Table of Contents. Volume 4 Number 4 October Land-Use, Albedo and Air Temperature Changes in the Hula Valley (Israel) during
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3 Open Journal of Modern Hydrology, 2014, 4, Published Online October 2014 in SciRes. Table of Contents Volume 4 Number 4 October 2014 Land-Use, Albedo and Air Temperature Changes in the Hula Valley (Israel) during M. Gophen A Monte Carlo-Based Approach for Groundwater Chemistry Inverse Modeling W. W. McNab Jr Seasonal and Spatial Distribution of N & P Substances in the Hula Valley (Israel) Subterranean M. Gophen, M. Meron, V. Orlov-Levin, Y. Tsipris Development of Upstream Data-Input Models to Estimate Downstream Peak Flow in Two Mediterranean River Basins of Chile R. Pizarro-Tapia, R. Valdés-Pineda, C. Olivares, P. A. González. 132 Impact of Monthly Curve Number on Daily Runoff Estimation for Ozat Catchment in India M. Gundalia, M. Dholakia An Integrated Approach to Hydrographic Surveying of Large Reservoirs Application to Tarbela Reservoir in Pakistan S. Munir, M. Armaghan, A. Babrus Environmental Flow Assessment Using Water-Sediment Approach at the Sekampung River, Indonesia E. P. Wahono, D. Legono, Istiarto, B. Yulistiyanto Review of Soil Water Retention Characteristic (SWRC) Models between Saturation and Oven Dryness V. K. Too, C. T. Omuto, E. K. Biamah, J. P. Obiero The figure on the front cover is from the article published in Open Journal of Modern Hydrology, 2014, Vol. 4, No. 4, pp by Sarfraz Munir, Muhammad Armaghan and Arsalan Babrus.
4 Open Journal of Modern Hydrology (OJMH) Journal Information SUBSCRIPTIONS The Open Journal of Modern Hydrology (Online at Scientific Research Publishing, is published quarterly by Scientific Research Publishing, Inc., USA. Subscription rates: Print: $69 per issue. To subscribe, please contact Journals Subscriptions Department, SERVICES Advertisements Advertisement Sales Department, Reprints (minimum quantity 100 copies) Reprints Co-ordinator, Scientific Research Publishing, Inc., USA. COPYRIGHT COPYRIGHT AND REUSE RIGHTS FOR THE FRONT MATTER OF THE JOURNAL: Copyright 2014 by Scientific Research Publishing Inc. This work is licensed under the Creative Commons Attribution International License (CC BY). COPYRIGHT FOR INDIVIDUAL PAPERS OF THE JOURNAL: Copyright 2014 by author(s) and Scientific Research Publishing Inc. REUSE RIGHTS FOR INDIVIDUAL PAPERS: Note: At SCIRP authors can choose between CC BY and CC BY-NC. Please consult each paper for its reuse rights. DISCLAIMER OF LIABILITY Statements and opinions expressed in the articles and communications are those of the individual contributors and not the statements and opinion of Scientific Research Publishing, Inc. We assume no responsibility or liability for any damage or injury to persons or property arising out of the use of any materials, instructions, methods or ideas contained herein. We expressly disclaim any implied warranties of merchantability or fitness for a particular purpose. If expert assistance is required, the services of a competent professional person should be sought. PRODUCTION INFORMATION For manuscripts that have been accepted for publication, please contact: ojmh@scirp.org
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P-Channel 8 V (D-S) MOSFET
SPICE Device Model Si235CDS P-Channel 8 V (D-S) MOSFET DESCRIPTION The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted
BUX87. High voltage NPN power transistor. Features. Applications. Description
High voltage NPN power transistor Features High voltage capability (450 V V CEO ) Minimum lot-to-lot spread for reliable operation High DC current gain Applications Flyback and forward single transistor
STB High voltage fast-switching NPN power transistor. Features. Applications. Description
High voltage fast-switching NPN power transistor Features Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speed Through hole TO-262 (I 2 PAK) power
N-Channel 25 V (D-S) MOSFET
N-Channel 25 V (D-S) MOSFET DESCRIPTION The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the
STEVAL-ISQ010V1. High-side current-sense amplifier demonstration board based on the TSC102. Features. Description
High-side current-sense amplifier demonstration board based on the TSC102 Data brief Features Independent supply and input common-mode voltages Wide common-mode operating range: 2.8 V to 30 V Wide common-mode
