TPC69 TOSHIBA Multi-Chip Transistor Silicon NPN & PNP Epitaxial Type TPC69 High-Speed Switching Applications MOS Gate Drive Applications Unit: mm NPN and PNP transistors are mounted on a compact and slim package. High DC current gain : NPN hfe = 4 to : PNP hfe = 2 to 5 Low collector-emitter saturation voltage : NPN VCE (sat) =.7 V (max) : PNP VCE (sat) =.23 V (max) High-speed switching: NPN tf = 85 ns (typ.) : PNP tf = 7 ns (typ.) Maximum Ratings () Characteristics Symbol NPN Rating PNP Unit Collector-base voltage V CBO 5 V Collector-emitter voltage V CEX 8 5 V Collector-emitter voltage V CEO 5 5 V Emitter-base voltage V EBO 7 7 V Collector current DC (Note ) I C..7 A Pulse (Note ) I CP 2. 2. A Base current I B.. A Collector power dissipation (t= s) (Note 2) P C () 5 mw JEDEC JEITA TOSHIBA 2-3TA Weight:. g (typ.) Collector power dissipation (DC) (Note 2) Thermal resistance, junction to ambient (t= s) (Note 2) Thermal resistance, junction to ambient (DC) (Note 2) value at dual value at dual P C (2) 4 P C (3) 33 mw R th (j-a) () 25 C/W R th (j-a) (2) 32 R th (j-a) (3) 378 Junction temperature T j 5 C Storage temperature range T stg 55 to 5 C Note : Ensure that the channel temperature does not exceed 5 C. C/W Note 2:Mounted on an FR4 board (glass epoxy,.6 mm thick, Cu area: 645 mm 2 ) 24--2
TPC69 Circuit Configuration Marking 6 5 4 Lot code (month) Lot No. Part No. (or abbreviation code) H6A Product-specific code 2 3 Pin # Lot code (year) A line indicates lead (Pb)-free package or lead (Pb)-free finish. Electrical Characteristics () : NPN Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current I CBO V CB = V, I E = na Emitter cut-off current I EBO V EB = 7 V, I C = na Collector-emitter breakdown voltage V (BR) CEO I C = ma, I B = 5 V DC current gain h FE () V CE = 2 V, I C =. A 4 h FE (2) V CE = 2 V, I C =.3 A 2 Collector-emitter saturation voltage V CE (sat) I C = 3 ma, I B = 6 ma.7 V Base-emitter saturation voltage V BE (sat) I C = 3 ma, I B = 6 ma. V Collector output capacitance C ob V CB = V, I E =, f = MHz 5 pf Rise time t r See Figure circuit diagram. 35 Switching time Storage time t stg V CC 3 V, R L = Ω 68 ns Fall time t f I B = I B2 = ma 85 Electrical Characteristics () : PNP Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current I CBO V CB = 5 V, I E = na Emitter cut-off current I EBO V EB = 7 V, I C = na Collector-emitter breakdown voltage V (BR) CEO I C = ma, I B = 5 V DC current gain h FE () V CE = 2 V, I C =. A 2 5 h FE (2) V CE = 2 V, I C =.3 A 25 Collector-emitter saturation voltage V CE (sat) I C = 3 ma, I B = ma.23 V Base-emitter saturation voltage V BE (sat) I C = 3 ma, I B = ma. V Collector output capacitance C ob V CB = V, I E =, f = MHz 8 pf Rise time t r See Figure 2 circuit diagram. 6 Switching time Storage time t stg V CC 3 V, R L = Ω 28 ns Fall time t f I B = I B2 = ma 7 2 24--2
TPC69 V CC V CC I B 2 µs I B Input RL Output I B I B2 I B2 Input RL Output I B2 Duty cycle < % I B2 2 µs Duty cycle < % I B Figure Switching Time Test Circuit & Timing Chart (NPN) Figure 2 Switching Time Test Circuit & Timing Chart (PNP) 3 24--2
TPC69 NPN. I C V CE 2 5 h FE I C.8.6.4.2.2.4.6.8..2 Collector emitter voltage V CE 8 6 4 2 IB = ma (V) DC current gain hfe Ta = C V CE = 2 V... Collector current I C (A) Collector emitter saturation voltage VCE (sat) (V) V CE (sat) I C β = 5... Ta = C.. Base-emitter saturation voltage VBE (sat) (V) V BE (sat) I C β = 5.. Ta = C.. Collector current I C (A) Collector current I C (A) Safe Operation Area. V CE = 2 V.8.6.4.2 I C V BE Ta = C.2.4.6.8..2 Base emitter saturation voltage V BE (V). IC max (Pulsed)* IC max (Continuous)* ms* s* DC ms* ms* µs* *: Note that the curves for ms, s and DC will be different when the devices aren t. mounted on an FR4 board (glass epoxy,.6 mm thick, Cu area: 645 mm 2 ). These characteristic curves must be derated linearly with increase VCEO max in temperature... Collector-emitter voltage V CE (V) µs* 4 24--2
TPC69 PNP..8.6.4.2 I C V CE 5 4 3 2 5 5 2 IB = ma.2.4.6.8..2 Collector emitter voltage V CE (V) DC current gain hfe. VCE = 2 V h FE I C Ta = C.. Collector current I C (A) Collector emitter saturation voltage VCE (sat) (V).... β = 3 V CE (sat) I C Ta = C.. Base emitter saturation voltage VBE (sat) (V).. β = 3 V BE (sat) I C Ta = C.. Collector current I C (A) Collector current I C (A) Safe area I C V BE IC max (Pulse)* ms* ms* µs* µs*..8.6.4.2 VCE = 2 V Ta = C.2.4.6.8..2. IC max (Continuous)* DC s* ms* *: Note that the curves for ms, s and DC will be different when the devices aren t. mounted on an FR4 board (glass epoxy,.6 mm thick, Cu area: 645 mm 2 ). These characteristic curves must VCEO max be derated linearly with increase in temperature... Base emitter saturation voltage V BE (V) Collector emitter voltage V CE (V) 5 24--2
TPC69 Common r th t w Transient thermal resistance rth(j-a) ( C/W) Curves should be applied in thermal limited area. Mounted on an FR4 board (glass epoxy,.6 mm thick, Cu area: 645 mm 2 ) Si l d i ti... Pulse width t w (s) Permissible power dissipation for Q2 PC (W).5.4.3.2. Permissible Power Dissipation for Simultaneous Operation DC Mounted on an FR4 board glass epoxy,.6 mm thick, Cu area: 645 mm 2 )..2.3.4.5 Permissible power dissipation for Q P C (W) Collector power dissipation at the single-device is.4w. Collector power dissipation at the single-device value at dual is.33w. Collector power dissipation at the dual is set to.66w. 6 24--2
TPC69 RESTRICTIONS ON PRODUCT USE The information contained herein is subject to change without notice. 369EAA The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the Handling Guide for Semiconductor Devices, or TOSHIBA Semiconductor Reliability Handbook etc.. The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ( Unintended Usage ). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer s own risk. TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 7 24--2
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