RADIATION HARDENED POWER MOSFET THRU-HOLE TO-25AF (TO-39) PD-93789G IRHF573 V, N-CHANNEL REF: MIL-PRF-95/7 TECHNOLOGY R 5 Product Summary Part Number Radiation Level RDS(on) QPL Part Number IRHF573 krads(si).8.7a IRHF533 3 krads(si).8.7a JANSF2N7493T2 IRHF553 5 krads(si).8.7a JANSG2N7493T2 IRHF583 krads(si)..7a JANSH2N7493T2 I D TO-39 Description IR HiRel R5 technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 8 (MeV/(mg/cm 2 )). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching and temperature stability of electrical parameters. Features Single Event Effect (SEE) Hardened Ultra Low RDS(on) Identical Pre- and Post-Electrical Test Conditions Repetitive Avalanche Ratings Dynamic dv/dt Ratings Simple Drive Requirements Hermetically Sealed ESD Rating: Class C per MIL-STD-75, Method 2 Absolute Maximum Ratings Symbol Parameter Value Units I D @ V GS = 2V, T C = 25 C Continuous Drain Current.7 I D2 @ V GS = 2V, T C = C Continuous Drain Current 7.4 I DM @ T C = 25 C Pulsed Drain Current 46.8 P D @ T C = 25 C Maximum Power Dissipation 25 W Linear Derating Factor.2 W/ C V GS Gate-to-Source Voltage ± 2 V E AS Single Pulse Avalanche Energy 73 mj I AR Avalanche Current.7 A E AR Repetitive Avalanche Energy 2.5 mj dv/dt Peak Diode Recovery dv/dt 4.9 V/ns T J Operating Junction and -55 to + 5 T STG Storage Temperature Range C Lead Temperature 3 (.63 in. /.6 mm from case for s) Weight.98 (Typical) g For Footnotes, refer to the page 2. International Rectifier HiRel Products, Inc. A
Electrical Characteristics @ Tj = 25 C (Unless Otherwise Specified) IRHF573 Symbol Parameter Min. Typ. Max. Units Test Conditions BV DSS Drain-to-Source Breakdown Voltage V V GS = V, I D =.ma BV DSS / T J Breakdown Voltage Temp. Coefficient.2 V/ C Reference to 25 C, I D =.ma R DS(on) Static Drain-to-Source On-Resistance.8 V GS = 2V, I D2 = 7.4A V GS(th) Gate Threshold Voltage 2. 4. V V DS = V GS, I D =.ma Gfs Forward Transconductance 8.7 S V DS = 5V, I D2 = 7.4A I DSS V DS = 8V, V GS = V Zero Gate Voltage Drain Current µa 25 V DS = 8V,V GS = V,T J =25 C I GSS Gate-to-Source Leakage Forward V GS = 2V na Gate-to-Source Leakage Reverse - V GS = -2V Q G Total Gate Charge 5 I D =.7A Q GS Gate-to-Source Charge 7.4 nc V DS = 5V Q GD Gate-to-Drain ( Miller ) Charge 2 V GS = 2V t d(on) Turn-On Delay Time 25 V DD = 5V tr Rise Time I D =.7A ns t d(off) Turn-Off Delay Time 35 R G = 7.5 t f Fall Time 3 V GS = 2V Ls +L D Total Inductance 7. nh C iss Input Capacitance 38 V GS = V C oss Output Capacitance 362 pf V DS = 25V C rss Reverse Transfer Capacitance 45 ƒ =.MHz Measured from Drain lead (6mm /.25 in from package) to Source lead (6mm/.25 in from package) with Source wire internally bonded from Source pin to Drain pin Source-Drain Diode Ratings and Characteristics Symbol Parameter Min. Typ. Max. Units Test Conditions I S Continuous Source Current (Body Diode).7 I SM Pulsed Source Current (Body Diode) 47 A V SD Diode Forward Voltage.5 V T J = 25 C,I S =.7A, V GS = V t rr Reverse Recovery Time 22 ns T J = 25 C, I F =.7A, V DD 25V Q rr Reverse Recovery Charge 85 nc di/dt = A/µs t on Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L S +L D ) Thermal Resistance Symbol Parameter Min. Typ. Max. Units R JC Junction-to-Case 5. R JA Junction-to-Ambient (Typical Socket Mount) 75 Footnotes: Repetitive Rating; Pulse width limited by maximum junction temperature. V DD = 5V, starting T J = 25 C, L = 2.53mH, Peak I L =.7A, V GS = 2V I SD.7A, di/dt 26A/µs, V DD V, T J 5 C Pulse width 3 µs; Duty Cycle 2% Total Dose Irradiation with V GS Bias. 2 volt V GS applied and V DS = during irradiation per MIL-STD-75, Method 9, condition A. Total Dose Irradiation with V DS Bias. 8 volt V DS applied and V GS = during irradiation per MlL-STD-75, Method 9, condition A. 2 International Rectifier HiRel Products, Inc. C/W
Radiation Characteristics IRHF573 IR HiRel Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at IR HiRel is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. Table. Electrical Characteristics @ Tj = 25 C, Post Total Dose Irradiation Symbol Parameter Up to 5 krads (Si) krads (Si) 2 Units Test Conditions Min. Max. Min. Max. BV DSS Drain-to-Source Breakdown Voltage V V GS = V, I D =.ma V GS(th) Gate Threshold Voltage 2. 4..5 4. V V DS = V GS, I D =.ma I GSS Gate-to-Source Leakage Forward na V GS = 2V I GSS Gate-to-Source Leakage Reverse - - na V GS = -2V I DSS Zero Gate Voltage Drain Current 25 µa V DS = 8V, V GS = V R DS(on) Static Drain-to-Source On-State Resistance (TO-3).64.8 V GS = 2V, I D2 = 7.4A R DS(on) Static Drain-to-Source On-State Resistance (TO-39).8. V GS = 2V, I D2 = 7.4A V SD Diode Forward Voltage.5.5 V V GS = V, I S =.7A. Part numbers IRHF573 (), IRHF533 (JANSF2N7493T2) and IRHF553 (JANSG2N7493T2) 2. Part numbers IRHF583 (JANSH2N7493T2) IR HiRel radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2. Table 2. Typical Single Event Effect Safe Operating Area LET (MeV/(mg/cm 2 )) Energy (MeV) Range (µm) V -5V VDS (V) -V -5V -2V 38 ± 5% 3 ± 7.5% 38 ± 7.5% 6 ± 5% 33 ± 7.5% 3 ± % 35 25 84 ± 5% 35 ± % 28 ± 7.5% 8 25 Bias VDS (V) 2 8 6 4 2-5 - -5-2 LET=38 ± 5% LET=6 ± 5% LET=84 ± 5% Bias VGS (V) Fig a. Typical Single Event Effect, Safe Operating Area For Footnotes, refer to the page 2. 3 International Rectifier HiRel Products, Inc.