EVAL-RHF310V1. EVAL-RHF310V1 evaluation board. Features. Description
evaluation board Data brief Features Mounted Engineering Model RHF310K1: Rad-hard, 120 MHz, operational amplifier (see RHF310 datasheet for further information) Mounted components (ready-to-use) Material:
STN2580. High voltage fast switching NPN power transistor. Features. Applications. Description. High voltage capability Fast switching speed
High voltage fast switching NPN power transistor Datasheet production data Features High voltage capability Fast switching speed Applications Lighting Switch mode power supply Description This device is
2STC4468. High power NPN epitaxial planar bipolar transistor. Features. Application. Description
High power NPN epitaxial planar bipolar transistor Features High breakdown voltage V CEO = 140 V Complementary to 2STA1695 Typical f t = 20 MHz Fully characterized at 125 o C Application Audio power amplifier
BD235 BD237. Low voltage NPN power transistors. Features. Applications. Description. Low saturation voltage NPN transistors
BD235 BD237 Low voltage NPN power transistors Features Low saturation voltage NPN transistors Applications Audio, power linear and switching applications Description The devices are manufactured in Planar
Obsolete Product(s) - Obsolete Product(s)
High Gain Low Voltage PNP Power Transistor General features Very low Collector to Emitter saturation voltage D.C. Current gain, h FE >100 1.5 A continuous collector current In compliance with the 2002/93/EC
2STX2220. High Gain Low Voltage PNP Power Transistor. General features. Description. Internal schematic diagram. Applications.
High Gain Low Voltage PNP Power Transistor General features Very low Collector to Emitter saturation voltage D.C. Current gain, h FE >100 1.5 A continuous collector current In compliance with the 2002/93/EC
BD241A BD241C. NPN power transistors. Features. Applications. Description. NPN transistors. Audio, general purpose switching and amplifier transistors
BD241A BD241C NPN power transistors Features. NPN transistors Applications Audio, general purpose switching and amplifier transistors Description The devices are manufactured in Planar technology with
D44H8 - D44H11 D45H8 - D45H11
D44H8 - D44H11 D45H8 - D45H11 Complementary power transistors Features. Low collector-emitter saturation voltage Fast switching speed TAB Applications Power amplifier Switching circuits 1 2 3 Description
Obsolete Product(s) - Obsolete Product(s)
Low voltage fast-switching PNP power transistor Features Very low collector-emitter saturation voltage High current gain characteristic Fast switching speed 3 Miniature SOT-23 plastic package for surface
2STR2215. Low voltage fast-switching PNP power transistor. Features. Applications. Description
Low voltage fast-switching PNP power transistor Features Very low collector-emitter saturation voltage High current gain characteristic Fast switching speed Miniature SOT-23 plastic package for surface
STN9260. High voltage fast-switching PNP power transistor. Features. Applications. Description. High voltage capability Fast switching speed
High voltage fast-switching PNP power transistor Features High voltage capability Fast switching speed Applications Lighting Switch mode power supply Description This device is a high voltage fast-switching
STD1802T4-A. Low voltage fast-switching NPN power transistor. Features. Description. Applications
Low voltage fast-switching NPN power transistor Features This device is qualified for automotive application Very low collector to emitter saturation voltage High current gain characteristic Fast-switching
2STA1943. High power PNP epitaxial planar bipolar transistor. Features. Application. Description
High power PNP epitaxial planar bipolar transistor Features High breakdown voltage V CEO > -230V Complementary to 2STC5200 Fast-switching speed Typical f T = 30 MHz Application Audio power amplifier Description
BD533 BD535 BD537 BD534 BD536
BD533 BD535 BD537 BD534 BD536 Complementary power transistors Features. BD533, BD535, and BD537 are NPN transistors Description The devices are manufactured in Planar technology with Base Island layout.
Surface Mount Ceramic Chip Antennas for 2.4 GHz
Surface Mount Ceramic Chip Antennas for 2.4 GHz chip antenna The VJ5106W240 series are small form-factor, high-performance chip-antennas designed to be used in wireless, bluetooth and ISM band 2.4 GHz.
