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DATA SHEET SWITCHING P-CHANNEL POWER MOS FET MOS FIELD EFFECT TRANSISTOR 2SJ67 DESCRIPTION The 2SJ67 is P-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES Super low on-state resistance: RDS(on)1 = 11 mω MAX. (VGS = V, ID = 2 A) RDS(on)2 = 16 mω MAX. (VGS =. V, ID = 2 A) Low input capacitance: Ciss = 75 pf TYP. (VDS = V, VGS = V) Built-in gate protection diode ABSOLUTE MAXIMUM RATINGS (TA = 25 C) Drain to Source Voltage (VGS = V) VDSS 6 V Gate to Source Voltage (VDS = V) VGSS m 2 V Drain Current (DC) (TC = 25 C) ID(DC) m 83 A Drain Current (pulse) Note1 ID(pulse) m 332 A Total Power Dissipation (TC = 25 C) PT 16 W Total Power Dissipation (TA = 25 C) PT 1.5 W Channel Temperature Tch 15 C Storage Temperature Tstg 55 to +15 C Single Avalanche Current Note2 IAS 5 A Single Avalanche Energy Note2 EAS 25 mj ORDERING INFORMATION PART NUMBER 2SJ67 2SJ67-S 2SJ67-ZJ 2SJ67-Z PACKAGE TO-22AB TO-262 TO-263 TO-22SMD Note Note TO-22SMD package is produced only in Japan (TO-22AB) (TO-262) Notes 1. PW 1 µs, Duty cycle 1% 2. Starting Tch = 25 C, VDD = 3 V, RG = 25 Ω, VGS = 2 V (TO-263, TO-22SMD) The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. Date Published Printed in Japan D1655EJ3VDS (3rd edition) July 22 NS CP(K) The mark shows major revised points. 2, 21
2SJ67 ELECTRICAL CHARACTERISTICS (TA = 25 C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Zero Gate Voltage Drain Current IDSS VDS = 6 V, VGS = V µa Gate Leakage Current IGSS VGS = m 2 V, VDS = V m 1 µa Gate Cut-off Voltage VGS(off) VDS = V, ID = ma.5 2. 2.5 V Forward Transfer Admittance yfs VDS = V, ID = 2 A 5 9 S Drain to Source On-state Resistance RDS(on)1 VGS = V, ID = 2 A 9.1 11 mω RDS(on)2 VGS =. V, ID = 2 A 11 16 mω Input Capacitance Ciss VDS = V 75 pf Output Capacitance Coss VGS = V 18 pf Reverse Transfer Capacitance Crss f = 1 MHz 3 pf Turn-on Delay Time td(on) VDD = 3 V, ID = 2 A 23 ns Rise Time tr VGS = V 16 ns Turn-off Delay Time td(off) RG = Ω 3 ns Fall Time tf 16 ns Total Gate Charge QG VDD= 8 V 188 nc Gate to Source Charge QGS VGS = V 3 nc Gate to Drain Charge QGD ID = 83 A 8 nc Body Diode Forward Voltage VF(S-D) IF = 83 A, VGS = V 1. V Reverse Recovery Time trr IF = 83 A, VGS = V 6 ns Reverse Recovery Charge Qrr di/dt = 1 A/ µs 15 nc TEST CIRCUIT 1 AVALANCHE CAPABILITY TEST CIRCUIT 2 SWITCHING TIME D.U.T. RG = 25 Ω PG. 5 Ω VGS = 2 V BVDSS IAS ID VDD VDS L VDD PG. VGS ( ) τ RG D.U.T. RL VDD VGS Wave Form VDS Wave Form VGS ( ) 1% VDS ( ) 9% VDS VGS 1% 1% 9% td(on) tr td(off) t f 9% Starting Tch τ = 1 µ s Duty Cycle 1% ton toff TEST CIRCUIT 3 GATE CHARGE D.U.T. IG = 2 ma RL PG. 5 Ω VDD 2 Data Sheet D1655EJ3VDS
2SJ67 TYPICAL CHARACTERISTICS (TA = 25 C) dt - Percentage of Rated Power - % 1 8 6 2 DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 2 6 8 1 12 1 16 Tch - Channel Temperature - C PT - Total Power Dissipation - W 2 16 12 8 TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 2 6 8 1 12 1 16 TC - Case Temperature - C FORWARD BIAS SAFE OPERATING AREA ID(pulse) PW = 1 µs RDS(on) Limited ID(DC) 1 ms Power Dissipation Limited DC 1 ms 1 µs TC = 25 C Single Pulse.1 VDS - Drain to Source Voltage - V 1 TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH rth(t) - Transient Thermal Resistance - C/W 1 1 1.1.1 1 µ 1 µ Rth(ch-A) = 83.3 C/W Rth(ch-C) =.78 C/W Single Pulse 1 m 1 m 1 m 1 1 1 1 PW - Pulse Width - s Data Sheet D1655EJ3VDS 3
