., Ltd 3/11

5 Electrical Characteristic < ANT. RX > Characteristics ANT. RX ( -2 to +85 deg.c ) Unit Note min. typ.* max. Center Frequency 214 MHz Insertion Loss 211. to 217. MHz db to MHz db to MHz db INT Any 4.5MHz Ripple Deviation 211. to 217. MHz db VSWR 211. to 217. MHz RX 211. to 217. MHz ANT. Absolute Attenuation 1. to 192. MHz db 19. MHz 5 79 db RX-TX 718. to 748. MHz 4 56 db B28-B TX CA 814. to 849. MHz 4 54 db B26 TX CA 88. to 915. MHz 4 54 db B8 TX CA to MHz db B11/21 TX CA 173. to 179. MHz 35 4 db 2TX-RX 171. to MHz db B3 TX CA 192. to 198. MHz db TX 198. to 215. MHz db 215. to 275. MHz db to 613. MHz 24 3 db (RX+TX)/2 23. to 24. MHz db B4 24. to 25. MHz 3 35 db ISM to 257. MHz db B7 TX CA 43. to 415. MHz db RX+TX 422. to 434. MHz db 2f 434. to MHz db 49. to 595. MHz db ISM 5G 595. to 613. MHz db RX+2TX 613. to 633. MHz db 633. to 651. MHz db 3f 844. to 868. MHz db 4f 155. to 185. MHz db 5f to 132. MHz db 6f * Typical value at 25±2deg.C All Rights Reserved, Copyright Murata Manufacturing Co., Ltd 4/11

6 Electrical Characteristic < TX RX. > Isolation TX RX Characteristics ( -2 to +85 deg.c ) min. typ.* max. Unit Note to MHz 4 71 db 192. to 198. MHz 53 6 db TX to MHz 53 6 db TX to MHz 53 6 db INT Any 4.5MHz, TX 211. to 217. MHz db RX to MHz db RX to MHz db INT Any 4.5MHz, RX 383. to 397. MHz 2 55 db TX 2nd harmonic Att to 595. MHz 2 8 db TX 3rd harmonic Att. * Typical value at 25±2deg.C All Rights Reserved, Copyright Murata Manufacturing Co., Ltd 5/11

7 Electrical Characteristic < TX ANT. > TX -> Ant I.L.[dB] Freqrency[MHz] TX -> Ant I.L.[dB] Freqrency[MHz] All Rights Reserved, Copyright Murata Manufacturing Co., Ltd 6/11

8 Electrical Characteristic < ANT. RX > Ant. -> RX I.L.[dB] Freqrency[MHz] Ant. -> RX I.L.[dB] Freqrency[MHz] All Rights Reserved, Copyright Murata Manufacturing Co., Ltd 7/11

9 Electrical Characteristic < TX RX. > TX -> RX I.L.[dB] Freqrency[MHz] TX -> RX I.L.[dB] Freqrency[MHz] All Rights Reserved, Copyright Murata Manufacturing Co., Ltd 8/11

10 Dimensions of Tape & Reel unit: mm Carrier Tape A: 8 J: 1.7 B: 1.75 K: 2.1 C: 3.5 L:.7 D: 4 E: 2 F: 4 G: φ1.5 H: 1 Tape 16 min. Trailer tape Components Cover tape 8~28 Leader Cavity 4~56 Unit: mm Reel φ178reel φ33reel A: φ13 A: φ13 B: 135max B: 155max C: 9 C: 95 D: φ6 D: φ1 E: φ178 E: φ33 SAYRH1G95BAFAR 1pcs (φ33) SAYRH1G95BAFAR1S Sample Order (φ178/33) All Rights Reserved, Copyright Murata Manufacturing Co., Ltd 9/11

11 Marking Code Table A: Month Code Table B: Date Code date 1st 2nd 3rd 4th 5th 6th 7th 8th 9th 1th code A B C D E F G H J K date 11th 12th 13th 14th 15th 16th 17th 18th 19th 2th code L M N P Q R S T U V date 21st 22nd 23rd 24th 25th 26th 27th 28th 29th 3th 31st code W X Y Z a b c d e f g Important Notice (1/2) PLEASE READ THIS NOTICE BEFORE USING OUR PRODUCTS Please make sure that your product has been evaluated and confirmed from the aspect of the fitness for the specifications of our product when our product is mounted to your product All the items and parameters in this product specification/datasheet/catalog have been prescribed on the premise that our product is used for the purpose, under the condition and in the environment specified in this specification You are requested not to use our product deviating from the condition and the environment specified in this specification Please note that the only warranty that we provide regarding the products is its conformance to the specifications provided herein Accordingly, we shall not be responsible for any defects in products or equipment incorporating such products, which are caused under the conditions other than those specified in this specification WE HEREBY DISCLAIMS ALL OTHER WARRANTIES REGARDING THE PRODUCTS, EXPRESS OR IMPLIED, INCLUDING WITHOUT LIMITATION ANY WARRANTY OF FITNESS FOR A PARTICULAR PURPOSE, THAT THEY ARE DEFECT-FREE, OR AGAINST INFRINGEMENT OF INTELLECTUAL PROPERTY RIGHTS The product shall not be used in any application listed below which requires especially high reliability for the prevention of such defect as may directly cause damage to the third party's life, body or property You acknowledge and agree that, if you use our products in such applications, we will not be responsible for any failure to meet such requirements Furthermore, YOU AGREE TO INDEMNIFY AND DEFEND US AND OUR AFFILIATES AGAINST ALL CLAIMS, DAMAGES, COSTS, AND EXPENSES THAT MAY BE INCURRED, INCLUDING WITHOUT LIMITATION, ATTORNEY FEES AND COSTS, DUE TO THE USE OF OUR PRODUCTS IN SUCH APPLICATIONS. All Rights Reserved, Copyright Murata Manufacturing Co., Ltd 1/11

