MGA-T GPS Low Noise Amplifier with Variable Bias Current and Shutdown Function Data Sheet Description Avago Technologies MGA-T is a LNA designed for GPS/ISM/Wimax applications in the (.9-.)GHz frequency range. The LNA uses Avago Technologies s proprietary GaAs Enhancement-mode phemt process to achieve high gain operation with very low noise figures and high linearity. Noise figure distribution is very tightly controlled. Gain and supply current are guaranteed parameters. A CMOS compatible shutdown pin is included to turn the LNA off and provide a variable bias. The MGA-T LNA is useable down to V operation. It achieves low noise figures and high gain even at V, making it suitable for use in critical low power GPS/ISM band applications. Component Image Surface Mount.x.x. mm -lead UTSLP. Note: Package marking provides orientation and identification F = Product Code Y = Year of manufacture M = Month of manufacture FYM Top View Bottom View Features Low Noise Figure :.7dB High Gain :.db High linearity and PdB GaAs E-pHEMT Technology Low component count Wide Supply Voltage : V to.v Shutdown current : <.ua CMOS compatible shutdown pin (VSD) current @.8V : ua Adjustable bias current via one single external resistor/voltage Shutdown function Small Footprint: x.mm Low Profile :. mm Ext matching for non-gps freq band operation Specifications At.7GHz,.8V.mA (Typ) Gain =. db (Typ) NF =.7 db (Typ) IIP =. dbm (Typ) IPdB =. dbm (Typ) S = -8 db (Typ) S = -. db (Typ) At.7GHz,.8V 8mA (Typ) Gain =.7 db (Typ) NF =.8 db (Typ) IIP =. dbm (Typ) IPdB = dbm (Typ) S = -.8 db (Typ) S = -9. db (Typ) Applications GPS, ISM & WiMax Bands LNA Attention: Observe precautions for handling electrostatic sensitive devices. ESD Machine Model = V ESD Human Body Model = V Refer to Avago Technologies Application Note AR: Electrostatic Discharge, Damage and Control.
Absolute Maximum Rating [] T A = C Thermal Resistance [] (Vdd =.8V, Ids =.9mA), θjc = 7 C/W Symbol Parameter Units Absolute Max. Vdd Device Drain to Source Voltage [] V. Ids Drain Current [] ma P in,max CW RF Input Power (Vdd =.8V, Idd=.9mA) dbm + P diss Total Power Dissipation [] mw T j Junction Temperature C T STG Storage Temperature C - to Notes:. Operation of this device in excess of any of these limits may cause permanent damage.. Assuming DC quiescent conditions. Thermal resistance measured using Infra-Red measurement technique.. Board (module belly) temperature TB is C. Derate mw/ C for TB> C. Product Consistency Distribution Charts [,] stdev=. stdev=. Figure. Gain @.7GHz; LSL =.db, Nominal =.db, USL=.dB...7.8.9... Figure. NF @.7GHz; Nominal =.7dB, USL=.dB stdev=.9 7 8 9 Figure. Ids @.7GHz; Nominal =.ma, USL = ma Note:. Distribution data sample size is samples taken from different non-consecutive wafer lots. Future wafers allocated to this product may have nominal values anywhere between the upper and lower limits.. Measurements are made on a production test board, which can show a variance of up to db in gain and OIP compared to a soldered-down demo board. Input trace losses have been de-embedded from actual measurements.
