RF PIN Diodes - Dual, Common Cathode in SOT-323

Transcription

1 BAR64V-5W R PIN Diodes - Dual, Common Cathode in SOT-323 DESIGN SUPPORT TOOLS click logo to get started Models Available DESCRIPTION Characterized by low reverse capacitance the PIN diodes BAR64V-5W was designed for R signal switching and tuning. As a function of the forward bias current the forward resistance (R) can be adjusted over a wide range. A long carrier life time offers low signal distortion for signals over 1 MHz up to 3 GHz. Typical applications for these PIN diodes are switches and attenuators in wireless, mobile, and TV-systems EATURES High voltage current controlled R resistor Small diode capacitance Low series inductance Low forward resistance Improved performance due to two separate dice Base P/N-E3 - RoHS-compliant, commercial grade Material categorization: for definitions of compliance please see APPLICATIONS or frequencies up to 3 GHz R-signal tuning Signal attenuator and switches Mobile, wireless, and TV-applications MECHANICAL DATA Case: SOT-323 Weight: approx. 5.7 mg Packaging codes/options: 18/1K per 13" reel (8 mm tape), 1K/box 8/3K per 7" reel (8 mm tape), 15K/box PARTS TABLE PART ORDERING CODE TYPE MARKING CIRCUIT CONIGURATION REMARKS BAR64V-5W BAR64V-5W-E3-8 or BAR64V-5W-E3-18 DW5 Common cathode Tape and reel ABSOLUTE MAXIMUM RATINGS (T amb = 25 C, unless otherwise specified) PART TEST CONDITION SYMBOL VALUE UNIT Reverse voltage V R 1 V orward continuous current 1 ma THERMAL CHARACTERISTICS (T amb = 25 C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT Junction temperature T j 15 C Storage temperature range T stg -55 to +15 C Operating temperature range T op -55 to +125 C Rev. 1.6, 27-Apr-17 1 Document Number: or technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com ARE SUBJECT TO SPECIIC DISCLAIMERS, SET ORTH AT

2 f BAR64V-5W ELECTRICAL CHARACTERISTICS (T amb = 25 C, unless otherwise specified) PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT orward voltage = 5 ma V 1.1 V Reverse voltage = 1 μa V R 1 V Reverse current V R = 5 V I R.5 μa Diode capacitance f = 1 MHz, V R = V C D.5 p f = 1 MHz, V R = 1 V C D.37.5 p f = 1 MHz, V R = 2 V C D p f = 1 MHz, = 1 ma r f 1 2 Differential forward resistance f = 1 MHz, = 1 ma r f f = 1 MHz, = 1 ma r f Charge carrier lifetime = 1 ma, I R = 6 ma, i R = 3 ma t rr 1.8 μs Series inductance L S 1 nh TYPICAL CHARACTERISTICS (T amb = 25 C, unless otherwise specified) r - orward Resistance (Ω) f = 1 MHz I - orward Current (ma) ig. 1 - orward Resistance vs. orward Current I - orward Current (ma) V - orward Voltage (V) ig. 3 - orward Current vs. orward Voltage C - Diode Capacitance (p) D f = 1 MHz V - Reverse Voltage (V) R ig. 2 - Diode Capacitance vs. Reverse Voltage I - orward Current (ma) = 1 ma I R = 6 ma i R = 3 ma t rr - Reverse Recovery Time (ns) ig. 4 - Typical Charge Recovery Curve Rev. 1.6, 27-Apr-17 2 Document Number: or technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com ARE SUBJECT TO SPECIIC DISCLAIMERS, SET ORTH AT

3 BAR64V-5W S 21 ² - Insertion Loss (db) = 3mA = 1 ma =.5 ma = 1 ma = 1 ma f - requency (GHz) ig. 5 - Insertion Loss of One Diode Inserted in Series with 5 Strip Line S 12 ² - Isolation (db) S 21 ² = V R =, diode zero-biased f - requency ( GHz ) ig. 6 - Isolation of One Diode Inserted in Series with 5 Strip Line I P2 - Second Order Intercept Point (dbm) f = 1.8 GHz f =.9 GHz orward Current (ma) ig. 7 - Second Order Intercept Point for One Diode Inserted in 5 Strip Line Rev. 1.6, 27-Apr-17 3 Document Number: or technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com ARE SUBJECT TO SPECIIC DISCLAIMERS, SET ORTH AT

4 BAR64V-5W PACKAGE DIMENSIONS in millimeters (inches): SOT (.39).8 (.31) 2.2 (.87) 2. (.79).1 (.4). (.) foot print recommendation:.6 (.24).8 (.31).15 (.6).8 (.3) 1.1 (.43).8 (.31).46 (.18).26 (.1) 8.4 (.16).2 (.8).525 (.21) ref (.96) 2.15 (.85).65 (.26) typ 1.35 (.53) 1.15 (.45) 1.4 (.55) 1.2 (.47) Document no.: Rev. 1 - Date: 6. April (.26) 1.8 (.71) (.51) Rev. 1.6, 27-Apr-17 4 Document Number: or technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com ARE SUBJECT TO SPECIIC DISCLAIMERS, SET ORTH AT

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