2STA1695. High power PNP epitaxial planar bipolar transistor. Features. Applications. Description
High power PNP epitaxial planar bipolar transistor Features High breakdown voltage V CEO = -140 V Complementary to 2STC4468 Typical f t = 20 MHz Fully characterized at 125 C Applications 1 2 3 Audio power
Obsolete Product(s) - Obsolete Product(s)
High gain Low Voltage PNP power transistor Features Very low Collector to Emitter saturation voltage D.C. Current gain, h FE >100 1.5 A continuous collector current Applications Power management in portable
STN High voltage fast-switching PNP power transistor. Features. Application. Description. High voltage capability Very high switching speed
High voltage fast-switching PNP power transistor Features High voltage capability Very high switching speed 4 Application Electronics ballasts for fluorescent lighting Description 1 2 SOT-223 3 The device
2STD1665. Low voltage fast-switching NPN power transistor. Features. Applications. Description
Low voltage fast-switching NPN power transistor Features Very low collector to emitter saturation voltage High current gain characteristic TAB Fast-switching speed Applications Voltage regulators High
Order codes Marking Polarity Package Packaging. MJD44H11T4 MJD44H11 NPN DPAK Tape and reel MJD45H11T4 MJD45H11 PNP DPAK Tape and reel
MJD44H11 MJD45H11 Complementary power transistors Features. Low collector-emitter saturation voltage Fast switching speed Surface-mounting TO-252 (DPAK) power package in tape and reel (suffix "T4") Applications
Hyperfast Rectifier, 2 x 5 A FRED Pt
Hyperfast Rectifier, 2 x 5 A FRED Pt VS-CSH02HM3 K TO-277A (SMPC) 2 K Cathode Anode Anode 2 FEATURES Hyperfast recovery time, reduced Q rr, and soft recovery 75 C maximum operating junction temperature
BD243C BD244C. Complementary power transistors. Features. Applications. Description. Complementary NPN-PNP devices. Power linear and switching TO-220
BD243C BD244C Complementary power transistors Features. Complementary NPN-PNP devices Applications Power linear and switching Description The device is manufactured in Planar technology with Base Island
Hyper Fast Rectifier, 2 x 2 A FRED Pt
Hyper Fast Rectifier, 2 x 2 A FRED Pt VS-4CSH02HM3 K SMPC (TO-277A) 2 K Cathode Anode Anode 2 FEATURES Hyper fast recovery time, reduced Q rr, and soft recovery 75 C maximum operating junction temperature
3STL2540. Low voltage high performance PNP power transistor. Features. Applications. Description
Low voltage high performance PNP power transistor Datasheet production data Features Very low collector-emitter saturation voltage High current gain characteristic Small, thin, leadless SMD plastic package
Obsolete Product(s) - Obsolete Product(s)
2N6284 2N6287 Complementary power Darlington transistors Features Complementary transistors in monolithic Darlington configuration Integrated collector-emitter antiparallel diode Applications Audio power
R 1 typ. = 15 kω. Order codes Marking Polarity Package Packaging. 2N6036 2N6036 NPN SOT-32 Tube 2N6039 2N6039 PNP SOT-32 Tube
2N6036 2N6039 Complementary power Darlington transistors Features. Good h FE linearity High f T frequency Monolithic Darlington configuration with integrated antiparallel collector-emitter diode Applications
Hyperfast Rectifier, 16 A FRED Pt
Hyperfast Rectifier, 6 A FRED Pt 2 K Top View Bottom View SMPD (TO-263AC) K Anode Cathode Anode 2 FEATURES Hyperfast recovery time, reduced Q rr, and soft recovery 75 C maximum operating junction temperature
2STC5242. High power NPN epitaxial planar bipolar transistor. Features. Application. Description
2STC5242 High power NPN epitaxial planar bipolar transistor Features High breakdown voltage V CEO = 230 V Complementary to 2STA1962 Fast-switching speed Typical f T = 30 MHz Application Audio power amplifier
Aluminum Electrolytic Capacitors Axial High Temperature, High Ripple Current
Aluminum Electrolytic Capacitors Axial High Temperature, High Ripple Current smaller 9 AHT-DIN 8 AHT lower dimensions higher ripple Fig. 25 C 38 AML QUICK REFERENCE DATA DESCRIPTION VALUE Nominal case
Hyper Fast Rectifier, 2 x 3 A FRED Pt
Hyper Fast Rectifier, 2 x 3 A FRED Pt 8 7 6 5 FlatPAK 5 x 6 2 3 4 FEATURES Hyper fast recovery time, reduced Q rr, and soft recovery 75 C maximum operating junction temperature Low forward voltage drop
STC04IE170HV. Emitter switched bipolar transistor ESBT 1700V - 4A W. General features. Internal schematic diagrams. Description.
