Competitive Strategy. Supply Chain Strategy. Supply Chain Structure. Drivers for Supply Chain Performance

Size: px
Start display at page:

Download "Competitive Strategy. Supply Chain Strategy. Supply Chain Structure. Drivers for Supply Chain Performance"

Transcription

1 Competitive Strategy Supply Chain Strategy Supply Chain Structure Efficiency Responsiveness Facility Transportation Inventory Information Drivers for Supply Chain Performance

2 Journal Editorial Board ISSN Print: ISSN Online: Editors-in-Chief Dr. Lucas M. Bernard Prof. Willi Semmler The City University of New York, USA New School University, USA Executive Editor in Chief Dr. Gang Ke Sinophere Capital Group, Limited, China Editorial Board Prof. Sung C. Bae Prof. María P. García-Miguélez Dr. Walid Hichri Prof. Zhimin Huang Prof. Gyungho Lee Dr. Patrick L. Leoni Prof. Yingzhao Li Prof. Hans Löfsten Prof. Paola Modesti Prof. Choon-Geol Moon Prof. Liang Peng Prof. Djordje Popov Prof. Dilip Kumar Pratihar Dr. Jitendra R. Raol Dr. Tarek H. Selim Dr. Phanindra V. Wunnava Prof. Makoto Yano Dr. Mei Po Yip Bowling Green State University, USA University of León, Spain University of Lyon 2, France Adelphi University, USA Korea University, Korea (South) Euromed Management, France South China University, China Chalmers University of Technology, Sweden Parma University, Italy Hanyang University, Korea (South) Georgia Institute of Technology, USA University of Novi Sad, Serbia Illinois Institute of Technology, USA M S Ramaiah Institute of Technology, India American University in Cairo, Egypt Middlebury College, USA Kyoto University, Japan University of Washington, USA Editorial Assistant Tian Huang Scientific Research Publishing, USA

3 Technology and Investment, 2011, 2, Published Online August 2011 in SciRes ( TABLE OF CONTENTS Volume 2 Number 3 August 2011 Literature Analysis of Innovation Diffusion Y. Li, M. Q. Sui 155 Effects of Indigenous Innovation Policy on the S & T Outputs in China Evidence from the Higher Education System H. Meng 163 Do Newly Oligopolistic Reaction and Host Technology Resources Matter for MNC s Location? J.-L. Mucchielli, P. Yu 171 Analysis on the Mindbugs in Information Technology Service Management Project Implementation J. P. Wan, D. Wan 184 Exterior Sourcing and Technology Distinctness as Indicators for Radical Innovations: Evidence from Patents in Information Technology Industry A. Datta 193 A Note on Factor Prices and Technical Progress C.-G. Melén 202 Optimization of Supply Chain Planning with Considering Defective Rates of Products in Each Echelon B. Elahi, Y. Pakzad-Jafarabadi, L. Etaati, S.-M. Seyedhosseini 211 Banking Firm, Risk of Investment and Derivatives U. Broll, W.-K. Wong, M. J. Wu. 222 The figure on the front cover is from the article published in the Technology and Investment, 2011, Vol. 2, No. 3, pp by Behin Elahi, Yaser Pakzad-Jafarabadi, Leila Etaati and Seyed-Mohammad Seyedhosseini. Copyright 2011 SciRes. TI

4 Technology and Investment (TI) Journal Information SUBSCRIPTIONS The Technology and Investment (Online at Scientific Research Publishing, is published quarterly by Scientific Research Publishing, Inc., USA. Subscription rates: Print: $39 per issue. To subscribe, please contact Journals Subscriptions Department, SERVICES Advertisements Advertisement Sales Department, Reprints (minimum quantity 100 copies) Reprints Co-ordinator, Scientific Research Publishing, Inc., USA. COPYRIGHT Copyright 2011 Scientific Research Publishing, Inc. All Rights Reserved. No part of this publication may be reproduced, stored in a retrieval system, or transmitted, in any form or by any means, electronic, mechanical, photocopying, recording, scanning or otherwise, except as described below, without the permission in writing of the Publisher. Copying of articles is not permitted except for personal and internal use, to the extent permitted by national copyright law, or under the terms of a license issued by the national Reproduction Rights Organization. Requests for permission for other kinds of copying, such as copying for general distribution, for advertising or promotional purposes, for creating new collective works or for resale, and other enquiries should be addressed to the Publisher. Statements and opinions expressed in the articles and communications are those of the individual contributors and not the statements and opinion of Scientific Research Publishing, Inc. We assumes no responsibility or liability for any damage or injury to persons or property arising out of the use of any materials, instructions, methods or ideas contained herein. We expressly disclaim any implied warranties of merchantability or fitness for a particular purpose. If expert assistance is required, the services of a competent professional person should be sought. PRODUCTION INFORMATION For manuscripts that have been accepted for publication, please contact: ti@scirp.org

