VS-18TQ035SPbF, VS-18TQ040SPbF, VS-18TQ045SPbF High Performance Schottky Rectifier, 18 A

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VS-18TQ035SPbF, VS-18TQ040SPbF, VS-18TQ045SPbF www.vishay.com High Performance Schottky Rectifier, 18 D 2 PK ase cathode 2 1 3 N/C node PRODUCT SUMMRY Package D 2 PK I F(V) 18 V R 35 V, 40 V, 45 V V F at I F 0.53 V I RM 25 m at 125 C T J max. 175 C Diode variation Single die E S 24 mj FETURES 175 C T J operation Low forward voltage drop High frequency operation High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Guard ring for enhanced ruggedness and long term reliability Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C EC-Q101 qualified Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION The VS-18TQ... Schottky rectifier series has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 175 C junction temperature. Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection. MJOR RTINGS ND CHRCTERISTICS SYMOL CHRCTERISTICS VLUES UNITS I F(V) Rectangular waveform 18 V RRM Range 35 to 45 V I FSM t p = 5 μs sine 1800 V F 18 pk, T J = 125 C 0.53 V T J Range -55 to +175 C VOLTGE RTINGS PRMETER SYMOL VS-18TQ035SPbF VS-18TQ040SPbF VS-18TQ045SPbF UNITS Maximum DC reverse voltage V R Maximum working peak reverse voltage V RWM 35 40 45 V SOLUTE MXIMUM RTINGS PRMETER SYMOL TEST CONDITIONS VLUES UNITS Maximum average forward current See fig. 5 I F(V) 50 % duty cycle at T C = 149 C, rectangular waveform 18 Maximum peak one cycle non-repetitive surge current See fig. 7 5 μs sine or 3 μs rect. pulse Following any rated 1800 load condition and I FSM with rated V 10 ms sine or 6 ms rect. pulse RRM 390 applied Non-repetitive avalanche energy E S T J = 25 C, I S = 3.6, L = 3.7 mh 24 mj Current decaying linearly to zero in 1 μs Repetitive avalanche current I R 3.6 Frequency limited by T J maximum V = 1.5 x V R typical Revision: 23-May-14 1 Document Number: 94150 For technical questions within your region: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUJECT TO CHNGE WITHOUT NOTICE. THE PRODUCTS DESCRIED HEREIN ND THIS DOCUMENT RE SUJECT TO SPECIFIC DISCLIMERS, SET FORTH T www.vishay.com/doc?91000

VS-18TQ035SPbF, VS-18TQ040SPbF, VS-18TQ045SPbF www.vishay.com ELECTRICL SPECIFICTIONS PRMETER SYMOL TEST CONDITIONS VLUES UNITS Maximum forward voltage drop See fig. 1 Note (1) Pulse width < 300 μs, duty cycle < 2 % V FM (1) 18 0.60 T J = 25 C 36 0.72 18 0.53 T J = 125 C 36 0.67 Maximum reverse leakage current T J = 25 C 2.5 I See fig. 2 RM V R = Rated V R T J = 125 C 25 m Maximum junction capacitance C T V R = 5 V DC (test signal range 100 khz to 1 MHz), 25 C 1400 pf Typical series inductance L S Measured lead to lead 5 mm from package body 8.0 nh Maximum voltage rate of change dv/dt Rated V R 10 000 V/μs V THERML - MECHNICL SPECIFICTIONS PRMETER SYMOL TEST CONDITIONS VLUES UNITS Maximum junction and storage temperature range T J, T Stg -55 to +175 C Maximum thermal resistance, junction to case Typical thermal resistance, case to heatsink pproximate weight R thjc DC operation See fig. 4 1.50 R thcs Mounting surface, smooth and greased 0.50 C/W 2 g 0.07 oz. Mounting torque Marking device minimum 6 (5) kgf cm maximum 12 (10) (lbf in) Case style D 2 PK 18TQ035S 18TQ040S 18TQ045S Revision: 23-May-14 2 Document Number: 94150 For technical questions within your region: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUJECT TO CHNGE WITHOUT NOTICE. THE PRODUCTS DESCRIED HEREIN ND THIS DOCUMENT RE SUJECT TO SPECIFIC DISCLIMERS, SET FORTH T www.vishay.com/doc?91000

