BUK A. N-channel TrenchMOS logic level FET

Similar documents
BUK A. N-channel TrenchMOS standard level FET

BUK764R0-75C. N-channel TrenchMOS standard level FET. 12 V Motor, lamp and solenoid loads High performance automotive power systems

BUK B. N-channel TrenchMOS standard level FET

N-channel TrenchMOS logic level FET

BUK B. N-channel TrenchMOS standard level FET

12 V and 24 V loads Automotive and general purpose power switching Motors, lamps and solenoids

PSMN B. 1. General description. 2. Features and benefits. 3. Applications. 4. Quick reference data

BUK9Y B. N-channel TrenchMOS logic level FET

BUK9Y19-75B. N-channel TrenchMOS logic level FET

BUK626R2-40C. N-channel TrenchMOS intermediate level FET. AEC Q101 compliant Suitable for standard and logic level gate drive sources

Q101 compliant Suitable for logic level gate drive sources Suitable for thermally demanding environments due to 175 C rating

12 V and 24 V Automotive systems Electric and electro-hydraulic power steering Motors, lamps and solenoid control

BUK A. Low conduction losses due to low on-state resistance Q101 compliant Suitable for logic level gate drive sources

N-channel TrenchMOS intermediate level FET. AEC Q101 compliant Compatible with logic and standard level gate drives

PSMN4R5-40BS. N-channel 40 V 4.5 mω standard level MOSFET in D2PAK. High efficiency due to low switching and conduction losses

PSMN2R0-30YL. N-channel 30 V 2 mω logic level MOSFET in LFPAK. High efficiency due to low switching and conduction losses

PSMN3R3-80ES. N-channel 80 V, 3.3 mω standard level MOSFET in I2PAK. High efficiency due to low switching and conduction losses

Q101 compliant Suitable for standard level gate drive sources Suitable for thermally demanding environments due to 175 C rating

PSMN5R0-100PS. N-channel 100 V 5 mω standard level MOSFET in TO-220. High efficiency due to low switching and conduction losses

N-channel TrenchMOS intermediate level FET. AEC Q101 compliant Suitable for standard and logic level gate drive sources

AEC Q101 compliant Low conduction losses due to low on-state resistance Suitable for standard level gate drive sources

PSMN022-30BL. N-channel 30 V 22.6 mω logic level MOSFET in D2PAK. High efficiency due to low switching and conduction losses

N-channel TrenchMOS logic level FET. High efficiency due to low switching and conduction losses

PSMN1R7-60BS. N-channel 60 V 2 mω standard level MOSFET in D2PAK. High efficiency due to low switching and conduction losses

PSMN018-80YS. N-channel LFPAK 80 V 18 mω standard level MOSFET

BUK758R3-40E. 1. Product profile. N-channel TrenchMOS standard level FET 11 September 2012 Product data sheet. 1.1 General description

PSMN3R0-60ES. High efficiency due to low switching and conduction losses Suitable for standard level gate drive sources

PSMN PS. N-channel 100V 16 mω standard level MOSFET in TO-220. High efficiency due to low switching and conduction losses

BUK7Y9R9-80E. 12 V, 24 V and 48 V Automotive systems Motors, lamps and solenoid control Transmission control Ultra high performance power switching

BUK7E1R9-40E. 1. General description. 2. Features and benefits. 3. Applications. 4. Quick reference data

BUK7Y3R5-40E. 12 V Automotive systems Motors, lamps and solenoid control Transmission control Ultra high performance power switching

BUK964R2-80E. 1. General description. 2. Features and benefits. 3. Applications. Quick reference data

PSMN1R1-40BS. N-channel 40 V 1.3 mω standard level MOSFET in D2PAK. High efficiency due to low switching and conduction losses

PSMN Y. 1. General description. 2. Features and benefits. 3. Applications. 4. Quick reference data

PSMN D. N-channel TrenchMOS SiliconMAX standard level FET

BUK7K32-100E. 12 V, 24 V and 48 V Automotive systems Motors, lamps and solenoid control Transmission control Ultra high performance power switching

BUK9Y8R5-80E. 12 V, 24 V and 48 V Automotive systems Motors, lamps and solenoid control Transmission control Ultra high performance power switching

PSMN1R7-30YL. N-channel 30 V 1.7 mω logic level MOSFET in LFPAK

BUK7K25-40E. 1. General description. 2. Features and benefits. 3. Applications. Quick reference data

PSMN BS. High efficiency due to low switching and conduction losses Suitable for standard level gate drive

