MBRS24LT3 Surface Mount Schottky Power Rectifier Power Surface Mount Package... employing the Schottky Barrier principle in a metal to silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies; free wheeling diodes and polarity protection diodes. Compact Package with J Bend Leads Ideal for Automated Handling Highly Stable Oxide Passivated Junction Guardring for Over Voltage Protection Low Forward Voltage Drop Pb Free Package May be Available. The G Suffix Denotes a Pb Free Lead Finish Mechanical Characteristics: Case: Molded Epoxy Epoxy Meets UL94, VO at 1/8 Weight: 95 mg (approximately) Maximum Temperature of 26 C / 1 Seconds for Soldering Cathode Polarity Band Available in 12 mm Tape, 25 Units per 13 inch Reel, Add T3 Suffix to Part Number Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Marking: BKJL MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (At Rated VR, TC = 13 C) Peak Repetitive Forward Current (At Rated VR, Square Wave, 2 khz, TC = 14 C) Non Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 6 Hz) Storage/Operating Case Temperature VRRM VRWM VR 4 V IO 2. A IFRM 4. A IFSM 7 A Tstg, TC 55 to +15 C SCHOTTKY BARRIER RECTIFIER 2. AMPERES 4 VOLTS CASE 43A PLASTIC ORDERING INFORMATION Device Package Shipping MBRS24LT3 25/Tape & Reel MBRS24LT3G MARKING DIAGRAM BKJL BKJL = Device Code (Pb Free) 25/Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD811/D. Operating Junction Temperature TJ 55 to +125 C Voltage Rate of Change (Rated VR, ) dv/dt 1, V/ s Semiconductor Components Industries, LLC, 23 December, 23 Rev. 3 1 Publication Order Number: MBRS24LT3/D
MBRS24LT3 THERMAL CHARACTERISTICS Characteristic Symbol Value Unit Thermal Resistance Junction to Lead (Note 1.) Thermal Resistance Junction to Ambient (Note 2.) ELECTRICAL CHARACTERISTICS Maximum Instantaneous Forward Voltage (Note 3.) (IF = 2. A) see Figure 2 (IF = 4. A) Maximum Instantaneous Reverse Current (Note 3.) (VR = 4 V) see Figure 4 (VR = 2 V) 1. Minimum pad size (.18 X.85 inch) for each lead on FR4 board. 2. 1 inch square pad size (1 x.5 inch for each lead) on FR4 board. 3. Pulse Test: Pulse Width 25 µs, Duty Cycle 2.%. RθJL RθJA 22.5 78 C/W VF Volts.43.5.34.45 IR TJ = 1 C ma.8.1 2 6. 2
I MBRS24LT3 i F, INSTANTANEOUS FORWARD CURRENT (AMPS), REVERSE CURRENT (AMPS) R I O, AVERAGE FORWARD CURRENT (AMPS) I 1 1 1..1 1E 3 1E 3 1.E 3 1E 6 1E 6 1.E 6 3.5 3. 2.5 2. 1.5 1..5 TJ = 1 C 1. TJ = 1 C TJ = 4 C.1.2.4.6.8.2.4.6.8 vf, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) VF, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE (VOLTS) Figure 1. Typical Forward Voltage 1 2 3 VR, REVERSE VOLTAGE (VOLTS) Figure 3. Typical Reverse Current dc SQUARE WAVE Ipk/Io = Ipk/Io = 5 Ipk/Io = 1 Ipk/Io = 2 TJ = 1 C 2 4 6 8 1 12 TL, LEAD TEMPERATURE ( C) 4 14 1 P FO, AVERAGE POWER DISSIPATION (WATTS) R, MAXIMUM REVERSE CURRENT (AMPS) I F, INSTANTANEOUS FORWARD CURRENT (AMPS) 1 1 1E 3 1E 3 1.E 3 1E 6 1E 6 1.E 6 1.2 1..8.6.4.2 Ipk/Io = 2 Figure 2. Maximum Forward Voltage TJ = 1 C 1 2 3 VR, REVERSE VOLTAGE (VOLTS) Figure 4. Maximum Reverse Current Ipk/Io = 1 Ipk/Io = 5 Ipk/Io = SQUARE WAVE.5 1. 1.5 2. 2.5 3. IO, AVERAGE FORWARD CURRENT (AMPS) dc 4 Figure 5. Current Derating Figure 6. Forward Power Dissipation 3
MBRS24LT3 C, CAPACITANCE (pf) 1 1 1, DERATED OPERATING TEMPERATURE ( C) 78 C/W 75 92 C/W 65 5. 1 15 2 25 3 35 4 5. 1 15 2 25 3 35 4 J T 125 Rtja = 22.5 C/W 115 15 95 42 C/W 85 61 C/W VR, REVERSE VOLTAGE (VOLTS) VR, DC REVERSE VOLTAGE (VOLTS) Figure 7. Capacitance Figure 8. Typical Operating Temperature Derating* (T), TRANSIENT THERMAL RESISTANCE (NORMALIZED) R (T), TRANSIENT THERMAL RESISTANCE (NORMALIZED) R 1..1.1.1.1 1..1.1 * Reverse power dissipation and the possibility of thermal runaway must be considered when operating this device under any reverse voltage conditions. Calculations of TJ therefore must include forward and reverse power effects. The allowable operating TJ may be calculated from the equation: TJ = TJmax r(t)(pf + Pr) where r(t) = thermal impedance under given conditions, Pf = forward power dissipation, and Pr = reverse power dissipation This graph displays the derated allowable TJ due to reverse bias under DC conditions only and is calculated as TJ = TJmax r(t)pr, where r(t) = Rthja. For other power applications further calculations must be performed. 5% 2% 1% 5.% 2.% 1.% 5% 2% 1% 5.% 2.% 1.% Rtjl(t) = Rtjl*r(t).1.1.1.1 1. 1 T, TIME (s) Figure 9. Thermal Response Junction to Lead Rtjl(t) = Rtjl*r(t).1.1.1.1.1.1 1. 1 1 1, T, TIME (s) Figure 1. Thermal Response Junction to Ambient 1 4
MBRS24LT3 PACKAGE DIMENSIONS PLASTIC PACKAGE CASE 43A 3 ISSUE D S A D B C NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. D DIMENSION SHALL BE MEASURED WITHIN DIMENSION P. INCHES MILLIMETERS DIM MIN MAX MIN MAX A.16.18 4.6 4.57 B.13.15 3.3 3.81 C.75.95 1.9 2.41 D.77.83 1.96 2.11 H.2.6.51.152 J.6.12.15.3 K.3.5.76 1.27 P.2 REF.51 REF S.25.22 5.21 5.59 K P J H SOLDERING FOOTPRINT* 2.261.89 2.743.18 2.159.85 SCALE 8:1 mm inches *For additional information on our Pb Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 5
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