VS-18TQ035SPbF, VS-18TQ040SPbF, VS-18TQ045SPbF www.vishay.com I F - Instantaneous Forward Current () 1000 100 10 1 T J = 175 C T J = 125 C T J = 25 C 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 I R - Reverse Current (m) 1000 T J = 175 C 100 T J = 150 C 10 T J = 125 C 1 T J = 100 C 0.1 T J = 75 C 0.01 T J = 50 C 0.001 T J = 25 C 0.0001 0 5 10 15 20 25 30 35 40 45 V FM - Forward Voltage Drop (V) V R - Reverse Voltage (V) Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage 10 000 C T - Junction Capacitance (pf) 1000 T J = 25 C 100 0 10 20 30 40 50 V R - Reverse Voltage (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage Z thjc - Thermal Impedance ( C/W) 10 1 0.1 0.01 D = 0.50 D = 0.33 D = 0.25 D = 0.17 D = 0.08 Single pulse. (thermal resistance) 2. Peak T J = P DM x Z thjc + T C. 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 t 1 - Rectangular Pulse Duration (s) P DM Notes: 1. Duty factor D = t 1 /t 2 t 1 t 2 Fig. 4 - Maximum Thermal Impedance Z thjc Characteristics Revision: 23-May-14 3 Document Number: 94150 For technical questions within your region: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUJECT TO CHNGE WITHOUT NOTICE. THE PRODUCTS DESCRIED HEREIN ND THIS DOCUMENT RE SUJECT TO SPECIFIC DISCLIMERS, SET FORTH T www.vishay.com/doc?91000

VS-18TQ035SPbF, VS-18TQ040SPbF, VS-18TQ045SPbF www.vishay.com llowable Case Temperature ( C) 180 175 170 165 160 155 DC 18TQ R thjc (DC) = 1.50 C/W 150 0 4 8 12 16 20 24 28 verage Power Loss (W) 15 10 5 D = 0.08 D = 0.17 D = 0.25 D = 0.33 D = 0.50 DC RMS limit 0 0 4 8 12 16 20 24 28 I F(V) - verage Forward Current () I F(V) - verage Forward Current () Fig. 5 - Maximum llowable Case Temperature vs. verage Forward Current Fig. 6 - Forward Power Loss Characteristics I FSM - Non-Repetitive Surge Current () 10 000 t any rated load condition and with rated V applied following surge RRM 1000 100 10 100 1000 10 000 t p - Square Wave Pulse Duration (µs) Fig. 7 - Maximum Non-Repetitive Surge Current L D.U.T. IRFP460 High-speed switch Current monitor R g = 25 Ω Freewheel diode 40HFL40S02 + V d = 25 V Fig. 8 - Unclamped Inductive Test Circuit Revision: 23-May-14 4 Document Number: 94150 For technical questions within your region: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUJECT TO CHNGE WITHOUT NOTICE. THE PRODUCTS DESCRIED HEREIN ND THIS DOCUMENT RE SUJECT TO SPECIFIC DISCLIMERS, SET FORTH T www.vishay.com/doc?91000

www.vishay.com ORDERING INFORMTION TLE VS-18TQ035SPbF, VS-18TQ040SPbF, VS-18TQ045SPbF Device code VS- 18 T Q 045 S TRL PbF 1 2 3 4 5 6 7 8 1 - product 2 - Current rating (18 ) 3 - Circuit configuration: T = TO-220 4 - Schottky Q series 035 = 35 V 5 - Voltage ratings 040 = 40 V 6 - S = D 2 PK 045 = 45 V 7 - None = tube (50 pieces) TRL = tape and reel (left oriented) TRR = tape and reel (right oriented) 8 - PbF = lead (Pb)-free LINKS TO RELTED DOCUMENTS Dimensions Part marking information Packaging information SPICE model www.vishay.com/doc?95014 www.vishay.com/doc?95008 www.vishay.com/doc?95032 www.vishay.com/doc?95280 Revision: 23-May-14 5 Document Number: 94150 For technical questions within your region: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUJECT TO CHNGE WITHOUT NOTICE. THE PRODUCTS DESCRIED HEREIN ND THIS DOCUMENT RE SUJECT TO SPECIFIC DISCLIMERS, SET FORTH T www.vishay.com/doc?91000