12 V Automotive systems Motors, lamps and solenoid control Transmission control Ultra high performance power switching

12 V, 24 V and 48 V automotive systems Motors, lamps and solenoid control Transmission control Ultra high performance power switching

12 V Automotive systems Motors, lamps and solenoid control Transmission control Ultra high performance power switching

12 V automotive systems Motors, lamps and solenoid control Transmission control Ultra high performance power switching

PSMN1R5-30YL. N-channel 30 V 1.5 mω logic level MOSFET in LFPAK

12 V, 24 V and 48 V Automotive systems Motors, lamps and solenoid control Transmission control Ultra high performance power switching

BUK7K6R2-40E. 12 V Automotive systems Motors, lamps and solenoid control Transmission control Ultra high performance power switching

BUK9K30-80E. 1. General description. 2. Features and benefits. 3. Applications. 4. Quick reference data

12 V Automotive systems Motors, lamps and solenoid control Transmission control Ultra high performance power switching

PSMN3R9-60PS. High efficiency due to low switching & conduction losses Robust construction for demanding applications Standard level gate

PSMN011-60ML. 1. General description. 2. Features and benefits. 3. Applications. 4. Quick reference data

PSMN2R2-40PS. High efficiency due to low switching and conduction losses Suitable for standard level gate drive sources

PSMN YS. N-channel LFPAK 100V 27.5 mω standard level MOSFET

PSMN041-80YL. 1. General description. 2. Features and benefits. 3. Applications. Quick reference data

PSMN025-80YL. 1. General description. 2. Features and benefits. 3. Applications. Quick reference data

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

PSMN6R0-30YLB. N-channel 30 V 6.5 mω logic level MOSFET in LFPAK using NextPower technology

20 V, 800 ma dual N-channel Trench MOSFET

BUK9M43-100E. 1. General description. 2. Features and benefits. 3. Applications. 4. Quick reference data

BUK9K6R8-40E. 12 V Automotive systems Motors, lamps and solenoid control Transmission control Ultra high performance power switching

PSMN7R5-60YL. 1. General description. 2. Features and benefits. 3. Applications. 4. Quick reference data

60 V, 320 ma N-channel Trench MOSFET

PSMN2R0-30YLE. Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V DS drain-source voltage T j 25 C; T j 175 C V

N-channel TrenchMOS logic level FET

Dual P-channel intermediate level FET

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

30 V, 230 ma P-channel Trench MOSFET

40 V N-channel Trench MOSFET

20 V, 2 A P-channel Trench MOSFET

60 / 50 V, 330 / 170 ma N/P-channel Trench MOSFET

30 / 30 V, 350 / 200 ma N/P-channel Trench MOSFET. Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit TR2 (P-channel)

60 V, 340 ma dual N-channel Trench MOSFET

50 V, 160 ma dual P-channel Trench MOSFET

60 V, 310 ma N-channel Trench MOSFET

PSMN026-80YS. N-channel LFPAK 80 V 27.5 mω standard level MOSFET

BSS138AKA. 1. General description. 2. Features and benefits. 3. Applications. 4. Quick reference data

PMV250EPEA. 1. General description. 2. Features and benefits. 3. Applications. 4. Quick reference data

PSMN MSE. High power PoE applications (60W and higher) IEEE802.3at and proprietary solutions

Trench MOSFET technology Low threshold voltage Very fast switching Enhanced power dissipation capability: P tot = 1000 mw

NX3020NAK. 1. General description. 2. Features and benefits. 3. Applications. 4. Quick reference data

NX7002AK. 1. General description. 2. Features and benefits. 3. Applications. 4. Quick reference data

Logic level compatible Very fast switching Trench MOSFET technology ElectroStatic Discharge (ESD) protection > 2 kv HBM

20 V dual P-channel Trench MOSFET

20 V, single P-channel Trench MOSFET

20 V, dual P-channel Trench MOSFET. Charging switch for portable devices DC/DC converters Small brushless DC motor drive

Logic level compatible Very fast switching Trench MOSFET technology ElectroStatic Discharge (ESD) protection > 2 kv HBM AEC-Q101 qualified

PMPB27EP. 1. Product profile. 30 V, single P-channel Trench MOSFET 10 September 2012 Product data sheet. 1.1 General description

BUK A. N-channel TrenchMOS standard level FET. Symbol Parameter Conditions Min Typ Max Unit V DS drain-source T j 25 C; T j 175 C V

60 V, N-channel Trench MOSFET

Low power DC-to-DC converters Load switching Battery management Battery powered portable equipment

Trench MOSFET technology Low threshold voltage Enhanced power dissipation capability of 1200 mw ElectroStatic Discharge (ESD) protection: 2 kv HBM

