DATA SHEET SWITCHING N-CHANNEL POWER MOS FET MOS FIELD EFFECT TRANSISTOR SK33B DESCRIPTION The SK33B is N-channel MOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES Low on-state resistance RDS(on) =. Ω MAX. ( = V, ID =. A) Low gate charge QG = 7.9 nc TYP. (VDD = 5 V, = V, ID =. A) Gate voltage rating : ±3 V Avalanche capability ratings <R> ORDERING INFORMATION PART NUMBER LEAD PLATING PACKING PACKAGE SK33B-S5-AY Note Tube 7 p/tube TO-5 (MP-3-a) typ..39 g SK33B()-S7-AY Note Tube 75 p/tube TO-5 (MP-3-b) typ..3 g Pure Sn (Tin) SK33B-ZK-E-AY Note Tape 5 p/reel TO-5 (MP-3ZK) typ..7 g SK33B-ZK-E-AY Note Note Pb-free (This product does not contain Pb in external electrode.) ABSOLUTE MAXIMUM RATINGS (TA = 5 C) Drain to Source Voltage ( = V) VDSS 6 V Gate to Source Voltage (VDS = V) S ±3 V Drain Current (DC) (TC = 5 C) ID(DC) ±. A Drain Current (pulse) Note ID(pulse) ±8. A Total Power Dissipation (TC = 5 C) PT W Total Power Dissipation (TA = 5 C) Note PT. W Channel Temperature Tch 5 C Storage Temperature Tstg 55 to +5 C Single Avalanche Current Note3 IAS. A Single Avalanche Energy Note3 EAS.7 mj (TO-5) (TO-5) Notes. PW μs, Duty Cycle %. Mounted on glass epoxy board of mm mm.6 mm 3. Starting Tch = 5 C, VDD = 5 V, RG = 5 Ω, = V The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. D86EJ3VDS (3rd edition) Date Published June 7 NS Printed in Japan The mark <R> shows major revised points. The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field. 6
SK33B ELECTRICAL CHARACTERISTICS (TA = 5 C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Zero Gate Voltage Drain Current IDSS VDS = 6 V, = V μa Gate Leakage Current IGSS = ±3 V, VDS = V ± μa Gate Cut-off Voltage (off) VDS = V, ID = ma.5 3.5 V Forward Transfer Admittance Note yfs VDS = V, ID =. A.5.9 S Drain to Source On-state Resistance Note RDS(on) = V, ID =. A 3.. Ω Input Capacitance Ciss VDS = V 9 pf Output Capacitance Coss = V 75 pf Reverse Transfer Capacitance Crss f = MHz 7 pf Turn-on Delay Time td(on) VDD = 5 V, ID =. A.5 ns Rise Time tr = V.8 ns Turn-off Delay Time td(off) RG = Ω 5.8 ns Fall Time tf RL = Ω.5 ns Total Gate Charge QG VDD = 5 V 7.9 nc Gate to Source Charge QGS = V.7 nc Gate to Drain Charge QGD ID =. A 3. nc Body Diode Forward Voltage Note VF(S-D) IF =. A, = V.8 V Reverse Recovery Time trr IF =. A, = V 9 ns Reverse Recovery Charge Qrr di/dt = 5 A/μs 5 nc Note TEST CIRCUIT AVALANCHE CAPABILITY TEST CIRCUIT SWITCHING TIME D.U.T. RG = 5 Ω PG. 5 Ω = V BVDSS IAS ID VDD VDS L VDD PG. τ RG D.U.T. RL VDD Wave Form ID Wave Form ID % % 9% ID 9% 9% td(on) tr td(off) t f % Starting Tch τ = μs Duty Cycle % ton toff TEST CIRCUIT 3 GATE CHARGE D.U.T. IG = ma RL PG. 5 Ω VDD Data Sheet D86EJ3VDS
SK33B TYPICAL CHARACTERISTICS (TA = 5 C) dt - Percentage of Rated Power - % 8 6 DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA PT - Total Power Dissipation - W 35 3 5 5 5 TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 6 8 6 Tch - Channel Temperature - C 6 8 6 TC - Case Temperature - C FORWARD BIAS SAFE OPERATING AREA Tc = 5 C, Single pulse PW = μs. ID(DC) ID(pulse) RDS(on) Limited (at = V) μs ms ms Power Dissipation Limited. VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH rth(ch-a) - Transient Thermal Resistance - C/W Rth(ch-A) = 5 C/W Rth(ch-C) = 6.5 C/W. Single pulse. μ m m m PW - Pulse Width s Data Sheet D86EJ3VDS 3