12 Important Notice (2/2) - Aircraft equipment. - Aerospace equipment - Undersea equipment. - Power plant control equipment - Medical equipment. - Transportation equipment (vehicles, trains, ships, elevator, etc.). - Traffic signal equipment. - Disaster prevention / crime prevention equipment. - Burning / explosion control equipment - Application of similar complexity and/ or reliability requirements to the applications listed in the above. We expressly prohibit you from analyzing, breaking, Reverse-Engineering, remodeling altering, and reproducing our product. Our product cannot be used for the product which is prohibited from being manufactured, used, and sold by the regulations and laws in the world. Please do not use the product in molding condition. This product is ESD (ElectroStatic Discharge) sensitive device. When you install or measure this, you should be careful not to add antistatic electricity or high voltage. Please be advised that you had better check anti serge voltage. We do not warrant or represent that any license, either express or implied, is granted under any our patent right, copyright, mask work right, or our other intellectual property right relating to any combination, machine, or process in which our products or services are used. Information provided by us regarding third-party products or services does not constitute a license from us to use such products or services or a warranty or endorsement thereof. Use of such information may require a license from a third party under the patents or other intellectual property of the third party, or a license from us under our patents or other intellectual property. Please do not use our products, our technical information and other data provided by us for the purpose of developing of mass-destruction weapons and the purpose of military use. Moreover, you must comply with "foreign exchange and foreign trade law", the "U.S. export administration regulations", etc. Please note that we may discontinue the manufacture of our products, due to reasons such as end of supply of materials and/or components from our suppliers. Customer acknowledges that Murata will, if requested by you, conduct a failure analysis for defect or alleged defect of Products only at the level required for consumer grade Products, and thus such analysis may not always be available or be in accordance with your request (for example, in cases where the defect was caused by components in Products supplied to Murata from a third party). The product shall not be used in any other application/model than that of claimed to Murata. Customer acknowledges that engineering samples may deviate from specifications and may contain defects due to their development status. We reject any liability or product warranty for engineering samples. In particular we disclaim liability for damages caused by the use of the engineering sample other than for evaluation purposes, particularly the installation or integration in the product to be sold by you, deviation or lapse in function of engineering sample, improper use of engineering samples. We disclaim any liability for consequential and incidental damages. If you can t agree the above contents, you should inquire our sales. All Rights Reserved, Copyright Murata Manufacturing Co., Ltd 11/11

Datasheet of SAW Device

Datasheet of SAW Device Datasheet of SAW Device SAW Duplexer for Band3 / Unbalanced / LR /1814 Murata PN: SAYEY1G74BCBA Feature LTE-A High Power Durability Note : Murata SAW Component is applicable for Cellular /Cordless phone

More information

Datasheet of SAW Device

Datasheet of SAW Device Datasheet of SAW Device SAW Duplexer for Band12 / Unbalanced / LR /1814 Murata PN: SAYEY77MBAFA Feature LTE-A High Power Durability Good 3f Linearity Note : Murata SAW Component is applicable for Cellular

More information

Datasheet of SAW Device

Datasheet of SAW Device Datasheet of SAW Device SAW Duplexer for Band7 / Unbalanced / LR /1814 Murata PN: SAYEY2G53BCFA Feature LTE-A High WiFi Attenuation Low Insertion Loss Note : Murata SAW Component is applicable for Cellular

More information

Datasheet of SAW Device

Datasheet of SAW Device Datasheet of SAW Device SAW Duplexer for Band5 / Balanced / LR /1814 Murata PN: SAYEY836MCAFA Feature Low Insertion Loss LTE-A Note : Murata SAW Component is applicable for Cellular /Cordless phone (Terminal)

More information

Datasheet of SAW Device

Datasheet of SAW Device Datasheet of SAW Device SAW Duplexer for Band1 / Unbalanced / LR /216 Murata PN: SAYRF1G95GEFA Feature High Band34 Attenution High Isolation LTE-A Note : Murata SAW Component is applicable for Cellular

More information

Datasheet of SAW Device

Datasheet of SAW Device Datasheet of SAW Device SAW Duplexer for Band28B / Balanced / LR /1814 Murata PN: SAYEY733MCAFA Feature Small Size Covered Band28B Frequency LTE-A Note : Murata SAW Component is applicable for Cellular

More information

Datasheet of SAW Device

Datasheet of SAW Device Datasheet of SAW Device SAW Dual Filter for Band1_Band21 / 1in2out Unbalanced / HL /1511 Murata PN: SAWFD1G5ABFA Feature For CA Note : Murata SAW Component is applicable for Cellular /Cordless phone (Terminal)

More information

Datasheet of SAW Device

Datasheet of SAW Device Datasheet of SAW Device SAW Single Filter for GPS_GALILEO / Unbalanced / 5pin /1109 Murata PN: SAFFB1G18AA0F0A Feature Support GPS(L5)+GALILEO(E5b) GNSS system Note : Murata SAW Component is applicable

More information

Datasheet of SAW Device

Datasheet of SAW Device Datasheet of SAW Device SAW Single Filter for Band41 / Unbalanced / 5pin /1411 Murata PN: SAFEA2G53MA1F0A Feature Band41 Lower side 2496-2566MHz Note : Murata SAW Component is applicable for Cellular /Cordless

More information

Datasheet of SAW Device

Datasheet of SAW Device Datasheet of SAW Device SAW I.H.P. WiFi Filter for ISM2.4G / Unbalanced / 5pin /1109 Murata PN: SAFQA2G45MA0G0A Feature I.H.P. SAW Low Insertion Loss High-Q Performance for Coexistence Note : Murata SAW

More information

Datasheet of SAW Device

Datasheet of SAW Device Datasheet of SAW Device SAW Single Filter for B40 / Unbalanced / 5pin /1411 Murata PN: SAFEA2G35MF0F0A Feature Band40 Post PA SAW High Rejection for GSM/ISM/TD-LTE Band Note : Murata SAW Component is applicable