Emitter switched bipolar transistor ESBT 1700V - 4A - 0.17 W General features Table 1. General features V CS(ON) I C R CS(ON) 0.7V 4A 0.17Ω High voltage / high current cascode configuration Low equivalent
Single Phase Bridge Rectifier, 2 A
Single Phase Bridge Rectifier, 2 A FEATURES Suitable for printed circuit board mounting Compact construction High surge current capability Material categorization: for definitions of compliance please
STD840DN40. Dual NPN high voltage transistors in a single package. Features. Applications. Description
Dual NPN high voltage transistors in a single package Datasheet production data Features Low V CE(sat) Simplified circuit design Reduced component count Fast switching speed Applications Compact fluorescent
Obsolete Product(s) - Obsolete Product(s)
High power PNP epitaxial planar bipolar transistor Features High breakdown voltage V CEO = -120 V Complementary to 2STC4467 Fast-switching speed Typical f t = 20 MHz Fully characterized at 125 o C Applications
2STR SOT-23 Tape and reel 2STR1230G 130G SOT-23 Tape and reel
Low voltage fast-switching NPN power transistor Features Very low collector-emitter saturation voltage High current gain characteristic Fast switching speed Miniature SOT-23 plastic package for surface
Hyperfast Rectifier, 2 A FRED Pt
Hyperfast Rectifier, 2 A FRED Pt VS-2EFH02HM3 DO-29AB (SMF) Cathode Anode FEATURES Hyperfast recovery time, reduced Q rr, and soft recovery 75 C maximum operating junction temperature Specified for output
2STN2540. Low voltage fast-switching PNP power bipolar transistor. Features. Applications. Description
2STN2540 Low voltage fast-switching PNP power bipolar transistor Features Very low collector-emitter saturation voltage High current gain characteristic Fast switching speed Surface mounting device in
Obsolete Product(s) - Obsolete Product(s)
High voltage fast-switching NPN power transistor Features High voltage capability Minimum lot-to-lot spread for reliable operation ery high switching speed Applications Electronic ballast for fluorescent
Hyperfast Rectifier, 1 A FRED Pt
Hyperfast Rectifier, A FRED Pt VS-EMH0HM3 FEATURES Hyperfast recovery time, reduced Q rr, and soft recovery 75 C maximum operating junction temperature Specified for output and snubber operation Low forward
Hyperfast Rectifier, 2 x 3 A FRED Pt
Hyperfast Rectifier, 2 x 3 A FRED Pt VS-6CSH02HM3 K SMPC (TO-277A) 2 K Cathode Anode Anode 2 FEATURES Hyperfast recovery time, reduced Q rr, and soft recovery 75 C maximum operating junction temperature
Ultrafast Rectifier, 16 A FRED Pt
Ultrafast Rectifier, 6 A FRED Pt 2 K Top View Bottom View K Anode Cathode Anode 2 FEATURES Ultrafast recovery time, reduced Q rr, and soft recovery 75 C maximum operating junction temperature For PFC CRM,
2STC4468. High power NPN epitaxial planar bipolar transistor. Features. Application. Description
High power NPN epitaxial planar bipolar transistor Features High breakdown voltage V CEO = 140 V Complementary to 2STA1695 Typical f t = 20 MHz Fully characterized at 125 C Application 1 2 3 Audio power
Dual Common Cathode Ultrafast Plastic Rectifier
Dual Common Cathode Ultrafast Plastic Rectifier TO-2AB UGE8xCT PIN PIN 2 3 2 FEATURES Power pack Glass passivated pellet chip junction Ultrafast recovery time Low switching losses, high efficiency Low
Ultrafast Soft Recovery Diode, 150 A FRED Pt
Ultrafast Soft Recovery Diode, 50 A FRED Pt PowerTab Cathode Anode FEATURES Ultrafast recovery time 75 C max. operating junction temperature Screw mounting only AEC-Q0 qualified PowerTab package Material
Ultrafast Rectifier, 1 A FRED Pt
Ultrafast Rectifier, 1 A FRED Pt DO-219AB (SMF) Cathode Anode FEATURES Ultrafast recovery time, reduced Q rr, and soft recovery 175 C maximum operating junction temperature For PCF CRM, snubber operation
2STD1665. Low voltage fast-switching NPN power transistor. Features. Applications. Description
Low voltage fast-switching NPN power transistor Features Very low collector to emitter saturation volatage High current gain characteristic Fast-switching speed Through-hole IPAK (TO-251) power package
Insulated Ultrafast Rectifier Module, 210 A
Insulated Ultrafast Rectifier Module, 2 A SOT-227 1 4 2 3 FEATURES Two fully independent diodes Fully insulated package Ultrafast, soft reverse recovery, with high operation junction temperature (T J max.
