Motion-SPM FPAB30BH60B. Smart Power Module(SPM ) for Front-End Rectifier. General Description. Features. Applications. April Fig. 1.

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FPAB30BH60B Smart Power Module(SPM ) for Front-End Rectifier General Description FPAB30BH60B is an advanced smart power module(spm ) of PFC(Power Factor Correction) that Fairchild has newly developed and designed mainly targeting mid-power application especially for an air conditioners. It combines optimized circuit protection and drive IC matched to high frequency switching IGBT. System reliability is futher enhanced by the integrated under-voltage lock-out and over-current protection function. Features April 2010 Motion-SPM Low thermal resistance due to Al 2 O 3 -DBC substrate 600V-30A Single phase IGBT PWM converter including a drive IC for gate driving and protection Typical switching frequency of 20kHz Isolation rating of 2500Vrms/min. Applications Home appliances application like air conditioner TM Fig. 1.

Integrated Power Functions PFC converter for single-phase AC/DC power conversion (Please refer to Fig. 3) Integrated Drive, Protection and System Control Functions For IGBT: Gate drive circuit, Overcurrent circuit protection (OC), Control supply circuit under-voltage (UV) protection Fault signaling: Corresponding to a UV fault and OC fault Input interface: 3.3/5V CMOS/LSTTL compatible, Schmitt trigger input Pin Configuration (1)VCC (2)COM (3)COM (4)COM (5)IN (6)VFO (7)CFOD (8)CSC 18.345 Top View 12.205 (21)P (22)P (23)N.C (9)RTH (10)VTH (11)N.C (12)N.C (13)N (14)N (15)N (16)N (17)NR (18)NR (19)NR (20)NR (24)L (25)PR (26)R (27)S Case Temperature (TC) Detecting Point DBC Substrate Fig. 2. Note : For the measurement point of case temperature(t C ), please refer to Fig. 2.

Pin Descriptions Pin Number Pin Name Pin Description 1 V CC Common Bias Voltage for IC and IGBT Driving 2,3,4 COM Common Supply Ground 5 IN Signal Input for IGBT 6 V FO Fault Output 7 C FOD Capacitor for Fault Output Duration Time Selection 8 C SC Capacitor (Low-pass Filter) for Over Current Detection 9 R (TH) NTC Thermistor terminal 10 V (TH) NTC Thermistor terminal 11,12 N.C No Connection* 13~16 N IGBT emitter 17~20 N R Negative DC-Link of Rectifier 21,22 P Positive Rail of DC Link 23 N.C No Connection 24 L Reactor connection pin 25 P R Positive DC Link of Rectifier 26 R AC input for R-phase 27 S AC input for S-phase * 11th and 12th pins are cut. Please refer to package outline drawings for more detail. Internal Equivalent Circuit and Input/Output Pins (10) VTH (9) RTH NTC Thermistor (21,22) P (8) CSC CSC (7) CFOD CFOD (24) L (6) VFO VFO (5) IN IN OUT (25) PR (26) R (2~4) COM (1) VCC COM VCC (27) S (13~16) N (17~20) NR Fig. 3. Package Marking & Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FPAB30BH60B FPAB30BH60B SPM27-IC - - 10

Absolute Maximum Ratings (T J = 25 C, Unless Otherwise Specified) Converter Part Control Part Item Symbol Condition Rating Unit Supply Voltage V i Applied between R-S 264 V RMS Supply Voltage (Surge) V i(surge) Applied between R-S 500 V Output Voltage V PN Applied between P- N 450 V Output Voltage (Surge) V PN(Surge) Applied between P- N 500 V Collector-emitter Voltage V CES 600 V Each IGBT Collector Current I C T C = 25 C, T J < 150 C 30 A Each IGBT Collector Current (peak) I CP T C = 25 C, T J < 150 C Under 1ms pulse width 60 A Collector Dissipation P C T C = 25 C per One IGBT 104 W Repititive Peak Reverse Voltage V RRM 600 V Peak Forward Surge Current I FSM Single half sine-wave 350 A Operating Junction Temperature T J -40 ~ 150 C Item Symbol Condition Rating Unit Control Supply Voltage V CC Applied between V CC - COM 20 V Input Signal Voltage V IN Applied between IN - COM -0.3~V CC +0.3 V Fault Output Supply Voltage V FO Applied between V FO - COM -0.3~V CC +0.3 V Fault Output Current I FO Sink Current at V FO Pin 5 ma Current Sensing Input Voltage V SC Applied between C SC - COM -0.3~V CC +0.3 V Total System Item Symbol Condition Rating Unit Storage Temperature T STG -40 ~ 125 C Isolation Voltage V ISO 60Hz, Sinusoidal, AC 1 minute, Connection Pins to DBC 2500 V rms Thermal Resistance Item Symbol Condition Min. Typ. Max. Unit Junction to Case Thermal Resistance R q(j-c)q IGBT - - 1.2 C/W R q(j-c)f FRD - - 1.4 C/W R q(j-c)r Rectifier - - 1.7 C/W