More information

Datasheet of SAW Device

Datasheet of SAW Device Datasheet of SAW Device SAW Duplexer for Band20 / Unbalanced / LR /2016 Murata PN: SAYFH806MBA0F0A Feature LTE-A Low Insertion Loss High Isolation Note : Murata SAW Component is applicable for Cellular

More information

Datasheet of SAW Device

Datasheet of SAW Device Datasheet of SAW Device SAW Single Filter for GPS_GLONASS_BEIDOU / Unbalanced / 5pin /1109 Murata PN: SAFFB1G56KB0F0A Feature Low Insertion Loss Note : Murata SAW Component is applicable for Cellular /Cordless

More information

Datasheet of SAW Device

Datasheet of SAW Device Datasheet of SAW Device SAW Single Filter for Band2 / Unbalanced / 5pin /1109 Murata PN: SAFFB1G96AB0F0A Feature GSM1900/Band2 Rx Note : Murata SAW Component is applicable for Cellular /Cordless phone

More information

Datasheet of SAW Device

Datasheet of SAW Device Datasheet of SAW Device SAW Single Filter for Band41 / Unbalanced / 4pin /2016 Murata PN: SAFRE2G59MA0F0A Feature Full Band 41 SAW Filter ISM2.4GHz Co-Existence Low Insertion Loss for Rx&Tx Note : Murata

More information

Datasheet of SAW Device

Datasheet of SAW Device Datasheet of SAW Device SAW Dual Filter for Band1_Band13 / 1in4out Balanced / LH /1511 Murata PN: SAWFD751MCAFA Feature Diplex dual SAW filter Small size 1511 mm 1 ohm balanced Note : Murata SAW Component

More information

Datasheet of SAW Device

Datasheet of SAW Device Datasheet of SAW Device SAW Single Filter for Band30 / Unbalanced / 5pin /1109 Murata PN: SAFFB2G35KA1F0A Feature For Diversity Rx High Attenuation Note : Murata SAW Component is applicable for Cellular

More information

Datasheet of SAW Device

Datasheet of SAW Device Datasheet of SAW Device SAW Extractor for ISM2.4G / 1in2out Unbalanced / LH /1814 Murata PN: SADEN2G45MAFA Feature Sharing ANT of ISM2.4 and Cellband Suitable for 4x4 MIMO Usable Cell Band(699-237MHz/2555-269MHz)

More information

Datasheet of SAW Device

Datasheet of SAW Device Datasheet of SAW Device SAW Dual Filter for Band1_Band25 / 1in2out Unbalanced / LH /1511 Murata PN: SAWFD1G96AM1FA Feature For Diversity Rx Note : Murata SAW Component is applicable for Cellular /Cordless

More information

Datasheet of SAW Device

Datasheet of SAW Device Datasheet of SAW Device SAW Dual Filter for Band34_Band39 / 1in2out Unbalanced / LH /1511 Murata PN: SAWFD1G9KEFA Feature Low Insertion Loss Note : Murata SAW Component is applicable for Cellular /Cordless

More information

Data Sheet of SAW Components

Data Sheet of SAW Components Data Sheet of SAW Components Note : Murata SAW Component is applicable for Cellular /Cordless phone (Terminal) relevant market only. Please also read caution at the end of this document. Package Dimensions

More information

Data Sheet of SAW Components

Data Sheet of SAW Components Data Sheet of SAW Components Note : Murata SAW Component is applicable for Cellular /Cordless phone (Terminal) relevant market only. Please also read caution at the end of this document. Package Dimensions

More information

Data Sheet of SAW Components

Data Sheet of SAW Components Data Sheet of SAW Components Note : Murata SAW Component is applicable for Cellular /Cordless phone (Terminal) relevant market only. Please also read caution at the end of this document. 5-0.325±0.050

More information

SKY LF: PHEMT GaAs IC SP3T Switch GHz

SKY LF: PHEMT GaAs IC SP3T Switch GHz DATA SHEET SKY1339-37LF: PHEMT GaAs IC SP3T Switch.1 3. GHz Features Positive low voltage control (/3 V) Low insertion loss (.5 db at.5 GHz) High isolation (5 db at.5 GHz) Simplified Block Diagram RF3

More information

DPDT SWITCH FOR 2.4 GHz AND 6 GHz DUAL-BAND WIRELESS LAN

DPDT SWITCH FOR 2.4 GHz AND 6 GHz DUAL-BAND WIRELESS LAN DPDT SWITCH FOR 2.4 GHz AND 6 GHz DUAL-BAND WIRELESS LAN DESCRIPTION GaAs INTEGRATED CIRCUIT The is a GaAs MMIC DPDT (Double Pole Double Throw) switch which was developed for 2.4 GHz and 6 GHz dual-band

More information

Ultra low quiescent current, Fast Load Transient 300 ma CMOS Low Drop-Out Regulator in ultra small package

Ultra low quiescent current, Fast Load Transient 300 ma CMOS Low Drop-Out Regulator in ultra small package TOSHIBA CMOS Linear Integrated Circuit Silicon Monolithic TCR3UG series Ultra low quiescent current, Fast Load Transient 300 ma CMOS Low Drop-Out Regulator in ultra small package 1. Description The TCR3UG

More information

TA75W01FU TA75W01FU. Dual Operational Amplifier. Features Pin Connection (Top View)

TA75W01FU TA75W01FU. Dual Operational Amplifier. Features Pin Connection (Top View) TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA75W01FU Dual Operational Amplifier Features In the linear mode the input common mode voltage range includes ground. The internally compensated

More information

SKY LF: PHEMT GaAs IC High-Power 4-CTL DPDT Switch LF 6 GHz

SKY LF: PHEMT GaAs IC High-Power 4-CTL DPDT Switch LF 6 GHz data sheet SKY13318-321LF: PHEMT GaAs IC High-Power 4-CTL DPDT Switch LF 6 GHz Features l Application 82.11a (5.2 5.8 GHz) and 82.11b, (2.4 GHz) diversity l Operating frequency LF 6 GHz l Positive low