BUL38D. High voltage fast-switching NPN power transistor. Features. Applications. Description
High voltage fast-switching NPN power transistor Features High voltage capability Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speed High ruggedness
Ultrafast Rectifier, 2 x 8 A FRED Pt
Ultrafast Rectifier, 2 x 8 A FRED Pt 2 esmp Series K Top View Bottom View SMPD (TO-263AC) K Anode Cathode Anode 2 FEATURES Ultrafast recovery time, reduced Q rr, and soft recovery 75 C maximum operating
ST High voltage fast-switching NPN power transistor. Features. Applications. Description
High voltage fast-switching NPN power transistor Features DC current gain classification High voltage capability Low spread of dynamic parameters ery high switching speed TAB Applications Electronic ballast
STGE200NB60S. N-channel 150A - 600V - ISOTOP Low drop PowerMESH IGBT. General features. Description. Internal schematic diagram.
N-channel 150A - 600V - ISOTOP Low drop PowerMESH IGBT General features TYPE V CES V CE(sat) (typ.) I C T C 600V 1.2V 1.3V 150A 200A 100 C 25 C High input impedance (voltage driven) Low on-voltage drop
2STD1360 2STF1360-2STN1360
2STD1360 2STF1360-2STN1360 Low voltage fast-switching NPN power transistors Features Very low collector-emitter saturation voltage High current gain characteristic Fast-switching speed 4 1 2 3 4 1 3 2
Insulated Ultrafast Rectifier Module, 210 A
Insulated Ultrafast Rectifier Module, 2 A SOT-227 4 2 3 FEATURES Two fully independent diodes Fully insulated package Ultrafast, soft reverse recovery, with high operation junction temperature (T J max.
Hyperfast Rectifier, 2 A FRED Pt
Hyperfast Rectifier, 2 A FRED Pt VS-2EJH02HM3 Top View SlimSMA (DO-22AC) Cathode esmp Series DESIGN SUPPORT TOOLS Models Available Bottom View PRIMARY CHARACTERISTICS Anode click logo to get started I
Hyperfast Rectifier, 3 A FRED Pt
Hyperfast Rectifier, 3 A FRED Pt VS-3EJH0HM3 Top View SlimSMA (DO-22AC) Cathode esmp Series DESIGN SUPPORT TOOLS Models Available Bottom View PRIMARY CHARACTERISTICS Anode click logo to get started I F(AV)
STN9360. High voltage fast-switching PNP power transistor. Features. Applications. Description. High voltage capability Fast switching speed
High voltage fast-switching PNP power transistor Datasheet production data Features High voltage capability Fast switching speed 4 Applications Lighting Switch mode power supply Description 2 SOT-223 3
Aluminum Electrolytic Capacitors Power Ultra High Ripple Current Snap-In for Solar
Aluminum Electrolytic Capacitors Power Ultra High Ripple Current Snap-In for Solar FEATURES Long useful life: 6000 h at +105 C Specified for 500 V, 50 C operation High ripple current capability High reliability
ST13003D-K High voltage fast-switching NPN power transistor Features Applications Description
High voltage fast-switching NPN power transistor Features High voltage capability Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation ery high switching speed Integrated antiparallel
BUL743. High voltage fast-switching NPN power transistor. Features. Applications. Description
