HEXFRED Ultrafast Soft Recovery Diode, 2 x 8 FETURES Ultrafast and ultrasoft recovery VS-HF6T6C-M3 3L TO-22B Base common cathode 4 2 Common node cathode node 3 PRIMRY CHRCTERISTICS Package 3L TO-22B I F(V) 2 x 8 V R 6 V V F at I F.4 V t rr typ. 8 ns T J max. 5 C Circuit configuration Common cathode Very low I RRM and Q rr Designed and qualified according to JEDEC -JESD47 Material categorization: for definitions of compliance please see www.vishay.com/doc?9992 BENEFITS Reduced RFI and EMI Reduced power loss in diode and switching transistor Higher frequency operation Reduced snubbing Reduced parts count DESCRIPTION VS-HF6T6C... is a state of the art center tap ultrafast recovery diode. Employing the latest in epitaxial construction and advanced processing techniques it features a superb combination of characteristics which result in performance which is unsurpassed by any rectifier previously available. With basic ratings of 6 V and 8 per leg continuous current, the VS-HF6T6C... is especially well suited for use as the companion diode for IGBTs and MOSFETs. In addition to ultrafast recovery time, the HEXFRED product line features extremely low values of peak recovery current (I RRM ) and does not exhibit any tendency to snap-off during the t b portion of recovery. The HEXFRED features combine to offer designers a rectifier with lower noise and significantly lower switching losses in both the diode and the switching transistor. These HEXFRED advantages can help to significantly reduce snubbing, component count and heatsink sizes. The HEXFRED VS-HF6T6C... is ideally suited for applications in power supplies and power conversion systems (such as inverters), motor drives, and many other similar applications where high speed, high efficiency is needed. BSOLUTE MXIMUM RTINGS PRMETER SYMBOL TEST CONDITIONS VLUES UNITS Cathode to anode voltage V R 6 V per leg 8 Maximum continuous forward current I F T C = C per device 6 Single pulse forward current I FSM 6 Maximum repetitive forward current I FRM 24 T C = 25 C 36 Maximum power dissipation P D T C = C 4 W Operating junction and storage temperature range T J, T Stg -55 to +5 C Revision: 2-ug-7 Document Number: 9623 For technical questions within your region: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHNGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN ND THIS DOCUMENT RE SUBJECT TO SPECIFIC DISCLIMERS, SET FORTH T www.vishay.com/doc?9
VS-HF6T6C-M3 ELECTRICL SPECIFICTIONS PER LEG ( unless otherwise specified) Maximum forward voltage V FM PRMETER SYMBOL TEST CONDITIONS MIN. TYP. MX. UNITS Cathode to anode breakdown voltage V BR I R = μ 6 - - I F = 6 See fig. -.7 2. I F = 8 -.4.7 V I F = 8, -.4.7 Maximum reverse V R = V R rated -.3 5. I leakage current RM See fig. 2, V R =.8 x V R rated - 5 μ Junction capacitance C T See fig. 3-25 pf Series inductance L S Measured lead to lead 5 mm from package body - 8. - nh DYNMIC RECOVERY CHRCTERISTICS PER LEG ( unless otherwise specified) PRMETER SYMBOL TEST CONDITIONS MIN. TYP. MX. UNITS Reverse recovery time See fig. 5 and fig. Peak recovery current See fig. 6 Reverse recovery charge See fig. 7 Peak rate of fall recovery current during t b See fig. 8 t rr I F =., di F /dt = 2 /μs, V R = 3 V - 8 - t rr - 37 55 t rr2-55 9 I RRM - 3.5 5. I RRM2 I F = 8. - 4.5 8. Q di F /dt = 2 /μs rr - 65 38 Q rr2-24 36 di (rec)m /dt - 24 - di (rec)m /dt2-2 - ns nc /μs THERML - MECHNICL SPECIFICTIONS PER LEG PRMETER SYMBOL TEST CONDITIONS MIN. TYP. MX. UNITS Lead temperature T lead.63" from case (.6 mm) for s - - 3 C Junction to case, - - 3.5 single leg conducting R thjc Junction to case, - -.75 both legs conducting K/W Thermal resistance, R junction to ambient thj Typical socket mount - - 8 Thermal resistance, case to heatsink R thcs Mounting surface, flat, smooth and greased -.5 - Weight Mounting torque - 2. - g -.7 - oz. Marking device Case style 3L TO-22B HF6T6C 6. (5.) - 2 () kgf cm (lbf in) Revision: 2-ug-7 2 Document Number: 9623 For technical questions within your region: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHNGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN ND THIS DOCUMENT RE SUBJECT TO SPECIFIC DISCLIMERS, SET FORTH T www.vishay.com/doc?9