2SJ67 FORWARD TRANSFER CHARACTERISTICS 3 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE TA = 55 C 25 C 75 C 125 C VDS = V.1 2 3 5 VGS - Gate to Source Voltage - V 2 VGS = V 8.5 V 2. V 6 2 3 5 VDS - Drain to Source Voltage - V yfs - Forward Transfer Admittance - S 1 1 1 1 FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT.1.1.1 TA = 125 C 75 C 25 C 55 C VDS = V RDS(on) - Drain to Source On-state Resistance - mω DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 3 2 1 ID = 83 A 2 A 7 A 2 6 8 VGS - Gate to Source Voltage - V RDS(on) - Drain to Source On-state Resistance - mω 2 16 12 8 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT VGS =. V.5 V V VGS(off) - Gate Cut-off Voltage - V. 3. 2.. GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE 5 5 1 Tch - Channel Temperature - C VDS = V ID = ma 15 Data Sheet D1655EJ3VDS
2SJ67 RDS(on) - Drain to Source On-state Resistance - mω DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 2 16 VGS =. V.5 V V 12 8 ID = 2 A 5 5 1 15 Tch - Channel Temperature - C ISD - Diode Forward Current - A VGS = V SOURCE TO DRAIN DIODE FORWARD VOLTAGE. V V.1.5..5 VSD - Source to Drain Voltage - V 2. Ciss, Coss, Crss - Capacitance - pf 1 1 1 CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 1.1 VGS = V f = 1 MHz Ciss Coss Crss td(on), tr, td(off), tf - Switching Time - ns 1 1 1 1.1 SWITCHING CHARACTERISTICS td(on) tr tf td(off) VDD = 3 V VGS = V RG = Ω VDS - Drain to Source Voltage - V VDS - Drain to Source Voltage - V 6 5 3 2 DYNAMIC INPUT/OUTPUT CHARACTERISTICS VDD = 8 V 3 V 2 V VDS 8 12 16 QG - Gate Charge - nc ID = 83 A VGS 2 8 6 2 2 VGS - Gate to Source Voltage - V IAS - Single Avalanche Current - A SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD IAS = 5 A VDD = 3 V RG = 25 Ω VGS = 2 V 1 µ 1 µ EAS = 25 mj L - Inductive Load - H 1 m 1 m Data Sheet D1655EJ3VDS 5
2SJ67 Energy Derating Factor - % 16 1 12 1 8 6 2 SINGLE AVALANCHE ENERGY DERATING FACTOR VDD = 3 V RG = 25 Ω VGS = 2 V IAS 5 A 25 5 75 1 125 15 Starting Tch - Starting Channel Temperature - C 6 Data Sheet D1655EJ3VDS
2SJ67 PACKAGE DRAWINGS (Unit: mm) 1) TO-22AB (MP-25) 2) TO-262 (MP-25 Fin Cut) 3.±.3 1.6 MAX. 1. TYP. φ 3.6±.2.8 MAX. 1.3±.2 1 TYP. 1.±.5.8 MAX. 1.3±.2 1.3±.2 1 2 3 5.9 MIN. 6. MAX. 15.5 MAX. 12.7 MIN..75±.1 2.5 TYP. 2.5 TYP..5±.2 2.8±.2 1.Gate 2.Drain 3.Source.Fin (Drain) 1.3±.2 1 2 3 8.5±.2 12.7 MIN..75±.3 2.5 TYP. 2.5 TYP..5±.2 2.8±.2 1.Gate 2.Drain 3.Source.Fin (Drain) 3) TO-263 (MP-25ZJ) ) TO-22SMD (MP-25Z) Note 1 TYP..8 MAX. 1.3±.2 1 TYP..8 MAX. 1.3±.2 1.±.5 1 2 3 8.5±.2 1.±.5 1 2 3 8.5±.2 1.±.2.7±.2 5.7±. 2.5 TYP. 2.5 TYP..5R TYP..8R TYP..5±.2 1.1±. 3.±.5 1.±.2.75±.3 2.5 TYP. 2.5 TYP..5R TYP..8R TYP..5±.2 2.8±.2 1.Gate 2.Drain 3.Source.Fin (Drain) 2.8±.2 1.Gate 2.Drain 3.Source.Fin (Drain) Note This package is produced only in Japan. EQUIVALENT CIRCUIT Drain Gate Body Diode Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. Gate Protection Diode Source Data Sheet D1655EJ3VDS 7
2SJ67 The information in this document is current as of July, 22. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document. NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC or others. Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. NEC semiconductor products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. The recommended applications of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of each semiconductor product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness to support a given application. (Note) (1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above). M8E.