5 Efficiency Facility Inventory Competitive Strategy Supply Chain Strategy Supply Chain Structure Transportation Information Drivers for Supply Chain Performance Responsiveness Call for Papers Technology and Investment (TI) ISSN Print: ISSN Online: Editors-in-Chief Dr. Lucas M. Bernard Prof. Willi Semmler TI is an international refereed journal dedicated to the latest advancement of technology and investment. The goal of this journal is to keep a record of the state-of-the-art research and promote the research work in these fast moving areas. The City University of New York, USA New School University, USA Executive Editor in Chief Dr. Gang Ke Sinophere Capital Group, Limited, China Subject Coverage This journal invites original research and review papers that address the following issues in technology and investment. Topics of interest include, but are not limited to: Banking and Investment Business and Technology Risk Analysis and Management Business Climate for Investments Business Cycles and Investment, etc Business Developments Business Economics Business Management Capital Management Economics of Agricultural Technology Economics of Investments Economic Theory of Investment Energy Technology Economics Entrepreneurship and Innovation Evaluation of Technologies Finance Financial Evaluation Models and Techniques Financial Evaluation Techniques Financial Strategies of Investments Industry Studies Information Economics Influx of Investments on Technological Development International Investments Investments and Economic Development Investments and Environment (Climate Change) Investments in BRIC (Brazil, Russia, India, China) Countries Investments in Developing Countries Investment Strategies Investments under Uncertainty Labor Risks Prevention Legal Environment for Investments Management Engineering Managerial Economics Market Analysis Prediction of Future Technology Regional Directions of Investments Resources Management and Labor Issues Service Industry Economics Technology Economics Technology Innovation Technology Product Development Transition Economies and Foreign Investments US Economy and Foreign Investments We are also interested in short papers (letters) that clearly address a specific problem, and short survey or position papers that sketch the results or problems on a specific topic. Authors of selected short papers would be invited to write a regular paper on the same topic for future issues of the TI. Notes for Intending Authors Submitted papers should not have been previously published nor be currently under consideration for publication elsewhere. Paper submission will be handled electronically through the website. All papers are refereed through a peer review process. For more details about the submissions, please access the website. Website and ti@scirp.org

TABLE OF CONTENTS. Volume 3 Number 1A January I. Matsumura 81

TABLE OF CONTENTS. Volume 3 Number 1A January I. Matsumura 81 American Journal of Operations Research, 2013, 3, 81-258 Published Online January 2013 in SciRes (http://www.scirp.org/journal/ajor/) TABLE OF CONTENTS Volume 3 Number 1A January 2013 Bacterial Cells as

More information

TABLE OF CONTENTS. Volume 3 Number 2 June 2013

TABLE OF CONTENTS. Volume 3 Number 2 June 2013 Open Journal of Applied Sciences, 2013, 3, 155-262 Published Online June 2013 in SciRes (http://www.scirp.org/journal/ojapps/) TABLE OF CONTENTS Volume 3 Number 2 June 2013 Enhanced Biohydrogen Production

More information

TABLE OF CONTENTS. Volume 2 Number 12 December Classical and Fractional-Order Analysis of the Free and Forced Double Pendulum

TABLE OF CONTENTS. Volume 2 Number 12 December Classical and Fractional-Order Analysis of the Free and Forced Double Pendulum Engineering, 2010, 2, 935-1030 Published Online December 2010 in SciRes (http://www.scirp.org/journal/eng/) TABLE OF CONTENTS Volume 2 Number 12 December 2010 Classical and Fractional-Order Analysis of

More information

Table of Contents. Volume 4 Number 4 October Land-Use, Albedo and Air Temperature Changes in the Hula Valley (Israel) during

Table of Contents. Volume 4 Number 4 October Land-Use, Albedo and Air Temperature Changes in the Hula Valley (Israel) during Open Journal of Modern Hydrology, 2014, 4, 101-182 Published Online October 2014 in SciRes. http://www.scirp.org/journal/ojmh Table of Contents Volume 4 Number 4 October 2014 Land-Use, Albedo and Air Temperature

More information

Table of Contents. Volume 9 Number 3 March 2018

Table of Contents. Volume 9 Number 3 March 2018 9 772152 718003 03 Psychology, 2018, 9, 323-517 http://www.scirp.org/journal/psych ISSN Online: 2152-7199 ISSN Print: 2152-7180 Table of Contents Volume 9 Number 3 March 2018 The Development of Academic

More information

STEVAL-ISQ010V1. High-side current-sense amplifier demonstration board based on the TSC102. Features. Description

STEVAL-ISQ010V1. High-side current-sense amplifier demonstration board based on the TSC102. Features. Description High-side current-sense amplifier demonstration board based on the TSC102 Data brief Features Independent supply and input common-mode voltages Wide common-mode operating range: 2.8 V to 30 V Wide common-mode

More information

STEVAL-CCA040V1. 4X10 Watt dual/quad power amplifier demonstration board based on the STA540SAN. Features. Description

STEVAL-CCA040V1. 4X10 Watt dual/quad power amplifier demonstration board based on the STA540SAN. Features. Description 4X10 Watt dual/quad power amplifier demonstration board based on the STA540SAN Features High output-power capability: 4x10 W / 4 Ω at 17 V, 1 KHz, THD = 10% 2x26 W / 4 Ω at 14.4 V, 1 KHz, THD = 10% 2x15

More information

International development

International development Oslo 8 th September 2015 Vicky McNiff Head of IP Slide 1 This is Aker Solutions Global provider of products, systems and services to the oil and gas industry Built on more than 170 years of industrial

More information

STEVAL-ISA005V1. 1.8W buck topology power supply evaluation board with VIPer12AS. Features. Description. ST Components

STEVAL-ISA005V1. 1.8W buck topology power supply evaluation board with VIPer12AS. Features. Description. ST Components Features Switch mode general purpose power supply Input: 85 to 264Vac @ 50/60Hz Output: 15V, 100mA @ 50/60Hz Output power (pick): 1.6W Second output through linear regulator: 5V / 60 or 20mA Description

