Low-Voltage Single SPDT Analog Switch DG9411 DESCRIPTION The DG9411 is a single-pole/double-throw monolithic CMOS analog switch designed for high performance switching of analog signals. Combining low power, high speed (t ON : 9 ns, t OFF : 5 ns), low on-resistance (r DS(on) : 7 Ω) and small physical size (SC7), the DG9411 is ideal for portable and battery powered applications requiring high performance and efficient use of board space. The DG9411 is built on s low voltage JI2 process. An epitaxial layer prevents latchup. Break-before - make is guaranteed for DG9411. Each switch conducts equally well in both directions when on, and blocks up to the power supply level when off. FEATURES Low voltage operation (2.25 V to 5.5 V) Low on-resistance - r DS(on) : 7 Ω Fast switching - t ON : 9 ns, t OFF : 5 ns Low charge injection - Q J : 5 pc Low power consumption TTL/CMOS compatible 6-Pin SC7 package BENEFITS Reduced power consumption Simple logic interface High accuracy Reduce board space APPLICATIONS Cellular phones Communication systems Portable test equipment Battery operated systems Sample and hold circuits Pb-free Available RoHS* PLIANT FUNCTIONAL BLOCK DIAGRAM AND P CONFIGURATION SC-7 1 6 2 5 GND 3 4 Top View Device Marking 4Dx or 4Dxy NO (Source 1 ) NC (Source 2 ) TRUTH TABLE Logic NC NO ON OFF 1 OFF ON Logic "".8 V Logic "1" 2.4 V ORDERG FORMATION Temp Range Package Part Number - 4 to 85 C SC7-6 DG9411DL-T1 DG9411DL-T1-E3 * Pb containing terminations are not RoHS compliant, exemptions may apply. 1
ABSOLUTE MAXIMUM RATGS Parameter Limit Unit Reference to GND -.3 to + 6,, NC, NO a -.3 to ( +.3) V Continuous Current (Any Terminal) ± 5 Peak Current (Pulsed at 1 ms, % duty cycle) ± 2 ma Storage Temperature - 65 to 15 C Power Dissipation (Packages) b 6-Pin SC7 c 25 mw Notes: a. Signals on NC, NO, or or exceeding will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to PC Board. c. Derate 3.1 mw/ C above 7 C. SPECIFICATIONS = 2.5 V Parameter Analog Switch Symbol Test Conditions Unless Otherwise Specified = 2.5 V, ± % V =.4 or 2. V e Temp a Limits - 4 to 85 C Min b Typ c Max b Unit Analog Signal Range d V NO, V NC V V Drain-Source On-Resistance r DS(on) = 2.25 V, V D = 1. V, I S = ma r DS(on) Flatness d Switch Off Leakage Current f r DS(on) Flatness I S(off) I D(off) 26 d 29 = 2.5 V = 2.75 V, V S =.5 V/1.5 V, V D = 1.5 V/.5 V Channel-On Leakage Current f I D(on) = 2.75 V, V S = V D =.5 V/1.5 V Digital Control - 25 d - 3. - 25 d - 3. - 25 d - 3. V = or, f = 1 MHz Input High Voltage V H 2 Input Low Voltage V L.4 V Input Capacitance d C in 3 pf Input Current I L or I H V = or - 1 1 µa Dynamic Characteristics Turn-On Time t 16 4 ON d 45 V D or V S = 1.5 V, R L = 3 Ω, C L = 35 pf ns Turn-Off Time t 7 23 OFF Figures 1 and 2 28 Break-Before-Make Time t d d 1 12 Charge Injection d C Q L = 1 nf, V GEN = V, V S = V, R GEN = Ω, J Figure 3 5 pc Off-Isolation d OIRR - 73 R L = 5 Ω, C L = 5 pf, f = 1 MHz Crosstalk d X TALK - 7 db Source-Off Capacitance d C S(off) 7 Channel-On Capacitance d C D(on) 2 pf Drain-to-Source Capacitance d C DS(off) 2 Power Supply Power Supply Range 2.25 2.75 V Power Supply Current d I+.1 1. µa V = or Power Consumption P C.3 µw 35 4 25 3. 25 3. 25 3. Ω 2
