PD-9797C RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-.5) Product Summary Part Number Radiation Level RDS(on) ID QPL Part Number IRHNJ67234 K Rads (Si).2Ω 2.4A JANSR2N7593U3 IRHNJ63234 3K Rads (Si).2Ω 2.4A JANSF2N7593U3 IRHNJ67234 JANSR2N7593U3 25V, N-CHANNEL REF: MIL-PRF-95/746 TECHNOLOGY International Rectifier s R6 TM technology provides superior power MOSFETs for space applications. These devices have improved immunity to Single Event Effect (SEE) and have been characterized for useful performance with Linear Energy Transfer (LET) up to 9MeV/(mg/cm 2 ). Their combination of very low RDS(on) and faster switching times reduces power loss and increases power density in today s high speed switching applications such as DC-DC converters and motor controllers. These devices retain all of the well established advantages of MOSFETs such as voltage control, ease of paralleling and temperature stability of electrical parameters. SMD-.5 Features: n Low RDS(on) n Fast Switching n Single Event Effect (SEE) Hardened n Low Total Gate Charge n Simple Drive Requirements n Ease of Paralleling n Hermetically Sealed n Surface Mount n Ceramic Package n Light Weight n ESD Rating: Class 2 per MIL-STD-75, Method 2 Absolute Maximum Ratings Parameter ID @ VGS = 2V, TC = 25 C Continuous Drain Current 2.4 ID @ VGS = 2V, TC = C Continuous Drain Current 7.8 IDM Pulsed Drain Current À 49.6 PD @ TC = 25 C Max. Power Dissipation 75 W Units Linear Derating Factor.6 W/ C VGS Gate-to-Source Voltage ±2 V EAS Single Pulse Avalanche Energy Á 56 mj IAR Avalanche Current À 2.4 A EAR Repetitive Avalanche Energy À 7.5 mj dv/dt Peak Diode Recovery dv/dt  5.5 V/ns TJ Operating Junction -55 to 5 TSTG Storage Temperature Range Pckg. Mounting Surface Temp. 3 (for 5s) C Weight. (Typical) g A For footnotes refer to the last page www.irf.com 4/8/4
Electrical Characteristics @ Tj = 25 C (Unless Otherwise Specified) Parameter Min Typ Max Units Test Conditions BVDSS Drain-to-Source Breakdown Voltage 25 V VGS = V, ID =.ma BVDSS/ TJ Temperature Coefficient of Breakdown.24 V/ C Reference to 25 C, ID =.ma Voltage RDS(on) Static Drain-to-Source On-State.2 Ω VGS = 2V, ID = 7.8A Ã Resistance VGS(th) Gate Threshold Voltage 2. 4. V VDS = VGS, ID =.ma VGS(th)/ TJ Gate Threshold Voltage Coefficient -9.6 mv/ C gfs Forward Transconductance 8.8 S VDS = 5V, IDS = 7.8A Ã IDSS Zero Gate Voltage Drain Current VDS= 2V,VGS=V 25 µa VDS = 2V, VGS = V, TJ = 25 C IGSS Gate-to-Source Leakage Forward na VGS = 2V IGSS Gate-to-Source Leakage Reverse - VGS = -2V Qg Total Gate Charge 5 VGS = 2V, ID = 2.4A Qgs Gate-to-Source Charge 5 nc VDS = 25V Qgd Gate-to-Drain ( Miller ) Charge 2 td(on) Turn-On Delay Time 25 VDD = 25V, ID = 2.4A, tr Rise Time 3 VGS = 2V, RG = 7.5Ω ns td(off) Turn-Off Delay Time 6 tf Fall Time 3 LS + LD Total Inductance 4. nh Measured from the center of drain pad to center of source pad Ciss Input Capacitance 445 VGS = V, VDS = 25V Coss Output Capacitance 87 pf f =.MHz Crss Reverse Transfer Capacitance 2.4 Rg Gate Resistance.2 Ω f =.MHz, open drain Source-Drain Diode Ratings and