More information

The EDR Aerial Photo Decade Package

The EDR Aerial Photo Decade Package Wickenburg/Forepaugh W. US Highway 60/N. 436th Ave Wickenburg, AZ 85390 Inquiry Number: April 22, 2011 The Aerial Photo Decade Package Aerial Photo Decade Package Environmental Data Resources, Inc. ()

More information

Obsolete Product(s) - Obsolete Product(s)

Obsolete Product(s) - Obsolete Product(s) High power PNP epitaxial planar bipolar transistor Features High breakdown voltage V CEO = -120 V Complementary to 2STC4467 Fast-switching speed Typical f t = 20 MHz Fully characterized at 125 o C Applications

More information

TIP2955 TIP3055. Complementary power transistors. Features. Applications. Description

TIP2955 TIP3055. Complementary power transistors. Features. Applications. Description TIP2955 TIP3055 Complementary power transistors Features Low collector-emitter saturation voltage Complementary NPN - PNP transistors Applications General purpose Audio Amplifier Description The devices

More information

2ST2121. High power PNP epitaxial planar bipolar transistor. Features. Applications. Description 1 2 TO-3

2ST2121. High power PNP epitaxial planar bipolar transistor. Features. Applications. Description 1 2 TO-3 High power PNP epitaxial planar bipolar transistor Features High breakdown voltage V CEO = -250 V Complementary to 2ST5949 Typical f t = 25 MHz Fully characterized at 125 o C Applications Audio power amplifier

More information

STD1802T4-A. Low voltage fast-switching NPN power transistor. Features. Description. Applications

STD1802T4-A. Low voltage fast-switching NPN power transistor. Features. Description. Applications Low voltage fast-switching NPN power transistor Features This device is qualified for automotive application Very low collector to emitter saturation voltage High current gain characteristic Fast-switching

More information

BUX87. High voltage NPN power transistor. Features. Applications. Description

BUX87. High voltage NPN power transistor. Features. Applications. Description High voltage NPN power transistor Features High voltage capability (450 V V CEO ) Minimum lot-to-lot spread for reliable operation High DC current gain Applications Flyback and forward single transistor

More information

ST26025A. PNP power Darlington transistor. Features. Applications. Description

ST26025A. PNP power Darlington transistor. Features. Applications. Description ST26025A PNP power Darlington transistor Features High current monolithic Darlington configuration Integrated antiparallel collector-emitter diode Applications Automotive fan control Linear and switching

More information

AN2333 Application note

AN2333 Application note Application note White LED power supply for large display backlight Introduction This application note is dedicated to the STLD40D, it's a boost converter that operates from 3.0 V to 5.5 V dc and can provide

More information

EVAL-RHF310V1. EVAL-RHF310V1 evaluation board. Features. Description

EVAL-RHF310V1. EVAL-RHF310V1 evaluation board. Features. Description evaluation board Data brief Features Mounted Engineering Model RHF310K1: Rad-hard, 120 MHz, operational amplifier (see RHF310 datasheet for further information) Mounted components (ready-to-use) Material:

More information

BD235 BD237. Low voltage NPN power transistors. Features. Applications. Description. Low saturation voltage NPN transistors

BD235 BD237. Low voltage NPN power transistors. Features. Applications. Description. Low saturation voltage NPN transistors BD235 BD237 Low voltage NPN power transistors Features Low saturation voltage NPN transistors Applications Audio, power linear and switching applications Description The devices are manufactured in Planar

More information

2STC5242. High power NPN epitaxial planar bipolar transistor. Features. Application. Description

2STC5242. High power NPN epitaxial planar bipolar transistor. Features. Application. Description 2STC5242 High power NPN epitaxial planar bipolar transistor Features High breakdown voltage V CEO = 230 V Complementary to 2STA1962 Fast-switching speed Typical f T = 30 MHz Application Audio power amplifier

More information

BD241A BD241C. NPN power transistors. Features. Applications. Description. NPN transistors. Audio, general purpose switching and amplifier transistors

BD241A BD241C. NPN power transistors. Features. Applications. Description. NPN transistors. Audio, general purpose switching and amplifier transistors BD241A BD241C NPN power transistors Features. NPN transistors Applications Audio, general purpose switching and amplifier transistors Description The devices are manufactured in Planar technology with

More information

2STN2540. Low voltage fast-switching PNP power bipolar transistor. Features. Applications. Description

2STN2540. Low voltage fast-switching PNP power bipolar transistor. Features. Applications. Description 2STN2540 Low voltage fast-switching PNP power bipolar transistor Features Very low collector-emitter saturation voltage High current gain characteristic Fast switching speed Surface mounting device in

More information

Obsolete Product(s) - Obsolete Product(s)

Obsolete Product(s) - Obsolete Product(s) RS-232 quad line driver General features Current limited output ±10mA typ. Power-off source impedance 300Ω min. Simple slew rate control with external capacitor Flexible operating supply range Inputs are

More information

D44H8 - D44H11 D45H8 - D45H11

D44H8 - D44H11 D45H8 - D45H11 D44H8 - D44H11 D45H8 - D45H11 Complementary power transistors Features. Low collector-emitter saturation voltage Fast switching speed TAB Applications Power amplifier Switching circuits 1 2 3 Description

More information

AN279 Application note

AN279 Application note Application note Short-circuit protection on the L6201, L6202 and the L6203 By Giuseppe Scrocchi and Thomas Hopkins With devices like the L6201, L6202 or L6203 driving external loads you can often have

More information

2STC4468. High power NPN epitaxial planar bipolar transistor. Features. Application. Description

2STC4468. High power NPN epitaxial planar bipolar transistor. Features. Application. Description High power NPN epitaxial planar bipolar transistor Features High breakdown voltage V CEO = 140 V Complementary to 2STA1695 Typical f t = 20 MHz Fully characterized at 125 C Application 1 2 3 Audio power

More information

STEVAL-CCA011V1. Filter-free stereo 2x2.5 W Class-D audio power amplifier demonstration board based on the TS2012FC. Features.