Outline Dimensions Vishay High Power Products D 2 PK, TO-262 DIMENSIONS FOR D 2 PK in millimeters and inches Conforms to JEDEC outline D 2 PK (SMD-220) (3) L1 (2)(3) E 4 c2 (E) (D1) (3) Pad layout 11.00 MIN. (0.43) 9.65 MIN. (0.38) D L2 2 x e 1 2 3 H (2) 2 x b2 2 x b C Detail 0.010 M M c ± 0.004 M E1 View - H (3) 17.90 (0.70) 15.00 (0.625) 2.32 MIN. (0.08) Plating 2.64 (0.103) 2.41 (0.096) (4) b1, b3 3.81 MIN. (0.15) ase Metal Gauge plane Lead assignments Diodes 1. - node (two die)/open (one die) 2., 4. - Cathode 3. - node Lead tip 0 to 8 L3 L L4 Detail Rotated 90 CW Scale: 8:1 1 Seating plane (c) (b, b2) Section - and C - C Scale: None c1 (4) SYMOL MILLIMETERS INCHES MILLIMETERS INCHES NOTES SYMOL MIN. MX. MIN. MX. MIN. MX. MIN. MX. NOTES 4.06 4.83 0.160 0.190 D1 6.86 8.00 0.270 0.315 3 1 0.00 0.254 0.000 0.010 E 9.65 10.67 0.380 0.420 2, 3 b 0.51 0.99 0.020 0.039 E1 7.90 8.80 0.311 0.346 3 b1 0.51 0.89 0.020 0.035 4 e 2.54 SC 0.100 SC b2 1.14 1.78 0.045 0.070 H 14.61 15.88 0.575 0.625 b3 1.14 1.73 0.045 0.068 4 L 1.78 2.79 0.070 0.110 c 0.38 0.74 0.015 0.029 L1-1.65-0.066 3 c1 0.38 0.58 0.015 0.023 4 L2 1.27 1.78 0.050 0.070 c2 1.14 1.65 0.045 0.065 L3 0.25 SC 0.010 SC D 8.51 9.65 0.335 0.380 2 L4 4.78 5.28 0.188 0.208 Notes (1) Dimensioning and tolerancing per SME Y14.5 M-1994 (2) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outmost extremes of the plastic body (3) Thermal pad contour optional within dimension E, L1, D1 and E1 (4) Dimension b1 and c1 apply to base metal only (5) Datum and to be determined at datum plane H (6) Controlling dimension: inch (7) Outline conforms to JEDEC outline TO-263 Document Number: 95014 For technical questions concerning discrete products, contact: diodes-tech@vishay.com www.vishay.com Revision: 31-Mar-09 For technical questions concerning module products, contact: ind-modules@vishay.com 1

Outline Dimensions Vishay High Power Products D 2 PK, TO-262 DIMENSIONS FOR TO-262 in millimeters and inches Modified JEDEC outline TO-262 (Datum ) (2) (3) E (3) L1 c2 E D Seating plane D1(3) L2 1 2 C 3 C L (2) 2 x e 0.010 M M Lead tip 3 x b2 3 x b c Lead assignments 1 Diodes 1. - node (two die)/open (one die) 2., 4. - Cathode 3. - node Plating c E1 Section - (4) ase b1, b3 metal (b, b2) (3) c1 (4) Section - and C - C Scale: None SYMOL MILLIMETERS INCHES MIN. MX. MIN. MX. NOTES 4.06 4.83 0.160 0.190 1 2.03 3.02 0.080 0.119 b 0.51 0.99 0.020 0.039 b1 0.51 0.89 0.020 0.035 4 b2 1.14 1.78 0.045 0.070 b3 1.14 1.73 0.045 0.068 4 c 0.38 0.74 0.015 0.029 c1 0.38 0.58 0.015 0.023 4 c2 1.14 1.65 0.045 0.065 D 8.51 9.65 0.335 0.380 2 D1 6.86 8.00 0.270 0.315 3 E 9.65 10.67 0.380 0.420 2, 3 E1 7.90 8.80 0.311 0.346 3 e 2.54 SC 0.100 SC L 13.46 14.10 0.530 0.555 L1-1.65-0.065 3 L2 3.56 3.71 0.140 0.146 Notes (1) Dimensioning and tolerancing as per SME Y14.5M-1994 (2) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outmost extremes of the plastic body (3) Thermal pad contour optional within dimension E, L1, D1 and E1 (4) Dimension b1 and c1 apply to base metal only (5) Controlling dimension: inches (6) Outline conform to JEDEC TO-262 except 1 (maximum), b (minimum) and D1 (minimum) where dimensions derived the actual package outline www.vishay.com For technical questions concerning discrete products, contact: diodes-tech@vishay.com Document Number: 95014 2 For technical questions concerning module products, contact: ind-modules@vishay.com Revision: 31-Mar-09

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