UNISONIC TECHNOLOGIES CO., LTD 4A, 6V N-CHANNEL POWER MOSFET DESCRIPTION TO-22F TO-22F The UTC 4N6-C is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits. TO-22F2 TO-25 FEATURES * R DS(ON) < 2.5Ω @ = V * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, high Ruggedness TO-252 SYMBOL ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 2 3 4N6L-TF3-T 4N6G-TF3-T TO-22F G D S Tube 4N6L-TF-T 4N6G-TF-T TO-22F G D S Tube 4N6L-TF2-T 4N6G-TF2-T TO-22F2 G D S Tube 4N6L-TM3-T 4N6G-TM3-T TO-25 G D S Tube 4N6L-TN3-R 4N6G-TN3-R TO-252 G D S Tape Reel Note: Pin Assignment: G: Gate D: Drain S: Source of 7 Copyright 24 Unisonic Technologies Co., Ltd
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ABSOLUTE MAXIMUM RATINGS (T C = 25 С, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage V DSS 6 V Gate-Source Voltage S ±3 V Avalanche Current (Note 2) I AR 4.4 A Drain Current Continuous I D 4. A Pulsed (Note 2) I DM 6 A Avalanche Energy Single Pulsed (Note 3) E AS 24 mj Repetitive (Note 2) E AR.6 mj Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns TO-22F/TO-22F Power Dissipation TO-22F2 P D 36 W TO-25/TO-252 5 W Junction Temperature T J +5 С Operating Temperature T OPR -55 ~ +5 С Storage Temperature T STG -55 ~ +5 С Notes:. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating : Pulse width limited by maximum junction temperature 3. L = 3mH, I AS = 4A, V DD = 5V, R G = 25 Ω, Starting T J = 25 C 4. I SD 4.4A, di/dt 2A/μs, V DD BV DSS, Starting T J = 25 C THERMAL DATA PARAMETER SYMBOL RATINGS UNIT TO-22F/TO-22F Junction to Ambient TO-22F2 θ JA 62.5 С/W TO-25/TO-252 С/W TO-22F/TO-22F 3.47 С/W Junction to Case TO-22F2 θ JC 3.28 С/W TO-25/TO-252 2.5 С/W UNISONIC TECHNOLOGIES CO., LTD 3 of 7
ELECTRICAL CHARACTERISTICS (T C =25 С, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BV DSS = V, I D = 25μA 6 V V DS = 6V, = V μa Drain-Source Leakage Current I DSS VDS = 48V, = V, TC = 25 С µa Gate-Source Leakage Current Forward = 3V, V DS = V na I GSS Reverse = -3V, V DS = V - na Breakdown Voltage Temperature Coefficient BV DSS / T J I D =25μA,Referenced to 25 C.6 V/ С ON CHARACTERISTICS Gate Threshold Voltage (TH) V DS =, I D = 25μA 2. 4. V Static Drain-Source On-State Resistance R DS(ON) = V, I D = 2.2A.9 2.5 Ω DYNAMIC CHARACTERISTICS Input Capacitance C ISS 6 7 pf V DS = 25V, = V, Output Capacitance C OSS 6 8 pf f = MHz Reverse Transfer Capacitance C RSS 6 5 pf SWITCHING CHARACTERISTICS Turn-On Delay Time t D(ON) 35 55 ns Turn-On Rise Time t R V DD = 3V, I D = 4.A, 55 8 ns Turn-Off Delay Time t D(OFF) R G = 25Ω (Note, 2) 3 ns Turn-Off Fall Time t F 4 6 ns Total Gate Charge Q G 2 5 nc V DS = 48V,I D = 4.A, Gate-Source Charge Q GS 5 nc = V (Note, 2) Gate-Drain Charge Q GD 3 nc SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage V SD = V, I S = 4.4A.4 V Maximum Continuous Drain-Source Diode Forward Current I SD 4.4 A Maximum Pulsed Drain-Source Diode Forward Current I SM 7.6 A Reverse Recovery Time t rr = V, I S = 4.4A, 25 ns Reverse Recovery Charge Q RR di F /dt = A/μs (Note ).5 μc Notes:. Pulse Test: Pulse width 3μs, Duty cycle 2% 2. Essentially independent of operating temperature UNISONIC TECHNOLOGIES CO., LTD 4 of 7
TEST CIRCUITS AND WAVEFORMS D.U.T. + V DS + - - L R G Driver V DD Same Type as D.U.T. * dv/dt controlled by R G * I SD controlled by pulse period * D.U.T.-Device Under Test Peak Diode Recovery dv/dt Test Circuit (Driver) P.W. Period D= P. W. Period = V I FM, Body Diode Forward Current I SD (D.U.T.) di/dt I RM Body Diode Reverse Current Body Diode Recovery dv/dt V DS (D.U.T.) V DD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD 5 of 7
TEST CIRCUITS AND WAVEFORMS (Cont.) V DS 9% % t D(ON) t R t D(OFF) t F Switching Test Circuit Switching Waveforms V Q G Q GS Q GD Charge Gate Charge Test Circuit Gate Charge Waveform BV DSS I AS V DD I D(t) V DS(t) t p Time Unclamped Inductive Switching Test Circuit Unclamped Inductive Switching Waveforms UNISONIC TECHNOLOGIES CO., LTD 6 of 7
TYPICAL CHARACTERISTICS 3 Drain Current vs. Drain-Source Breakdown Voltage 3 Drain Current vs. Gate Threshold Voltage Drain Current, ID (µa) 25 2 5 5 Drain Current, ID (µa) 25 2 5 5 2 4 6 8 Drain-Source Breakdown Voltage, BV DSS (V). 2. 3. 4. 5. 6. Gate Threshold Voltage, V TH (V) 3.5 Drain-Source On-State Resistance Characteristics Continuous Drain-Source Diode Forward Current vs. Source to Drain Voltage 7. Drain Current, ID (A) 3. 2.5 2..5..5 =.V, I D =2.2A Continuous Drain-Source Diode Forward Current, ISD (A) 6. 5. 4. 3. 2... 2. 3. 4. Drain to Source Voltage, V DS (V) 5..2.4.6.8. Source to Drain Voltage, V SD (V) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD 7 of 7