Schottky Rectifier, 8 A 8TQ8SPbF, 8TQSPbF D 2 PAK PRODUCT SUMMARY I F(AV) V R Base cathode 2 3 N/C Anode 8 A 8 V/ V FEATURES 75 C operation Low forward voltage drop High frequency operation High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Guard ring for enhanced ruggedness and long term reliability Compliant to RoHS directive 22/95/EC Halogen-free according to IEC 6249-2-2 definition AEC-Q qualified DESCRIPTION The 8TQ... Schottky rectifier series has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 75 C junction temperature. Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS I F(AV) Rectangular waveform 8 A V RRM Range 8/ V I FSM t p = 5 µs sine 85 A V F 8 Apk, = 25 C.58 V Range - 55 to 75 C VOLTAGE RATINGS PARAMETER SYMBOL 8TQ8SPbF 8TQSPbF UNITS Maximum DC reverse voltage V R Maximum working peak reverse voltage V RWM 8 V ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum average forward current See fig. 5 I F(AV) 5 % duty cycle at T C = 57 C, rectangular waveform 8 A Maximum peak one cycle 5 µs sine or 3 µs rect. pulse Following any rated load 85 non-repetitive surge current I FSM condition and with rated A See fig. 7 ms sine or 6 ms rect. pulse V RRM applied 23 Non-repetitive avalanche energy E AS = 25 C, I AS =.5 A, L = 6 mh 7.5 mj Current decaying linearly to zero in µs Repetitive avalanche current I AR Frequency limited by maximum V A =.5 x V R typical.5 A * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 94266 For technical questions, contact: diodestech@vishay.com www.vishay.com Revision: 9-Sep-9
8TQ8SPbF, 8TQSPbF Schottky Rectifier, 8 A ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum forward voltage drop See fig. Note () Pulse width < 3 µs, duty cycle < 2 % V FM () 8 A.72 = 25 C 6 A.88 8 A.58 = 25 C 6 A.69 Maximum reverse leakage current = 25 C.55 I () RM V R = Rated V R See fig. 2 = 25 C 7 ma Maximum junction capacitance C T V R = 5 V DC (test signal range khz to MHz) 25 C 5 pf Typical series inductance L S Measured lead to lead 5 mm from package body 8 nh Maximum voltage rate of change dv/dt Rated V R V/µs V THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum junction and storage temperature range, T Stg - 55 to 75 C Maximum thermal resistance, junction to case Typical thermal resistance, case to heatsink Approximate weight R thjc DC operation See fig. 4 R thcs Mounting surface, smooth and greased.5 2. C/W 2 g.7 oz. minimum 6 (5) kgf cm Mounting torque maximum 2 () (lbf in) Marking device Case style D 2 PAK 8TQS www.vishay.com For technical questions, contact: diodestech@vishay.com Document Number: 94266 2 Revision: 9-Sep-9
Schottky Rectifier, 8 A 8TQ8SPbF, 8TQSPbF = 75 C I F - Instantaneous Forward Current (A) = 75 C = 25 C = 25 C I R - Reverse Current (ma)... = 5 C = 25 C = C = 75 C = 5 C = 25 C..2.4.6.8..2.4.6.8 2. 2.2 V FM - Forward Voltage Drop (V) Fig. - Maximum Forward Voltage Drop Characteristics. 2 4 6 8 V R - Reverse Voltage (V) Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage C T - Junction Capacitance (pf) = 25 C 2 3 4 5 6 7 8 9 V R - Reverse Voltage (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage Z thjc - Thermal Impedance ( C/W) Single pulse (thermal resistance) D =.75 D =.5 D =.33 D =.25 D =.2..... t - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance Z thjc Characteristics Document Number: 94266 For technical questions, contact: diodestech@vishay.com www.vishay.com Revision: 9-Sep-9 3
8TQ8SPbF, 8TQSPbF Schottky Rectifier, 8 A Allowable Case Temperature ( C) 8 75 7 65 6 55 5 45 4 Square wave (D =.5) 8 % rated V R applied See note () DC 2 4 6 8 2 Average Power Loss (W) 7 6 5 4 3 2 D =.2 D =.25 D =.33 D =.5 D =.75 DC RMS limit 2 4 6 8 2 I F(AV) - Average Forward Current (A) I F(AV) - Average Forward Current (A) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current Fig. 6 - Forward Power Loss Characteristics I FSM - Non-Repetitive Surge Current (A) At any rated load condition and with rated V RRM applied following surge t p - Square Wave Pulse Duration (µs) Fig. 7 - Maximum Non-Repetitive Surge Current L D.U.T. IRFP46 High-speed switch Current monitor R g = 25 Ω Freewheel diode 4HFL4S2 + V d = 25 V Fig. 8 - Unclamped Inductive Test Circuit Note () Formula used: T C = - (Pd + Pd REV ) x R thjc ; Pd = Forward power loss = I F(AV) x V FM at (I F(AV) /D) (see fig. 6); Pd REV = Inverse power loss = V R x I R ( - D); I R at V R = 8 % rated V R www.vishay.com For technical questions, contact: diodestech@vishay.com Document Number: 94266 4 Revision: 9-Sep-9
Schottky Rectifier, 8 A 8TQ8SPbF, 8TQSPbF ORDERING INFORMATION TABLE Device code 8 T Q S TRL PbF 2 3 4 5 6 7 - Current rating (8 A) 2 - Circuit configuration: T = TO-22 3 - Schottky Q series 4 - Voltage ratings 5 - S = D 2 PAK 6 - None = Tube (5 pieces) 8 = 8 V = V TRL = Tape and reel (left oriented) TRR = Tape and reel (right oriented) 7 None = Standard production PbF = Lead (Pb)-free Dimensions Part marking information Packaging information SPICE models LINKS TO RELATED DOCUMENTS www.vishay.com/doc?9546 www.vishay.com/doc?9554 www.vishay.com/doc?9532 www.vishay.com/doc?9529 Document Number: 94266 For technical questions, contact: diodestech@vishay.com www.vishay.com Revision: 9-Sep-9 5
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