VS-HF6T6C-M3 I F - Instantaneous Forward Current () T J = 5 C..4.8.2.6 2. 2.4 2.8 3.2 V FM - Forward Voltage Drop (V) I R - Reverse Current (µ)... T J = 5 C 2 3 4 5 V R - Reverse Voltage (V) 6 Fig. - Maximum Forward Voltage Drop vs. Instantaneous Forward Current Fig. 2 - Typical Reverse Current vs. Reverse Voltage C T - Junction Capacitance (pf) V R - Reverse Voltage (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage Z thjc - Thermal Response. Single pulse (thermal response) D =.5 D =.2 D =. D =.5 D =.2 D =. Notes:. Duty factor D = t /t 2 2. Peak T J = P DM x Z thjc + T C...... t - Rectangular Pulse Duration (s) P DM t t 2 Fig. 4 - Maximum Thermal Impedance Z thjc Characteristics Revision: 2-ug-7 3 Document Number: 9623 For technical questions within your region: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHNGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN ND THIS DOCUMENT RE SUBJECT TO SPECIFIC DISCLIMERS, SET FORTH T www.vishay.com/doc?9
VS-HF6T6C-M3 t rr (ns) 8 6 4 I F = 6 I F = 8. I F = 4. Q rr (nc) 5 4 3 2 I F = 6 I F = 8. I F = 4. 2 di F /dt (/µs) Fig. 5 - Typical Reverse Recovery Time vs. di F /dt di F /dt (/µs) Fig. 7 - Typical Stored Charge vs. di F /dt I rr () 2 6 2 8 I F = 6 I F = 8. I F = 4. di (rec)m /dt (/µs) I F = 6 I F = 8. I F = 4. 4 di F /dt (/µs) Fig. 6 - Typical Recovery Current vs. di F /dt di F /dt (/µs) Fig. 8 - Typical di (rec)m /dt vs. di F /dt (3) t rr I F t a tb (2) I RRM (4) Q rr.5 I RRM di (rec)m /dt (5).75 I RRM () di F /dt () di F /dt - rate of change of current through zero crossing (4) Q rr - area under curve defined by t rr and I RRM (2) I RRM - peak reverse recovery current (3) t rr - reverse recovery time measured from zero crossing point of negative going I F to point where a line passing through.75 I RRM and.5 I RRM extrapolated to zero current. Fig. 9 - Reverse Recovery Waveform and Definitions t rr x I RRM 2 Revision: 2-ug-7 4 Document Number: 9623 For technical questions within your region: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHNGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN ND THIS DOCUMENT RE SUBJECT TO SPECIFIC DISCLIMERS, SET FORTH T www.vishay.com/doc?9 Q rr = (5) di (rec)m /dt - peak rate of change of current during t b portion of t rr
VS-HF6T6C-M3 ORDERING INFORMTION TBLE Device code VS- HF 6 T 6 C -M3 2 3 4 5 6 7 8 - product 2 - HEXFRED family 3 - Electron irradiated 4 - Current rating (6 = 6 ) 45 - Package: 4 T = 3L TO-22B 6 - Voltage rating (6 = 6 V) 7 - Circuit configuration: C = common cathode 8 - Environmental digit: -M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free ORDERING INFORMTION (Example) PREFERRED P/N QUNTITY PER T/R MINIMUM ORDER QUNTITY PCKGING DESCRIPTION VS-HF6T6C-M3 5 ntistatic plastic tube Dimensions Part marking information SPICE model LINKS TO RELTED DOCUMENTS www.vishay.com/doc?9654 www.vishay.com/doc?9528 www.vishay.com/doc?95689 Revision: 2-ug-7 5 Document Number: 9623 For technical questions within your region: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHNGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN ND THIS DOCUMENT RE SUBJECT TO SPECIFIC DISCLIMERS, SET FORTH T www.vishay.com/doc?9
DIMENSIONS in millimeters and inches 3L TO-22B Outline Dimensions Q (6) E Ø P.4 M B M (6) H (7) B (H) (E) Thermal pad 2 3 D D C C L (2) (6) D c D2 (6) D 3 x b 3 x b2 Detail B 2 Detail B L C E (6) Base metal (b, b2) Plating.5 M B M 2 x e e View - c c (4) (4) b, b3 Section C - C and D - D Lead tip Conforms to JEDEC outline TO-22B SYMBOL MILLIMETERS INCHES MILLIMETERS INCHES NOTES SYMBOL MIN. MX. MIN. MX. MIN. MX. MIN. MX. NOTES 4.25 4.65.67.83 D2.68 2.88.46.57 6.4.4.45.55 E..5.398.44 3, 6 2 2.5 2.92.98.5 E 6.86 8.89.27.35 6 b.69..27.4 e 2.4 2.67.95.5 b.38.97.5.38 4 e 4.88 5.28.92.28 b2.2.73.47.68 H 6.9 6.48.24.255 6, 7 b3.4.73.45.68 4 L 3.52 4.2.532.552 c.36.6.4.24 L 3.32 3.82.3.5 2 c.36.56.4.22 4 Ø P 3.54 3.9.39.54 D 4.85 5.35.585.64 3 Q 2.6 3..2.8 D 8.38 9.2.33.355 Notes () Dimensioning and tolerancing as per SME Y4.5M-994 (2) Lead dimension and finish uncontrolled in L (3) Dimension D, D, and E do not include mold flash. Mold flash shall not exceed.27 mm (.5") per side. These dimensions are measured at the outermost extremes of the plastic body (4) Dimension b, b3, and c apply to base metal only (5) Controlling dimensions: inches (6) Thermal pad contour optional within dimensions E, H, D2, and E (7) Outline conforms to JEDEC TO-22, except D2 (minimum) Revision: 3-ug-7 Document Number: 9654 For technical questions within your region: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHNGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN ND THIS DOCUMENT RE SUBJECT TO SPECIFIC DISCLIMERS, SET FORTH T www.vishay.com/doc?9
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