STEVAL-CCA011V1. Filter-free stereo 2x2.5 W Class-D audio power amplifier demonstration board based on the TS2012FC. Features. Filter-free stereo x.5 W Class-D audio power amplifier demonstration board based on the TS0FC Data brief Features Operating range from V CC =.5 V to 5.5 V Dedicated standby mode active low for each channel

More information

Obsolete Product(s) - Obsolete Product(s)

Obsolete Product(s) - Obsolete Product(s) High power PNP epitaxial planar bipolar transistor Features High breakdown voltage V CEO = -250 V Complementary to 2STC5949 Typical f t = 25 MHz Fully characterized at 125 o C Application Audio power amplifier

More information

BD533 BD535 BD537 BD534 BD536

BD533 BD535 BD537 BD534 BD536 BD533 BD535 BD537 BD534 BD536 Complementary power transistors Features. BD533, BD535, and BD537 are NPN transistors Description The devices are manufactured in Planar technology with Base Island layout.

More information

MD2310FX. High voltage NPN power transistor for standard definition CRT display. Features. Application. Description

MD2310FX. High voltage NPN power transistor for standard definition CRT display. Features. Application. Description High voltage NPN power transistor for standard definition CRT display Features State-of-the-art technology: diffused collector enhanced generation Stable performance versus operating temperature variation

More information

Order codes Marking Package Packaging. STD2805T4 D2805 DPAK Tape & reel STD D2805 IPAK Tube. June 2007 Rev 1 1/9

Order codes Marking Package Packaging. STD2805T4 D2805 DPAK Tape & reel STD D2805 IPAK Tube. June 2007 Rev 1 1/9 Low voltage fast-switching PNP power transistor Preliminary Data Features Very low collector to emitter saturation voltage High current gain characteristic Fast-switching speed Surface-mounting DPAK (TO-252)

More information

TR136. High voltage fast-switching NPN power transistor. Features. Applications. Description

TR136. High voltage fast-switching NPN power transistor. Features. Applications. Description TR136 High voltage fast-switching NPN power transistor Features High voltage capability Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speed Applications

More information

IMPORTANT NOTICE Texas Instruments (TI) reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to obtain the

More information

Obsolete Product(s) - Obsolete Product(s)

Obsolete Product(s) - Obsolete Product(s) TIP33C Complementary power transistors Features. Low collector-emitter saturation voltage Complementary NPN - PNP transistors Applications General purpose Description The devices are manufactured in epitaxial-base

More information

2STC4468. High power NPN epitaxial planar bipolar transistor. Features. Application. Description

2STC4468. High power NPN epitaxial planar bipolar transistor. Features. Application. Description High power NPN epitaxial planar bipolar transistor Features High breakdown voltage V CEO = 140 V Complementary to 2STA1695 Typical f t = 20 MHz Fully characterized at 125 o C Application Audio power amplifier

More information

Order codes Marking Polarity Package Packaging. MJD44H11T4 MJD44H11 NPN DPAK Tape and reel MJD45H11T4 MJD45H11 PNP DPAK Tape and reel

Order codes Marking Polarity Package Packaging. MJD44H11T4 MJD44H11 NPN DPAK Tape and reel MJD45H11T4 MJD45H11 PNP DPAK Tape and reel MJD44H11 MJD45H11 Complementary power transistors Features. Low collector-emitter saturation voltage Fast switching speed Surface-mounting TO-252 (DPAK) power package in tape and reel (suffix "T4") Applications

More information

Obsolete Product(s) - Obsolete Product(s)

Obsolete Product(s) - Obsolete Product(s) 2N6284 2N6287 Complementary power Darlington transistors Features Complementary transistors in monolithic Darlington configuration Integrated collector-emitter antiparallel diode Applications Audio power

More information

BD243C BD244C. Complementary power transistors. Features. Applications. Description. Complementary NPN-PNP devices. Power linear and switching TO-220

BD243C BD244C. Complementary power transistors. Features. Applications. Description. Complementary NPN-PNP devices. Power linear and switching TO-220 BD243C BD244C Complementary power transistors Features. Complementary NPN-PNP devices Applications Power linear and switching Description The device is manufactured in Planar technology with Base Island

More information

R 1 typ. = 15 kω. Order codes Marking Polarity Package Packaging. 2N6036 2N6036 NPN SOT-32 Tube 2N6039 2N6039 PNP SOT-32 Tube

R 1 typ. = 15 kω. Order codes Marking Polarity Package Packaging. 2N6036 2N6036 NPN SOT-32 Tube 2N6039 2N6039 PNP SOT-32 Tube 2N6036 2N6039 Complementary power Darlington transistors Features. Good h FE linearity High f T frequency Monolithic Darlington configuration with integrated antiparallel collector-emitter diode Applications

More information

BUL743. High voltage fast-switching NPN power transistor. Features. Applications. Description

BUL743. High voltage fast-switching NPN power transistor. Features. Applications. Description High voltage fast-switching NPN power transistor Features Low spread of dynamic parameters High voltage capability Minimum lot-to-lot spread for reliable operation Very high switching speed Applications