SK33B DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE FORWARD TRANSFER CHARACTERISTICS 5.5 = V 3.5 3 8 V.5.5.5 5 5 5.. Tch = 5 C 75 C 5 C 5 C VDS = V 5 5 5 3 VDS - Drain to Source Voltage - V - Gate to Source Voltage - V GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT (off) - Gate Cut-off Voltage - V 5.5 3.5 3.5.5.5 VDS = V ID = ma -5 5 5 yfs - Forward Transfer Admittance - S.. VDS = V Tch = 5 C 5 C 75 C 5 C.. Tch - Channel Temperature - C DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT RDS(on) - Drain to Source On-state Resistance - Ω 8. 7. 6. 5.. 3.. ID =. A. A 5 5 5 Gate to Source Voltage - V RDS(on) - Drain to Source On-state Resistance - Ω 6. 5.5 5..5. 3.5 = V 3. V.5... Data Sheet D86EJ3VDS
SK33B DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE SOURCE TO DRAIN DIODE FORWARD VOLTAGE RDS(on) - Drain to Source On-state Resistance - Ω 8 6 ID =. A. A = V -5 5 5 Tch - Channel Temperature - C IF Diode Forward Current - A V GS = V. V...5. VF(S-D) Source to Drain Voltage - V CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE SWITCHING CHARACTERISTICS Ciss, Coss, Crss - Capacitance - pf = V f = MHz C iss C rss C oss. td(on), tr, td(off), tf - Switching Time - ns td(off) td(on) tf tr VDD = 5 V = V RG = Ω. VDS - Drain to Source Voltage V REVWESE RECOVERY TIME vs. DRAIN CURRENT DYNAMIC INPUT/OUTPUT CHARACTERISTICS trr Reverse Recovery Time - ns di/dt = 5 A/μs = V. VDS Drain to Source Voltage - V 6 5 3 VDD = 5 V 3 V 5 V VDS ID =. A 6 8 9 8 7 6 5 3 Gate to Source Voltage - V QG Gate Chage - nc Data Sheet D86EJ3VDS 5
SK33B IAS - Single Avalanche Current - A.. μ SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD RG = 5 Ω VDD = 5 V = V Starting Tch = 5 C IAS =. A EAS =.7 mj μ m m L - Inductive Load - H Energy Derating Factor - % 8 6 SINGLE AVALANCHE ENERGY DERATING FACTOR VDD = 5 V RG = 5 Ω = V IAS. A 5 5 75 5 5 Starting Tch - Starting Channel Temperature - C 6 Data Sheet D86EJ3VDS
SK33B <R> PACKAGE DRAWINGS (Unit: mm) ) TO-5 (MP-3-a) ) TO-5 (MP-3-b) 6.6 ±. Mold Area 5.3 TYP..3 ±..3 MIN..5 ±. 6.6±. 5.3 TYP.. MIN.. MAX. 3.7 TYP. 6. ±..8 ±. No Plating.76 ±..5 ±.. TYP. 6. TYP..3 TYP..3 TYP.. Gate. Drain 3. Source. Fin (Drain) 9.3 TYP.. MAX. 3.6 TYP.. TYP..±.3 6.±..5 TYP..76±..5±..3 TYP..3 TYP..3±..3 TYP..Gate.Drain 3.Source.Fin (Drain).5±. 3) TO-5 (MP-3ZK) EQUIVALENT CIRCUIT 6.5±..3±. 5. TYP..5±..3 MIN. No Plating. TYP. Gate Drain Body Diode. MIN..8 3 6.±.. MAX. (9.8 TYP.) No Plating.5 MIN. Gate Protection Diode Source. MAX..3.3.76±. to.5.5±.. Gate. Drain 3. Source. Fin (Drain). Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. Data Sheet D86EJ3VDS 7
SK33B The information in this document is current as of June, 7. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may appear in this document. NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC Electronics products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others. Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of a customer's equipment shall be done under the full responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. While NEC Electronics endeavors to enhance the quality, reliability and safety of NEC Electronics products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC Electronics products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment and anti-failure features. NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to NEC Electronics products developed based on a customerdesignated "quality assurance program" for a specific application. The recommended applications of an NEC Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of each NEC Electronics product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots. "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support). "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to determine NEC Electronics' willingness to support a given application. (Note) () "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its majority-owned subsidiaries. () "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above). M8E. -