Characteristics Parameter Min Typ Max Units Test Conditions IS Continuous Source Current (Body Diode) 2.4 ISM Pulse Source Current (Body Diode) À 49.6 A VSD Diode Forward Voltage.2 V Tj = 25 C, IS = 2.4A, VGS = V Ã trr Reverse Recovery Time 35 ns Tj = 25 C, IF = 2.4, di/dt A/µs QRR Reverse Recovery Charge 5.5 µc VDD 5V Ã ton Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. * Current is limited by package Thermal Resistance Parameter Min Typ Max Units Test Conditions RthJC Junction-to-Case.67 C/W Note: Corresponding Spice and Saber models are available on International Rectifier Web site. For footnotes refer to the last page 2 www.irf.com
Radiation Characteristics International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. Table. Electrical Characteristics @ Tj = 25 C, Post Total Dose Irradiation ÄÅ Parameter Up to 3K Rads (Si) Units Test Conditions Min Max BV DSS Drain-to-Source Breakdown Voltage 25 V V GS = V, I D =.ma VGS(th) Gate Threshold Voltage 2. 4. VGS = V DS, I D =.ma I GSS Gate-to-Source Leakage Forward na V GS = 2V I GSS Gate-to-Source Leakage Reverse - V GS = -2V I DSS Zero Gate Voltage Drain Current µa V DS = 2V, V GS = V R DS(on) Static Drain-to-Source On-State Resistance (TO-3).2 Ω VGS = 2V, I D = 7.8A R DS(on) Static Drain-to-Source On-State Resistance (SMD-.5).2 Ω VGS = 2V, I D = 7.8A V SD Diode Forward Voltage.2 V VGS = V, I D = 2.4A. Part numbers IRHNJ67234 (JANSR2N7593U3) and IRHNJ63234 (JANSF2N7593U3) International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2. Table 2. Typical Single Event Effect Safe Operating Area LET Energy Range VDS (V) (MeV/(mg/cm 2 )) (MeV) (µm) @VGS= @VGS= @VGS= @VGS= @VGS= V -5V -V -5V -2V 44 ± 5% 35 ± 5% 25 ± % 25 25 25 25 4 6 ± 5% 825 ± 5% 66 ± 7.5% 25 25 25 5-9 ± 5% 47 ± 5% 8 ± 5% 75 75 - - - Bias VDS (V) 3 25 2 5 5-5 - Bias VGS (V) -5-2 LET=44 ± 5% LET=6 ± 5% LET=9 ± 5% For footnotes refer to the last page Fig a. Typical Single Event Effect, Safe Operating Area www.irf.com 3
I D, Drain-to-Source Current (A) R DS(on), Drain-to-Source On Resistance (Normalized) I D, Drain-to-Source Current (A) I D, Drain-to-Source Current (A) VGS TOP 5V 2V V 8.V 7.V 6.V 5.5V BOTTOM 5.V VGS TOP 5V 2V V 8.V 7.V 6.V 5.5V BOTTOM 5.V 5.V 5.V 6µs PULSE WIDTH Tj = 25 C.. V DS, Drain-to-Source Voltage (V) 6µs PULSE WIDTH Tj = 5 C.. V DS, Drain-to-Source Voltage (V) Fig. Typical Output Characteristics Fig 2. Typical Output Characteristics 2.5 I D = 2.4A T J = 5 C 2. T J = 25 C.5. V DS = 5V 6µs PULSE 5 WIDTH 5 5.5 6 6.5 7 7.5 8 8.5 9.5 V GS = 2V. -6-4 -2 2 4 6 8 2 4 6 V GS, Gate-to-Source Voltage (V) T J, Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature 4 www.irf.com
V (BR)DSS, Drain-to-Source Breakdown Voltage (V) V GS(th) Gate threshold Voltage (V) R DS(on), Drain-to -Source On Resistance ( Ω)..9.8 I D = 2.4A R DS (on), Drain-to -Source On Resistance ( Ω)..9.8 T J = 5 C.7.7.6 T J = 5 C.6.5.5 T J = 25 C.4.3 T J = 25 C.4.3.2.2. 4 8 2 6 2 24. V GS = 2V 2 3 4 5 6 V GS, Gate -to -Source Voltage (V) I D, Drain Current (A) Fig 5. Typical On-Resistance Vs Gate Voltage Fig 6. Typical On-Resistance Vs Drain Current 32 6. 3 I D =.ma 5.5 5. 3 4.5 29 4. 3.5 28 27 26 3. 2.5 2..5 I D = 5µA I D = 25µA I D =.ma I D = 5mA 25-6 -4-2 2 4 6 8 2 4 6 T J, Temperature ( C ). -6-4 -2 2 4 6 8 2 4 6 T J, Temperature ( C ) Fig 7. Typical Drain-to-Source Breakdown Voltage Vs Temperature Fig 8. Typical Threshold Voltage Vs Temperature www.irf.com 5