High voltage fast-switching NPN power transistor Features Low spread of dynamic parameters High voltage capability Minimum lot-to-lot spread for reliable operation Very high switching speed Applications
BUX98A. High power NPN transistor. Features. Applications. Description. High voltage capability High current capability Fast switching speed
High power NPN transistor Features High voltage capability High current capability Fast switching speed Applications High frequency and efficency converters Linear and switching industrial equipment Description
R 1 typ. = 15 kω. Order codes Marking Polarity Package Packaging. STX112-AP X112 NPN TO92-AP Ammopack STX117-AP X117 PNP TO92-AP Ammopack
STX112 STX117 Complementary power Darlington transistors Features. Good h FE linearity High f T frequency Monolithic Darlington configuration with integrated antiparallel collector-emitter diode Application
Hyperfast Rectifier, 4 A FRED Pt
Hyperfast Rectifier, 4 A FRED Pt K SMPC (TO-277A) 2 K Cathode Anode Anode 2 FEATURES Hyperfast recovery time, reduced Q rr, and soft recovery 75 C maximum operating junction temperature Specified for output
Dual Common-Cathode Ultrafast Recovery Rectifier
New Product UH0FCT& UHB0FCT Dual Common-Cathode Ultrafast Recovery Rectifier FEATURES Oxide planar chip junction TO-0AB TO-63AB Ultrafast recovery times Soft recovery characteristics Low switching losses,
Obsolete Product(s) - Obsolete Product(s)
High power PNP epitaxial planar bipolar transistor Features High breakdown voltage V CEO = -250 V Complementary to 2STC5949 Typical f t = 25 MHz Fully characterized at 125 o C Application Audio power amplifier
STC03DE170HP. Hybrid emitter switched bipolar transistor ESBT 1700V - 3A W. Features. Applications. Description.
Hybrid emitter switched bipolar transistor ESBT 1700V - 3A - 0.33 W Features V CS(ON) I C R CS(ON) 1 V 3 A 0.33 Ω Low equivalent on resistance Very fast-switch, up to 150 khz Squared RBSOA, up to 1700V
Hyperfast Rectifier, 6 A FRED Pt
Hyperfast Rectifier, 6 A FRED Pt K SMPC (TO-277A) 2 K Cathode Anode Anode 2 FEATURES Hyperfast recovery time, reduced Q rr, and soft recovery 75 C maximum operating junction temperature Specified for output
Hyper Fast Rectifier, 2 x 4 A FRED Pt
Hyper Fast Rectifier, 2 x 4 A FRED Pt K SMPC (TO-277A) 2 K Cathode Anode Anode 2 FEATURES Hyper fast recovery time, reduced Q rr, and soft recovery 75 C maximum operating junction temperature Specified
MJD122 MJD127 Complementary power Darlington transistors Features Applications Description
MJD122 MJD127 Complementary power Darlington transistors Features Low collector-emitter saturation voltage Integrated antiparallel collector-emitter diode Applications General purpose linear and switching
Obsolete Product(s) - Obsolete Product(s)
TIP33C Complementary power transistors Features. Low collector-emitter saturation voltage Complementary NPN - PNP transistors Applications General purpose Description The devices are manufactured in epitaxial-base
Dual Common Cathode Ultrafast Rectifier
UGEBCT, UGECCT, UGEDCT Dual Common Cathode Ultrafast Rectifier PIN PIN 3 UGExCT PIN 2 CASE PRIMARY CHARACTERISTICS 2 3 I F(AV) 2 x 5.0 A V RRM 0 V, 50 V, 200 V I FSM 55 A t rr 25 ns V F 0.895 V T J max.