More information

Obsolete Product(s) - Obsolete Product(s)

Obsolete Product(s) - Obsolete Product(s) Low voltage fast-switching PNP power transistor Features Very low collector-emitter saturation voltage High current gain characteristic Fast switching speed 3 Miniature SOT-23 plastic package for surface

More information

2STR2215. Low voltage fast-switching PNP power transistor. Features. Applications. Description

2STR2215. Low voltage fast-switching PNP power transistor. Features. Applications. Description Low voltage fast-switching PNP power transistor Features Very low collector-emitter saturation voltage High current gain characteristic Fast switching speed Miniature SOT-23 plastic package for surface

More information

AN1756 Application note

AN1756 Application note Application note Choosing a DALI implementation strategy with ST7DALIF2 Introduction This application note describes how to choose a DALI (Digital Addressable Lighting Interface) implementation strategy

More information

Drawer Unit Assembly. Wenger Corporation 2006 Printed in USA 12/06 Part #121B115-01

Drawer Unit Assembly. Wenger Corporation 2006 Printed in USA 12/06 Part #121B115-01 Assembly Instructions Rehearsal Resource Center Folio Box Option Model 121 Drawer Unit Assembly CONTENTS Warranty.......................................... 3 Important User Information............................

More information

2STA1943. High power PNP epitaxial planar bipolar transistor. Features. Application. Description

2STA1943. High power PNP epitaxial planar bipolar transistor. Features. Application. Description High power PNP epitaxial planar bipolar transistor Features High breakdown voltage V CEO > -230V Complementary to 2STC5200 Fast-switching speed Typical f T = 30 MHz Application Audio power amplifier Description

More information

1. Drain 2. Gate. Order code Marking Package Packaging. STAC4932F STAC4932F STAC244F Plastic tray. September 2010 Doc ID Rev 3 1/12

1. Drain 2. Gate. Order code Marking Package Packaging. STAC4932F STAC4932F STAC244F Plastic tray. September 2010 Doc ID Rev 3 1/12 RF power transistors HF/VHF/UHF N-channel MOSFETs Preliminary data Features Excellent thermal stability Common source push-pull configuration P OUT = 1000 W min. (1200 W typ.) with 26 db gain @ 123 MHz

More information

UM0791 User manual. Demonstration firmware for the DMX-512 communication protocol receiver based on the STM32F103Zx. Introduction

UM0791 User manual. Demonstration firmware for the DMX-512 communication protocol receiver based on the STM32F103Zx. Introduction User manual Demonstration firmware for the DMX-512 communication protocol receiver based on the STM32F103Zx Introduction This document describes how to use the demonstration firmware for the DMX-512 communication

More information

2STA1695. High power PNP epitaxial planar bipolar transistor. Features. Applications. Description

2STA1695. High power PNP epitaxial planar bipolar transistor. Features. Applications. Description High power PNP epitaxial planar bipolar transistor Features High breakdown voltage V CEO = -140 V Complementary to 2STC4468 Typical f t = 20 MHz Fully characterized at 125 C Applications 1 2 3 Audio power

More information

SGSD100 SGSD200. Complementary power Darlington transistors. Features. Applications. Description

SGSD100 SGSD200. Complementary power Darlington transistors. Features. Applications. Description SGSD100 SGSD200 Complementary power Darlington transistors Features Complementary NPN - PNP transistors Monolithic Darlington configuration Applications Audio power amplifier DC-AC converter Easy driver

More information

MJE182 Low voltage high speed switching NPN transistor Features Applications Description High speed switching NPN device

MJE182 Low voltage high speed switching NPN transistor Features Applications Description High speed switching NPN device Low voltage high speed switching NPN transistor Features High speed switching NPN device Applications Audio amplifier High speed switching applications Description This device is an NPN low voltage transistor

More information

SPV1001T40. Cool bypass switch for photovoltaic application. Features. Application. Description TO-220

SPV1001T40. Cool bypass switch for photovoltaic application. Features. Application. Description TO-220 Cool bypass switch for photovoltaic application Features I F =16 A, V R = 40 V Very low forward voltage drop Very low reverse leakage current 150 C operating junction temperature +4 Application Photovoltaic

More information

Wenger Corporation 2010 Printed in China 02/10 Part #148H Wenger Corporation, 555 Park Drive, P.O. Box 448, Owatonna, Minnesota

Wenger Corporation 2010 Printed in China 02/10 Part #148H Wenger Corporation, 555 Park Drive, P.O. Box 448, Owatonna, Minnesota Assembly Instructions Violin/Viola Storage Rack CONTENTS Safety Precautions.................................. Warranty.......................................... Important User Information............................

More information

Obsolete Product(s) - Obsolete Product(s)

Obsolete Product(s) - Obsolete Product(s) Dual NPN-PNP complementary Bipolar General features V CE(sat) h FE I C 0.35V >100 1A High gain Low V CE(sat) Simplified circuit design Reduced component count Applications Push-Pull or Totem-Pole configuration

More information

AN4014 Application Note Adjustable LED blinking frequency using a potentiometer and STM8SVLDISCOVERY Application overview

AN4014 Application Note Adjustable LED blinking frequency using a potentiometer and STM8SVLDISCOVERY Application overview Application Note Adjustable LED blinking frequency using a potentiometer and STM8SVLDISCOVERY Application overview Note: This document introduces a very simple application example which is ideal for beginners

More information

UM0920 User manual. 4 W non-isolated, wide input-voltage range SMPS demonstration board based on the VIPer16. Introduction

