September FG6N ual N-Channel, igital FET General escription Features These dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, MOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETs. 5,.5 A continuous,.5 A peak. R S(ON) =.45 Ω @ GS = 4.5, R S(ON) =.6 Ω @ GS =.7. ery low level gate drive requirements allowing direct operation in circuits ( GS(th) <.5 ). Gate-Source Zener for ES ruggedness (>6k Human Body Model). Compact industry standard SC7-6 surface mount package. SC7-6 SOT- SuperSOT TM -6 SuperSOT TM -8 SO-8 SOT- S G. or 4 * 6 or or 5 5 or SC7-6 G S or 6 4 or * * The pinouts are symmetrical; pin and 4 are interchangeable. Units inside the carrier can be of either orientation and will not affect the functionality of the device. Absolute Maximum Ratings T A = 5 C unless otherwise noted Symbol Parameter FG6N Units SS rain-source oltage 5 GSS Gate-Source oltage -.5 to +8 I rain/output Current - Continuous.5 A - Pulsed.5 P Maximum Power issipation (Note ). W,T STG Operating and Storage Temperature Range -55 to 5 C ES Electrostatic ischarge Rating MIL-ST-88 Human Body Model ( pf / 5 Ω) THERMAL CHARACTERISTICS 6. k R θja Thermal Resistance, Junction-to-Ambient 45 C/W FG6N Rev.F
Electrical Characteristics (T A = 5 O C unless otherwise noted ) Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS B SS rain-source Breakdown oltage GS =, I = 5 µa 5 B SS / Breakdown oltage Temp. Coefficient I = 5 µa, Referenced to 5 o C 6 m/ o C I SS Zero Gate oltage rain Current S =, GS = µa = 55 C µa I GSS Gate - Body Leakage Current GS = 8, S = na ON CHARACTERISTICS (Note ) GS(th) Gate Threshold oltage S = GS, I = 5 µa.65.8.5 GS(th) / Gate Threshold oltage Temp.Coefficient I = 5 µa, Referenced to 5 o C -.6 m/ o C R S(ON) Static rain-source On-Resistance GS = 4.5, I =.5 A.4.45 Ω =5 C.55.77 GS =.7, I =. A.44.6 I (ON) On-State rain Current GS =.7, S = 5.5 A g FS Forward Transconductance S = 5, I =.5 A.45 S YNAMIC CHARACTERISTICS C iss Input Capacitance S =, GS =, 5 pf C oss Output Capacitance f =. MHz 8 pf C rss Reverse Transfer Capacitance 9 pf SWITCHING CHARACTERISTICS (Note ) t (on) Turn - On elay Time = 5, I =.5 A, 6 ns t r Turn - On Rise Time GS = 4.5, R GEN = 5 Ω 8.5 8 ns t (off) Turn - Off elay Time 7 ns t f Turn - Off Fall Time 5 ns Q g Total Gate Charge S = 5, I =.5 A,.64. nc Q gs Gate-Source Charge GS = 4.5.8 nc Q gd Gate-rain Charge.45 nc RAIN-SOURCE IOE CHARACTERISTICS AN MAXIMUM RATINGS I S Maximum Continuous Source Current.5 A S rain-source iode Forward oltage GS =, I S =.5 A (Note ).8. Notes:. R θja is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R θjc is guaranteed by design while R θca is determined by the user's board design. R θja = 45 O C/W on minimum pad mounting on FR-4 board in still air.. Pulse Test: Pulse Width < µs, uty Cycle <.%. FG6N Rev.F
S S(ON) Typical Electrical Characteristics I, RAIN-SOURCE CURRENT (A).5..9.6. = 4.5 GS..7.5..5 R, NORMALIZE RAIN-SOURCE ON-RESISTANCE.5 =. GS.5.7..5 4.5.5.5.5 S, RAIN-SOURCE OLTAGE ().5..4.6.8. I, RAIN CURRENT (A) Figure. On-Region Characteristics. Figure. On-Resistance ariation with rain Current and Gate oltage. R S(ON), NORMALIZE RAIN-SOURCE ON-RESISTANCE.6.4..8 I =.5A GS = 4.5.6-5 -5 5 5 75 5 5 T, JUNCTION TEMPERATURE ( C) J R S(on), ON-RESISTANCE (OHM).6..8.4 T = 5 C A T = 5 C A.5.5.5 4 4.5 5 GS, GATE TO SOURCE OLTAGE () I =.A Figure. On-Resistance ariation with Temperature. Figure 4. On-Resistance ariation with Gate-to-Source oltage. I, RAIN CURRENT (A).8.6.4. = 5. S T = -55 C J 5 C 5 C I, REERSE RAIN CURRENT (A)... GS = T = 5 C J 5 C -55 C.5.5.5 GS, GATE TO SOURCE OLTAGE ()...4.6.8. S, BOY IOE FORWAR OLTAGE () Figure 5. Transfer Characteristics. Figure 6. Body iode Forward oltage ariation with Source Current and Temperature. FG6N Rev.F
Typical Electrical Characteristics (continued) GS, GATE-SOURCE OLTAGE () 5 4 I =.5A.4.8..6 Q g, GATE CHARGE (nc) S = 5 5 CAPACITANCE (pf) 7 f = MHz GS =.. 5 5 S, RAIN TO SOURCE OLTAGE () C iss C oss C rss Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics. I, RAIN CURRENT (A).5...5. RS(ON) LIMIT GS = 4.5 SINGLE PULSE R θja = 45 C/W T A= 5 C.. 5 5 4 s C s ms, RAI N-SOURCE OLTAGE () S ms ms POWER (W) 5 4.... SINGLE PULSE TIME (SEC) SINGLE PULSE R θja=45 C/W T A= 5 C Figure 9. Maximum Safe Operating Area. Figure. Single Pulse Maximum Power issipation. r(t), NORMALIZE EFFECTIE TRANSIENT THERMAL RESISTANCE.5...5...5 =.5...5.. Single Pulse..... t, TIME (sec) P(pk) R θja (t) = r(t) * R θja R θja =45 C/W t t - T A = P * R θja (t) uty Cycle, = t / t Figure. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in note. Transient thermal response will change depending on the circuit board design. FG6N Rev.F
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