More information

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK3078A

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK3078A TOSHIBA Field Effect Transistor Silicon N Channel MOS Type VHF/UHF Band Amplifier Applications (Note)The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications

More information

SKY LF: 300 khz 3 GHz Medium Power GaAs SPDT Switch

SKY LF: 300 khz 3 GHz Medium Power GaAs SPDT Switch DATA SHEET SKY13268-344LF: 3 khz 3 GHz Medium Power GaAs SPDT Switch Applications Transceiver transmit-receive switching in GSM, CDMA, WCDMA, WLAN, Bluetooth, Zigbee, land mobile radio base stations or

More information

SKY LF: GHz SP10T Switch with GPIO Interface

SKY LF: GHz SP10T Switch with GPIO Interface PRELIMINARY DATA SHEET SKY13404-466LF: 0.4-2.7 GHz SP10T Switch with GPIO Interface Applications 2G/3G multimode cellular handsets (UMTS, CDMA2000, EDGE, GSM) Embedded data cards Features Broadband frequency

More information

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1829

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1829 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1829 High Speed Switching Applications Analog Switch Applications Unit: mm 2.5 V gate drive Low threshold voltage: V th = 0.5 to 1.5 V High

More information

TOSHIBA Field Effect Transistor Silicon N-Channel Dual Gate MOS Type 3SK292

TOSHIBA Field Effect Transistor Silicon N-Channel Dual Gate MOS Type 3SK292 TOSHIBA Field Effect Transistor Silicon N-Channel Dual Gate MOS Type 3SK292 TV Tuner, VHF RF Amplifier Application Unit: mm Superior cross modulation performance. Low reverse transfer capacitance: C rss

More information

2-Channel EMI-Filter with ESD-Protection

2-Channel EMI-Filter with ESD-Protection 2-Channel EMI-Filter with 9499 6 5 4 2 3 MARKING (example only) XX YY Dot = pin marking YY = type code (see table below) XX = date code 9957 2 FEATURES Ultra compact LLP75-6A package 2-channel EMI-filter

More information

TI Designs: Biometric Steering Wheel. Amy Ball TIDA-00292

TI Designs: Biometric Steering Wheel. Amy Ball TIDA-00292 www.ti.com 2 Biometric Steering Wheel - -Revised July 2014 www.ti.com TI Designs: Biometric Steering Wheel - -Revised July 2014 Biometric Steering Wheel 3 www.ti.com 4 Biometric Steering Wheel - -Revised

More information

AA104-73/-73LF: 300 khz-2.5 GHz One-Bit Digital Attenuator

AA104-73/-73LF: 300 khz-2.5 GHz One-Bit Digital Attenuator DATA SHEET AA104-73/-73LF: 300 khz-2.5 GHz One-Bit Digital Attenuator (32 ) Applications Sixth-bit value for Skyworks AA260-85 and AA101-80 digital attenuators IF and RF components for cable, GSM, PCS,

More information

SKY : GHz SP3T/SPDT Wire-Bondable GaAs Die

SKY : GHz SP3T/SPDT Wire-Bondable GaAs Die DATA SHEET SKY13434-002: 0.1 6.0 GHz SP3T/SPDT Wire-Bondable GaAs Die Applications 802.11 a/b/g/n/ac WLAN networks Embedded modules Features SP3T (2.5 GHz) and SPDT (5.0 GHz) switches with Bluetooth capability

More information

Old Company Name in Catalogs and Other Documents

Old Company Name in Catalogs and Other Documents To our customers, Old Company Name in Catalogs and Other Documents On April 1 st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took

More information

TOSHIBA Field Effect Transistor Silicon N-Channel Dual Gate MOS Type 3SK294

TOSHIBA Field Effect Transistor Silicon N-Channel Dual Gate MOS Type 3SK294 TOSHIBA Field Effect Transistor Silicon N-Channel Dual Gate MOS Type TV Tuner, VHF RF Amplifier Application Unit: mm Superior cross modulation performance Low reverse transfer capacitance: C rss = 20 ff

More information

Old Company Name in Catalogs and Other Documents

Old Company Name in Catalogs and Other Documents To our customers, Old Company Name in Catalogs and Other Documents On April 1 st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took

More information

WIDE BAND DPDT SWITCH

WIDE BAND DPDT SWITCH WIDE BAND DPDT SWITCH CMOS INTEGRATED CIRCUIT DESCRIPTION The is a CMOS MMIC DPDT (Double Pole Double Throw) switch which is developed for mobile communications, wireless communications and another RF

More information

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ200

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ200 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type High Power Amplifier Application Unit: mm High breakdown voltage : V DSS = 180 V High forward transfer admittance : Y fs = 4.0 S (typ.) Complementary

More information

Old Company Name in Catalogs and Other Documents

Old Company Name in Catalogs and Other Documents To our customers, Old Company Name in Catalogs and Other Documents On April 1 st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took

More information

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK2009

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK2009 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK2009 High Speed Switching Applications Analog Switch Applications Unit: mm High input impedance. Low gate threshold voltage: V th = 0.5~1.5

More information

GaAs INTEGRATED CIRCUIT

GaAs INTEGRATED CIRCUIT DATA SHEET GaAs INTEGRATED CIRCUIT μpg249t6x HIGH POWER SPDT SWITCH FOR WiMAX TM DESCRIPTION The μpg249t6x is a GaAs MMIC high power SPDT (Single Pole Double Throw) switch which were designed for WiMAX.