UM0920 User manual. 4 W non-isolated, wide input-voltage range SMPS demonstration board based on the VIPer16. Introduction User manual 4 W non-isolated, wide input-voltage range SMPS demonstration board based on the VIPer16 Introduction The purpose of this document is to provide information for the STEVAL-ISA071V2 switched

More information

Part Number Marking Package Packing. MD1802FX MD1802FX ISOWATT218FX Tube. August 2006 Rev 1 1/8

Part Number Marking Package Packing. MD1802FX MD1802FX ISOWATT218FX Tube. August 2006 Rev 1 1/8 High voltage NPN Power transistor for standard Definition CRT display Preliminary Data General features State-of-the-art technology: Diffused collector Enhanced generation More stable performances versus

More information

The EDR Aerial Photo Decade Package

The EDR Aerial Photo Decade Package I-710 Corridor - Segment 5 I-710 Corridor - Segment 5 Los Angeles County, CA 90201 Inquiry Number: March 25, 2009 The EDR Aerial Photo Decade Package EDR Aerial Photo Decade Package Environmental Data

More information

STB High voltage fast-switching NPN power transistor. Features. Applications. Description

STB High voltage fast-switching NPN power transistor. Features. Applications. Description High voltage fast-switching NPN power transistor Features Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speed Through hole TO-262 (I 2 PAK) power

More information

MD1802FX. High voltage NPN power transistor for standard definition CRT display. Features. Applications. Description

MD1802FX. High voltage NPN power transistor for standard definition CRT display. Features. Applications. Description High voltage NPN power transistor for standard definition CRT display Features State-of-the-art technology: Diffused collector Enhanced generation Stable performances versus operating temperature variation

More information

AN3332 Application note

AN3332 Application note Application note Generating PWM signals using STM8S-DISCOVERY Application overview This application user manual provides a short description of how to use the Timer 2 peripheral (TIM2) to generate three

More information

3STL2540. Low voltage high performance PNP power transistor. Features. Applications. Description

3STL2540. Low voltage high performance PNP power transistor. Features. Applications. Description Low voltage high performance PNP power transistor Datasheet production data Features Very low collector-emitter saturation voltage High current gain characteristic Small, thin, leadless SMD plastic package

More information

Obsolete Product(s) - Obsolete Product(s)

Obsolete Product(s) - Obsolete Product(s) PNP power Darlington transistor Features Monolithic Darlington configuration Integrated antiparallel collector-emitter diode Application Linear and switching industrial equipment Description The TIP145

More information

ST1510FX. High voltage fast-switching NPN Power transistor. General features. Applications. Internal schematic diagram. Description.

ST1510FX. High voltage fast-switching NPN Power transistor. General features. Applications. Internal schematic diagram. Description. High voltage fast-switching NPN Power transistor General features State-of-the-art technology: Diffused collector Enhanced generation EHVS1 More stable performances versus operating temperature variation

More information

ST13003D-K High voltage fast-switching NPN power transistor Features Applications Description

ST13003D-K High voltage fast-switching NPN power transistor Features Applications Description High voltage fast-switching NPN power transistor Features High voltage capability Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation ery high switching speed Integrated antiparallel

More information

R 1 typ. = 15 kω. Order codes Marking Polarity Package Packaging. STX112-AP X112 NPN TO92-AP Ammopack STX117-AP X117 PNP TO92-AP Ammopack

R 1 typ. = 15 kω. Order codes Marking Polarity Package Packaging. STX112-AP X112 NPN TO92-AP Ammopack STX117-AP X117 PNP TO92-AP Ammopack STX112 STX117 Complementary power Darlington transistors Features. Good h FE linearity High f T frequency Monolithic Darlington configuration with integrated antiparallel collector-emitter diode Application

More information

CPL-WB-02D3. Wide-band, directional coupler with integrated 50 ohm loaded isolated port. Features. Applications. Description.

CPL-WB-02D3. Wide-band, directional coupler with integrated 50 ohm loaded isolated port. Features. Applications. Description. CPL-WB-02D3 Wide-band, directional coupler with integrated 50 ohm loaded isolated port Datasheet production data Features 50 Ω nominal input / output impedance Wide operating frequency range (2400 MHz

More information

BUL38D. High voltage fast-switching NPN power transistor. Features. Applications. Description

BUL38D. High voltage fast-switching NPN power transistor. Features. Applications. Description High voltage fast-switching NPN power transistor Features High voltage capability Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speed High ruggedness

More information

LK115XX30 LK115XX33 - LK115XX50

LK115XX30 LK115XX33 - LK115XX50 LK115XX30 LK115XX33 - LK115XX50 ery low drop with inhibit voltage regulators Features ery low dropout voltage (0.2 typ.) ery low quiescent current (Typ. 0.01 µa in off mode, 280 µa in on mode) Output current

More information

TDA7233D 1W AUDIO AMPLIFIER WITH MUTE

TDA7233D 1W AUDIO AMPLIFIER WITH MUTE 1 AUDIO AMPLIFIER ITH MUTE 1 FEATURES OPERATING VOLTAGE 1.8 TO 15 V EXTERNAL MUTE OR POER DON FUNCTION IMPROVED SUPPLY VOLTAGE REJECTION LO QUIESCENT CURRENT HIGH POER CAPABILITY LO CROSSOVER DISTORTION

More information

BDX53B - BDX53C BDX54B - BDX54C

BDX53B - BDX53C BDX54B - BDX54C BDX53B - BDX53C BDX54B - BDX54C Complementary power Darlington transistors Features Good h FE linearity High f T frequency Monolithic Darlington configuration with integrated antiparallel collector-emitter