IRHF573 I D, Drain-to-Source Current (A) TOP BOTTOM VGS 5V 2V V 9.V 8.V 7.V 6.V 5.V 5.V I D, Drain-to-Source Current (A) TOP BOTTOM VGS 5V 2V V 9.V 8.V 7.V 6.V 5.V 5.V 2µs PULSE WIDTH T J = 25 C. V DS, Drain-to-Source Voltage (V) Fig. Typical Output Characteristics 2µs PULSE WIDTH T J = 5 C. V DS, Drain-to-Source Voltage (V) Fig 2. Typical Output Characteristics I D, Drain-to-Source Current (A) T J= 25 C T J= 5 C V DS= 5V 2µs PULSE WIDTH 5 7 9 3 5 V GS, Gate-to-Source Voltage (V) R DS(on), Drain-to-Source On Resistance (Normalized) 2.5 I D =.7A 2..5..5 V GS = 2V. -6-4 -2 2 4 6 8 2 4 6 T J, Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature C, Capacitance (pf) 2 6 2 8 4 VGS = V, f = MHz Ciss = Cgs + Cgd, C ds SHORTED Crss = Cgd Coss = Cds + Cgd C iss C oss C rss V DS, Drain-to-Source Voltage (V) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage FOR TEST CIRCUIT SEE FIGURE 3 2 3 4 5 Q G, Total Gate Charge (nc) Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 4 International Rectifier HiRel Products, Inc. V GS, Gate-to-Source Voltage (V) 2 6 2 8 4 I = D.7A V DS= 8V V DS= 5V V DS= 2V
I D, Drain-to-Source Current (A) I SD, Reverse Drain Current (A) T J = 25 C T J = 5 C V GS = V...5..5 2. 2.5 3. 3.5 V SD,Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage.. Tc = 25 C Tj = 5 C Single Pulse IRHF573 OPERATION IN THIS AREA LIMITED BY R DS (on) s ms ms DC V DS, Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area I D, Drain Current (A) 2 8 6 4 2 25 5 75 25 5 T C, Case Temperature ( C) E AS, Single Pulse Avalanche Energy (mj) 4 32 24 6 8 I D TOP 5.2A 7.4A BOTTOM.7A 25 5 75 25 5 Starting T, Junction Temperature ( J C) Fig 9. Maximum Drain Current Vs. Case Temperature Fig. Maximum Avalanche Energy Vs. Drain Current Thermal Response (Z thjc ). D =.5.2..5.2. SINGLE PULSE (THERMAL RESPONSE) Notes:. Duty factor D = t / t 2 2. Peak T J = P DM x Z thjc + T C...... t, Rectangular Pulse Duration (sec) PDM t t2 Fig. Maximum Effective Transient Thermal Impedance, Junction-to-Case 5 International Rectifier HiRel Products, Inc.
IRHF573 Fig 2a. Unclamped Inductive Test Circuit Fig 2b. Unclamped Inductive Waveforms Fig 3a. Gate Charge Waveform Fig 3b. Gate Charge Test Circuit Fig 4a. Switching Time Test Circuit Fig 4b. Switching Time Waveforms 6 International Rectifier HiRel Products, Inc.
IRHF573 Case Outline and Dimensions - TO-25AF (TO-39) www.infineon.com/irhirel Infineon Technologies Service Center: USA Tel: + (866) 95-959 and International Tel: +49 89 234 65555 Leominster, Massachusetts 453, USA Tel: + (978) 534-5776 San Jose, California 9534, USA Tel: + (48) 434-5 Data and specifications subject to change without notice. 7 International Rectifier HiRel Products, Inc.
IRHF573 IMPORTANT NOTICE The information given in this document shall be in no event regarded as guarantee of conditions or characteristic. The data contained herein is a characterization of the component based on internal standards and is intended to demonstrate and provide guidance for typical part performance. It will require further evaluation, qualification and analysis to determine suitability in the application environment to confirm compliance to your system requirements. With respect to any example hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind including without limitation warranties on non- infringement of intellectual property rights and any third party. In addition, any information given in this document is subject to customer s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer s product and any use of the product of Infineon Technologies in customer s applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of any customer s technical departments to evaluate the suitability of the product for the intended applications and the completeness of the product information given in this document with respect to applications. For further information on the product, technology, delivery terms and conditions and prices, please contact your local sales representative or go to (www.infineon.com/hirel). WARNING Due to technical requirements products may contain dangerous substances. For information on the types in question, please contact your nearest Infineon Technologies office. 8 International Rectifier HiRel Products, Inc.