Electrical Characteristics (T J = 25 C, Unless Otherwise Specified) Converter Part Item Symbol Condition Min. Typ. Max. Unit IGBT saturation voltage V CE(sat) V CC =15V, V IN = 5V; I C =30A - 2.2 2.8 V FRD forward voltage V FF I F = 30A - 1.9 2.6 V Rectifier forward voltage V FR I F = 30A - 1.2 1.5 V Switching Times t ON V PN = 400V, V CC = 15V, I C =30A - 500 - ns t C(ON) V IN = 0V «5V, Inductive Load - 200 - ns Collector - emitter Leakage Current Note 1. t ON and t OFF include the propagation delay time of the internal drive IC. t C(ON) and t C(OFF) are the switching time of IGBT itself under the given gate driving condition internally. For the detailed information, please see Fig. 4 Electrical Characteristics t OFF (Note 1) - 420 - ns t C(OFF) - 100 - ns t rr - 60 - ns I rr - 7 - A I CES V CE = V CES - - 250 ma I rr 100% of I C 120% of I C V CE I C 90% of I C I C 10% of I C 15% of V CE V CE 15% of V CE 10% of I C V IN V IN t ON t rr t C(OFF) t C(ON) t OFF (a) Turn-on (b) Turn-off Control Part Fig. 4. Switching Time Definition Item Symbol Condition Min. Typ. Max. Unit Quiescent V CC Supply Current I QCCL V CC = 15V, IN = 0V V CC - COM - - 26 ma Fault Output Voltage V FOH V SC = 0V, V FO Circuit: 4.7kW to 5V Pull-up 4.5 - - V V FOL V SC = 1V, V FO Circuit: 4.7kW to 5V Pull-up - - 0.8 V Over Current Trip Level V SC(ref) V CC = 15V 0.45 0.5 0.55 V Supply Circuit Under- Voltage Protection UV CCD Detection Level 10.7 11.9 13.0 V UV CCR Reset Level 11.2 12.4 13.2 V Fault-out Pulse Width t FOD C FOD = 33nF (Note 2) 1.4 1.8 2.0 ms ON Threshold Voltage V IN(ON) Applied between IN - COM 2.8 - - V OFF Threshold Voltage V IN(OFF) - - 0.8 V Resistance of Thermistor R TH @ T TH = 25 C (Note3, Fig. 9) - 47.0 - kw @ T TH = 100 C (Note3, Fig. 9) - 2.9 - kw Note 2. The fault-out pulse width t FOD depends on the capacitance value of C FOD according to the following approximate equation : C FOD = 18.3 x 10-6 x t FOD [F] 3. TTH is the temperature of know case temperature(tc), please make the experiment considering your application.

Recommended Operating Condition Item Symbol Condition Min. Typ. Max. Unit Input Supply Voltage V i Applied between R-S 187 220 253 V Output Voltage V PN Applied between P-N 380 400 V Control Supply Voltage V CC Applied between V CC(L) - COM 13.5 15 16.5 V Control supply variation dv CC /dt -1-1 V/ms PWM Input Frequency f PWM T J 150 C per IGBT 20 khz Allowable Input Current (Peak) Mechanical Characteristics and Ratings Item I i T C < 90 C, V i =220V, V PN =380V V PWM =20KHz Condition Limits Min. Typ. Max. 30 A Mounting Torque Mounting Screw: - M3 Recommended 0.62N m 0.51 0.62 0.72 N m Device Flatness Note Fig. 5 0 - +120 mm Weight - 15.00 - g Units (+) (+) (+) Fig. 5. Flatness Measurement Position

Time Charts of SPMs Protective Function In p u t S ig n a l In te rn a l IG B T G a te -E m itte r V o lta g e C o n tro l S u p p ly V o lta g e O u tp u t C u rre n t F a u lt O u tp u t S ig n a l P1 : Normal operation - IGBT ON and conducting current P2 : Under voltage detection P3 : IGBT gate interrupt P4 : Fault signal generation P5 : Under voltage reset P6 : Normal operation - IGBT ON and conducting current In p u t S ig n a l U V d e te c t P 1 Fig. 6. Under-Voltage Protection P 5 P 3 P 2 P 4 P 5 U V re s e t P 6 In te rn a l IG B T G a te -E m itte r V o lta g e P 6 O C D e te c tio n P 1 O u tp u t C u rre n t P 4 P 7 S e n s in g V o lta g e P 2 O C R e fe r e n c e V o lta g e ( 0.5 V ) F a u lt O u tp u t S ig n a l R C F ilte r D e la y P 3 P 8 P1 : Normal operation - IGBT ON and conducting current P2 : Over current detection P3 : IGBT gate interrupt / Fault signal generation P4 : IGBT is slowly turned off P5 : IGBT OFF signal P6 : IGBT ON signal - but IGBT cannot be turned on during the fault Output activation P7 : IGBT OFF state P8 : Fault Output reset and normal operation start Fig. 7. Over Current Protection

Fig. 8. Application Example R-T Curve Resistance R TH [kw] 200 150 100 50 MIN TYP MAX Resistance R TH [kw] 4 3 2 1 95 100 105 110 115 120 125 Temperature T TH [ ] MIN TYP MAX 0 0 25 50 75 100 125 Temperature T TH [ ] Fig. 9. R-T Curve of the Built-in Thermistor

Detailed Package Outline Drawings

Detailed Package Outline Drawings

Detailed Package Outline Drawings

Rev. 00