More information

SKY LF: GaAs Digital Attenuator 5-Bit, 1 db LSB 400 MHz 4 GHz

SKY LF: GaAs Digital Attenuator 5-Bit, 1 db LSB 400 MHz 4 GHz data sheet SKY12329-35LF: GaAs Digital Attenuator 5-Bit, 1 db LSB 4 MHz 4 GHz Applications l Transceiver transmit automatic level control or receive automatic gain control in WiMAX, GSM, CDMA, WCDMA, WLAN,

More information

RFX8053: CMOS 5 GHz WLAN ac RFeIC with PA, LNA, and SPDT

RFX8053: CMOS 5 GHz WLAN ac RFeIC with PA, LNA, and SPDT DATA SHEET RFX8053: CMOS 5 GHz WLAN 802.11ac RFeIC with PA, LNA, and SPDT Applications 802.11a/n/ac WiFi devices Smartphones Tablets/MIDs Gaming Consumer electronics Notebooks/netbooks/ultrabooks Mobile/portable

More information

SKYA21029: 0.1 to 3.8 GHz SP4T Antenna Switch

SKYA21029: 0.1 to 3.8 GHz SP4T Antenna Switch DATA SHEET SKYA21029: 0.1 to 3.8 GHz SP4T Antenna Switch Applications 2G/3G/4G/4G LTE, 4G LTE-A Embedded cellular telematics modules OBD-II cellular modems RF1 Features RF2 Broadband frequency range: 0.1

More information

LDO Regulators Glossary

LDO Regulators Glossary Outline This document provides the definitions of the terms used in LDO regulator datasheets. 1 Table of Contents Outline... 1 Table of Contents... 2 1. Absolute maximum ratings... 3 2. Operating range...

More information

SKY LF: GHz SP10T Switch with GPIO Interface

SKY LF: GHz SP10T Switch with GPIO Interface DATA SHEET SKY13404-466LF: 0.4-2.7 GHz SP10T Switch with GPIO Interface Applications 2G/3G multimode cellular handsets (UMTS, CDMA2000, EDGE, GSM) Embedded data cards Features Broadband frequency range:

More information

DATA SHEET NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 4-PIN SUPER MINIMOLD (18)

DATA SHEET NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 4-PIN SUPER MINIMOLD (18) FEATURES DATA SHEET NPN SILICON RF TRANSISTOR NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION -PIN SUPER MINIMOLD (8) High ft: ft = GHz TYP. @, IC = ma, f = GHz Low noise

More information

SKY LF: GHz Two-Way, 0 Degrees Power Divider

SKY LF: GHz Two-Way, 0 Degrees Power Divider DATA SHEET SKY16406-381LF: 2.2-2.8 GHz Two-Way, 0 Degrees Power Divider Applications TD-LTE systems Satellite communications 2.4 GHz ISM band Features Low insertion loss: 0.3 db @ 2.5 GHz High isolation:

More information

DATA SHEET NE68030 / 2SC4228 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN SUPER MINIMOLD

DATA SHEET NE68030 / 2SC4228 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN SUPER MINIMOLD DESCRIPTION DATA SHEET NPN SILICON RF TRANSISTOR NE683 / SC8 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN SUPER MINIMOLD The NE683 / SC8 is a low supply voltage

More information

TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5086. Characteristics Symbol Test Condition Min Typ. Max Unit

TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5086. Characteristics Symbol Test Condition Min Typ. Max Unit TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5086 VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure, high gain. NF = 1.1dB, S 21e 2 = 11dB (f = 1 GHz) Absolute Maximum

More information

SiGe:C LOW NOISE AMPLIFIER FOR GPS

SiGe:C LOW NOISE AMPLIFIER FOR GPS DESCRIPTION The µpc8tn is a silicon germanium carbon (SiGe:C) monolithic integrated circuit designed as low noise amplifier for GPS. This device exhibits low noise figure and high power gain characteristics,

More information

SAW components. SAW RF filter Digital radio. RF360 Europe GmbH A Qualcomm TDK Joint Venture. Date: April 26, 2017 Version: 2.1

SAW components. SAW RF filter Digital radio. RF360 Europe GmbH A Qualcomm TDK Joint Venture. Date: April 26, 2017 Version: 2.1 A Qualcomm TDK Joint Venture Digital radio Series/type: Ordering code: B39232U410 Date: April 26, 2017 Version: 2.1 RF360 products mentioned within this document are offered by RF360 Europe GmbH and other

More information

TLP3924 TELECOMMUNICATION PROGRAMMABLE CONTROLLERS MOSFET GATE DRIVER. Features. Pin Configuration (top view)

TLP3924 TELECOMMUNICATION PROGRAMMABLE CONTROLLERS MOSFET GATE DRIVER. Features. Pin Configuration (top view) TOSHIBA PHOTOCOUPLER GaAlAs IRED & PHOTO DIODE ARRAY TELECOMMUNICATION PROGRAMMABLE CONTROLLERS MOSFET GATE DRIVER. Unit: mm φ. The TOSHIBA SSOP coupler is a small outline coupler, suitable for surface

More information

TC7USB3212WBG TC7USB3212WBG. 1. Functional Description. 2. General. 3. Features. 4. Packaging and Pin Assignment (Top View) 4.1.

TC7USB3212WBG TC7USB3212WBG. 1. Functional Description. 2. General. 3. Features. 4. Packaging and Pin Assignment (Top View) 4.1. CMOS Digital Integrated Circuits Silicon Monolithic TC7USB3212WBG TC7USB3212WBG 1. Functional Description Quad SPDT USB Switch 2. General The TC7USB3212WBG is a 2 differential channel, 1-2 multiplexer/demultiplexer

More information

SMP1345 Series: Very Low Capacitance, Plastic Packaged Silicon PIN Diodes

SMP1345 Series: Very Low Capacitance, Plastic Packaged Silicon PIN Diodes DATA SHEET SMP1345 Series: Very Low Capacitance, Plastic Packaged Silicon PIN Diodes Applications High isolation LNBs, WLANs, and wireless switches Features Very low insertion loss: 0.4 db Capacitance:

More information

DATA SHEET NE68018 / 2SC5013 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 4-PIN SUPER MINIMOLD

DATA SHEET NE68018 / 2SC5013 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 4-PIN SUPER MINIMOLD FEATURES DATA SHEET NPN SILICON RF TRANSISTOR NE688 / SC53 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION -PIN SUPER MINIMOLD High Gain Bandwidth Product (ft = GHz TYP.)