Low threshold voltage Very fast switching Trench MOSFET technology ElectroStatic Discharge (ESD) protection > 2 kv HBM

PMXB360ENEA. Relay driver Power management in automotive and industrial applications LED driver DC-to-DC converter

Logic level compatible Very fast switching Trench MOSFET technology ElectroStatic Discharge (ESD) protection > 2 kv HBM AEC-Q101 qualified

PSMN3R5-30YL. High efficiency due to low switching and conduction losses Suitable for logic level gate drive sources

Relay driver Power management in automotive and industrial applications LED driver DC-to-DC converter

Logic level compatible Very fast switching Trench MOSFET technology ElectroStatic Discharge (ESD) protection > 2 kv HBM

PMZ950UPEL. 1. General description. 2. Features and benefits. 3. Applications. 4. Quick reference data

PMGD290UCEA. 1. General description. 2. Features and benefits. 3. Applications. Quick reference data

BUK7Y2R0-40H. 1. General description. 2. Features and benefits. 3. Applications. 4. Quick reference data

Transcription:

Rev. 2 26 April 211 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits AEC Q11 compliant Low conduction losses due to low on-state resistance 1.3 Applications Automotive and general purpose power switching 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V DS drain-source voltage T j 25 C; T j 175 C - - 1 V I D drain current T mb = 25 C - - 11 A P tot total power dissipation - - 54 W Static characteristics R DSon drain-source on-state V GS =1V; I D =5A; T j =25 C - 152 173 mω resistance V GS =5V; I D =5A; T j =25 C - 165 18 mω Avalanche ruggedness E DS(AL)S non-repetitive drain-source avalanche energy I D = 5.5 A; V sup 25 V; R GS =5Ω; V GS =5V; T j(init) = 25 C; unclamped - - 1.5 mj

2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate 2 D drain mb 3 S source mb D mounting base; connected to drain 2 1 3 SOT44 (D2PAK) 3. Ordering information D G mbb76 S Table 3. Ordering information Type number Package Name Description Version D2PAK plastic single-ended surface-mounted package (D2PAK); 3 leads (one lead cropped) SOT44 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 6134). Symbol Parameter Conditions Min Max Unit V DS drain-source voltage T j 25 C; T j 175 C - 1 V V DGR drain-gate voltage R GS =2kΩ - 1 V V GS gate-source voltage -15 15 V I D drain current T mb =25 C - 11 A T mb =1 C - 7.7 A I DM peak drain current T mb = 25 C; pulsed - 44 A P tot total power dissipation T mb =25 C - 54 W T stg storage temperature -55 175 C T j junction temperature -55 175 C Source-drain diode I S source current T mb =25 C - 11 A I SM peak source current pulsed; T mb =25 C - 44 A Avalanche ruggedness E DS(AL)S non-repetitive drain-source avalanche energy I D = 5.5 A; V sup 25 V; R GS =5Ω; V GS =5V; T j(init) = 25 C; unclamped - 1.5 mj Product data sheet Rev. 2 26 April 211 2 of 13

1 I D (%) 8 3aaf331 1 I D (%) 8 3aaf332 6 6 4 4 2 2 5 1 15 2 T mb ( C) 5 1 15 2 T mb ( C) Fig 1. Normalized total power dissipation as a function of mounting base temperature Fig 2. Normalized continuous drain current as a function of mounting base temperature 1 2 I DM (A) R DS(on) = V DS / I D 3aaf333 1 W DSS (%) 8 3aaf346 1 6 1 D.C. 4 2 Fig 3. 1 1 1 1 1 2 1 3 V DS (V) T mb = 25 C; I DM is single pulse Safe operating area; continuous and peak drain currents as a function of drain-source voltage Fig 4. 2 6 1 14 18 T mb ( C) I D = 75 A Normalised drain-source non-repetitive avalanche energy as a function of mounting-base temperature 1 2 3aaf347 l AV 1 T j prior to avalanche = 15 C 25 C Fig 5. 1 1 3 1 2 1 1 1 1 t AV (ms) unclamped inductive load Single-shot avalanche rating; avalanche current as a function of avalanche period Product data sheet Rev. 2 26 April 211 3 of 13

5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit R th(j-mb) thermal resistance from junction to - - 2.8 K/W mounting base R th(j-a) thermal resistance from junction to ambient minimum footprint ; FR4 board - 5 - K/W 1 Z th(j-mb) (K/W) δ =.5 1.2.1 1 1.5.2 P 3aaf334 t p δ = T 1 2 t p t T 1 3 1 6 1 5 1 4 1 3 1 2 1 1 1 t p (s) Fig 6. Transient thermal impedance from junction to mounting base as a function of pulse duration Product data sheet Rev. 2 26 April 211 4 of 13