SPECIFICATIONS = 3 V Parameter Analog Switch Symbol Test Conditions Unless Otherwise Specified = 3 V, ± % V =.4 or 2. V e Temp a Limits - 4 to 85 C Min b Typ c Max b Unit Analog Signal Range d V NO, V NC V V Drain-Source On-Resistance d r DS(on) = 2.7 V, V D = 1.5 V, I S = ma r DS(on) Flatness d r DS(on) Flatness Switch Off Leakage Current f I S(off) I D(off) 15 19 V S = to, I S = ma 7.5 = 3.3 V, V S = 1 V/3 V, V D = 3 V/1 V Channel-On Leakage Current f I D(on) = 3.3 V, V S = V D = 1 V/3 V Digital Control Input High Voltage V H 2 Input Low Voltage V L.8 V Input Capacitance d C in 3 pf Input Current I L or I H V = or - 1 1 µa Dynamic Characteristics Turn-On Time d t 12 15 ON 2 V D or V S = 2. V, R L = 3 Ω, C L = 35 pf ns Turn-Off Time d t 6 8 OFF Figures1 and 2 Break-Before-Make Time d t d 1 7 Charge Injection d C Q L = 1 nf, V GEN = V, V S = V, R GEN = Ω, J Figure 3 5 pc Off-Isolation d OIRR - 73 R L = 5 Ω, C L = 5 pf, f = 1 MHz Crosstalk d X TALK - 7 db Source-Off Capacitance d C S(off) 7 Channel-On Capacitance d C D(on) V = or, f = 1 MHz 2 pf Drain-to-Source Capacitance d C DS(off) 2 Power Supply Power Supply Range 2.7 3.3 V Power Supply Current I+.1 1. µa V = or Power Consumption P C.4 µw - 5-4. - 5-4. - 5-4. 25 3 5 4. 5 4. 5 4. Ω 3
SPECIFICATIONS = 5 V Parameter Analog Switch Symbol Test Conditions Unless Otherwise Specified = 5 V, ± % V =.8 or 2.4 V e Temp a Limits - 4 to 85 C Min b Typ c Max b Unit Analog Signal Range d V NO, V NC V V Drain-Source On-Resistance r DS(on) = 4.5 V, V D = 3 V, I S = ma r DS(on) Flatness d Switch Off Leakage Current Channel-On Leakage Current Digital Control r DS(on) Flatness I S(off) I D(off) I D(on) Turn-Off Time d t 5 7 OFF Figure 1 and 2 9 ns Break-Before-Make Time d t d 1 4 Charge Injection d C Q L = 1 nf, V S = V, V GEN = V, R GEN = Ω, J Figure 3 5 pc Off-Isolation d OIRR - 73 R L = 5 Ω, C L = 5 pf, f = 1 MHz Crosstalk d X TALK - 7 db Source-Off Capacitance d C S(off) 7 Channel-On Capacitance d C D(on) V = or, f = 1 MHz 2 pf Drain-to-Source Capacitance d C DS(off) 2 Power Supply Power Supply Range 4.5 5.5 V Power Supply Current I+.1 1. µa V = or Power Consumption P C.6 µw Notes: a. = 25 C, = as determined by the operating suffix. b. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this datasheet. c. Typical values are for design aid only, not guaranteed nor subject to production testing. d. Guarantee by design, nor subjected to production test. e. V = input voltage to perform proper function. f. Guaranteed by 5 V leakage testing, not production tested. = 2.5 V 2 = 5.5 V, V S = 1 V/4.5 V, V D = 4.5 V/1 V = 5.5 V, V S = V D = 1 V/4.5 V Input High Voltage V H 2.4 V Input Low Voltage V L.8 Input Capacitance C in 3 pf Input Current I L or I H V = or - 1 1 µa Dynamic Characteristics Turn-On Time d t ON V D or V S = 3 V, R L = 3 Ω, C L = 35 pf - 1. - 4. - 1. - 4. - 1. - 3. 7 12 16 1. 4. 1. 4. 1. 4.5 9 11 15 Ω Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 4
TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 3 3 r DS(on) - 25 2 15 5 = 3 V = 2.5 V = 5 V r DS(on) - Drain-Source On-Resistance (Ω) 25 2 15 5 = 2.5 V = 5 V 4 C 85 C 25 C 4 C 25 C 85 C 1 2 3 4 5 1 2 3 4 5 V D - Analog Voltage (V) r DS(on) vs. Analog and Power Voltage V D - Analog Voltage (V) r DS(on) vs. Analog Voltage and Temperature = 5 V V = V ma 1 ma I+ - Supply Current () 1.1 I+ - Supply Current () µa µa 1 µa.1-6 - 4-2 2 4 6 8 12 14 1 1 1 K K K 1 M M Temperature ( C) Supply Current vs. Temperature Input Switching Frequency (Hz) Supply Current vs. Input Switching Frequency Leakage Current () K K 1 K = 5 V V D, V S = 5 V I D(off) I D(on) Leakage Current () - - 2-3 - 4 I D(off) = 5 V I D(on) I S(off) - 5 1-5 - 25 25 5 75 125 15 Temperature ( C) Leakage Current vs. Temperature - 6 1 2 3 4 5 6 V D, V S - Analog Voltage (V) Leakage vs. Analog Voltage 5
TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 25 t ON t ON, t OFF - Switching Time (ns) 2 15 5 t OFF 25 C 85 C 4 C 25 C 85 C - 4 C OIRR, X TALK (db) 8 6 4 2 = 3 V R L = 5 Ω Crosstalk Off Isolation 2. 2.5 3. 3.5 4. 4.5 5. 5.5 - Supply Voltage (V) Switching Time vs. Temperature and Supply Voltage K K 1 M M M Frequency (Hz) Crosstalk and Off Isolation vs. Frequency 3. 2.5-1 = 3 V R L = 5 Ω V T - Threshold Voltage (V) 2. 1.5 1. Insertion Loss (db) - 2-3 - 4.5-5. 1 2 3 4 5 6 7-6 1 K K K 1 M M M 1 G - Supply Voltage (V) Input Switching Threshold vs. Supply Voltage Frequency (Hz) Insertion Loss vs. Frequency 6 C L = 1 nf Charge Injection (pc) 4 2-2 = 2.5 V = 5 V = 3 V - 4-6 1 2 3 4 5 6 V D - Analog Voltage (V) Charge Injection vs. Analog Voltage 6
TEST CIRCUITS Switch Input Logic Input NO or NC GND Switch Output R L 3 Ω V OUT C L 35 pf Logic Input Switch Output + 3 V V V t ON 5 % t r < 2 ns t f < 2 ns.9 x V OUT t OFF C L (includes fixture and stray capacitance) R V OUT = V L R L + R ON Logic "1" = Switch On Logic input waveforms inverted for switches that have the opposite logic sense. Figure 1. Switching Time Logic Input 3 V t r < 5 ns t f < 5 ns V NO NO V O V V NC NC R L 3 Ω C L 35 pf V NC = V NO V O 9 % GND Switch Output V t D t D C L (includes fixture and stray capacitance) Figure 2. Break-Before-Make Interval V gen + R gen 3 V NC or NO GND V OUT C L = 1 nf V OUT On ΔV OUT Off On Q = ΔV OUT x C L Figure 3. Charge Injection depends on switch configuration: input polarity determined by sense of switch. 7
TEST CIRCUITS nf V, 2.4 V NC or NO R L GND V NC/NO Off Isolation = 2 log V Analyzer Figure 4. Off-Isolation nf V, 2.4 V NC or NO Meter HP4192A Impedance Analyzer or Equivalent GND f = 1 MHz Figure 5. Channel Off/On Capacitance maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http:///ppg?71347. 8
Package Information 6 5 4 1 2 3 e b e 1 D E 1 E -B- -A- A 2 A c L Dim Min Nom Max Min Nom Max A.9 1..35.43 A 1..4 A 2.8 1..31.39 b.15.3.6.12 c..25.4. D 1.8 2. 2.2.71.79.87 E 1.8 2. 2.4.71.83.94 E 1 1.15 1.25 1.35.45.49.53 e.65bsc.26bsc e 1 1.2 1.3 1.4.47.51.55 L..2.3.4.8.12 7 Nom 7 Nom A 1 ECN: S-3946 Rev. B, 9-Jul-1 DWG: 555 Document Number: 71154 6-Jul-1 1
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