More information

High voltage NPN Power transistor for standard definition CRT display. R BE =60Ω typ. Order code Marking Package Packing

High voltage NPN Power transistor for standard definition CRT display. R BE =60Ω typ. Order code Marking Package Packing High voltage NPN Power transistor for standard definition CRT display Features State-of-the-art technology: Diffused collector enhanced generation Stable performance versus operating temperature variation

More information

KF25B, KF33B KF50B, KF80B

KF25B, KF33B KF50B, KF80B KF25B, KF33B KF50B, KF80B Very low drop voltage regulators with inhibit Datasheet production data Features Very low dropout voltage (0.4 V) Very low quiescent current (typ. 50 µa in OFF mode, 500 µa in

More information

2STD1665. Low voltage fast-switching NPN power transistor. Features. Applications. Description

2STD1665. Low voltage fast-switching NPN power transistor. Features. Applications. Description Low voltage fast-switching NPN power transistor Features Very low collector to emitter saturation volatage High current gain characteristic Fast-switching speed Through-hole IPAK (TO-251) power package

More information

Order codes Marking Package Packaging. STX0560 X0560 TO-92 Bag STX0560-AP X0560 TO-92AP Ammopack. December 2010 Doc ID Rev 1 1/9

Order codes Marking Package Packaging. STX0560 X0560 TO-92 Bag STX0560-AP X0560 TO-92AP Ammopack. December 2010 Doc ID Rev 1 1/9 High voltage fast-switching NPN power transistor Preliminary data Features High voltage capability Very high switching speed Applications Compact fluorescent lamps (CFLs) SMPS for battery charger Description

More information

Design for Innovative Value Towards a Sustainable Society

Design for Innovative Value Towards a Sustainable Society Design for Innovative Value Towards a Sustainable Society Mitsutaka Matsumoto Yasushi Umeda Keijiro Masui Shinichi Fukushige Editors Design for Innovative Value Towards a Sustainable Society Proceedings

More information

BUL39D. High voltage fast-switching NPN power transistor. Features. Application. Description

BUL39D. High voltage fast-switching NPN power transistor. Features. Application. Description High voltage fast-switching NPN power transistor Features Integrated antiparallel collector-emitter diode High voltage capability Low spread of dynamic parameters Minimum lot-to-lot spread for reliable

More information

STTH1210-Y. Automotive ultrafast recovery - high voltage diode. Features. Description

STTH1210-Y. Automotive ultrafast recovery - high voltage diode. Features. Description Automotive ultrafast recovery - high voltage diode Datasheet production data Features AEC-Q1 qualified Ultrafast, soft recovery Very low conduction and switching losses High frequency and high pulsed current

More information

AN2581 Application note

AN2581 Application note AN2581 Application note STM32F10xxx TIM application examples Introduction This application note is intended to provide practical application examples of the STM32F10xxx TIMx peripheral use. This document,

More information

HCF4093. QUAD 2-input NAND Schmidt trigger. Features. Description

HCF4093. QUAD 2-input NAND Schmidt trigger. Features. Description QUAD 2-input NAND Schmidt trigger Features Schmidt trigger action on each input with no external components Hysteresis voltage typically 0.9 V at V DD =5V and 2.3 V at V DD =10 V Noise immunity greater

More information

2STD1360 2STF1360-2STN1360

2STD1360 2STF1360-2STN1360 2STD1360 2STF1360-2STN1360 Low voltage fast-switching NPN power transistors Features Very low collector-emitter saturation voltage High current gain characteristic Fast-switching speed 4 1 2 3 4 1 3 2

More information

MD2009DFX. High voltage NPN power transistor for CRT TV. Features. Application. Description

MD2009DFX. High voltage NPN power transistor for CRT TV. Features. Application. Description High voltage NPN power transistor for CRT TV Features State-of-the-art technology: diffused collector enhanced generation Stable performance versus operating temperature variation Low base drive requirement

More information

Obsolete Product(s) - Obsolete Product(s)

Obsolete Product(s) - Obsolete Product(s) High Gain Low Voltage PNP Power Transistor General features Very low Collector to Emitter saturation voltage D.C. Current gain, h FE >100 1.5 A continuous collector current In compliance with the 2002/93/EC

More information

2STX2220. High Gain Low Voltage PNP Power Transistor. General features. Description. Internal schematic diagram. Applications.

2STX2220. High Gain Low Voltage PNP Power Transistor. General features. Description. Internal schematic diagram. Applications. High Gain Low Voltage PNP Power Transistor General features Very low Collector to Emitter saturation voltage D.C. Current gain, h FE >100 1.5 A continuous collector current In compliance with the 2002/93/EC

More information

Order codes Temperature range Package Packaging

Order codes Temperature range Package Packaging CMOS quad 3-state differential line driver Features TTL input compatible Typical propagation delay: 6 ns Typical output skew: 0.5 ns Output will not load line when V CC = 0 V Meets the requirements of

More information

AN2944 Application note

AN2944 Application note Application note Plethysmograph based on the TS507 Introduction This application note provides a method to make an analog front-end plethysmograph (from the ancient greek plethysmos, which means increase),

More information

Very high voltage NPN power transistor for high definition and slim CRT display. Part number Marking Package Packaging HD1750JL HD1750JL TO-264 Tube