More information

TOSHIBA Original CMOS 16-Bit Microcontroller. TLCS-900/H Series TMP95C061BFG TMP95C061BDFG. Semiconductor Company

TOSHIBA Original CMOS 16-Bit Microcontroller. TLCS-900/H Series TMP95C061BFG TMP95C061BDFG. Semiconductor Company TOSHIBA Original CMOS 16-Bit Microcontroller TLCS-900/H Series TMP95C061BFG TMP95C061BDFG Semiconductor Company TMP95C061B Document Change Notification The purpose of this notification is to inform customers

More information

TC7USB40FT TC7USB40FT. 1. Functional Description. 2. General. 3. Features. 4. Packaging and Pin Assignment Rev.2.0. Dual SPDT USB Switch

TC7USB40FT TC7USB40FT. 1. Functional Description. 2. General. 3. Features. 4. Packaging and Pin Assignment Rev.2.0. Dual SPDT USB Switch CMOS Digital Integrated Circuits TC7USB40FT Silicon Monolithic TC7USB40FT 1. Functional Description Dual SPDT USB Switch 2. General The TC7USB40FT is high-speed CMOS dual 1-2 multiplexer/demultiplexer.

More information

DISCONTINUED PH5502B2NA1-E4. Preliminary. Data Sheet. Ambient Illuminance Sensor DESCRIPTION FEATURES APPLICATIONS. R08DS0038EJ0100 Rev.1.

DISCONTINUED PH5502B2NA1-E4. Preliminary. Data Sheet. Ambient Illuminance Sensor DESCRIPTION FEATURES APPLICATIONS. R08DS0038EJ0100 Rev.1. PH5502B2NA-E4 Ambient Illuminance Sensor DESCRIPTION Preliminary Data Sheet The PH5502B2NA-E4 is an ambient illuminance sensor with a photo diode and current amplifier. This product has spectral characteristics

More information

SKY , SKY LF: SP3T Switch for Bluetooth and b, g

SKY , SKY LF: SP3T Switch for Bluetooth and b, g DATA SHEET SKY325-349, SKY325-349LF: SP3T Switch for Bluetooth and 82.b, g Applications 82.b, g Bluetooth Zigbee TDMA/GSM/EDGE CDMA/WCDMA Other short-range wireless applications Simplified Block Diagram

More information

TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S20TU. Note.1 : The device is mounted on a ceramic board (25.4 mm x 25.4 mm x 0.

TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S20TU. Note.1 : The device is mounted on a ceramic board (25.4 mm x 25.4 mm x 0. TOSHIBA Transistor Silicon NPN Epitaxial Planar Type VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit: mm.±. FEATURES Low Noise Figure: NF =.5dB (typ.) (@ f=ghz) High Gain: Se = db (typ.)

More information

SKY LF: GHz SP3T Switch, 50 Ω Terminated

SKY LF: GHz SP3T Switch, 50 Ω Terminated DATA SHEET SKY13408-465LF: 1.0 6.0 GHz SP3T Switch, 50 Ω Terminated Applications WiMAX 802.16 Dual-band WLANs (802.11 a/b/g/n) LTE/4G systems WLAN 802.11a/c 5 GHz video distribution Features 50 Ω matched

More information

SAW components. SAW RF filter Short range devices. RF360 Europe GmbH A Qualcomm TDK Joint Venture. Date: September 15, 2017 Version: 2.

SAW components. SAW RF filter Short range devices. RF360 Europe GmbH A Qualcomm TDK Joint Venture. Date: September 15, 2017 Version: 2. A Qualcomm TDK Joint Venture Short range devices Series/type: Ordering code: B39921U410 Date: September 15, 2017 Version: 2.4 RF360 products mentioned within this document are offered by RF360 Europe GmbH

More information

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type RFM04U6P. VHF- and UHF-band Amplifier Applications Unit: mm

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type RFM04U6P. VHF- and UHF-band Amplifier Applications Unit: mm TOSHIBA Field Effect Transistor Silicon N Channel MOS Type VHF- and UHF-band Amplifier Applications Unit: mm (Note)The TOSHIBA products listed in this document are intended for high frequency Power Amplifier

More information

Part Number Order Number Package Marking Supplying Form G4Y

Part Number Order Number Package Marking Supplying Form G4Y GaAs INTEGRATED CIRCUIT PG2176T5N 50 TERMINATION TYPE HIGH POWER SPDT SWITCH FOR WiMAX DESCRIPTION The PG2176T5N is a GaAs MMIC 50 termination type high power SPDT (Single Pole Double Throw) switch which

More information

AA103-72/-72LF: 10 MHz GHz GaAs One-Bit Digital Attenuator (10 db LSB)

AA103-72/-72LF: 10 MHz GHz GaAs One-Bit Digital Attenuator (10 db LSB) DATA SHEET AA103-72/-72LF: 10 MHz - 2.5 GHz GaAs One-Bit Digital Attenuator (10 LSB) Applications Cellular radio Wireless data systems WLL gain level control circuits Features Attenuation: 10 Single, positive

More information

DATA SHEET SE5004L: 5 GHz, 26dBm Power Amplifier with Power Detector. Applications. Product Description. Features. Ordering Information

DATA SHEET SE5004L: 5 GHz, 26dBm Power Amplifier with Power Detector. Applications. Product Description. Features. Ordering Information Applications DSSS GHz WLAN (IEEE80.a) DSSS GHz WLAN (IEEE80.n) Access Points, PCMCIA, PC cards Features High output power amplifier - dbm at V External Analog Reference Voltage (V REF) for maximum flexibility

More information

TLP3341 TLP Applications. 2. General. 3. Features. 4. Packaging and Pin Configuration Rev.3.0

TLP3341 TLP Applications. 2. General. 3. Features. 4. Packaging and Pin Configuration Rev.3.0 Photocouplers Photorelay TLP3341 TLP3341 1. Applications High-Speed Memory Testers High-Speed Logic IC Testers Radio-Frequency Measuring Instruments ATE (Automatic Test Equipment) 2. General The TLP3341