Electrical Specifications TA = C, DC bias for RF parameters is Vdd = Vsd = +.8V, measured on demo board (see Fig. ) unless otherwise specified. VDD= VSD = +.8V, R = K Ohm, Freq=.7GHz Typical Performance [7] Table. Performance table at nominal operating conditions Symbol Parameter and Test Condition Units Min. Typ Max. G Gain db... NF Noise Figure db -.7. IPdB Input db Compressed Power dbm. IIP [8] Input rd Order Intercept Point (-tone @ Fc +/-.MHz) dbm. S Input Return Loss db -8 S Output Return Loss db -. Ids Supply Current ma. Ish Shutdown Current @ VSD = V ua. Vds Supply Voltage V.8 IP- db 7M Out of Band IPdB (DCS 7MHz) blocking dbm IIP OUT Out of Band IIP (DCS 77MHz & 9MHz) dbm. VDD = +V, VDD= +.V & VDD= +.V, Freq=.7GHz Typical Performance (VSD=VDD, R= Ohm) Table. Typical performance at low operation voltages with R (see Fig ) set to Ohm Symbol Parameter and Test Condition Units Vdd=V Vdd=.V Vdd=V G Gain db...8 NF Noise Figure db.7.8.9 IPdB Input db Compressed Power dbm -.8 -. -. IIP [8] Input rd Order Intercept Point (-tone @ Fc +/-.MHz) dbm 7... S Input Return Loss db -. -9-7. S Output Return Loss db - - - Ids Supply Current ma. Ish Shutdown Current @ VSD = V ua... Vds Supply Voltage V.. IP- db 7M Out of Band IPdB (DCS 7MHz) blocking dbm -. -. - IIP OUT Out of Band IIP (DCS 77MHz & 9MHz) dbm. 8. 7 Notes: 7. Measurements at.7ghz obtained using demo board described in Fig. 8..7GHz IIP test condition: FRF = 7 MHz, FRF = 77. GHz with input power of -dbm per tone measured at lower side band
Circuit Symbol Size Desciption L. nh Inductor L nh Inductor L.8 nh Inductor L nh Inductor C, C.8 pf Capacitor C. uf Capacitor R K Ohm Resistor R Ohm Resistor Figure. Demoboard and application circuit components table
Vs d = +.8V C C C=.8 pf R R R= kohm C C C=. uf C C C=.8 pf BIAS Vdd = +.8V P RL P RL R = Ohm L = nh Toko L L L=.8 nh R= Toko RF_IN RF_OUT L L L=. nh Toko C L L L= nh Toko Amplifie r AMP C GND Figure. Demoboard schematic diagram Notes. L and L form the input matching network. The LNA module has a built-in coupling and DC-block capacitor at the input and output. Best noise performance is obtained using high-q wirewound inductors. This circuit demonstrates that low noise figures are obtainable with standard chip inductors. Replacing L, L and L with high-q wirewound inductors (eg. Cilcraft CS series) will yield.db lower NF and.db higher Gain.. L is an output matching inductor.. C is a RF bypass capacitor.. PRL is a network that isolates the measurement demoboard from external disturbances. C and C mitigates the effect of external noise pickup on the VSD and VDD lines. These components are not required in actual operation.. Bias control is achieved by either varying the VSD voltage without R or fixing the VSD voltage to VDD and varying R. Typical value for R is k Ohm for ma total current at VDD=+.8V.
MGA-T Typical Performance Curves, Vdd=Vsd=+.8V, R=KOhm measured on demoboard (see Fig.) at.7ghz (At C unless specified otherwise) Gain (db) 9.7 GHz 8 GHz 7. GHz NF (db)...9.8.7..7 GHz GHz.. GHz. Figure. Gain vs Vdd vs Freq Figure 7. NF vs Vdd vs Freq 7 IIP (dbm).7 GHz GHz. GHz IPdB (dbm).7 GHz GHz. GHz Figure 8. IIP vs Vdd vs Freq Figure 9. IPdB vs Vdd vs Freq Ids (ma) 8 7.7 GHz GHz. GHz Figure. Ids vs Vdd vs Freq
MGA-T Typical Performance Curves, Vdd=Vsd=+.8V, R=KOhm measured on demoboard (see Fig.) (At C unless specified otherwise) Gain (db) 8 deg - deg 8 8 deg Figure. Gain vs Vdd vs Temp NF (db)...8.. - deg. 8 deg Figure. NF vs Vdd vs Temp deg IIP (dbm)..... Figure. IIP vs Vdd vs Temp deg - deg 8 deg IPdB (dbm)... deg - deg 8 deg. Figure. IPdB vs Vdd vs Temp Ids (ma) 8 7 deg - deg 8 deg Figure. Ids vs Vdd vs Temp 7
Package Dimensions PCB Land Patterns and Stencil Design PCB Land Pattern (dimensions in mm) Stencil Outline Drawing (dimensions in mm) Combined PCB and Stencil Layouts (dimensions in mm) 8
Device Orientation Tape Dimensions Part Number Ordering Information Part Number No. of Devices Container MGA-T-BLKG Antistatic bag MGA-T-TRG 7 Reel MGA-T-TRG Reel
Reel Dimensions For product information and a complete list of distributors, please go to our web site: www.avagotech.com Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies, Limited in the United States and other countries. Data subject to change. Copyright 7 Avago Technologies Limited. All rights reserved. Obsoletes AV-88EN AV-EN - March, 7