DATA SHEET. InGaAsP MQW DC-PBH PULSED LASER DIODE MODULE nm OTDR APPLICATION

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DATA SHEET LASER DIODE NDL7510P InGaAsP MQW DC-PBH PULSED LASER DIODE MODULE 1 310 nm OTDR APPLICATION DESCRIPTION The NDL7510P is a 1 310 nm laser diode DIP module with single mode fiber and internal thermoelectric cooler. It has a Multiple Quantum Well (MQW) structure and is designed for light source of optical measurement equipment (OTDR). FEATURES High output power Pf = 55 mw @ IFP = 400 ma, PW = 10 µs, Duty = 1 % Long wavelength λc = 1 310 nm Wide operating temperature range TC = 20 to +65 C Internal thermoelectric cooler, thermistor Hermetically sealed 14-pin Dual-In-Line Package Single mode fiber pigtail PACKAGE DIMENSIONS in millimeters 1.0 20.84 15.0 8.0 5.1 2 3.2±0.2 #8 BOTTOM VIEW #14 25.4 12.5 7.62 19.1 LD Thermistor Case Cooler #7 #1 + 12.16 1.0 10.2 2.54 6.25 0.45 5.1 6.0 3.0 0.9 Optical Fiber SM-9/125, Length: 1 m TYP. 8.1 Pin No. 1 2 3 4 5 6 7 PIN CONNECTIONS Function Cooler Anode Laser Anode, Case Ground Pin No. 8 9 10 11 12 13 14 Function Laser Cathode Laser Anode, Case Ground Thermistor Thermistor Cooler Cathode The information in this document is subject to change without notice. Document No. P10822EJ3V0DS00 (3rd edition) Date Published April 1998 NS CP(K) Printed in Japan The mark shows major revised points. 1993

ORDERING INFORMATION NDL7510P NDL7510PC Part Number Available Connector Without Connector With FC-PC Connector ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise specified) Parameter Symbol Ratings Unit Optical Output Power from Fiber *1 Pf 80 mw Pulsed Forward Current *1 IFP 600 ma Cooler Current IC 1.3 A Cooler Voltage VC 3.5 V Reverse Voltage VR 2.0 V Operating Case Temperature TC 20 to +65 C Storage Temperature Tstg 40 to +70 C Lead Soldering Temperature (10 s) Tsld 260 C *1 Pulse conditions: Pulse width (PW) = 10 µs, Duty = 1 % ELECTRO-OPTICAL CHARACTERISTICS (TLD = 25 C, TC = 20 to +65 C) Parameter Symbol Conditions MIN. TYP. MAX. Unit Forward Voltage VFP IFP = 400 ma, PW = 10 µs, Duty = 1 % 2.5 4.0 V Threshold Current Ith 20 30 ma Optical Output Power from Fiber Pf IFP = 400 ma, PW = 10 µs, Duty = 1 % 40 55 mw Center Wavelength λc IFP = 400 ma, PW = 10 µs, Duty = 1 %, RMS ( 20 db) Spectral Width σ IFP = 400 ma, PW = 10 µs, Duty = 1 %, RMS ( 20 db) 1 290 1 310 1 330 nm 10 nm Rise Time tr 10-90 % 0.5 1.0 ns Fall Time tf 90-10 % 0.7 1.0 ns ELECTRO-OPTICAL CHARACTERISTICS (Applicable to Thermistor and TEC: TLD = 25 C, TC = 20 to +65 C) Parameter Symbol Conditions MIN. TYP. MAX. Unit Thermistor Resistance R TLD = 25 C 9.5 10.0 10.5 kω B Constant B 3 300 3 400 3 500 K Cooler Current IC T = 40 K 0.6 1.0 A Cooler Voltage VC T = 40 K 1.1 1.5 V Cooling Capacity T *1 IC = 1.0 A 40 K 2 *1 T = TC TLD

TYPICAL CHARACTERISTICS (TC = 25 C, unless otherwise specified) Optical Output Power from Fiber Pf (mw) OPTICAL OUTPUT POWER FROM FIBER vs. PULSED FORWARD CURRENT 60 50 40 30 20 10 0 Relative Intensity (Linear Scale) LONGITUDINAL MODE (FROM FIBER) 100 200 300 400 1 310 10 nm/div Pulsed Forward Current IFP (ma) Wavelength λ (nm) 50 THERMISTOR RESISTAE vs. CASE TEMPERATURE Thermistor Resistance R (kω) 30 20 10 5 3 2 1 0 25 50 75 Case Temperature TC ( C) Remark The graphs indicate nominal characteristics. 3

LASER DIODE FAMILY FOR OTDR APPLICATION Features 1.31 µm 1.55 µm IFP *1 Packages Part Number P (mw) MIN./TYP. Part Number P (mw) MIN./TYP. (ma) Remarks φ 5.6 Can NDL7103 290/320 NDL7153 220/240 1 000 NDL7113 160/175 NDL7163 100/120 400 4-pin Coaxial Module with NDL7503P/P1 110/180 NDL7553P/P1 95/145 1 000 P : No frange SMF NDL7513P/P1 70/110 NDL7563P/P1 60/80 400 P1: With frange NDL7514P/P1 25/50 NDL7564P/P1 20/40 400 NDL7515P/P1 20/30 NDL7565P/P1 8/11 400 14-pin DIP Module with SMF NDL7502P 125/190 NDL7552P 100/125 1 000 With TEC and NDL7512P 90/110 NDL7562P 70/80 400 Thermistor NDL7510P 40/55 NDL7560P 20/30 400 *1 Pulse conditions: Pulse width = 10 µs, Duty = 1 % (modules) Pulse width = 1 µs, Duty = 1 % (φ 5.6 can) 4

REFEREE Document Name NEC semiconductor device reliability/quality control system Quality grades on NEC semiconductor devices Semiconductor device mounting technology manual Semiconductor selection guide Document No. C11159E C11531E C10535E X10679E 5

[MEMO] 6

[MEMO] 7

CAUTION Within this device there exists GaAs (Gallium Arsenide) material which is a harmful substance if ingested. Please do not under any circumstances break the hermetic seal. DANGER INVISIBLE LASER RADIATION AVOID DIRECT EXPOSURE TO BEAM OUTPUT POWER mw MAX WAVELENGTH nm CLASS lllb LASER PRODUCT SEMICONDUCTOR LASER AVOID EXPOSURE-Invisible Laser Radiation is emitted from this aperture NEC Corporation NEC Building, 7-1, Shiba 5-chome, Minato-ku, Tokyo 108-01, Japan Type number: Manufactured: Serial Number: This product conforms to FDA regulations as applicable to standards 21 CFR Chapter 1. Subchapter J. The export of this product from Japan is prohibited without governmental license. To export or re-export this product from a country other than Japan may also be prohibited without a license from that country. Please call an NEC sales representative. No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product. M4 96. 5