More information

RFX8425: 2.4 GHz CMOS WLAN/Bluetooth Dual-Mode RFeIC with PA, LNA, and SP3T

RFX8425: 2.4 GHz CMOS WLAN/Bluetooth Dual-Mode RFeIC with PA, LNA, and SP3T DATA SHEET RFX8425: 2.4 GHz CMOS WLAN/Bluetooth Dual-Mode RFeIC with PA, LNA, and SP3T Applications Smartphones, feature phones. and MIDs with WLAN/Bluetooth WLAN/Bluetooth platforms requiring shared antenna

More information

TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S113

TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S113 TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S3 VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit: mm FEATURES Low Noise Figure:NF=.5dB (typ.) (@ f=ghz) High Gain:

More information

SKY : 2.4 GHz Transmit/Receive Front-End Module

SKY : 2.4 GHz Transmit/Receive Front-End Module DATA SHEET SKY65337-11: 2.4 GHz Transmit/Receive Front-End Module Applications 2.4 GHz ISM band radios ZigBee FEMs IEEE 802.15.4 applications Features Transmit output power > +20 dbm Bidirectional path

More information

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4213

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4213 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4213 For Muting and Switching Applications Unit: mm High emitter-base voltage: V EBO = 25 V (min) High reverse h FE : Reverse h FE = 150 (typ.)

More information

SKY LF: GaAs SP2T Switch for Ultra Wideband (UWB) 3 8 GHz

SKY LF: GaAs SP2T Switch for Ultra Wideband (UWB) 3 8 GHz DATA SHEET SKY1398-36LF: GaAs SPT Switch for Ultra Wideband (UWB) 3 8 GHz Features Positive voltage control (/1.8 V to /3.3 V) High isolation 5 for BG1, 5 for BG3 Low loss.7 typical for BG1,.9 for BG3

More information

Applications. Product Description. Features. Ordering Information. Functional Block Diagram

Applications. Product Description. Features. Ordering Information. Functional Block Diagram Applications DSSS 5 GHz WLAN (IEEE802.11a) Access Points, PCMCIA, PC cards Features High output power amplifier 19.5dBm Only 1 external component required Integrated power amplifier enable pin (VEN) Buffered,

More information

SKY LF: 20 MHz-2.7 GHz GaAs SPDT Switch

SKY LF: 20 MHz-2.7 GHz GaAs SPDT Switch DATA SHEET SKY13270-92LF: 20 MHz-2.7 GHz GaAs SPDT Switch Applications Transmit/receive and diversity switching over 3 W Analog and digital wireless communication systems including cellular, GSM, and UMTS

More information

SKY LF: 2.2 to 2.8 GHz Two-Way, 0 Degrees Power Divider

SKY LF: 2.2 to 2.8 GHz Two-Way, 0 Degrees Power Divider DATA SHEET SKY1646-381LF: 2.2 to 2.8 GHz Two-Way, Degrees Power Divider Applications TD-LTE systems Satellite communications 2.4 GHz ISM band PORT1 Features Low insertion loss:.3 db @ 2.5 GHz High isolation:

More information

TQM EVB B7 BAW Duplexer

TQM EVB B7 BAW Duplexer Applications LTE handsets, data cards & mobile routers Band 7 2500-2570 MHz Uplink 2620-2690 MHz Downlink 8 Pin 1.6 x 2.0 mm Package Product Features Highly Selective LowDrift BAW Duplexer Low Insertion

More information

SKY LF: 0.5 to 6.0 GHz SPDT Switch, 50 Ω Terminated

SKY LF: 0.5 to 6.0 GHz SPDT Switch, 50 Ω Terminated DATA SHEET SKY13348-374LF:.5 to 6. GHz SPDT Switch, 5 Ω Terminated Applications WiMAX 82.16 WLAN 82.11 a/b/g/n J1 J2 Features 5 Ω terminated RF outputs from.5 to 6. GHz Low insertion loss:.6 @ 2.5 GHz

More information

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type RFM12U7X

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type RFM12U7X TOSHIBA Field Effect Transistor Silicon N Channel MOS Type VHF- and UHF-band Amplifier Applications (Note)The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of

More information

SAW components. SAW duplexer Small cell & femtocell LTE band 5. RF360 Europe GmbH A Qualcomm TDK Joint Venture. Date: September 14, 2017 Version: 2.

SAW components. SAW duplexer Small cell & femtocell LTE band 5. RF360 Europe GmbH A Qualcomm TDK Joint Venture. Date: September 14, 2017 Version: 2. A Qualcomm TDK Joint Venture Small cell & femtocell LTE band 5 Series/type: Ordering code: B39881P810 Date: September 14, 2017 Version: 2.8 RF360 products mentioned within this document are offered by

More information

TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK mw

TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK mw TOSHIBA Field Effect Transistor Silicon N Channel Junction Type Audio Frequency Low Noise Amplifier Applications Unit: mm Including two devices in SM5 (super mini type with 5 leads.) High Y fs : Y fs =

More information

AS183-92/AS183-92LF: 300 khz-2.5 GHz phemt GaAs SPDT Switch

AS183-92/AS183-92LF: 300 khz-2.5 GHz phemt GaAs SPDT Switch DATA SHEET AS183-92/AS183-92LF: 300 khz-2.5 GHz phemt GaAs SPDT Switch Applications General purpose medium-power switches in telecommunication applications Transmit/receive switches in 802.11 b/g WLAN

More information

TOSHIBA CMOS Linear Integrated Circuit Silicon Monolithic TCR5SB15 ~ TCR5SB ma CMOS Low-Dropout Regulators (Point Regulators)

TOSHIBA CMOS Linear Integrated Circuit Silicon Monolithic TCR5SB15 ~ TCR5SB ma CMOS Low-Dropout Regulators (Point Regulators) TOSHIBA CMOS Linear Integrated Circuit Silicon Monolithic TCR5SB15 ~ TCR5SB5 ma CMOS Low-Dropout Regulators (Point Regulators) The TCR5SB15 to TCR5SB5 are CMOS general-purpose single-output voltage regulators