SGSD100 SGSD200. Complementary power Darlington transistors. Features. Applications. Description
SGSD100 SGSD200 Complementary power Darlington transistors Features Complementary NPN - PNP transistors Monolithic Darlington configuration Applications Audio power amplifier DC-AC converter Easy driver
STGW38IH130D, STGWT38IH130D
STGW38IH130D, STGWT38IH130D 33 A - 1300 V - very fast IGBT Datasheet production data Features Low saturation voltage High current capability Low switching loss Low static and peak forward voltage drop
Obsolete Product(s) - Obsolete Product(s)
STGW38IH130D, STGWT38IH130D 33 A - 1300 V - very fast IGBT Datasheet production data Features Low saturation voltage High current capability Low switching loss Low static and peak forward voltage drop
Insulated Ultrafast Rectifier Module, 230 A
Insulated Ultrafast Rectifier Module, 23 A SOT-227 PRIMARY CHARACTERISTICS V R 6 V I F(AV) per module at T C = 88 C 23 A t rr 43 ns Type Modules - diode FRED Pt Package SOT-227 FEATURES Two fully independent
STX13005G-AP. High voltage fast-switching NPN power transistor. Features. Applications. Description
STX13005 High voltage fast-switching NPN power transistor Features High voltage capability Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speed Applications
BUL39D. High voltage fast-switching NPN power transistor. Features. Application. Description
High voltage fast-switching NPN power transistor Features Integrated antiparallel collector-emitter diode High voltage capability Low spread of dynamic parameters Minimum lot-to-lot spread for reliable
Order codes Marking Package Packaging
STX13003 High voltage fast-switching NPN power transistor Features High voltage capability Very high switching speed Applications Compact fluorescent lamps (CFLs) SMPS for battery charger Description The
STL128D. High voltage fast-switching NPN power transistor. Features. Applications. Description
High voltage fast-switching NPN power transistor Features High voltage capability Low spread of dynamic parameters Very high switching speed Integrated antiparallel collector-emitter diode TAB Applications
Ultrafast Rectifier, 2 x 30 A FRED Pt
Ultrafast Rectifier, x 3 A FRED Pt 3 TO-47 long lead 3-pins PRODUCT SUMMARY Anode Base common cathode Common cathode Package TO-47 long lead 3-pins I F(AV) x 3 A V R 6 V V F at I F.75 V t rr typ. 6 ns
Insulated Ultrafast Rectifier Module, 280 A
Insulated Ultrafast Rectifier Module, 8 A SOT-7 PRIMARY CHARACTERISTICS V R 4 V I F(AV) per module at T C = 9 C 8 A t rr 4 ns Type Modules - diode FRED Pt Package SOT-7 FEATURES Two fully independent diodes
BULB7216 BUL7216. High voltage fast-switching NPN power transistor. Features. Applications. Description
BULB7216 BUL7216 High voltage fast-switching NPN power transistor Features Low spread of dynamic parameters High voltage capability Minimum lot-to-lot spread for reliable operation Very high switching
Dual N-Channel 30 V (D-S) MOSFET with Schottky Diode
SPICE Device Model SiR77DP Dual N-Channel 3 V (D-S) MOSFET with Schottky Diode DESCRIPTION The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The
Order codes Marking Package Packaging 2STF SOT-89 2STN2550 N2550 SOT-223. November 2008 Rev 1 1/8
2STF2550 2STN2550 Low voltage high performance PNP power transistors Preliminary Data Features Very low collector-emitter saturation voltage High current gain characteristic Fast switching speed Surface
Capacitor protection relay
Capacitor Protection Relay FEATURES Capacitor unbalance protection Line current unbalance protection Overvoltage protection Overheating protection Ground fault protection Overcurrent protection Undercurrent
2ST2121. High power PNP epitaxial planar bipolar transistor. Features. Applications. Description 1 2 TO-3
High power PNP epitaxial planar bipolar transistor Features High breakdown voltage V CEO = -250 V Complementary to 2ST5949 Typical f t = 25 MHz Fully characterized at 125 o C Applications Audio power amplifier
STX616. High voltage NPN power transistor. Features. Applications. Description
STX616 High voltage NPN power transistor Features High voltage capability High DC current gain Minimum lot-to-lot spread for reliable operation Applications Switching mode power supply Battery charger
Aluminum Electrolytic Capacitors Power Miniaturized General Purpose - Snap-In
Aluminum Electrolytic Capacitors Power Miniaturized General Purpose - Snap-In FEATURES Useful life: 2000 h at +105 C, > 5000 h at +85 C Voltage range from 16 V to 100 V Polarized aluminum electrolytic
Insulated Gen 2 Schottky Rectifier Module, 300 A
VS-QA3FA17 Insulated Gen 2 Schottky Rectifier Module, 3 A PRIMARY CHARACTERISTICS I F(AV) per module at T C = 132 C V R V FM at A, T C = 25 C Package Circuit configuration SOT-227 3 A 17 V.79 V SOT-227