Very high voltage NPN power transistor for high definition and slim CRT display. Part number Marking Package Packaging HD1750JL HD1750JL TO-264 Tube HD1750JL Very high voltage NPN power transistor for high definition and slim CRT display Features PRELIMINARY DATA State-of-the-art technology: diffused collector enhanced generation EHVS1 Wider range

More information

AN2837 Application note

AN2837 Application note Application note Positive to negative buck-boost converter using ST1S03 asynchronous switching regulator Abstract The ST1S03 is a 1.5 A, 1.5 MHz adjustable step-down switching regulator housed in a DFN6

More information

L4940xx5 L4940V5 L4940D2T5-TR 5 V L4940xx85 L4940V85 L4940P85 L4940D2T85-TR 8.5 V L4940xx10 L4940D2T10-TR 10 V L4940xx12 L4940D2T12-TR 12 V

L4940xx5 L4940V5 L4940D2T5-TR 5 V L4940xx85 L4940V85 L4940P85 L4940D2T85-TR 8.5 V L4940xx10 L4940D2T10-TR 10 V L4940xx12 L4940D2T12-TR 12 V Very low drop 1.5 A regulator Features Precise 5, 8.5, 10, 12 V outputs Low dropout voltage (450 mv typ. at 1 A) Very low quiescent current Thermal shutdown Short circuit protection Reverse polarity protection

More information

Intellectual Capital in Enterprise Success

Intellectual Capital in Enterprise Success Intellectual Capital in Enterprise Success Strategy Revisited Dr. Lindsay Moore and Lesley Craig, Esq. John Wiley & Sons, Inc. Additional praise for Strategic Intellectual Capital Lesley Craig and Lindsay

More information

STPS140Z-Y. Automotive power Schottky rectifier. Features. Description

STPS140Z-Y. Automotive power Schottky rectifier. Features. Description Automotive power Schottky rectifier Datasheet production data Features Very small conduction losses Negligible switching losses Extremely fast switching ECOPACK 2 compliant component AEC-Q101 qualified

More information

SD1728 (TH430) RF & Microwave transistors HF SSB application. Features. Description. Pin connection

SD1728 (TH430) RF & Microwave transistors HF SSB application. Features. Description. Pin connection SD1728 (TH430) RF & Microwave transistors HF SSB application Features 13.56MHz 44V Gold metallization Common emitter P OUT = 200W with 15dB gain Description The SD1728 is a 50V epitaxial silicon NPN planar

More information

LD1085CXX. 3 A low-drop, adjustable positive voltage regulator. Features. Description

LD1085CXX. 3 A low-drop, adjustable positive voltage regulator. Features. Description 3 A low-drop, adjustable positive voltage regulator Features Typical dropout 1.3 V (at 3 A) Three terminal adjustable output voltage Guaranteed output current up to 3 A Output tolerance ± 2 % at 25 C and

More information

AN2385 Application note

AN2385 Application note Application note Power dissipation and its linear derating factor, silicon Limited Drain Current and pulsed drain current in MOSFETs Introduction Datasheets of the modern power MOSFET devices, either of

More information

STN9260. High voltage fast-switching PNP power transistor. Features. Applications. Description. High voltage capability Fast switching speed

STN9260. High voltage fast-switching PNP power transistor. Features. Applications. Description. High voltage capability Fast switching speed High voltage fast-switching PNP power transistor Features High voltage capability Fast switching speed Applications Lighting Switch mode power supply Description This device is a high voltage fast-switching

More information

Part number Temperature range Package Packaging

Part number Temperature range Package Packaging ST1480AB ST1480AC 3.3 V powered, 15 kv ESD protected, up to 12 Mbps true RS-485/RS-422 transceiver Features ESD protection ±15 kv human body model ±8 kv IEC 1000-4-2 contact discharge Operate from a single

More information

MD2103DFH. High voltage NPN power transistor for standard definition CRT display. Features. Description. Applications

MD2103DFH. High voltage NPN power transistor for standard definition CRT display. Features. Description. Applications High voltage NPN power transistor for standard definition CRT display Features State-of-the-art technology: Diffused collector enhanced generation Stable performance versus operating temperature variation

More information

LM323. Three-terminal 3 A adjustable voltage regulators. Features. Description

LM323. Three-terminal 3 A adjustable voltage regulators. Features. Description Three-terminal 3 A adjustable voltage regulators Features Output current: 3 A Internal current and thermal limiting Typical output impedance: 0.01 W Minimum input voltage: 7.5 V Power dissipation: 30 W

More information

STN2580. High voltage fast switching NPN power transistor. Features. Applications. Description. High voltage capability Fast switching speed

STN2580. High voltage fast switching NPN power transistor. Features. Applications. Description. High voltage capability Fast switching speed High voltage fast switching NPN power transistor Datasheet production data Features High voltage capability Fast switching speed Applications Lighting Switch mode power supply Description This device is

More information

Order codes Marking Package Packaging 2STF SOT-89 2STN2550 N2550 SOT-223. November 2008 Rev 1 1/8

Order codes Marking Package Packaging 2STF SOT-89 2STN2550 N2550 SOT-223. November 2008 Rev 1 1/8 2STF2550 2STN2550 Low voltage high performance PNP power transistors Preliminary Data Features Very low collector-emitter saturation voltage High current gain characteristic Fast switching speed Surface

More information

Order code Temperature range Package Packaging

Order code Temperature range Package Packaging Low power high speed RS-485/RS-422 transceiver Features Low supply current: 5 ma max -7 V to 12 V common mode input voltage range 70 mv typical input hysteresis Designed for 25 Mbps operation Operate from

More information