I D, Drain Current (A) C, Capacitance (pf) I SD, Reverse Drain Current (A) V GS, Gate-to-Source Voltage (V) 28 24 2 V GS = V, f = MHz KHz C iss = C gs + C gd, C ds SHORTED C rss = C gd C oss = C ds + C gd 2 6 I D = 2.4A V DS = 2V V DS = 25V V DS = 5V 6 C iss 2 2 C oss 8 8 4 C rss 4 FOR TEST CIRCUIT SEE FIGURE 3 8 6 24 32 4 48 V DS, Drain-to-Source Voltage (V) Q G, Total Gate Charge (nc) Fig 9. Typical Capacitance Vs. Drain-to-Source Voltage Fig. Typical Gate Charge Vs. Gate-to-Source Voltage 4 2 T J = 5 C T J = 25 C 8 6. 4 V GS = V..2.4.6.8..2 V SD, Source-to-Drain Voltage (V) 2 25 5 75 25 5 T C, Case Temperature ( C) Fig. Typical Source-Drain Diode Forward Voltage Fig 2. Maximum Drain Current Vs. Case Temperature 6 www.irf.com
I D, Drain-to-Source Current (A) E AS, Single Pulse Avalanche Energy (mj) OPERATION IN THIS AREA LIMITED BY R DS (on) 8 I D TOP 5.5A 7.8A BOTTOM 2.4A µs 6 ms 4. ms. Tc = 25 C Tj = 5 C Single Pulse DC V DS, Drain-to-Source Voltage (V) 2 25 5 75 25 5 Starting T J, Junction Temperature ( C) Fig 3. Maximum Safe Operating Area Fig 4. Maximum Avalanche Energy Vs. Drain Current D =.5.2 P DM...5.2. SINGLE PULSE ( THERMAL RESPONSE ) t t 2 Thermal Response ( Z thjc ) Notes:. Duty Factor D = t/t2 2. Peak Tj = P dm x Zthjc + Tc. E-5.... t, Rectangular Pulse Duration (sec) Fig 5. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 7
V (BR)DSS 5V tp VDS L DRIVER R G 2V V GS tp. D.U.T I AS.Ω. + - V DD A I AS Fig 6a. Unclamped Inductive Test Circuit Fig 6b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 2V Q G 2V.2µF 5KΩ.3µF Q GS Q GD D.U.T. + V - DS V G V GS 3mA Charge Fig 7a. Basic Gate Charge Waveform I G I D Current Sampling Resistors Fig 7b. Gate Charge Test Circuit V GS V DS R D V DS 9% R G D.U.T. + - V DD V GS Pulse Width µs Duty Factor. % % V GS t d(on) t r t d(off) t f Fig 8a. Switching Time Test Circuit Fig 8b. Switching Time Waveforms 8 www.irf.com
Footnotes: À Repetitive Rating; Pulse width limited by maximum junction temperature. Á VDD = 25V, starting TJ = 25 C, L =.73mH Peak IL = 2.4A, VGS = 2V Â ISD 2.4A, di/dt 66A/µs, VDD 25V, TJ 5 C Ã Pulse width 3 µs; Duty Cycle 2% Ä Total Dose Irradiation with VGS Bias. 2 volt VGS applied and VDS = during irradiation per MIL-STD-75, method 9, condition A. Å Total Dose Irradiation with VDS Bias. 2 volt VDS applied and VGS = during irradiation per MlL-STD-75, method 9, condition A. Case Outline and Dimensions SMD-.5 PAD ASSIGNMENTS = DRAIN 2 = GATE 3 = SOURCE IR WORLD HEADQUARTERS: N. Sepulveda Blvd., El Segundo, California 9245, USA Tel: (3) 252-75 IR LEOMINSTER : 25 Crawford St., Leominster, Massachusetts 453, USA Tel: (978) 534-5776 TAC Fax: (3) 252-793 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 4/24 www.irf.com 9