6. Characteristics Table 6. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics V (BR)DSS drain-source breakdown I D =.25 ma; V GS =V; T j = 25 C 1 - - V voltage I D =.25 ma; V GS =V; T j = -55 C 89 - - V V GS(th) gate-source threshold I D =1mA; V DS =V GS ; T j = -55 C - - 2.3 V voltage I D =1mA; V DS =V GS ; T j =25 C 1 1.5 2 V I D =1mA; V DS =V GS ; T j = 175 C.5 - - V I DSS drain leakage current V DS =1V; V GS =V; T j = 175 C - - 5 µa V DS =1V; V GS =V; T j = 25 C -.5 1 µa I GSS gate leakage current V GS =1V; V DS =V; T j = 25 C - 2 1 na V GS =-1V; V DS =V; T j = 25 C - 2 1 na R DSon drain-source on-state V GS =5V; I D =5A; T j = 175 C - - 45 mω resistance V GS =4.5V; I D =5A; T j = 25 C - 17 2 mω V GS =1V; I D =5A; T j = 25 C - 152 173 mω V GS =5V; I D =5A; T j = 25 C - 165 18 mω Dynamic characteristics C iss input capacitance V GS =V; V DS =25V; f=1mhz; - 464 619 pf C oss output capacitance T j =25 C - 6 72 pf C rss reverse transfer capacitance - 37 5 pf t d(on) turn-on delay time V DS =3V; R L =1.2Ω; V GS =5V; - 9 2 ns t r rise time R G(ext) =1Ω; T j =25 C - 112 157 ns t d(off) turn-off delay time - 18 27 ns t f fall time - 25 38 ns L D internal drain inductance measured from drain lead 6 mm from - 4.5 - nh package to centre of die measured from upper edge of drain tab - 2.5 - nh to centre of die L S internal source inductance measured from source lead to source bond pad - 7.5 - nh Source-drain diode V SD source-drain voltage I S =5A; V GS =V; T j = 25 C -.85 1.2 V I S =11A; V GS =V; T j =25 C - 1.1 - V t rr reverse recovery time I S =11A; di S /dt = -1 A/µs; - 49 - ns Q r recovered charge V GS =-1V; V DS =3V; T j =25 C -.13 - µc Product data sheet Rev. 2 26 April 211 5 of 13

Fig 7. 25 I D (A) 2 15 1 V GS (V) = 1 3aaf335 5 4 3.8 5 2.8 2.2 2.6 2.4 2 4 6 8 1 V DS (V) T j = 25 C T j = 25 C Output characteristics: drain current as a function of drain-source voltage; typical values 3.6 3.4 3.2 3 Fig 8. 24 R DS(on) (mω) 2 16 3aaf336 12 2 4 6 8 1 12 I D (A) 3 Drain-source on-state resistance as a function of drain current; typical values 3.2 3.4 3.6 3.8 4 5 23 3aaf337 12 3aaf338 R DS(on) (mω) 21 I D (A) 8 19 17 4 T j = 175 C T j = 25 C Fig 9. 15 3 5 7 9 11 V GS (V) T j = 25 ; I D = 25 A Drain-source on-state resistance as a function of gate-source voltage; typical values 2 4 6 8 V GS (V) V DS > I D x R DSon Fig 1. Transfer characteristics: drain current as a function of gate-source voltage; typical values Product data sheet Rev. 2 26 April 211 6 of 13

g fs (S) 16 12 3aaf339 3 a 2.5 3aaf34 2 8 1.5 4 1 4 8 12 16 I D (A).5 1 1 2 T mb ( C) V DS > I D x R DSon Fig 11. Forward transconductance as a function of drain current; typical values I D = 25 A; V GS = 5 V Fig 12. Normalized drain-source on-state resistance factor as a function of junction temperature 2.5 V GS(th) (V) 2 maximum 3aaf341 1 1 I D (A) 1 2 3aaf342 1.5 typical 1 3 2 % typical 98 % 1 minimum 1 4.5 1 5 1 1 2 T j ( C) I D = 1 ma; V DS = V GS Fig 13. Gate-source threshold voltage as a function of junction temperature 1 6 1 2 3 V GS (V) T j = 25 C; V DS = V GS Fig 14. Sub-threshold drain current as a function of gate-source voltage Product data sheet Rev. 2 26 April 211 7 of 13

