TSUS54, TSUS541, TSUS542 Infrared Emitting Diode, 95 nm, DESCRIPTION 94 839 TSUS54 is an infrared, 95 nm emitting diode in technology molded in a blue-gray tinted plastic package. FEATURES Package type: leaded Package form: T-1¾ Dimensions (in mm): Ø 5 Leads with stand-off Peak wavelength: λ p = 95 nm High reliability Angle of half intensity: ϕ = ± 22 Low forward voltage Suitable for high pulse current operation Good spectral matching with Si photodetectors Compliant to RoHS directive 22/95/EC and in accordance to WEEE 22/96/EC Halogen-free according to IEC 61249-2-21 definition APPLICATIONS Infrared remote control and free air transmission systems with low forward voltage and small package requirements Emitter in transmissive sensors Emitter in reflective sensors PRODUCT SUMMARY COMPONENT I e (mw/sr) ϕ (deg) λ P (nm) t r (ns) TSUS54 14 ± 22 95 8 TSUS541 17 ± 22 95 8 TSUS542 2 ± 22 95 8 Test conditions see table Basic Characteristics ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM TSUS54 Bulk MOQ: 4 pcs, 4 pcs/bulk T-1¾ TSUS541 Bulk MOQ: 4 pcs, 4 pcs/bulk T-1¾ TSUS542 Bulk MOQ: 4 pcs, 4 pcs/bulk T-1¾ MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS PARAMETER TEST CONDITION SYMBOL VALUE UNIT Reverse voltage V R 5 V Forward current 15 ma Peak forward current t p /T =.5, t p = µs M 3 ma Surge forward current t p = µs SM 2.5 A Power dissipation P V 17 mw Junction temperature T j C Operating temperature range T amb - 4 to + 85 C Storage temperature range T stg - 4 to + C Soldering temperature t 5 s, 2 mm from case T sd 26 C Thermal resistance junction/ambient J-STD-51, leads 7 mm, soldered on PCB R thja 23 K/W Document Number: 8156 For technical questions, contact: emittertechsupport@vishay.com www.vishay.com Rev. 1.7, 25-Jun-9 1
TSUS54, TSUS541, TSUS542 Infrared Emitting Diode, 95 nm, 18 12 P V - Power Dissipation (mw) 16 14 12 8 6 4 2 R thja = 23 K/W - Forward Current (ma) 8 6 4 2 R thja = 23 K/W 1 2 3 4 5 6 7 8 9 21313 T amb - Ambient Temperature ( C) Fig. 1 - Power Dissipation Limit vs. Ambient Temperature 1 2 3 4 5 6 7 8 9 21314 T amb - Ambient Temperature ( C) Fig. 2 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERISTICS PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Forward voltage = ma, t p = 2 ms V F 1.3 1.7 V Temperature coefficient of V F = ma TK VF - 1.3 mv/k Reverse current V R = 5 V I R µa Junction capacitance V R = V, f = 1 MHz, E = C j 3 pf Temperature coefficient of φ e = 2 ma TKφ e -.8 %/K Angle of half intensity ϕ ± 22 deg Peak wavelength = ma λ p 95 nm Spectral bandwidth = ma Δλ 5 nm Temperature coefficient of λ p = ma TKλ p.2 nm/k Rise time = ma t r 8 ns = 1.5 A t r 4 ns = ma t f 8 ns Fall time = 1.5 A t f 4 ns Virtual source diameter d 2.9 mm TYPE DEDICATED CHARACTERISTICS PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT Forward voltage = 1.5 A, t p = µs Radiant intensity Radiant power = ma, t p = 2 ms = 1.5 A, t p = µs = ma, t p = 2 ms TSUS54 V F 2.2 3.4 V TSUS541 V F 2.2 3.4 V TSUS542 V F 2.2 2.7 V TSUS54 I e 7 14 35 mw/sr TSUS541 I e 1 17 35 mw/sr TSUS542 I e 15 2 35 mw/sr TSUS54 I e 6 14 mw/sr TSUS541 I e 85 16 mw/sr TSUS542 I e 12 19 mw/sr TSUS54 φ e 13 mw TSUS541 φ e 14 mw TSUS542 φ e 15 mw www.vishay.com For technical questions, contact: emittertechsupport@vishay.com Document Number: 8156 2 Rev. 1.7, 25-Jun-9
TSUS54, TSUS541, TSUS542 Infrared Emitting Diode, 95 nm, BASIC CHARACTERISTICS 1 1 I - Forward Current (A) F 1 SM = 2.5 A ( Single Pulse ) t p /T =.1.5.1.5 I - Radiant Intensity (mw/sr) e 1 TSUS 542 TSUS54 TSUS 541 1-1 1. 1-2 1-1 1 1 1 1 2 94 7989 t p - Pulse Duration (ms) 94 7997 1 1 1 1 1 2 1 3 1 4 - Forward Current (ma) Fig. 3 - Pulse Forward Current vs. Pulse Duration Fig. 6 - Radiant Intensity vs. Forward Current 1 4 I - Forward Current (ma) F 1 3 1 2 1 1 1 - Radiant Power (mw) e Φ 1 1 TSUS 542 TSUS54 94 7996 1-1 1 2 3 V F - Forward Voltage (V) 4 94 7998.1 1 1 1 1 2 1 3 1 4 - Forward Current (ma) Fig. 4 - Forward Current vs. Forward Voltage Fig. 7 - Radiant Power vs. Forward Current V F rel - Relative Forward Voltage (V) 1.2 1.1 = 1 ma 1..9.8.7 2 4 6 8 94 799 T amb - Ambient Temperature ( C) Φ e rel I e rel ; 1.6 1.2.8.4 94 7993 = 2 ma - 1 1 5 T amb - Ambient Temperature ( C) 14 Fig. 5 - Relative Forward Voltage vs. Ambient Temperature Fig. 8 - Relative Radiant Intensity/Power vs. Ambient Temperature Document Number: 8156 For technical questions, contact: emittertechsupport@vishay.com www.vishay.com Rev. 1.7, 25-Jun-9 3
TSUS54, TSUS541, TSUS542 Infrared Emitting Diode, 95 nm, Φ e rel - Relative Radiant Power 1.25 1..75.5.25 = ma 9 95 94 7994 λ - Wavelength (nm) Fig. 9 - Relative Radiant Power vs. Wavelength I e rel - Relative Radiant Intensity 1..9.8.7 94 7999.6.4.2.2.4 Fig. 1 - Relative Radiant Intensity vs. Angular Displacement 1 2.6 3 4 5 6 7 8 PACKAGE DIMENSIONS in millimeters A C 5.8 ±.15 R 2.49 (sphere) 11.9 ±.3 8.7 ±.3 7.7 ±.15 <.7 (4.1) Area not plane 34.9 ±.55 1.1 ±.25 Ø 5 ±.15 1 min..5 +.15 -.5.5 +.15 -.5 technical drawings according to DIN specifications 2.54 nom. 6.544-5258.1-4 Issue: 5; 19.5.9 96 12119 www.vishay.com For technical questions, contact: emittertechsupport@vishay.com Document Number: 8156 4 Rev. 1.7, 25-Jun-9
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