SK97 Silicon N-Channel MOS FET Application High speed power switching Features Low on-resistance High speed switching Low drive current 4 V gate drive device Can be driven from V source Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline TO-9 Mod D 1 G 1. Source. Drain. Gate S
SK97 Absolute Maximum Ratings (Ta = C) Item Symbol Ratings Unit Drain to source voltage V DSS 6 V Gate to source voltage V GSS ± V Drain current I D 1. A Drain peak current I D(pulse) * 1 4. A Body to drain diode reverse drain current I DR 1. A Channel dissipation Pch 9 mw Channel temperature Tch 1 C Storage temperature Tstg to +1 C Note: 1. PW 1 µs, duty cycle 1% Electrical Characteristics (Ta = C) Item Symbol Min Typ Max Unit Test conditions Drain to source breakdown V (BR)DSS 6 V I D = 1 ma, V GS = voltage Gate to source breakdown voltage V (BR)GSS ± V I G = ±1 µa, V DS = Gate to source leak current I GSS ±1 µa V GS = ±16 V, V DS = Zero gate voltage drain current I DSS 1 µa V DS = V, V GS = Gate to source cutoff voltage V GS(off). V I D = 1 ma, V DS = 1 V Static drain to source on state resistance R DS(off)..4 Ω I D = 1 A, V GS = 1 V * 1.4. Ω I D = 1 A, V GS = 4 V * 1 Forward transfer admittance yfs.9 1. S I D = 1 A, V DS = 1 V * 1 Input capacitance Ciss 14 pf V DS = 1 V, V GS =, Output capacitance Coss 7 pf f = 1 MHz Reverse transfer capacitance Crss pf Turn-on delay time t d(on) ns I D = 1 A, V GS = 1 V, Rise time t r 1 ns R L = Ω Turn-off delay time t d(off) ns Fall time t f ns Body to drain diode forward voltage Body to drain diode reverse recovery time Note: 1. Pulse test V DF.9 V I F = 1. A, V GS = t rr 4 ns I F = 1. A, V GS =, di F /dt = A/µs
SK97 Channel Dissipation Pch (W) 1.. Power vs. Temperature Derating 1..1. Maximum Safe Operation Area Ta = C DC Operation Operation in this area is limited by R DS (on) 1 µs PW = 1 ms (1 Shot) 1 ms 1 µs 1 Case Temperature T C ( C) 1.1.1. 1 1 Drain to Source Voltage V DS (V) 4 1 Typical Output Characteristics 1 V 4. V V 7 V 4 V. V V V GS =. V 4 1 Typical Transfer Characteristics V DS = 1 V 7 C C T C = C 4 6 8 1 Drain to Source Voltage V DS (V) 1 4 Gate to Source Voltage V GS (V)
SK97 Drain to Source Saturation Voltage V DS (on) (V).8.6.4. Drain to Source Saturation Voltage vs. Gate to Source Voltage I D =. A A 1 A 4 6 8 1 Gate to Source Voltage V GS (V) Static Drain to Source on State Resistance R DS (on) (Ω)...1.. Static Drain to Source On State Resistance vs. Drain Current V GS = 4 V 1 V.1.. Static Drain to Source on State Resistance R DS (on) (Ω).8.6.4. 4 Static Drain to Source on State Resistance vs. Temperature I D = A 1 A. A V GS = 4 V V GS = 1 V A 4 8 1 Case Temperature T C ( C). A 1 A 16 Forward Transfer Admittance yfs (S)...1 Forward Transfer Admittance vs. Drain Current V DS = 1 V C T C = C 7 C...1.. 4
SK97 Reverse Recovery Time t rr (ns) 1 1 Body to Drain Diode Reverse Recovery Time di/dt = A/µs, Ta = C V GS = Capacitance C (pf) 1 1 1 Typical Capacitance vs. Drain to Source Voltage Ciss Coss Crss V GS = f = 1 MHz 1..1.. Reverse Drain Current I DR (A) 1 1 4 Drain to Source Voltage V DS (V) Drain to Source Voltage V DS (V) 1 8 6 4 V DS Dynamic Input Characteristics V DD = V V DD = V V 1 V V 1 V V GS I D = 1. A 4 6 8 Gate Charge Qg (nc) 16 1 8 4 1 Gate to Source Voltage V GS (V) Switching Time t (ns) 1 1 Switching Characteristics t d (off) t f V GS = 1 V V DD = V PW = µs, duty < 1 % t d (on) 1..1.. t r
SK97. Reverse Drain Current vs. Source to Drain Voltage Reverse Drain Current I DR (A) 1.6 1..8.4 1 V 1 V V V GS =, V.4.8 1. 1.6. Source to Drain Voltage V SD (V) 6
Hitachi Code JEDEC EIAJ Weight (reference value) TO-9 Mod Conforms. g Unit: mm 4.8 ±..8 ±. 8. ±..6 ±.1.7 Max.6 Max. ±.1.7. Max 1.1 Min. 1.7.4
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