12 C (pf) C iss 3aaf343 5 V GS (V) 4 3aaf344 8 C oss 3 4 C rss 2 1 1 2 1 1 1 1 1 2 V DS (V) V GS = V; f = 1 MHz Fig 15. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values 2 4 6 8 1 Q G (nc) T j = 25 C; I D = 25 A Fig 16. Gate-source voltage as a function of gate charge; typical values 15 3aaf345 I F (A) 1 5 T j = 15 C T j = 25 C..4.8 1.2 V SDS (V) V GS = V Fig 17. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values Product data sheet Rev. 2 26 April 211 8 of 13

7. Package outline Plastic single-ended surface-mounted package (D2PAK); 3 leads (one lead cropped) SOT44 A E A 1 D 1 mounting base D H D 2 1 3 L p b c e e Q 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT mm A 4.5 4.1 D A 1 b c D max. 1 1.4 1.27.85.6.64.46 11 1.6 1.2 E e L p H D Q 1.3 9.7 2.54 2.9 2.1 15.8 14.8 2.6 2.2 OUTLINE VERSION REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE SOT44 5-2-11 6-3-16 Fig 18. Package outline SOT44 (D2PAK) Product data sheet Rev. 2 26 April 211 9 of 13

8. Revision history Table 7. Revision history Document ID Release date Data sheet status Change notice Supersedes v.2 211426 Product data sheet - BUK9518_9618-1A v.1 Modifications: The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. Legal texts have been adapted to the new company name where appropriate. Type number separated from data sheet BUK9518_9618-1A v.1. BUK9518_9618-1A v.1 251 Product specification - - Product data sheet Rev. 2 26 April 211 1 of 13

9. Legal information 9.1 Data sheet status Document status [1] [2] Product status [3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term 'short data sheet' is explained in section "Definitions". [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nexperia.com. 9.2 Definitions Preview The document is a preview version only. The document is still subject to formal approval, which may result in modifications or additions. Nexperia does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Draft The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. Nexperia does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local Nexperia sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Product specification The information and data provided in a Product data sheet shall define the specification of the product as agreed between Nexperia and its customer, unless Nexperia and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the Nexperia product is deemed to offer functions and qualities beyond those described in the Product data sheet. 9.3 Disclaimers Limited warranty and liability Information in this document is believed to be accurate and reliable. However, Nexperia does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. In no event shall Nexperia be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, Nexperia s aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of Nexperia. Right to make changes Nexperia reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use in automotive applications This Nexperia product has been qualified for use in automotive applications. The product is not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of a Nexperia product can reasonably be expected to result in personal injury, death or severe property or environmental damage. Nexperia accepts no liability for inclusion and/or use of Nexperia products in such equipment or applications and therefore such inclusion and/or use is at the customer s own risk. Quick reference data The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications Applications that are described herein for any of these products are for illustrative purposes only. Nexperia makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using Nexperia products, and Nexperia accepts no liability for any assistance with applications or customer product design. It is customer s sole responsibility to determine whether the Nexperia product is suitable and fit for the customer s applications and products planned, as well as for the planned application and use of customer s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. Nexperia does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer s applications or products, or the application or use by customer s third party customer(s). Customer is responsible for doing all necessary testing for the customer s applications and products using Nexperia products in order to avoid a default of the applications and the products or of the application or use by customer s third party customer(s). Nexperia does not accept any liability in this respect. Limiting values Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 6134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Product data sheet Rev. 2 26 April 211 11 of 13

Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale Nexperia products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nexperia.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. Nexperia hereby expressly objects to applying the customer s general terms and conditions with regard to the purchase of Nexperia products by customer. Export control This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. 9.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. No offer to sell or license Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 1. Contact information For more information, please visit: http://www.nexperia.com For sales office addresses, please send an email to: salesaddresses@nexperia.com Product data sheet Rev. 2 26 April 211 12 of 13

11. Contents 1 Product profile...........................1 1.1 General description......................1 1.2 Features and benefits.....................1 1.3 Applications............................1 1.4 Quick reference data.....................1 2 Pinning information.......................2 3 Ordering information......................2 4 Limiting values...........................2 5 Thermal characteristics...................4 6 Characteristics...........................5 7 Package outline..........................9 8 Revision history.........................1 9 Legal information........................11 9.1 Data sheet status....................... 11 9.2 Definitions............................. 11 9.3 Disclaimers............................ 11 9.4 Trademarks............................12 1 Contact information......................12 For more information, please visit: http://www.nexperia.com For sales office addresses, please send an email to: salesaddresses@nexperia.com Date of release: 26 April 211