More information

SKY LF: GHz Two-Stage, High Linearity and High Gain Low-Noise Amplifier

SKY LF: GHz Two-Stage, High Linearity and High Gain Low-Noise Amplifier DATA SHEET SKY67107-306LF: 2.3-2.8 GHz Two-Stage, High Linearity and High Gain Low-Noise Amplifier Applications LTE cellular infrastructure and ISM band systems Ultra low-noise, high gain and high linearity

More information

RFX8050: CMOS 5 GHz WLAN ac RFeIC with PA, LNA, and SPDT

RFX8050: CMOS 5 GHz WLAN ac RFeIC with PA, LNA, and SPDT DATA SHEET RFX8050: CMOS 5 GHz WLAN 802.11ac RFeIC with PA, LNA, and SPDT Applications 802.11a/n/ac Smartphones LEN RXEN ANT Tablets/MIDs Gaming Notebook/netbook/ultrabooks Mobile/portable devices RX Consumer

More information

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2240

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2240 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2240 Low Noise Audio Amplifier Applications Unit: mm The 2SC2240 is a transistor for low frequency and low noise applications. This device

More information

SAW Components. SAW Duplexer. RF360 Europe GmbH. A Qualcomm TDK Joint Venture. LTE Band 7. Date: May 31, 2016 Version: 2.4

SAW Components. SAW Duplexer. RF360 Europe GmbH. A Qualcomm TDK Joint Venture. LTE Band 7. Date: May 31, 2016 Version: 2.4 RF360 Europe GmbH A Qualcomm TDK Joint Venture SAW Components LTE Band 7 Series/type: Ordering code: B39272P810 Date: May 31, 2016 Version: 2.4 RF360 products mentioned within this document are offered

More information

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK302

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK302 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type FM Tuner, VHF RF Amplifier Applications Unit: mm Low reverse transfer capacitance: C rss = 0.035 pf (typ.) Low noise figure: NF = 1.7dB (typ.)

More information

GaAs INTEGRATED CIRCUIT

GaAs INTEGRATED CIRCUIT DATA SHEET GaAs INTEGRATED CIRCUIT µpg29tb L-BAND HIGH POWER SPDT SWITCH DESCRIPTION The µpg29tb is an L-band SPDT (Single Pole Double Throw) GaAs FET switch which was developed for digital cellular or

More information

TLP3215. Measuring Instruments Logic IC Testers / Memory Testers Board Testers / Scanners. Features. Pin Configuration (Top View)

TLP3215. Measuring Instruments Logic IC Testers / Memory Testers Board Testers / Scanners. Features. Pin Configuration (Top View) TLP5 TOSHIBA PHOTOCOUPLER PHOTO RELAY TLP5 Measuring Instruments Logic IC Testers / Memory Testers Board Testers / Scanners. φ. Unit: mm The TOSHIBA TLP5 is an ultra-small photorelay suitable for surface-mount

More information

TC7SB3157CFU TC7SB3157CFU. 1. Functional Description. 2. General. 3. Features. 4. Packaging and Pin Assignment. 5. Marking Rev.4.

TC7SB3157CFU TC7SB3157CFU. 1. Functional Description. 2. General. 3. Features. 4. Packaging and Pin Assignment. 5. Marking Rev.4. CMOS Digital Integrated Circuits Silicon Monolithic TC7SB3157CFU TC7SB3157CFU 1. Functional Description Single 1-of-2 Multiplexer/Demultiplexer 2. General The TC7SB3157CFU is a high-speed CMOS single 1-of-2

More information

GaAs Integrated Circuit for L, S-Band SPDT Switch PHASE-OUT

GaAs Integrated Circuit for L, S-Band SPDT Switch PHASE-OUT Preliminary GaAs Integrated Circuit for L, S-Band SPDT Switch Data Sheet DESCRIPTION The is a GaAs MMIC for L, S-band SPDT (Single Pole Double Throw) switch which was developed for mobile phone and

More information

Old Company Name in Catalogs and Other Documents

Old Company Name in Catalogs and Other Documents To our customers, Old Company Name in Catalogs and Other Documents On April st,, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all

More information

SKY LF: 0.5 to 6.0 GHz SPDT Switch, 50 Ω Terminated

SKY LF: 0.5 to 6.0 GHz SPDT Switch, 50 Ω Terminated DATA SHEET SKY13370-374LF: 0.5 to 6.0 GHz SPDT Switch, 50 Ω Terminated Applications WiMAX 802.16 Dual-band WLANs (802.11 a/b/g/n) LTE/4G systems Features RF1 50 Ω 50 Ω RF2 50 Ω matched RF ports in all

More information

TOSHIBA CMOS Linear Integrated Circuit Silicon Monolithic TCR5SB15~TCR5SB ma CMOS Low-Dropout Regulators (Point Regulators)

TOSHIBA CMOS Linear Integrated Circuit Silicon Monolithic TCR5SB15~TCR5SB ma CMOS Low-Dropout Regulators (Point Regulators) TOSHIBA CMOS Linear Integrated Circuit Silicon Monolithic TCR5SB15~TCR5SB5 2 ma CMOS Low-Dropout Regulators (Point Regulators) TCR5SB15~TCR5SB5 The TCR5SB15 to TCR5SB5 are CMOS general-purpose single-output

More information

DISCRETE SEMICONDUCTORS DATA SHEET. book, halfpage MBD128. BGA2022 MMIC mixer Dec 04. Product specification Supersedes data of 2000 Jun 06

DISCRETE SEMICONDUCTORS DATA SHEET. book, halfpage MBD128. BGA2022 MMIC mixer Dec 04. Product specification Supersedes data of 2000 Jun 06 DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage MBD128 Supersedes data of 2000 Jun 0 2000 Dec 0 FEATURES PINNING Large frequency range: Cellular band (900 MHz) PCS band (1900 MHz) WLAN band (2. GHz)

More information