High Performance Schottky Rectifier, A VS-BGQ030 Cathode Anode PowerTab PRODUCT SUMMARY Package PowerTab I F(AV) A V R 30 V V F at I F 0.56 V I RM 460 ma at 25 C T J max. 50 C Diode variation Single die E AS 9 mj FEATURES 50 C max. operating junction temperature High frequency operation Ultralow forward voltage drop Continuous high current operation Guard ring for enhanced ruggedness and long term reliability Screw mounting only Designed and qualified according to JEDEC -JESD 47 PowerTab package Material categorization: for definitions of compliance please see www.vishay.com/doc?9992 DESCRIPTION The VS-BGQ030 Schottky rectifier has been optimized for ultralow forward voltage drop specifically for low voltage output in high current AC/DC power supplies. The proprietary barrier technology allows for reliable operation up to 50 C junction temperature. Typical applications are in switching power supplies, converters, reverse battery protection, and redundant power subsystems. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS I F(AV) T C 06 C Rectangular waveform A V RRM 30 V I FSM t p = 5 μs sine 4500 A V F T J 50 C A pk (typical) 0.49 V T J Range -55 to +50 C VOLTAGE RATINGS PARAMETER SYMBOL BGQ030 UNITS Maximum DC reverse voltage V R Maximum working peak reverse voltage V RWM 30 V ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum average forward current I F(AV) 50 % duty cycle at T C = 06 C, rectangular waveform A Maximum peak one cycle 5 μs sine or 3 μs rect. pulse Following any rated load 4500 I FSM condition and with rated A non-repetitive surge current 0 ms sine or 6 ms rect. pulse V RRM applied 850 Non-repetitive avalanche energy E AS, I AS = 8 A, L =.2 mh 36 mj Current decaying linearly to zero in μs Repetitive avalanche current I AR 8 A Frequency limited by T J maximum V A =.5 x V R typical Revision: 2-Jun-5 Document Number: 94579 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?90
VS-BGQ030 ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS TYP. MAX. UNITS Forward voltage drop V FM () Note () Pulse width < 300 μs, duty cycle < 2 % 50 A 0.47 0.5 A 0.56 0.63 50 A 0.36 0.4 T J = 50 C A 0.49 0.56, V R = 5 V 80 60 T J = 50 C, V R = 30 V 800 Reverse leakage current I () RM ma 0.6 2.4 V R = Rated V R 260 460 Maximum junction capacitance C T V R = 5 V DC, (test signal range khz to MHz) 25 C 3800 pf Typical series inductance L S Measured from tab to mounting plane 3.5 nh Maximum voltage rate of change dv/dt Rated V R 0 000 V/μs V THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum junction and storage temperature range T J, T Stg -55 to +50 C Maximum thermal resistance, junction to case R thjc DC operation 0.50 Typical thermal resistance, case to heatsink R thcs Mounting surface, smooth and greased 0.30 C/W Approximate weight 5 g 0.8 oz. minimum.2 (0) N m Mounting torque maximum 2.4 (20) (lbf in) Marking device Case style PowerTab BGQ030 I F - Instantaneous Forward Current (A) 0 0 T J = 50 C 0.0 0.2 0.4 0.6 0.8.0.2 I R - Reverse Current (ma) 0 0 0. 0.0 50 C 25 C C 75 C 50 C 25 C 0 5 0 5 20 25 30 V FM - Forward Voltage Drop (V) V R - Reverse Voltage (V) Fig. - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Revision: 2-Jun-5 2 Document Number: 94579 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?90
VS-BGQ030 0 000 C T - Junction Capacitance (pf) 0 0 5 0 5 20 25 30 35 V R - Reverse Voltage (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage Z thjc - Thermal Impedance ( C/W) 0. D = 0.75 D = 0.5 D = 0.33 D = 0.25 D = 0.2 Single Pulse (Thermal Resistance) 0.0 E-05 E-04 E-03 E-02 E-0 E+00 t - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance Z thjc Characteristics Allowable Case Temperature ( C) 60 40 20 80 60 Square wave (D = 0.50) 80 % rated V R applied see note () DC 40 0 20 40 60 80 20 40 60 Average Power Loss (W) 80 60 40 20 0 80 20 90 60 30 RMS Limit DC 0 30 60 90 20 50 I F(AV) - Average Forward Current (A) I F(AV) - Average Forward Current (A) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current Fig. 6 - Forward Power Loss Characteristics Revision: 2-Jun-5 3 Document Number: 94579 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?90
VS-BGQ030 I FSM - Non-Repetitive Surge Current (A) 0 000 0 At Any Rated Load Condition And With Rated V RRM Applied Following Surge 0 0 0 000 t p - Square Wave Pulse Duration (μs) Fig. 7 - Maximum Non-Repetitive Surge Current L D.U.T. IRFP460 High-speed switch Current monitor R g = 25 Ω Freewheel diode 40HFL40S02 + V d = 25 V Fig. 8 - Unclamped Inductive Test Circuit Note (2) Formula used: T C = T J - (Pd + Pd REV ) x R thjc ; Pd = Forward power loss = I F(AV) x V FM at (I F(AV) /D) (see fig. 6); Pd REV = Inverse power loss = V R x I R ( - D); I R at V R = 80 % rated V R ORDERING INFORMATION TABLE Device code VS- BGQ 030 2 3 4 2 3 - product - Current rating - Essential part number 4 - Voltage code = V RRM Dimensions Part marking information Application note LINKS TO RELATED DOCUMENTS www.vishay.com/doc?95240 www.vishay.com/doc?95370 www.vishay.com/doc?9579 Revision: 2-Jun-5 4 Document Number: 94579 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?90
Outline Dimensions PowerTab DIMENSIONS in millimeters (inches) 8.54 (0.34) 8.20 (0.32) 4.70 (0.9) 4.50 (0.8) 5.90 (0.62) 5.60 (0.6) 5.60 (0.6) 4.80 (0.58).35 (0.05).20 (0.04) 2.40 (0.48) 2.0 (0.47) Lead Lead 2 8.25 (0.7) 8.00 (0.70) Ø 4.20 (Ø 0.6) Ø 4.00 (Ø 0.5) 27.65 (.08) 27.25 (.07) 39.8 (.56) 39.6 (.55) Ø 4.20 (Ø 0.6) Ø 4.00 (Ø 0.5) 4.95 (0.9) 4.75 (0.8) 5.45 REF. (0.2 REF.) 5.20 (0.20) 4.95 (0.9) Lead assignments 3.09 (0.2) 3.00 (0.) 0.60 (0.02) 0.40 (0.0).30 (0.05).0 (0.04) 2.20 (0.48) 2.00 (0.47) Lead = Cathode Lead 2 = Anode Revision: 08-Jun-5 Document Number: 95240 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?90
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